Growth of aluminum nitride thin films prepared by plasma-enhanced atomic layer deposition

Aluminum nitride (AlN) thin films were deposited by atomic layer deposition from aluminum chloride (AlCl₃) and an ammonia/hydrogen plasma. The most important role of the ammonia/hydrogen plasma was to act as a reducing agent to extract Cl from AlCl₃, and to form AlN subsequently. The growth rate was saturated at ∼0.042 nm/cycle, and the thickness was proportional to the number of reaction cycles. Repeating this reaction cycle led to precisely controlled growth. The film properties were analyzed using Auger electron spectroscopy, X-ray photoelectron spectroscopy, Rutherford backscattering spectroscopy and time-of-flight elastic recoil detection analysis. The concentration of chlorine and hydrogen impurities was 0.23 and 2.01 at.%, respectively. AlN films showed good anti-oxidation properties when O₂ was annealed at 650 °C for 30 min.     

Growth behavior of iridium on Si substrates prepared by plasma enhanced atomic layer deposition

Growth behavior of iridium (Ir) thin film on Si substrates prepared by plasma enhanced atomic layer deposition (PEALD) was systematically studied. Ir(EtCp)(COD) and oxygen was employed as a precursor and reactant, respectively. To obtain optimal conditions for depositing nanometer scale Ir thin film, deposition temperature, cycle dependence and precursor feeding time dependence were studied. Uniform 12 nm thick Ir layer with sharp interface was grown at the temperature range of 330-360 degrees C at the fixed deposition cycles of 300. The grown Ir film showed linear properties as a function of deposition cycles which is a typical self-limiting characteristic of ALD. The XRD patterns revealed that IrOx was not formed due to relatively low partial pressure of oxygen. The optimal conditions obtained for 12 nm thick Ir thin film were 330 degrees C of deposition temperature, 300 deposition cycles, and 10 sec of precursor feeding time.     

Characteristics of ZnO films prepared by atomic layer deposition for transparent electronic devices

Recently, nanostructured zinc oxide (ZnO) for many different applications in micro- and opto-electronic devices has been studied intensively. However, its structural and electrical properties still require improvements for ZnO-based transparent electronics. In this study, we fabricated ZnO films (thicknesses from 30 to 70 nm) on glass substrates using atomic layer deposition (ALD) and investigated the film properties in relation with substrate temperatures. The processing window (thermal ALD window) of self-limiting growth was observed at 110-190 degrees C. In our thermal ALD window, the average growth rate of ZnO films was 0.26 nm/cycle, and the (002) orientation became dominant with increasing substrate temperatures. For all growth temperatures, ZnO films have shown n-type conductivity. At 170 degrees C, ZnO with good electrical properties of carrier concentration (1.3 x 10(19) cm(-3)), mobility (18 cm2/Vs), and resistivity (2.7 x 10(-2) omegacm) was successfully obtained.     

Structure and morphology of aluminium doped Zinc-oxide layers prepared by atomic layer deposition

The aim of this work is to study the effects of deposition temperature and aluminium incorporation on the crystalline properties, orientation and grain size of atomic layer deposited ZnO layers. X-ray diffraction analysis revealed a change in the dominant crystallite orientation with increasing substrate temperature. The most perfect crystal structure and largest grain size was found at 2 at.% aluminium content. Accumulation of compressive strain developed a monotonous increase with the growth temperature. Electric resistivity showed no anisotropy despite the change in the orientation, therefore the dominant conduction mechanism is not grain boundary related.     

Surface modification of carbon post arrays by atomic layer deposition of ZnO film

The applicability of atomic layer deposition (ALD) process to the carbon microelectromechanical system technology was studied for a surface modification method of the carbon post electrodes. A conformal coating of the ALD-ZnO film was successfully demonstrated on the carbon post arrays which were fabricated by the traditional photolithography and subsequent two-step pyrolysis. A significant Zn diffusion into the underlying carbon posts was observed during the ALD process. The addition of a sputter-deposited ZnO interfacial layer efficiently blocked the Zn diffusion without altering the microstructure and surface morphology of the ALD-ZnO film.     

