Ferroelectric relaxor behaviour in Pb(Fe0.5Ta0.5)O3

The relaxor ferroelectric lead iron tantalate, Pb(Fe_0.5Ta_0.5)O₃ (PFT) is synthesized by Coulombite precursor method. The X-ray diffraction pattern of the sample at room temperature shows a cubic phase. The field dependence of dielectric response is measured in a frequency range 0.1 kHz — 1 MHz and in a temperature range from 173–373 K. The temperature dependence of permittivity (ɛ′) shows broad maxima at various frequencies. The frequency dependence of the permittivity maximum temperature (T _m ) has been modelled using Vogel-Fulcher relation.      

Preparation, structural analysis and dielectric properties of Bi x La1−x FeO3 perovskite

Rare earth element substituted bismuth ferrites (BiFeO₃) are of enormous importance as magnetoelectric materials. The polycrystalline samples of Bi _x La_1−x FeO₃ (x=0, 0.2, 0.4, 0.6, 0.8) were prepared by solid-state reaction using standard ceramic method. The single-phase formation of these compounds was confirmed by X-ray diffraction (XRD) studies. The samples with x=0, 0.2, 0.4, 0.6 are found to be orthorhombic while the sample with x=0.8 is triclinic. The dielectric constant (ε′) and dissipation factor (tan δ) were measured in the frequency range 100 Hz to 1 MHz at room temperature and as a function of temperature at certain fixed frequencies (1 kHz, 10 kHz, 100 kHz, 1 MHz). All the samples showed dielectric dispersion. The dielectric constant with temperature shows a broad peak; the peak temperature shifts with frequency which reflects the relaxor-type behavior. The peak above 600 K in the measured temperature range corresponds to antiferromagnetic ordering temperature (Néel temperature). The broadness of the peak changes with composition. The ac conductivity as well as ε′ are found to be maximum for the sample x=0.2 at room temperature.     

Dielectric properties of CdS nanoparticles synthesized by soft chemical route

CdS nanoparticles have been synthesized by a chemical reaction route using thiophenol as a capping agent. The frequency-dependent dielectric dispersion of cadmium sulphide (CdS) is investigated in the temperature range of 303-413 K and in a frequency range of 50 Hz-1 MHz by impedance spectroscopy. An analysis of the complex permittivity (ɛ′ and ɛ″) and loss tangent (tan δ) with frequency is performed by assuming a distribution of relaxation times. The scaling behaviour of dielectric loss spectra suggests that the relaxation describes the same mechanism at various temperatures. The frequency-dependent electrical data are analysed in the framework of conductivity and modulus formalisms. The frequency-dependent conductivity spectra obey the power law.     

Electric and dielectric properties of solution-gas interface grown amorphous AgCl films

Electric and dielectric properties of solution-gas interface grown AgCl thin film capacitors (Al/AgCl/Al) of various thicknesses have been studied in the frequency range 10¹–10⁶ Hz at various temperatures (303–393 K). I–V characteristics show ohmic, space-charge-limited, and thermionic emission conduction mechanisms to operate at low, intermediate and high voltages respectively. Capacitance decreases with increasing film thickness and applied frequency while it increases with increase of temperature. Loss factor (tanδ), which shows a pronounced minimum with frequency, increases with the rise of temperature and (tanδ)_min shifts to a higher frequency. The large values of capacitance and dielectric constant (ɛ) in the low frequency region indicate the possibility of an interfacial polarization mechanism to operate in this region while electronic and ionic polarizations dominate in the high frequency region.     

Space-charge relaxation and electrical conduction in?K0.5Na0.5NbO3 at high temperatures

Sodium potassium niobate K_0.5Na_0.5NbO₃(KNN) ceramic was synthesized by a solid-state technique. The X-ray diffraction of the sample at room temperature showed a monoclinic phase. The real part (ε′) and imaginary part (ε″) of dielectric permittivity of the sample were measured in a frequency range from 40 Hz to 1 MHz and in a temperature range from 350 to 850 K. The ε′ deviated from Curie–Weiss law above 702 K, due to additional dielectric contributions resulting from universal dielectric response and thermally activated space charges at high temperatures. This anomaly arose from a Debye dielectric dispersion that slowed down following an Arrhenius law. We have established a link between the dielectric relaxation and the conductivity.     

