Simple and rapid synthesis of NiO/PPy thin films with improved electrochromic performance

Nickel oxide/polypyrrole (NiO/PPy) thin films were deposited by a two step process in which the NiO layer was electrodeposited potentiostatically from an aqueous solution of NiCl₂·6H₂O at pH 7.5 on fluorine doped tin oxide (FTO) coated conducting glass substrates, followed by the deposition of polypyrrole (PPy) thin films by chemical bath deposition (CBD) from pyrrole mixed with ammonium persulfate (APS). The NiO/PPy films were further characterized for their structural, optical, morphological and electrochromic properties. X-ray diffraction study indicates that the films composed of polycrystalline NiO and amorphous PPy. Infrared transmission spectrum reveals chemical bonding between NiO and PPy. Rectangular faceted grains were observed from scanning electron microscopy results. The electrochromic (EC) property of the film was studied using cyclic voltammogram (CV), chronoamperometry (CA) and optical modulation. The NiO/PPy presents superior EC properties than their individual counterparts. The coloration/bleaching kinetics (response time of few ms) and coloration efficiency (358 cm²/C) were found to be improved appreciably. The dramatic improvement in electrochemical stability (from about 500 c/b cycles for PPy to 10,000 c/b cycles for NiO/PPy) was observed. This work therefore demonstrates a cost-effective and simple way of depositing highly efficient, faster and stable NiO/PPy electrodes for EC devices.     

Effect of gas-timing technique on structure and optical properties of sputtered zinc oxide films

Zinc oxide thin films were prepared by the RF magnetron sputtering using a gas-timing technique whereby the flow of argon into the sputtering chamber was controlled by an on–off sequence. With this technique, polycrystalline ZnO thin films on glass substrates have been achieved without any thermal treatment of the substrate. In addition, the RF power and the gas-timing sequence can be fine-tuned to produce the hexagonal structure of ZnO thin films. X-ray diffraction (XRD) measurements confirm a (0 0 2) plane oriented wurtzite structure ZnO thin films. The optimized conditions for this hexagonal structure are an RF power of 30 W and an on–off gas-timing sequence of 50:2 s. The root mean square surface roughness of ZnO thin films measured by atomic force microscopy are in the range of 6.4–11.5 nm. The optical transmittance of ZnO thin films is over 85% in the visible range.     

Anomalous electrical transport properties of amorphous carbon films on Si substrates

Amorphous carbon (a-C) films are deposited on n-Si substrates at different temperatures using pulsed laser deposition. Some anomalous current-voltage (I-V) characteristics of the a-C/n-Si are reported. The films deposited at 27 °C have an apparent voltage-induced switch effect, and the value of the switch voltage decreases with increasing temperature. However, the I-V characteristics of the a-C/n-Si deposited at 300 °C and 500 °C are completely different from those deposited at 27 °C. The anomalous I-V characteristics should be of interest for various applications such as field effect devices. In addition, the magnetoresistance (MR) and the resistance of the a-C/n-Si have been studied. Finally, we interpret the anomalous I-V characteristics and MR observed by use of energy band theory.     

Structures,morphological control,and antibacterial performance of tungsten oxide thin films

The present work describes structural, morphological, and antibacterial properties of thin film coatings based on tungsten oxide material on stainless-steel substrates. Thin films were prepared by RF magnetron sputtering of W targets in the oxygen/argon plasma environment in 60 W sputtering power. The characterization of the specimens was made on the basis of microstructure and antibacterial properties of the thin films surface. The effect of O₂/Ar ratio on the structure, morphology, and antibacterial properties of the tungsten oxide thin films was studied. Methods such as X-ray diffraction (XRD), scanning electron microscope (SEM), and Fourier Transform Infrared Spectroscopy (FTIR) were used to assess the properties of deposited thin films. XRD peak analysis indicates (100) and (200) of WO₃ phase with hexagonal structure. Moreover, the micro-strain, grain size, and dislocation density were obtained. It is noteworthy that by increasing the oxygen percentage from 10% to 20%, the grain size decreases from 81 to 23 nm while the film micro-strain and dislocation density increases. The SEM results illustrates that tungsten oxide thin films are made of interconnected nano-points in a chain shape with sphere-shaped grains with diameter variation from 10 to 100 nm. The FTIR spectra displays four distinct bands corresponds to O–W–O bending modes of vibrations and W–O–W stretching modes of the WO₃ films. The antibacterial effects of tungsten oxide thin films on steel stainless substrate against Escherichia coli bacteria are also examined for the first time and our observation shows that the number of bacteria on all tungsten oxide samples decreases after 24 h. The samples exhibit an excellent antibacterial performance. This paper renders a strategy through which the tungsten oxide thin films for antibacterial purpose and proposes that WO₃ thin films are ideal for various medical applications including stainless steel medical tools, optical coatings, and antibacterial coatings.     

