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1.
采用磁控溅射法在Pt/Ti/SiO2/Si衬底上制备了(Ba,Sr)TiO3薄膜。基于薄膜的形核理论,研究了溅射气压、靶基距、衬底温度和溅射功率等溅射参数对(Ba,Sr)TiO3薄膜择优取向生长的影响。实验结果表明:磁控溅射中,较高衬底温度(600℃)有助于钙钛矿成相;通过改变磁控溅射参数,能得到(111)、(001)、(110)择优取向的薄膜。  相似文献   

2.
应用磁控溅射法在 Pt/Ti/SiO2/Si(001)衬底上制备 5 mm 厚超薄非晶 Ti-Al 薄膜作为过渡层,利用脉冲激光沉积法制备 Ba0.6 Sr0.4TiO3 薄膜,构造了 Pt/Ba0.6Sr0.4TiO3/Pt(Pt/BST/Pt)和 Pt/Ti-Al/Ba0.6Sr0.4TiO3/Ti-Al/Pt(Pt/Ti-Al/BST/Ti-Al/Pt)结构的电容器,研究了 Ti-Al 过渡层对 Pt/BST/Pt 电容器结构及其性能的影响.实验表明,过渡层的引入有效地阻止了 Pt 电极和 BST 薄膜的互扩散,降低了 BST 薄膜氧空位的浓度,提高了铁电电容器的介电性能.当测试频率为 1 kHz、直流偏压为0 V时,介电常数由引入过渡层前的 530 增大到引入后的 601,介电损耗则由0.09减小到0.03.而且过渡层的引入有效地降低了 BST 薄膜的漏电流,使正负向漏电流趋于对称,在测试电压为5 V 时,漏电流密度由3.8×10-5 A/cm2 减小到 8.25 ×10-6 A/cm2.  相似文献   

3.
采用溶胶-凝胶法在SiO2/Si(100)衬底上制备了镍酸镧(LaNiO3,LNO)薄膜,并利用XRD、SEM、AFM和半导体参数分析仪等研究了退火升温速率对LNO薄膜结构和电学性能的影响.结果表明,溶胶-凝胶法制备的LNO薄膜呈现赝立方钙钛矿型多晶结构,呈(110)择优取向生长;薄膜表面平整、均匀、无裂纹.随着退火升温速率的增加,LNO薄膜的晶粒尺寸先增大后减小;其电阻率先减小后增大.在退火升温速率为20℃/min时,LNO薄膜晶粒尺寸达到最大值94 nm,电阻率达到最小值9.5 x10-4 Ω·m.  相似文献   

4.
运用溶胶-凝胶法在Si/SiO2/Ti/Pt基底上制备了掺杂不同量的Y3+的单层Ba0.65Sr0.35TiO3 (BST)薄膜和并联结构的BST/ZrO2复合薄膜.研究发现:当BST溶胶中掺入了适量的Y3+后,制备的单层BST的表面形貌得到改善,介电性能提高;掺杂的Y3+为1mol;时单层BST薄膜介电性能最佳,介电常数为400.53;介电损耗为0.0125.BST/ZrO2复合薄膜的电容值相对于单层BST薄膜得到明显提高,当烧结温度为750℃时,BST/ZrO2复合薄膜综合介电性能最佳,介电常数790.12;介电损耗达到0.051.  相似文献   

5.
利用溶胶-凝胶法分别在Pt/TiO2/SiO2/Si和ITO/玻璃衬底上制备纯相的铁酸铋(BiFeO3)和La掺杂的铁酸铋(Bi1-xLaxFeO3,x=0.05,0.1)薄膜.XRD测试表明BLFO薄膜为纯钙钛矿相,都呈(111)方向的菱形结构,La掺杂可以提高BFO薄膜的结构稳定性.镧掺杂铁酸铋具有更大的剩余极化值和较小的漏电流.此外,随着La成分的增加,薄膜的基本吸收边呈现红移,并通过Tauc公式计算拟合观察到BLFO的光学带隙逐渐减小.结果发现随着La掺杂量(0,5mol;,10mol;)逐渐增大,薄膜的剩余极化值越大,其禁带宽度(Eg)越小.  相似文献   