Microwave specific loss power of magnetic fluids subjected to a static magnetic field

This paper reports on the frequency dependence of the magnetic and electric power dissipation in a magnetic fluid sample, in the microwave frequency range (0.5 to 8GHz), at various values of the static magnetic field (0 to 167.8kA/m). The computation of the power dissipation relies on the experimental values measured for the complex dielectric permittivity, ɛ = ɛ′ - iɛ″, and the complex magnetic permeability, μ = μ′ - iμ″, over the same frequency range. The results show that the magnetic power dissipation is much larger than the electric one for the investigated sample. At a specific frequency, f (Hz) , the power dissipation, p, depends on the external magnetic field, and exhibits a maximum. The result obtained suggests the possibility of controlling the energy absorption in the microwave range by means of the application of an external magnetic field.     

CaCu3Ti4O12陶瓷的微观结构及直流导电特性

采用传统固相反应法制备了CaCu₃Ti₄O₁₂陶瓷.XRD证实其CaCu₃Ti₄O₁₂相;SEM观察到明显的晶粒晶界结构,晶界区亦由小晶粒构成;结合EDS结果,判定晶界区小晶粒为CuO.在较宽的温度范围内,CaCu₃Ti₄O₁₂陶瓷的介电常数保持在10⁵左右;当频率为10³ Hz温度小于150 K时,介电常数迅速下降.在173—373 K温度范围内,通过其I-V特性,得到CaCu₃Ti₄O₁₂陶瓷直流电导随温度的变化：直流电导与温度的关系可分为三部分,对应的活化能分别为0.681 eV,0.155 eV和0.009 eV,这与CuO陶瓷直流电导活化能一致.可以认为晶界区的CuO小晶粒在CaCu₃Ti₄O₁₂陶瓷的直流电导中占主导,这为解释CaCu₃Ti₄O₁₂陶瓷反常的介电性能提供了新的思路. 关键词： 3Ti₄O₁₂')" href="#">CaCu₃Ti₄O₁₂ 微观结构 直流电导 介电特性     

Frequency dependence of the complex dielectric constant of poly(ethylene oxide) under hydrostatic pressure

Summary Electrical-impedance measurements have been made in the frequency range 5 Hz to10 MHz in pure poly(ethylene oxide) having a molecular weight of 600 000 from 254 K nearly up to the melting point of the crystalline phase (about 330 K). As the temperature approaches the melting point there are large increases in the realε′ and imaginaryε″ parts of the dielectric constant. The frequency dependence ofε′ is characterized by a primary-relaxation process, whose frequency increases with increasing temperature as a consequence of decrease of the average structural relaxation time. There is strong evidence that this low-frequency dispersion rises mainly from the diffusive transport of localised charge carriers rather than a purely orientation relaxation process. In addition the effects of hydrostatic pressure (0–25 Gpa) on the frequency dependences of the realε′ and imaginaryε″ parts of the dielectric constant have been measured in the same temperature range. Paper presented at the I International Conference on Scaling Concepts and Complex Fluids, Copanello, Italy, July 4–8, 1994.     

巨介电常数氧化物CaCu3Ti4O12的介电和阻抗特性

采用固相烧结法合成了单相巨介电常数氧化物CaCu₃Ti₄O₁₂（CCTO）.用阻抗分析仪分析了10—420 K温度范围内的介电频谱和阻抗谱特性,并结合ZVIEW软件进行了模拟.结果表明：温度高于室温时,频谱出现两个明显的弛豫台阶,低频弛豫介电常数随温度升高而显著增大,表现出热离子极化特点;温度低于室温时,频谱表现出类德拜弛豫,且高、低平台介电常数值基本不随温度变化,表现出界面极化特点和较好的温度稳定性.频谱中依次出现的介电弛豫对应于阻抗谱中 关键词： 3Ti₄O₁₂')" href="#">CaCu₃Ti₄O₁₂ 介电频谱 阻抗谱 Cole-Cole半圆弧     