Stability scheme of ZnO-thin film resistive switching memory: influence of defects by controllable oxygen pressure ratio

We report a stability scheme of resistive switching devices based on ZnO films deposited by radio frequency (RF) sputtering process at different oxygen pressure ratios. I-V measurements and statistical results indicate that the operating stability of ZnO resistive random access memory (ReRAM) devices is highly dependent on oxygen conditions. Data indicates that the ZnO film ReRAM device fabricated at 10% O₂ pressure ratio exhibits the best performance. Transmission electron microscopy (TEM) and X-ray diffraction (XRD) of ZnO at different O₂ pressure ratios were investigated to reflect influence of structure to the stable switching behaviors. In addition, PL and XPS results were measured to investigate the different charge states triggered in ZnO by oxygen vacancies, which affect the stability of the switching behavior.     

不同衬底上ZnO:Al透明导电薄膜的性能

室温下,采用射频磁控溅射法在玻璃和聚对苯二甲酸乙二醇酯（polyethylene terephthalate,PET）上沉积了掺铝的氧化锌（ZnO：Al,AZO）透明导电薄膜。通过X射线衍射仪分析不同衬底上AZO薄膜的结构,采用四探针测试仪及紫外可见光分光光度计测试薄膜的光电性能。结果表明：沉积在两种衬底上的AZO薄膜都具有六方纤锌矿结构,最佳取向均为[002]方向;玻璃衬底和PET衬底上制备的AZO薄膜的方阻分别为19/sq和45/sq,薄膜透光率均高于90%。实验表明,柔性衬底透明导电氧化物薄膜可以代替硬质衬底透明导电薄膜使电子器件向小型化、轻便化方向发展。     

Effects of NIR annealing on the characteristics of al-doped ZnO thin films prepared by RF sputtering

Aluminum-doped zinc oxide (AZO) thin films have been deposited on glass substrates by employing radio frequency (RF) sputtering method for transparent conducting oxide applications. For the RF sputtering process, a ZnO:Al₂O₃ (2 wt.%) target was employed. In this paper, the effects of near infrared ray (NIR) annealing technique on the structural, optical, and electrical properties of the AZO thin films have been researched. Experimental results showed that NIR annealing affected the microstructure, electrical resistance, and optical transmittance of the AZO thin films. X-ray diffraction analysis revealed that all films have a hexagonal wurtzite crystal structure with the preferentially c-axis oriented normal to the substrate surface. Optical transmittance spectra of the AZO thin films exhibited transmittance higher than about 80% within the visible wavelength region, and the optical direct bandgap (E_g) of the AZO films was increased with increasing the NIR energy efficiency.     

The effect of a buffer layer on the structure and the performance of cutting-tools for ZrWN films that are deposited using DCMS and HIPIMS

This paper determines the optimal settings for the deposition of ZrWN nitride films using reactive direct current magnetron sputtering (DCMS) and high-power impulse magnetron sputtering (HIPIMS), with pure Zr and W metal targets and Ar plasma and N₂ reactive gases. The materials tested as buffer layers are metal tungsten (W) and tungsten nitride (WN) thin films. Using a Taguchi method, this study determines the effect of deposition parameters for the buffer layer (W DC power, substrate bias, N₂/(N₂+Ar) flow rate and substrate temperature) on the structural and mechanical properties, and the dry machining performance of cutting-tools for multilayer ZrWN/W and ZrWN/WN/substrates. In the confirmation runs using grey Taguchi analysis, there is an improvement of 32.31% and 13.38% in surface roughness and flank wear, respectively. The films are characterized using X-ray diffraction (XRD), atomic force microscopy (AFM), scanning electron microscopy (SEM), transmission electron microscopy (FEI-TEM) and a nanoindenter. The TEM pattern for the ZrWN films shown corresponds to the (111), (200) and (220) planes of the face-center-cubic phase. Pretreatment of a tungsten carbide tool uses oxygen plasma etching to enhance the adhesion of the multilayer ZrWN/WN coating. Compared with coatings that are deposited using DCMS, the samples that are deposited using HIPIMS exhibit a higher film density and a smoother surface. In the HIPIMS mode, the XRD diffraction peaks of the films are sharper and more intense, which indicates an improvement in crystallinity.     