6.
利用脉冲激光沉积技术在Pt(111)/TiO2/SiO2/Si(001)衬底上生长了厚度约为200 nm的Ba0.6 Sr04TiO3(BST)薄膜,构架了Pt/BST/Pt平行板电容器,测量了Ba06Sr0.4TiO3薄膜电容器在不同温度下的漏电流,研究了BST薄膜的结构和性能.结果表明BST薄膜为多晶钙钛矿结构,随着测量温度的降低,漏电流密度也随之降低,但是正负偏压下的J-V曲线并不对称,这主要归因于上下Pt电极与BST的界面热处理不同.通过不同导电机理对漏电流密度拟合发现,在负向偏置电压下,Pt/BST/Pt电容器均基本符合欧姆导电机制;而对于正向偏置电压,在低电压下符合欧姆导电机制,并且符合欧姆导电机制的电压范围在不断扩大,在高电压下符合空间限制电流(SCLC)导电机制.  相似文献   

7.
本文采用溶胶-凝胶法在Pt(111)/TiO2/SiO2/Si衬底上制备了(Ba0.6Sr0.4)1-xCaxTiO3(BSCT)(x=0,0.1,0.2,0.3,0.4)薄膜.XRD及SEM结果表明表明,薄膜结晶良好,形成单一的钙钛矿结构,没有明显的裂缝.薄膜厚度大约为500nm.从介电常数和直流偏压电场的关系曲线上并没有滞后现象,这说明BSCT薄膜处于顺电相.随着x的增加,薄膜的介电常数、介电损耗和调谐率都有所下降,而优值有所提高.J-V特性表明Ca的加入显著降低了薄膜的漏电流.  相似文献   

8.
本文以Si(100)为衬底,利用水平式常压冷壁化学气相沉积(APCVD)系统在不同温度(1100~1250℃)下制备的“缓冲层”上生长了3C-SiC薄膜.结果表明,薄膜为外延生长的单一3C-SiC多型,薄膜表面呈现“镶嵌”结构特征,Si/3C-SiC界面平整无孔洞.碳化温度对薄膜的结晶质量和表面粗糙度有显著的影响,当碳化温度低于或高于1200℃时,薄膜的结晶质量有所降低,且随着碳化温度的升高,薄膜表面粗糙度呈现增大的趋势.当在1200℃下制备的“缓冲层”上生长薄膜时,可以获得最优质量的3C-SiC外延膜,其(200)晶面摇摆曲线半峰宽约为0.34°,表面粗糙度约为5.2nm.  相似文献   

9.
应用磁控溅射法在以SrRuO3 (SRO)薄膜为缓冲层的Pt/TiO2/SiO2/Si(001)基片上制备了多晶BiFeO3 (BFO)薄膜,构架了SRO/BFO/SRO异质结电容器.采用X射线衍射、铁电测试仪等研究沉积温度对BFO薄膜结构和性能的影响.X射线衍射图谱显示BFO薄膜为多晶结构.在2.5 kHz测试频率下,500℃生长的BFO薄膜呈现比较饱和的电滞回线,2Pr为145μC/cm2,矫顽场Ec为158 kV/cm,漏电流密度约为2.4×104 A/cm2.漏电机制研究表明,在低电场区,SRO/BFO/SRO电容器满足欧姆导电机制,在高电场区,满足普尔-弗兰克导电机理.实验发现:SRO/BFO/SRO电容器经过109翻转后仍具有良好的抗疲劳特性.  相似文献   

10.
本文采用偏轴磁控溅射方法在Pt/TiO2/SiO2/Si(111)基片上制备了多晶BiFeO3(BFO)薄膜,并构架了Pt/BFO/Pt异质结电容器。利用X射线衍射(XRD)、铁电测试仪等手段研究了保持温度对BFO薄膜结构和性能的影响。XRD图谱表明制备的BFO薄膜均为多晶结构,在保持温度400℃±2℃的区间内得到的BFO薄膜不含明显杂相,其它的温度均有明显的杂相。在保持温度为400℃时得到了较为饱和的电滞回线,在900 nm厚度的情况下,剩余极化强度仍可以达到Pr>40μC/cm2,达到了实际应用的要求Pr>10μC/cm2。漏电流拟合机制表明在低场下属于欧姆机制,在高场下比较接近空间电荷限制电流(SCLC)机制。  相似文献   