Synthesis, structure, and dielectric properties of KH2PO4 fractal aggregates

Macroscopic fractal aggregates of KH₂PH₄ (KDP) measuring up to 500 μm have been obtained. The fractal structure forms as a result of the precipitation of KDP particles from a supersaturated aqueous solution in the presence of a temperature gradient followed by a diffusioncontrolled mechanism of aggregation. The electron-microscopic analysis performed has shown that the fractals are formed predominantly from crystallites of the tetragonal modification measuring ∼1 μm. The dielectric constant (ɛ) of fractal KH₂PO₄ has been measured in the temperature range 80–300 K. A characteristic anomaly has been discovered on the ɛ(T) curve in the vicinity of 122 K, which attests to a ferroelectric phase transition. The absolute value of ɛ is significantly smaller than the components ɛ ₁₁ and ɛ ₃₃ for KH₂PO₄. Fiz. Tverd. Tela (St. Petersburg) 41, 2059–2061 (November 1999)     

Impedance spectroscopy studies of poly (methyl methacrylate)-lithium salts polymer electrolyte systems

In the present work, five systems of samples have been prepared by the solution casting technique. These are the plasticized poly(methyl methacrylate) (PMMA-EC) system, the LiCF₃SO₃ salted-poly(methyl methacrylate) (PMMA-LiCF₃SO₃) system, the LiBF₄ salted-poly(methyl methacrylate) (PMMA-LiBF₄) system, the LiCF₃SO₃ salted-poly(methyl methacrylate) containing a fixed amount of plasticizer ([PMMA-EC]-LiCF₃SO₃) system, and the LiBF₄ salted-poly(methyl methacrylate) containing a fixed amount of plasticizer ([PMMA-EC]-LiBF₄) system. The conductivities of the films from each system are characterized by impedance spectroscopy. The room temperature conductivity in the pure PMMA sample and (PMMA-EC) system is 8.57 × 10⁻¹³ and 2.71 × 10⁻¹¹ S cm⁻¹, respectively. The room conductivity for the highest conducting sample in the (PMMA-LiCF₃SO₃), (PMMA-LiBF₄), ([PMMA-EC]-LiCF₃SO₃), and ([PMMA-EC]-LiBF₄) systems is 3.97 × 10⁻⁶, 3.66 × 10⁻⁷, 3.40 × 10⁻⁵, and 4.07 × 10⁻⁷ S cm⁻¹, respectively. The increase in conductivity is due to the increase in number of mobile ions, and decrease in conductivity is attributed to ion association. The increase and decrease in the number of ions can be implied from the dielectric constant, ɛ_r-frequency plots. The conductivity–temperature studies are carried out in the temperature range between 303 and 373 K. The results show that the conductivity is increased when the temperature is increased and obeys Arrhenius rule. The plots of loss tangent against temperature at a fixed frequency have showed a peak at 333 K for the ([PMMA-EC]-LiBF₄) system and a peak at 363 K for the ([PMM-EC]-LiCF₃SO₃) system. This peak could be attributed to β-relaxation, as the measurements were not carried out up to glass transition temperature, T _g. It may be inferred that the plasticizer EC has dissociated more LiCF₃SO₃ than LiBF₄ and shifted the loss tangent peak to a higher temperature. Paper presented at the Third International Conference on Ionic Devices (ICID 2006), Chennai, Tamilnadu, India, Dec. 7–9, 2006     

Tailoring the microwave permittivity and permeability of composite materials

The microwave permittivity (ɛ_r) and permeability (μ_r) of composite materials are tailored by adding various loading agents to a host plastic and are subsequently modeled using the Maxwell Garnett theory and second order polynomials. With the addition of manganese zinc ferrite, strontium ferrite, nickel zinc ferrite, barium tetratitanate and graphite powders, materials with values of ɛ′, e″, μ′, μ″ as high as 22, 5, 2.5 and 1.7 have been obtained. Permittivity and permeability data are calculated at 2.0245 GHz from reflection and transmission measurements performed in a 7 mm coaxial test line. The Maxwell Garnett (MG) theory successfully models ɛ_r if the filling factor is less than 0.30 and ratio |ɛ₁| (host)/ |ɛ₂| (powder) is greater than 0.04. As this ratio decreases, the MG theory is shown to be independent of ɛ₂ and second order polynomials are used to effectively model the dielectric constant. Polynomials are also used for the ferrite composites because it was determined that the MG theory was unable to model μ_r. This deficiency is attributed to the difference of domain structures that exist in powdered and sintered ferrites.     