Ultrathin oxide films by atomic layer deposition on graphene

In this paper, a method is presented to create and characterize mechanically robust, free-standing, ultrathin, oxide films with controlled, nanometer-scale thickness using atomic layer deposition (ALD) on graphene. Aluminum oxide films were deposited onto suspended graphene membranes using ALD. Subsequent etching of the graphene left pure aluminum oxide films only a few atoms in thickness. A pressurized blister test was used to determine that these ultrathin films have a Young's modulus of 154 ± 13 GPa. This Young's modulus is comparable to much thicker alumina ALD films. This behavior indicates that these ultrathin two-dimensional films have excellent mechanical integrity. The films are also impermeable to standard gases suggesting they are pinhole-free. These continuous ultrathin films are expected to enable new applications in fields such as thin film coatings, membranes, and flexible electronics.     

常压干燥法制备的炭气凝胶的电化学性能研究

采用常压干燥法制备了炭气凝胶,对所制得的炭气凝胶进行了电化学性能的测试,并与日本进口的超级电容器用超级活性炭进行比较.实验结果表明,炭气凝胶具有优良的电容性能,电双层比电容量和高扫描速度下(100mV/s)的质量比电容量分别达到21μF/cm2和89F/g,高于日本进口超级电容器用超级活性炭.     

ZnO thin films prepared by atomic layer deposition and rf sputtering as an active layer for thin film transistor

Recently, the application of ZnO thin films as an active channel layer of transparent thin film transistor (TFT) has become of great interest. In this study, we deposited ZnO thin films by atomic layer deposition (ALD) from diethyl Zn (DEZ) as a metal precursor and water as a reactant at growth temperatures between 100 and 250 °C. At typical growth conditions, pure ZnO thin films were obtained without any detectable carbon contamination. For comparison of key film properties including microstructure and chemical and electrical properties, ZnO films were also prepared by rf sputtering at room temperature. The microstructure analyses by X-ray diffraction have shown that both of the ALD and sputtered ZnO thin films have (002) preferred orientation. At low growth temperature T_s ≤ 125 °C, ALD ZnO films have high resistivity (> 10 Ω cm) with small mobility (< 3 cm²/V s), while the ones prepared at higher temperature have lower resistivity (< 0.02 Ω cm) with higher mobility (> 15 cm²/V s). Meanwhile, sputtered ZnO films have much higher resistivity than ALD ZnO at most of the growth conditions studied. Based upon the experimental results, the electrical properties of ZnO thin films depending on the growth conditions for application as an active channel layer of TFT were discussed focusing on the comparisons between ALD and sputtering.     

Synchrotron X-ray reflectivity study of high dielectric constant alumina thin films prepared by atomic layer deposition

High dielectric constant (high-k) gate dielectric alumina films were prepared with nanoscale thicknesses on p-type silicon substrates by atomic layer deposition (ALD) with alternating pulses of trimethyl aluminum, nitrogen, ozone and nitrogen, and some of them were further thermally annealed. These high-k gate dielectric films were characterized by synchrotron X-ray reflectivity (XR), and the XR data were quantitatively analyzed, providing the following structural parameters of each gate dielectric film: the surface roughness and interfacial roughness, the electron density profile, the number of layers, and the thickness of individual layers. These structural characteristics were then analyzed in detail by considering the ALD processing conditions and post-thermal annealing history.     

Improved oxygen diffusion barrier properties of ruthenium-titanium nitride thin films prepared by plasma-enhanced atomic layer deposition

Ru-TiN thin films were prepared from bis(ethylcyclopentadienyl)ruthenium and tetrakis(dimethylamino)titanium using plasma-enhanced atomic layer deposition (PEALD). The Ru and TiN were deposited sequentially to intermix TiN with Ru. The composition of Ru-TiN films was controlled precisely by changing the number of deposition cycles allocated to Ru, while fixing the number of deposition cycles allocated to TiN. Although both Ru and TiN thin films have a polycrystalline structure, the microstructure of the Ru-TiN films changed from a TiN-like polycrystalline structure to a nanocrystalline on increasing the Ru intermixing ratio. Moreover, the electrical resistivity of the Ru0.67-TiN0.33 thin films is sufficiently low at 190 microomega x cm and was maintained even after O2 annealing at 750 degrees C. Therefore, Ru-TiN thin films can be utilized as a oxygen diffusion barrier material for future dynamic (DRAM) and ferroelectric (FeRAM) random access memory capacitors.     

