Polaronic conductivity in the photoinduced phase of 1T-TaS2

The transient optical conductivity of photoexcited 1T-TaS2 is determined over a three-order-of-magnitude frequency range. Prompt collapse and recovery of the Mott gap is observed. However, we find important differences between this transient metallic state and that seen across the thermally driven insulator-metal transition. Suppressed low-frequency conductivity, Fano phonon line shapes, and a midinfrared absorption band point to polaronic transport. This is explained by noting that the photoinduced metallic state of 1T-TaS2 is one in which the Mott gap is melted but the lattice retains its low-temperature symmetry, a regime only accessible by photodoping.     

Lattice modes and charge density waves in 1T-TaS2

The far-infrared reflectivity of 1T-TaS₂ was measured at 100, 295 and 390 K. At the two highest temperatures, the spectra were featureless. Overall reflectivity dropped abruptly in cooling through 350 K and through 190 K. These transitions are correlated to CDW formation. At 100 K five strong bands and at least two weak bands were observed. These are attributed to lattice vibration which can be excited optically as a result of the breakdown of selection rules due to the formation of a large superlattice by the onset of CDW.     

Optical properties of the quasi-two-dimensional dichalcogenides 2H-TaSe and 2H-NbSe

We present a comprehensive analysis of the optical constants of the two-dimensional dichalcogenide materials 2 H - TaSe ₂ and 2 H - NbSe ₂ , in an attempt to address the physics of two-dimensional correlated systems. The title compounds were studied over several decades in frequency, from the far-infrared to the ultraviolet. Measurements with linearly polarized light have allowed us to obtain both the in-plane and out-of-plane components of the conductivity tensor. Although the electromagnetic response of dichalcogenides is strongly anisotropic, both the in-plane and out-of-plane components of the conductivity tensor share many common features, including the presence of a well-defined metallic component, as well as a “mid-infrared band”. We discuss the implications of these results in the context of the spectroscopic results of other classes of low-dimensional conductors such as the high-temperature superconducting cuprates. In particular, the analysis of the redistribution of the spectral weight as a function of temperature, as well as the behavior of the quasiparticles relaxation rate, points to significant distinctions between the charge dynamics of dichalcogenides and other classes of low dimensional conductors. Received 28 October 2002 / Received in final form 10 March 2003 Published online 23 May 2003 RID="a" ID="a"e-mail: degiorgi@solid.phys.ethz.ch     

Multiple scattering investigation of the 1T-TaS2 surface termination

Multiple scattering theory based on a cluster model is used to simulate full hemispherical X-ray photoelectron diffraction measurements on a 1T-TaS₂(0001) surface. Key points to determine the surface termination are discussed. As the commonly applied single scattering simulations do not give satisfying results, a multiple scattering approach has to be used to accurately simulate the full hemispherical photoelectron diffraction patterns. Differences and similarities between calculations of Ta and S terminated surfaces are presented along with experimental results at room temperature using both, the single and the multiple scattering approaches. We find that the surface is S terminated and that the quantitative difference between the calculations for both terminations permits to show the limits of the single scattering approach for solving surface termination problems. Moreover, by generalizing the results obtained using the multiple scattering approach, we discuss the application of this method to other similar systems.     

Continuous tuning of electronic correlations by alkali adsorption on layered 1T-TaS2

Angle-resolved photoemission spectroscopy shows that a Mott-Hubbard type metal-insulator transition occurs at the Rb adsorbed surface of the layered charge-density-wave compound 1T-TaS2. The transition is driven by adsorption induced modifications of the charge-density wave and of the interlayer coupling, leading to an increase of the on-site Coulomb correlation energy and a narrowing of the Ta 5d band perpendicular to the layers, respectively. The continuous rearrangement of spectral weight is measured live during the deposition process.     

Thermal conductivity of semiconducting amorphous CdGeAs2

The thermal conductivity of amorphous semiconducting CdGeAs₂ was studied between 100 and 300°K. The Debye model was used for the calculation of the mean free path of phonons which was found to be 10 Å at 300°K and was related to the basic structure units of amorphous CdGeAs₂.Thanks are due to Mrs. J. Beránková, Mr. J. Kapar and Mrs. J. Trepeová for the preparation of the amorphous CdGeAs₂ used in this work and for the measurements of the thermal parameters, and to Dr. J. urek and Dr. S. Kolník from the College of Transport Engineering, ilina, for the sound velocity measurements.     

