金属基体上YSZ过渡层及YBCO薄膜结构与沉积条件的关系

研究了两种在金属基体（ＨａｓｔｅｌｏｙＣ）上沉积的、以钇稳定的ＺｒＯ２（ＹＳＺ）为过渡层的ＹＢａ２Ｃｕ３Ｏ７－ｙ薄膜结构，并讨论了结构与沉积条件的关系。当沉积速率低时，ＹＳＺ层致密、均匀，存在织构取向，且与基体连接良好；而高速率沉积的ＹＳＺ层疏松，与基体结合差。ＹＢＣＯ薄膜的结构和性能与沉积时的基体温度相关。     

Transmission Electron Microscope Study of YBCO/CeO_2/Si Superconducting Multilayer Films

ＴｒａｎｓｍｉｓｉｏｎＥｌｅｃｔｒｏｎＭｉｃｒｏｓｃｏｐｅＳｔｕｄｙｏｆＹＢＣＯ／ＣｅＯ２／ＳｉＳｕｐｅｒｃｏｎｄｕｃｔｉｎｇＭｕｌｔｉｌａｙｅｒＦｉｌｍｓＬｉＨａｏ（李灏），ＬｉｕＡｎｓｈｅｎｇ（刘安生），ＧｕＨｏｎｇｗｅｉ（古宏伟），ＣｈｅｎＬ...     

Deposition of Biaxially Aligned YSZ Layers on Polycrystaline Metallic Substrate

ＴｈｅｇｒｏｗｔｈｏｆｈｉｇｈｑｕａｌｉｔｙｆｉｌｍｓｏｆＹＢａＣｕＯ（ＹＢＣＯ）ｏｎｐｏｌｙｃｒｙｓｔａｌｉｎｅｍｅｔａｌｉｃａｌｏｙｓ，ｓｕｃｈａｓｓｔａｉｎｌｅｓｓｔｅｅｌｏｒｎｉｃｋｅｌｂａｓｅｄａｌｏｙｓ，ｉｓｄｅｓｉｒａｂｌｅｆｏｒｅｌｅ...     

Preparation of CeO2 Buffer Layer on Cube Textured Nickel Substrate by Reactive Sputtering

Preparation of CeO_2 Buffer Layer on Cube Textured Nickel Substrate by Reactive Sputtering     

大面积YBCO超导薄膜沉积工艺

用大直径中空柱状阴极直流磁控溅射装置，在Φ５１ｍｍＬａＡｌＯ３衬底上制备了ＹＢＣＯ薄膜。利用Ｘ射线衍射、电子通道花样、Φ扫描、扫描电镜对薄膜进行了分析。在５１ｍｍ直径范围内薄膜的零电阻温度Ｔｃ为８８～９０Ｋ。     

射频溅射法在CeO2/YSZ/Y2O3/NiW衬底上制备YBCO超导层

用射频溅射的方法在强立方织构的CeO2/YSZ/Y2O3/NiW衬底上制备了YBCO超导层. 温度、气压等因素对超导层的外延生长有重要影响. 在基片温度大于780 ℃, 气压在11～160 Pa之间, 都有NiWO4化合物生成;在退火吸氧过程中, 金属基底被氧化. 最终在温度780 ℃, 气压100 Pa的条件下, 制备出了纯（00l）取向的YBCO薄膜, 其平面内φ扫描半高宽小于10°, 超导转变温度为87.2 K, 传导电流为11 A.     

Fabrication of NiO Buffer Layer for YBCO Coated Conductors by Combining Sputtering and SOE Method

In research of YBCO coated conductors, the development of a oxide template for epitaxial growth of YBCO is very important. Matsumoto et al have demonstrated the potential of the surface oxidation epitaxial (SOE) route for formation a cube textured NiO layer on nickel tapes. The epitaxial NiO functions as a buffer layer of chemical reaction between YBCO and nickel, and as a template for the epitaxial growth of YBCO. However, the surface quality of NiO is difficult to control and defects such as crack, spall and deep grooves exist in SOE NiO layer. A new approach combining sputtering and SOE method to obtain crack-free and cube textured NiO layer were reported. Ni tapes prepared by the combination of rolling and recrystallization were used for this work. A coating of Ni was first deposited on the tapes via magnetron sputtering. Then on the coating tapes, continuous and textured NiO layer were achieved by SOE technology.     

Growth of CeO2, Y2O3 Buffer Layers for YBCO Coated Conductor

The liquid citrate method was used to synthesize perovskite-type SrCe0.9 Y0.1O3-α powder. SrCe09Y01O3-α membranes were prepared from the powder by sintering at 1450℃ for 10 h. The reactions in the process of the heat treatment were studied by XRD and DSC/TG. The microstructure of the powder and the membrane was observed by SEM. The results indicate that the perovskite-type SrCe0.9Y0.1 O3-α can be synthesized at 1100℃. The particle size of the synthesized SrCe0.9Y0.1O3-α powder is less than 1μm. The powder can be densified at 1450℃.     

Growth of CeO_2, Y_2O_3 Buffer Layers for YBCO Coated Conductor

~~Growth of CeO_2, Y_2O_3 Buffer Layers for YBCO Coated Conductor     

第二代YBCO超导带材的主要制备方法与研究现状

介绍了第二代超导带材基底与YBCO涂层的多种制备方法.详述了离子束辅助沉积IBAD,压延辅助基底RABiTS,倾斜基底沉积ISD等基底制备技术以及金属有机物沉积MOD,低成本电泳沉积等YBCO涂层制备技术.列举了国际上各机构第二代YBCO超导带材的研究和发展现状.     