Farming of ZnO nanorod-arrays via aqueous chemical route for photoelectrochemical solar cell application

A low temperature aqueous chemical route is employed for the synthesis of zinc oxide (ZnO) nanorod arrays onto the soda lime and fluorine-doped tin oxide (FTO) coated glass substrates at various deposition times. Synthesis/farming of ZnO nanorod arrays (ZNRs) consists of the three-step as-ZnO seed forming, ZnO seed sowing followed by ZnO nanorod arrays growing. The length and diameter of ZnO nanorods increased with the reaction time prolonging. The physical, chemical and morphological properties were analyzed by means of X-ray diffraction (XRD), UV–visible spectroscopy (UV–vis), photoluminescence (PL), energy dispersive spectroscopy (EDS) and scanning electron microscopy (SEM) respectively. The XRD pattern revealed wurtzite crystal structures of ZNRs, preferentially orienting in the (002) direction. SEM micrographs show that the ZnO nanorods grew up perpendicular to the substrate and their length increases with increase in deposition time. Finally, the photoelectrochemical (PEC) performance of ZNRs thin films were studied. The junction quality factor upon illumination (n_l), series and shunt resistance (R_s and R_sh), flat-band-potential (V_FB), fill factor (FF) and efficiency (η) have been estimated.     

Multispectral photodetection using low-cost sputtered NiO/Ag/ITO heterostructure: From design concept to elaboration

High-performance multispectral photodetectors (PDs) are highly attractive for the emerging optoelectronic applications. In this work, a new broadband PD based on p-NiO/Ag/n-ITO heterostructure was fabricated by RF magnetron sputtering technique at room temperature. The tri-layered structure offering multispectral detection property was first identified using theoretical calculations based on combined FDTD and Particle Swarm Optimization (PSO) techniques. The crystal structure of the elaborated sensor was analyzed using X-ray diffraction (XRD) method. The device optical properties were investigated by UV–Vis–NIR spectroscopy. The NiO/Ag/ITO heterostructured PD shows a high average absorbance of 63% over a wide spectrum range of [200 nm–1100nm]. Compared with NiO and ITO thin-films, the performances of the heterostructured device are considerably enhanced. It was found that the prepared PD with NiO/Ag/ITO heterostructure merges the benefits of multispectral photodetection with reduced optical losses and efficient transfer of photo-induced carrier. The device demonstrated a high I_ON/I_OFF ratio of 78 dB and an enhanced responsivity under UV, visible and NIR lights (171 mA/W at 365 nm, 67 mA/W at 550 nm and 93 mA/W at 850 nm). The broadband photodetection property enabled by the optimized NiO/Ag/ITO heterostructure opens a new route for the elaboration of low-cost devices that can offer multiple sensing purposes, which are highly suitable for optoelectronic applications.     

SAW devices based on ZnO inclined c-axis on diamond

A thin zinc oxide (ZnO) films with inclined c-axis are deposited on the nucleation side of self-standing diamond substrates with. r.f. magnetron sputtering and a zinc-oxide target. The films are characterized by X-ray diffraction (XRD) with a χ-scan analysis. We have measured a c-axis angle of inclination of 45° in the case of ZnO/Diamond structure. The velocity and the electromechanical coupling coefficient is theoretically determined by the effective piezoelectric permittivity method for three angles of inclination (0°, 45°, 90°). Several SAW devices were developed on the ZnO(45°)/diamond structure.     

Room temperature deposition of XRD-amorphous TiO2 thin films: Investigation of device performance as a function of temperature

In this study, TiO₂ thin films were fabricated by radio frequency sputtering at room temperature in pure Ar atmosphere starting from a 6?in. TiO₂ target. The thickness of the films was controlled by deposition time and the effect of Ar sputtering pressure on the characteristics of TiO₂ thin films was evaluated. Surface morphology and optical properties of TiO₂ films were investigated using X-ray diffraction (XRD), Atomic Force Microscopy (AFM), Scanning Electron Microscopy (SEM) and UV–Vis spectrophotometry. Also, the refractive index and extinction coefficient of films were inferred by fitting spectrophotometric data. Schottky diode were fabricated by evaporation of Ni on TiO₂ films. Current-voltage (I-V) measurements of Ni/TiO₂ films showed that the rectifying properties of the device improves with the increasing of TiO₂ film density and thickness. Therefore, the best I-V characteristic of the device was investigated depending on the temperature. Also, Ni/n-TiO₂/p-Si/Al devices were fabricated to understand their transport mechanism.     