11.
采用固相合成法制备了(1-x)(Na1/2Bi1/2)TiO3-x(Na1/2Bi1/2)(Zn/23Nb2/3)O3(简写为(1-x)NBT-xNBZN)无铅压电陶瓷.研究了该体系陶瓷晶体结构、弥散相变特征与介电弛豫行为.X射线衍射分析表明,所研究的组成均能够形成纯钙钛矿(ABO3)型固溶体.当x≥0.5%摩尔分数时,该体系陶瓷具有三方、四方共存的晶体结构.材料的介电常数-温度曲线显示陶瓷具有两个介电反常峰Tf和Tm.修正的居里-外斯公式较好的描述了陶瓷弥散相变特征,弥散指数随x的增加而增加.x≤0.5%摩尔分数的陶瓷仅在低温介电反常峰Tf附近表现出明显的频率依赖性,随x的增加,陶瓷材料在室温和低温介电反常峰Tf之间都表现出明显的频率依赖性.根据有序-无序转变和宏畴.微畴转变理论探讨了该体系陶瓷介电弛豫特性的机理.  相似文献   

12.
采用两步法制备了0.30Pb(In1/2 Nb1/2)O3-(0.70-x)Pb(Ni1/3Nb2/3)O3-xPbTiO3(PIN-PNN-PT,x=0.33,0.35,0.37,0.39)压电陶瓷.研究了PIN-PNN-PT压电陶瓷的相结构、介电、铁电和压电性能.研究表明位于准同型相界(MPB)的组分0.30PIN-0.33PNN-0.37PT具有最佳电学性能,其居里温度TC、压电系数d33、平面机电耦合系数kp、自由介电常数ε二介电损耗tanδ、剩余极化Pr、矫顽场EC分别为200℃、386 pC/N、50;、2692、0.045、34 μC/cm2、18 kV/cm.结果 显示PIN-PNN-PT三元系相比于PNN-PT有更高的居里温度,同时保持了优异的压电性能.  相似文献   

13.
Glasses in the system Na2O/B2O3/Al2O3/In2O3 were melted and subsequently tempered in the range from 500 to 700 °C. Depending on the chemical composition, various crystalline phases were observed. From samples without Al2O3, In2O3 could not be crystallized from homogeneous glasses, because either spontaneous In2O3 crystallization occurred during cooling, or other phases such as NaInO2 were formed during tempering. The addition of alumina, however, controlled the crystallization of In2O3. Depending on the crystallization temperature applied, the crystallite sizes were in the range from 13 to 53 nm. The glass matrix can be dissolved by soaking the powdered glass in water. This procedure can be used to prepare nano-crystalline In2O3-powders.  相似文献   

14.
Tomoharu Hasegawa 《Journal of Non》2011,357(15):2857-4499
Glasses of the Bi2O3-TeO2-B2O3 ternary system were developed and their linear and nonlinear optical properties were investigated. The absorption edges of these glasses were found to be 367-384 nm with a good transmittance in visible wavelength, although they exhibit the refractive indices as high as 1.98-2.12 at 633 nm. The absorption edges are quite steep and they are analyzed by the Urbach theory. The obtained Urbach energies of these glasses are 73-79 meV which are comparable to silica glasses. The high refractive index and its glass composition dependency are discussed according to the basics of the electronic polarizability and optical basicity. The high third order nonlinear susceptibility χ(3) = 2.0 × 10− 12 esu at 800 nm was also obtained in the 36Bi2O3-18TeO2-46B2O3 glass.  相似文献   

15.
Q. Qian  G.F. Yang  Z.M. Yang  Z.H. Jiang 《Journal of Non》2008,354(18):1981-1985
Spectroscopic properties of Er3+-doped Na2O-Sb2O3-B2O3-SiO2 glasses have been investigated for developing 1.5-μm broadband fiber amplifiers. An intense 1.5-μm near infrared emission with a broad full width at half maximum (FWHM) of 88 nm has been obtained for Er3+-doped 5Na2O-20Sb2O3-35B2O3-40SiO2 glass upon excitation with a 980 nm laser diode. The obtained emission cross-section of the 4I13/2 → 4I15/2 transition and the lifetime of the 4I13/2 level of Er3+ ions are 6.8 × 10−21 cm2 and 0.36 ms, respectively. It is noted that the product of the emission cross-section and the FWHM of the glass, σe × FWHM, is as great as 598.4 × 10−21 cm2 nm, which is comparable or higher than that of Er3+-doped bismuth-based and tellurite-based glasses. These special optical properties encourage in identifying them as important materials for potential applications in high performance optics and optical communication networks.  相似文献   