Thermal conductivity of USb2 and UBi2 single crystals

The thermal conductivity (κ) of single crystals of tetragonal uniaxial antiferromagnets USb₂ (T _N = 202 K) and UBi₂ (T _N = 180.8 K) has been measured along the a-axis (κ_a ) over the temperature range from 0.5 to 300 K and along the c-axis (κ_c ) from 0.5 to 70 K. The as-grown samples have residual resistivity ratio (RRR) values of about 500–600 and 100–150 for UBi₂ and USb₂, respectively. The anisotropy of the thermal conductivity (κ_a (T)/κ_c (T) ～ 5) and the low-T Lorenz ratios are discussed in relation to Fermi surface topology for both compounds.     

双能隙超导体MgB2的热导

测量了多晶MgB2的热导，实验温区为5—300K.在双能隙模型下，用基于BCS超导理论的BRT热导理论对实验结果进行了分析，给出MgB2中两个能隙大小分别为16和51meV.对电子热导的分析结果表明σ能带准粒子受到的杂质散射远小于π能带准粒子受到的杂质散射.与单晶MgB2的热导实验结果相比，多晶MgB2的声子热导结果表明在c方向上热传导声子受到来自σ能带准粒子的散射，显示了MgB2在能量输运上的各向异性. 关键词： MgB2 热导率 能隙     

Thermal conductivity and expansion of PbF2 single crystals

In order to check a phenomenon of the negative correlation between ionic and thermal conductivities of solid substances, we studied the thermal conductivity and expansion of cubic PbF₂ single crystals at 50–300 and 5.6–317 K, respectively. We found that lead difluoride had a thermal expansion coefficient α that was equal to (28.5 ± 0.3)10⁻⁶ K⁻¹ at 300 K, and a thermal conductivity coefficient k(T) was equal to 1.40 ± 0.07 W/(m K) at the same temperature. Thus, the thermal conductivity for PbF₂ is the lowest among fluorite-type MF₂ (M = Ca, Sr, Ba, Cd, Pb) thermal conductivities, whereas its fluoride-ion conductivity is the highest one among MF₂ (M = Ca, Sr, Ba, Cd, Pb) ionic conductors.

     

The 2D-electric-field gradient profile in the incommensurate charge density wave state of 1T-TaS2

Using time differential perturbed angular correlation we probed the incommensurate 2D-plane wave charge density wave in 1T-TaS₂ via the¹⁸¹Ta nuclear quadrupole interaction. For the interpretation of the observed line profiles a non-local treatment of the ICDW-perturbation is required. Taking the tensorial character of the electric field gradient into account the wavelength of the CDW-modulation can be derived from the line profiles within an accuracy of better than 5%.     

Ultrafast melting of a charge-density wave in the Mott insulator 1T-TaS2

Femtosecond time-resolved core-level photoemission spectroscopy with a free-electron laser is used to measure the atomic-site specific charge-order dynamics of the charge-density?wave in the Mott insulator 1T-TaS2. After strong photoexcitation, a prompt loss of charge order and subsequent fast equilibration dynamics of the electron-lattice system are observed. On the time scale of electron-phonon thermalization, about 1?ps, the system is driven across a phase transition from a long-range charge ordered state to a quasiequilibrium state with domainlike short-range charge and lattice order. The experiment opens the way to study the nonequilibrium dynamics of condensed matter systems with full elemental, chemical, and atomic-site selectivity.     

Time evolution of the electronic structure of 1T-TaS2 through the insulator-metal transition

Femtosecond time-resolved photoemission is used to investigate the time evolution of electronic structure in the Mott insulator 1T-TaS2. A collapse of the electronic gap is observed within 100 femtoseconds after optical excitation. The photoemission spectra and the spectral function calculated by dynamical mean field theory show that this insulator-metal transition is driven solely by hot electrons. A coherently excited lattice displacement results in a periodic shift of the spectra lasting for 20 ps without perturbing the insulating phase. This capability to disentangle electronic and phononic excitations opens new directions to study electron correlation in solids.