采用磁控溅射法在细菌纤维素膜上制备高性能的铟锡氧化物薄膜

Microbial cellulose (MC) membranes produced by Acetobacter xylinum NUST4.1,were used as flexible substrates for the fabrication of transparent indium tin oxide (ITO) electrodes.Transparent and conductive ITO thin films were deposited on MC membrane at room temperature using radio frequency (RF) magnetron sputtering.The optimum ITO deposition conditions were achieved by examining crystalline structure,surface morphology and op-toelectrical characteristics with X-ray diffraction (XRD),scanning electron microscopy (SEM),atomic force mi-croscopy (AFM),and UV spectroscopy.The sheet resistance of the samples was measured with a four-point probe and the resistivity of the film was calculated.The results reveal that the preferred orientation of the deposited ITO crystals is strongly dependent upon with oxygen content (O2/Ar,volume ratio) in the sputtering chamber.And the ITO crystalline structure directly determines the conductivity of ITO-deposited films.High conductive [sheet resis-tance ～120 Ω·square-1 (Ω·sq-1)] and transparent (above 76%) ITO thin films (240 nm thick) were obtained with a moderate sputtering power (about 60 W) and with an oxygen flow rate of 0.25 ml·min-1 (sccm) during the deposi-tion.These results show that the ITO-MC electrodes can find their potential application in optoelectrical devices.     

Microstructure,optical and electrical properties of sputtered HfTiO high-k gate dielectric thin films

The microstructure, optical and electrical properties of HfTiO high-k gate dielectric thin films deposited on Si substrate and quartz substrate by RF magnetron sputtering have been investigated. Based on analysis from x-ray diffraction (XRD) measurements, it has been found that the as-deposited HfTiO films remain amorphous regardless of the working gas pressure. Meanwhile, combined with characterization of ultraviolet-visible spectroscopy (UV–vis) and spectroscopy ellipsometry (SE), the deposition rate, band gap and optical properties of sputtered HfTiO gate dielectrics were determined. Besides, by means of the characteristic curves of high frequency capacitance–voltage (C–V) and leakage current density–voltage (J–V), the electrical parameters, such as permittivity, total positive charge density, border trap charge density, and leakage current density, have been obtained. The leakage current mechanisms are also discussed. The energy band gap of 3.70 eV, leakage current density of 1.39×10⁻⁵ A/cm² at bias voltage of 2 V, and total positive charge density and border trap charge density of 9.16×10¹¹ cm⁻² and 1.3×10¹¹ cm⁻², respectively render HfTiO thin films deposited at 0.6 Pa, potential high-k gate dielectrics in future CMOS devices.     

The evolution behavior of microstructures and optical properties of ZnO films using a Ti buffer layer

ZnO thin films without and with Ti buffer layer were prepared on Si and glass substrates by radio frequency (RF) magnetron sputtering. The effects of Ti buffer layer with different sputtering time on the microstructure and optical properties of ZnO thin films had been investigated by means of X-ray diffraction (XRD), energy dispersive spectrometer, X-fluorescence spectrophotometer and ultraviolet–visible spectrophotometer. The XRD results showed that the full-width at half-maximum (FWHM) for the ZnO (002) diffraction peak gradually decreased with the increase of sputtering time of Ti buffer layer, indicating that the crystalline quality of ZnO thin films was improved. The UV peak located at 390 nm, two blue peaks located at about 435 and 487 nm, two green peaks located at about 525 and 560 nm were observed from PL spectra. The PL spectra showed that the strongest blue light emission of ZnO films was obtained from Ti buffer layer with the sputtering time of 10 min. Meanwhile, the origins of the emission peaks were discussed through the Gaussian deconvolution. We also studied the optical band gaps.     