Temperature stable low loss PTFE/rutile composites using secondary polymer

Rutile filled PTFE composites have been fabricated through Sigma Mixing, Extrusion, Calendering and Hot pressing (SMECH) process. Dielectric constant (e_r￠\varepsilon_{r}') and loss tangent (tan δ) of filled composites at microwave frequency region were measured by waveguide cavity perturbation technique using a Vector Network Analyzer. The temperature coefficient of dielectric constant (t_er￠\tau_{\varepsilon_{r}'}) was measured in the 0–100°C temperature range. In order to tailor the temperature coefficient of dielectric constant of the composite, thermoplastic Poly (ether ether ketone) (PEEK) has been used as a secondary polymer. Flexible laminate having a dielectric constant, e_r￠ ~ 10.4\varepsilon_{r}'\sim10.4, loss tangent tan δ∼0.0045 and t_er￠ ~ -40 ppm/K\tau_{\varepsilon_{r}'}\sim-40\mbox{ ppm}/\mbox{K} was realized in Polytetrafluroethylene (PTFE)/rutile composites with the addition of 8 wt% PEEK. The reduction in t_er￠\tau_{\varepsilon_{r}'} is mainly attributed to the positive t_er￠\tau_{\varepsilon_{r}'} of PEEK and increased interface region in the composites as a result of the PEEK addition.     

Electrical conductivity and dielectric constant of A-type Nd2O3

The measurements of electrical conductivity (σ) from 300 to 1200 K and dielectric constant (ε′) from 4·2 to 1200 K of A-type Nd₂O₂ pellets are reported here. Electrical conductivity (σ) data can be explained in terms of impurity. The dielectric constant (ε′) increases slowly up to 500 K as is expected for ionic solids. The increase ofε′ becomes much faster above 500 K, which is attributed to space charge polarization of thermally generated charge carriers.     

Electric-field dependence of dielectric properties of sol-gel derived Ba(Zr0.2Ti0.8)O3 ceramics

The effect of a dc bias field on the diffuse phase transition and nonlinear dielectric properties of sol-gel derived Ba(Zr_0.2Ti_0.8)O₃ (BZT) ceramics are investigated. Diffuse phase transitions were observed in BZT ceramics and the Curie–Weiss exponent (CWE) was γ∼2.0. The dielectric constant versus temperature characteristics and the γ in the modified Curie–Weiss law, ε ⁻¹=ε _m ⁻¹[1+(T−T _m ) ^γ /C₁](1≤γ≤2), as a function of the dc bias field was obtained for BZT ceramics. The results indicated that γ is a function of dc bias field, and the γ value decreased from 2.04 to 1.73 with dc bias field increasing from 0 to 20 kV/cm. The dielectric constant decreases with increasing dc bias field, indicating a field-induced phase transition. The dc bias field has a strong effect on the position of the dielectric peak and affects the magnitude of the dielectric properties over a rather wide temperature range. The peak temperature of the dielectric loss does not coincide with the dielectric peak and an obvious minimum value for the dielectric loss at the temperature of the dielectric peaks is observed. At room temperature, 300 K, the high tunability (K=80%), the low loss tangent (≈0.01) and the large FOM (74), clearly imply that these ceramics are promising materials for tunable capacitor-device applications.     