Textured strontium titanate layers on platinum by atomic layer deposition

Formation of textured strontium titanate (STO) layers with large lateral grain size (0.2-1 μm) and low X-ray reflectivity roughness (~ 1.36 nm) on Pt electrodes by industry proven atomic layer deposition (ALD) method is demonstrated. Sr(t-Bu₃Cp)₂, Ti(OMe)₄ and O₃ precursors at 250 °C were used to deposit Sr rich STO on Pt/Ti/SiO₂/Si ∅200 mm substrates. After crystallization post deposition annealing at 600 °C in air, most of the STO grains showed a preferential orientation of the {001} plane parallel to the substrate surface, although other orientations were also present. Cross sectional and plan view transmission electron microscopy and electron diffraction analysis revealed more than an order of magnitude larger lateral grain sizes for the STO compared to the underlying multicrystalline {111} oriented platinum electrode. The combination of platinum bottom electrodes with ALD STO(O₃) shows a promising path towards the formation of single oriented STO film.     

Structural and electrical properties of ternary Ru–AlN thin films prepared by plasma-enhanced atomic layer deposition

Ruthenium–aluminum-nitride (Ru–AlN) thin films were grown by plasma-enhanced atomic layer deposition (PEALD) at 300 °C. The Ru intermixing ratio of Ru–AlN thin films was controlled by the number of Ru unit cycles, while the number of AlN unit cycles was fixed to one cycle. The electrical resistivity of Ru–AlN thin film decreased with increasing the Ru intermixing ratio, but a drastic decrease in electrical resistivity was observed when the Ru intermixing ratio was around 0.58–0.78. Bright-field scanning transmission electron microscope (BF-STEM) and energy-dispersive X-ray spectroscopy (EDX) element mapping analysis revealed that the electrical resistivity of Ru–AlN thin film was strongly dependent on the microstructures as well as on the Ru intermixing ratio. Although the electrical resistivity of Ru–AlN thin films decreased with increasing the Ru intermixing ratio, a drastic decrease in electrical resistivity occurred where the electrical paths formed as a result of the coalescence of Ru nanocrystals.     

Monocrystalline zinc oxide films grown by atomic layer deposition

In the present work we report on the monocrystalline growth of (00.1) ZnO films on GaN template by the Atomic Layer Deposition technique. The ZnO films were obtained at temperature of 300 °C using dietylzinc (DEZn) as a zinc precursor and deionized water as an oxygen precursor. High resolution X-ray diffraction analysis proves that ZnO layers are monocrystalline with rocking curve FWHM of the 00.2 peak equals to 0.07°. Low temperature photoluminescence shows a sharp and bright excitonic line with FWHM of 13 meV.     

X-ray mirrors on flexible polymer substrates fabricated by atomic layer deposition

Atomic layer deposition (ALD) techniques were used to fabricate W/Al₂O₃ superlattices with high X-ray reflectivity on flexible Kapton® polyimide and polyethylene naphthalate (PEN) polymer substrates. Reflectivities of 78% and 74% at λ = 1.54 Å were measured for 6-bilayer W/Al₂O₃ superlattices on Kapton® polyimide and PEN, respectively. These excellent X-ray reflectivities are attributed to precise bilayer thicknesses and ultrasmooth interfaces obtained by ALD and smoothing of the initial polymer surface by an Al₂O₃ ALD layer. The conformal ALD film growth also produces correlated roughness that enhances the reflectivity. These W/Al₂O₃ superlattices on flexible polymers should be useful for ultralight and adjustable radius of curvature X-ray mirrors.     