Effects of power and temperature on the structural,anti-icing,wettability, and optical properties of zinc oxide thin films

Zinc oxide semiconductors have received significant research attention over the past decade owing to their diverse applications. In this paper, we report the development and characterisation of ZnO thin films prepared by radio-frequency (RF) magnetron sputtering. The optical, anti-icing, wettability, and structural properties of the films were investigated at various sputtering power levels and temperatures. With an increase in the power from 175 to 250 W, the ZnO thin films showed fine (002) structures. X-ray diffraction analysis of the coated thin films revealed a considerable increase in the (002) peak intensity along the c-axis with increasing power and temperature. Increasing the sputtering power from 175 to 250 W and the deposition temperature from 150 to 300 °C led to an increase in the average size of the grains from 10.548 to 13.151 nm and from 9.97 to 13.151 nm, respectively. The water contact angle possibly depends on the RF power and temperature employed for material deposition. Within the 350–800 nm range, the prepared films achieved optical transmissions of 92%–88%, refractive indices of 1.52–1.50, and band gaps of 3.28–3.24 eV. The anti-icing properties were also improved by adjusting the sputtering power and temperature during material deposition.     

Performance of an anode-supported SOFC with anode functional layers

Before fabrication of dense yttria-stabilized zirconia films, several thin anode functional layers (AFL) were fabricated onto porous NiO/yttria-stabilized zirconia anode substrates using slurry spin coating. The effect of AFL thickness on gas impermeability and performance of a cell was investigated by studying the effect of AFL thickness on the open-circuit voltage, ohmic resistance, I-V characteristics and electrode overpotential of cells. The results of investigation indicated that as the AFL thickness increased, the gas impermeability of cells was generally improved and the ohmic resistance of cells was increased. The cell with a 5-μm-thick AFL exhibited an excellent cell performance, for example, a single cell with this AFL exhibited an output power of 2.63 W cm⁻² at 800 °C when hydrogen was used as fuel and an oxygen was used as oxidant.     

Potentiostatic electrodeposition of cuprous oxide thin films for photovoltaic applications

Potentiostatic deposition of Cu₂O thin films on glass substrates coated with F-doped SnO₂ from an alkaline electrolyte solution (pH 12.5) containing copper (II) sulfate and lactic acid was studied for fabrication of a Cu₂O/Al-doped ZnO (AZO) heterojunction solar cell. The band gap of the electrodeposited Cu₂O films was determined by photoelectrochemical measurements to be around 1.9 eV irrespective of the applied potentials. The solar cells with a glass/FTO/Cu₂O/AZO structure were fabricated by sputtering an AZO film onto the Cu₂O film followed by deposition of an Al contact by vacuum evaporation. The highest efficiency of 0.603% was obtained with a Cu₂O film deposited at −0.6 V (vs. Ag/AgCl). This was attributed to better compactness and purity of the Cu₂O film than those of the Cu₂O films deposited at other potentials.     

Structural and electrochemical characterization of SnOx thin films for Li-ion microbattery

SnO_x thin films were prepared by reactive radio frequency magnetron sputtering with different sputtering powers. X-ray photoelectron spectroscopy suggested that all the films have similar chemical stoichiometry as SnO_1.5. X-ray diffraction and transmission electro microscopy results showed that crystal size of the SnO_x thin films gradually increases with increase of sputtering power from 50 to 150 W. Cyclic voltammetry and galvanostatic charge/discharge cycling measurements indicated that the electrochemical properties of SnO_x films strongly rely on their crystal sizes as well as surface morphologies. The SnO_x film deposited at sputtering power of 120 W exhibits the best electrochemical performances. It could deliver a reversible capacity of 670 μAh cm⁻² μm⁻¹ at 50 μA cm⁻² in the voltage range of 0.1-1.2 V up to 50 cycles.     

Domain epitaxy of crystalline BeO films on GaN and ZnO substrates

We demonstrated the growth of wurtzite-crystalline beryllium oxide (BeO) thin films on GaN and ZnO substrates using atomic layer deposition (ALD). Single-crystalline BeO were epitaxially grown on GaN. Despite the inherently large lattice mismatch of BeO and GaN atoms, the 6/5 and 7/6 domain-matched structures dramatically reduced the residual strain in BeO thin films. On the other hand, the lattice mismatch of BeO and ZnO was not effectively accommodated in the mixed domains. X-ray diffraction (XRD) confirmed the in-plane crystallization of BeO-on-substrates in the (002){102}_BeO||(002){102}_Sub orientation and relaxation degrees of 20.8% (GaN), 100% (ZnO). The theoretical critical thicknesses of BeO for strain relaxation were 2.2 μm (GaN) and 1.6 nm (ZnO), calculated using a total film energy model. Transmission electron microscopy (TEM) and Fourier-filtered imaging supported the bonding configuration and crystallinity of wurtzite BeO thin films on GaN and ZnO substrates.