On a current mechanism in Ta2O5 thin films

Electrical conduction in the temperature range of 120–370 K has been studied in sandwiched structures of Al/Ta₂O₅/Si. The tantalum oxide films were prepared by evaporation of tantalum on a p-Si crystal substrate, followed by oxidation at a temperature of 600°C. The temperature-dependent current-voltage (I–V) characteristics are explained on the basis of a phonon-assisted tunnelling model. The same explanation is given for I–V data measured on Ta₂O₅ films by other investigators. From the comparison of experimental data with theory the density of states in the interface layer is derived and the electron-phonon interaction constant is assessed.      

Electroluminescence in lead titanate single crystals

Electroluminescence in PbTiO₃ single crystals is studied with variation in applied electric field, frequency (20 Hz to 5 kHz) and temperature. The EL onset depends on the rate at which the dipole switches. Extremely sharp upward rising nature of the pulses of micro second duration suggest that there is a self maintained discharge in the dielectric due to secondaryγ _p mechanism. Frequency dependence of EL suggests that both the secondary mechanisms, viz. theγ _p andγ _i are active after the application of a high field and the critical field at which this occurs decreases with increase in the frequency of the applied voltage. Similarly the onset voltage decreases with increase in frequency. The temperature dependence of EL at the applied frequency of 50 Hz shows that the onset voltage is intimately connected with the coercive field of the crystal and it is minimum at the Curie point. The study suggests that EL occurs in the bulk and there is a breakdown in the dielectric due to an avalanche formation.     

Dielectric spectroscopy of PbZr1 ? xTixO3 solid solutions (0.495 ≤ x ≤ 0.51) in a temperature range of 100–300 K at frequencies from 1 × 10?2 to 2 × 107 Hz

The behavior of the relative permittivity ɛ/ɛ₀ of PbZr_{1 − x} Ti _x O₃ (PZT) solid solutions (0.495 ≤ x ≤ 0.51) in the temperature range of 100–300 K at frequencies from 1 × 10⁻² to 2 × 10⁷ Hz was investigated. Diffuse, strongly relaxing maxima at T = 230−260 K (x = 0.495−0.505) and 150–160 K (x = 0.510) were observed in the PZT studied. The relaxation processes are well described by the Vogel-Fulcher law, and the dielectric spectra are approximated by the Cole-Cole formula.     

Temperature-dependent capacitance–voltage biasing of the highly tunable TlGaTe2 crystals

The temperature effects on the capacitance–voltage characteristics as well as the room temperature capacitance–frequency characteristics of TlGaTe₂ crystals are investigated. A very wide range of linearly varying tunable capacitance from 6.0 μF to 60 pF was recorded. The capacitance–voltage characteristics, being recorded in the temperature range of 290–380 K, revealed a linear increase in the build in voltage associated with exponential decrease in the density of non-compensated ionized carriers with increasing temperature. The high temperature (up to 380 K) biasing ability, the linear tunability and the high dielectric constant values (∼10³) make the TlGaTe₂ crystals applicable in microelectronic components.     

Effect of gamma irradiation on the dielectric properties and electrical conductivity of the TlInS<Subscript>2</Subscript> single crystal

The effect of gamma irradiation on the dielectric properties and ac conductivity of a TlInS₂ single crystal with a layered structure has been investigated in the frequency range from 5 × 10⁴ to 3.5 × 10⁷Hz. It has been shown that gamma irradiation of the TlInS₂ single crystal with a dose of 10⁴–2.25 × 10⁶ rad leads to a considerable increase in the dielectric loss tangent tanδ, the real part ɛ′ and imaginary part ɛ″ of the complex permittivity, and the ac conductivity σ _ac across the layers. It has been established that, for all gamma irradiation doses, the TlInS₂ single crystal is characterized by the dielectric loss due to electrical conduction up to a frequency of 10⁷ Hz and by the relaxation loss at a higher frequency. Irradiation of the TlInS₂ single crystal results in an increase in the dispersion of tan δ, ɛ′, and ɛ″. It has been demonstrated that, as the gamma irradiation dose is accumulated in the TlInS₂ single crystal, the density of localized states near the Fermi level N _F increases (from 5.2 × 10¹⁸ to 1.9 × 10¹⁹ eV⁻¹ cm⁻³).