Mechanism of Pt loading on multi-walled carbon nanotubes

Microwave treatment of multi-walled carbon nanotubes (MWCNTs) with nitric acid (HNO3) and 0.2 M sodium chlorate (NaClO3) can generate and enhance defects on the surfaces of MWCNTs. These defects are the important sites to load Pt nanoparticles (NPs). We investigated the defect induced Raman spectra and observed a decrease in the R-values (D-band/G-band peak ratio) and a slight up-shift of the both peaks as the amount of loaded Pt NPs increased. Using the Brunauer-Emmett-Teller (BET) method, we observed that the pore size distribution and the pore volume changed according to the amount of Pt NPs loaded. Fewer micropores and mesopores were observed on MWCNTs loaded with Pt NPs. Based on the pore size distribution calculated from the BET results, Pt NPs loaded mainly on pores/defects with a size of 2-8 nm. Transmission electron microscopy and Raman spectroscopy results confirmed that most well-crystallized Pt NPs loaded on the surface defect sites and pores spontaneously through the exchange of electrons between Pt and C atoms.     

Photocatalytic activities of TiO2 thin films prepared on Galvanized Iron substrate by plasma-enhanced atomic layer deposition

Titanium dioxide (TiO₂) thin films were prepared on Galvanized Iron (GI) substrate by plasma-enhanced atomic layer deposition (PE-ALD) using tetrakis-dimethylamido titanium and O₂ plasma to investigate the photocatalytic activities. The PE-ALD TiO₂ thin films exhibited relatively high growth rate and the crystal structures of TiO₂ thin films depended on the growth temperatures. TiO₂ thin films deposited at 200 °C have amorphous phase, whereas those with anatase phase and bandgap energy about 3.2 eV were deposited at growth temperature of 250 °C and 300 °C. From contact angles measurement of water droplet, TiO₂ thin films with anatase phase and Activ™ glass exhibited superhydrophilic surfaces after UV light exposure. And from photo-induced degradation test of organic solution, anatase TiO₂ thin films and Activ™ glass decomposed organic solution under UV illumination. The anatase TiO₂ thin film on GI substrate showed higher photocatalytic efficiency than Activ™ glass after 5 h UV light exposure. Thus, we suggest that the anatase phase in TiO₂ thin film contributes to both superhydrophilicity and photocatalytic decomposition of 4-chlorophenol solution and anatase TiO₂ thin films are suitable for self-cleaning applications.     

Characterizations of NbAlO thin films grown by atomic layer deposition

Niobium-aluminate (NbAlO) thin films have been prepared on silicon (100) with different Nb₂O₅:Al₂O₃ growth cycle ratio by atomic layer deposition (ALD) technology. The structural, chemical and optical properties of NbAlO thin films are investigated using X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), and spectroscopic ellipsometry (SE). The results show that all the obtained NbAlO films are amorphous and fully oxidized. It is also found that the proportion of components in the NbAlO film can be well-controlled by varying the ALD growth cycles of the independent oxides. Furthermore, the refraction index of the prepared films is observed to increase with an increase of the concentration of Nb in the mixtures.     

Organic nanowire-templated fabrication of alumina nanotubes by atomic layer deposition

Alumina nanotubes were fabricated by a template method. Tris-(8-hydroxyquinoline) gallium (GaQ3) organic nanowires were used as a soft template for coating with alumina using an atomic layer deposition technique. The deposition was conducted at 25 degrees C by using trimethylaluminum and distilled water as the precursors of Al2O3. Amorphous alumina nanotubes were obtained after removing the GaQ3 by dissolving in toluene or by heat treatment at 350 degrees C. The amorphous nanotubes could be crystallized by heating at 900 degrees C for 1 h in vacuum.     

Growing oriented AlN films on sapphire substrates by plasma-enhanced atomic layer deposition

Technical Physics Letters - The possibility of growing oriented AlN films on Al2O3 substrates at temperatures below 300°C by plasma-enhanced atomic layer deposition was examined. The samples...