16.
采用高温溶液法生长了准同型相界(MPB)四元弛豫铁电单晶Pb(Sc1/2Nb1/2) O3-Pb(Mg1/3 Nb2/3)O3-PbTiO3-PbZrO3,得到较大尺寸且具有规则外形的立方单晶.研究结果表明所生长的晶体为钙钛矿结构,立方晶粒平整的暴露面均为(001)面;晶体以层状方式生长,生长机制为搭桥生长;所生长晶体的矫顽场Ec~3.52kV/cm,三方四方相变温度Tr-t~104℃,居里温度Tc~149.5℃,压电常数d33~1089 pC/N,剩余极化强度Pr~25.4 μC/cm2;随着频率增加,晶体的相变弥散度减小.  相似文献   

17.
Er2O3-doped Bi2O3-B2O3-Ga2O3 glasses were prepared by the conventional melt-quenching method, and the Er3+:4I13/2 → 4I15/2 fluorescence properties are studied for different Er3+ concentrations. when the Er2O3 concentration increases from 0.03 to 3.0 mol%, the measured lifetime of Er3+:4I13/2 level decrease from 2.24 to 0.9 m s, and from 0.25 to 0.20 m s for the Er3+:4I11/2 level. The fast energy migration among Er3+ ions cause the reduction of lifetime of the 4I13/2 level, whereas the change in the 4I11/2 level is mainly due to a cooperative upconversion process (4I11/24I11/2) → (4F7/24I15/2). Based on the dipole-dipole interaction theory, the interaction parameter, CEr,Er, for the migration rate of Er3+:4I13/2 ↔ 4I13/2 was calculated to be 32 × 10−40 cm6 s−1.  相似文献   

18.
Reduction in the temperature coefficient of the optical path length, dS/dT of Li2O-Al2O3-SiO2 glass-ceramics with near-zero thermal expansion coefficient was attempted using control of the temperature coefficient of electronic polarizability, ?, and the thermal expansion coefficient, α. The dS/dT value of 2.6 mol% B2O3-doped glass-ceramic was 12.5  × 10−6/°C, which was 0.9 ×  10−6/°C smaller than that of B2O3-free glass-ceramic. On the other hand, reduction in dS/dT through B2O3 doping was not confirmed in precursor glasses. Results showed that reduction in dS/dT of the glass-ceramic through B2O3 doping is caused by the reduction in ?. The reduction in ? from B2O3 doping was probably attributable to numerical reduction in non-bridging oxide ions with larger ? value by the concentration of boron ions in the residual glass phase. In addition, application of hydrostatic pressure during crystallization was effective to inhibit precipitation of β-spodumene solid solution, which thereby decreases dS/dT. The dS/dT value of B2O3-doped glass-ceramic crystallized under 196 MPa was 11.7 ×  10−6/°C. That value was slightly larger than that of silica glass. The α value of this glass-ceramic was smaller than that of silica glass.  相似文献   

19.
The effect of alumina on the phase separation and the crystallization of the glasses of composition (mol%) 18ZnO·30B2O3·52SiO2 and O-40 Al2O3 was studied using an electron microscope and IR spectroscopy. The main crystalline phase appears in the microphase for which the compositions are not nearer to the crystal stoichiometry than the mean. The addition of Al2O3 suppresses the immiscibility but enhances the crystallizability.  相似文献   

20.
Glasses in the Al2O3-SiO2 and Nd2O3-Al2O3-SiO2 systems were prepared by the sol-gel method. The gel-glass evolution was studied using near-infrared (NIR) and ultraviolet-visible (UV-VIS) spectrophotometry, X-ray diffraction (XRD), scanning electron microscopy (SEM), Fourier infrared spectroscopy (FTIR) and nuclear magnetic resonance spectroscopy (NMR). The results obtained indicate a relationship between the sample compositions, the treatment temperature and the Al coordination. In the samples of the Nd2O3-Al2O3-SiO2 system the densification of the structure, when the treatment temperature increases, leads to the segregation of neodymium oxide particles.  相似文献   

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