磁控溅射法在立方织构镍基底上制备CeO2缓冲层

论述了具有立方织构的金属镍基底上 ,采用射频磁控溅射的方法制备CeO2 缓冲层。以Ar/H2 混合气体作为溅射气体 ,有效地抑制了NiO的形成 ,获得纯c轴取向的CeO2 薄膜。X射线 φ扫描、ω扫描和极图的测试分析表明 ,CeO2 薄膜在平面内和垂直于膜面方向晶粒都是有序排列的 ,具有良好的立方织构。     

Study on Epitaxial YBa_2Cu_3O_（7－x） Thin Film Deposited on （1120） Sapphire with YSZ Buffer Layer

ＳｔｕｄｙｏｎＥｐｉｔａｘｉａｌＹＢａ_２Ｃｕ_３Ｏ_（７－ｘ）ＴｈｉｎＦｉｌｍＤｅｐｏｓｉｔｅｄｏｎ（１１2０）ＳａｐｐｈｉｒｅｗｉｔｈＹＳＺＢｕｆｆｅｒＬａｙｅｒＬｉｕＡｎｓｈｅｎｇ（刘安生），ＳｈａｏＢｅｉｌｉｎｇ（邵贝羚），ＣｈｅｎＬａｎｆｅｎｇ...     

水基凝胶注YSZ固体电解质薄膜干燥过程研究

用水基凝胶注法制备出YSZ固体电解质薄膜，研究了温度、湿度和坯体厚度对干燥过程的影响规律。结果表明温度和湿度对干燥失重速率的影响比坯体厚度的影响大，温度越高，湿度越小，坯体厚度越小，YSZ薄膜失重速率越大。同时利用物理机制对干燥过程进行了解释，验证了YSZ薄膜的干燥过程分为明显的三个阶段，而且第一阶段干燥速率明显高于第二、第三阶段的干燥速率，第三阶段干燥速率受外界条件影响相对较小。对于厚度为O．1mm的YSZ薄膜，选择40℃和RH=60％的干燥工艺，效果最佳。     

Preparation and Superconductivity of Ho-Substituted YBCO Thin Films

ＳｉｎｃｅｔｈｅｄｉｓｃｏｖｅｒｙｏｆｈｉｇｈＴｃｓｕｐｅｒｃｏｎｄｕｃｔｏｒｓ，ｔｈｅｓｔｕｄｙｏｆｈｉｇｈＴｃｓｕｐｅｒｃｏｎｄｕｃｔｉｎｇｆｉｌｍｓｈａｓｂｅｃｏｍｅｏｎｅｏｆｔｈｅｍｏｓｔｉｍｐｏｒｔａｎｔａｒｅａｓｉｎｔｈｅｆｉｅｌｄｏ...     

Effect of Rare Earth Metals on Microstructure of Directional Solidified Al－3Li Alloy

ＥｆｆｅｃｔｏｆＲａｒｅＥａｒｔｈＭｅｔａｌｓｏｎＭｉｃｒｏｓｔｒｕｃｔｕｒｅｏｆＤｉｒｅｃｔｉｏｎａｌＳｏｌｉｄｉｆｉｅｄＡｌ－３ＬｉＡｌｌｏｙ￥ＷａｎｇＬｉ－Ｍｉｎ；ＤａｎｇＰｉｎｇ；ＤｕＦｕ－Ｙｉｎｇ；ＺｈａｏＭｉｎ－Ｓｈｏｕ（Ｃｈａｎｇｃｈｕ...     

Recrystallization Texture and Microstructure of Metal Substrate for Y123 Coated Superconductor

Thesecondgenerationofhigh temperaturesuper conductingtapesusingYBCO 12 3superconductorhavebeenanattractivesubjectinrecentyears .IncomparisonwithBibasedsuperconductors ,YBCOshowsbetterirreversibility ,lowAClosscapabilityandhighcriticalcurrentdensityJC inhighmagneticfields[1] .However ,owingtoitspropertyofphysicalmetallurgy ,YBCOtapescannotbeproducedbyOPIT(OxidePowderinTube)technique ,whichhasbeenusedinBibasedsuperconductorsuccessfully[2 ] .Fur thermore ,poorintergrainbondinginpolycrys…     

Effect of Rare Earth on theFormation of Liquid ZincCorrosion ResistantChromium-carbide Layer

Effect of Rare Earth on theFormation of Liquid ZincCorrosion ResistantChromium-carbide Layer     

Effects of Buffer Layer on Hetero-Epi-Growth of SiCGe on 6H-SiC

Growth of SiCGe ternary alloy on 6H-SiC in a conventional hot-wall CVD system was initially studied. SiH4, GeH4 and C3H8 were employed as silicon, germanium and carbon source, respectively, while H2 was employed as the carrier gas. To reduce the heavy lattice mismatch between the film and the substrate, a 3C-SiC buffer layer was inserted between them in a CVD process. Optimizing the growth conditions was discussed. The samples were measured by means of SEM, SAXRD (Small Angle X-Ray Diffraction). It is shown that use of the 3C-SiC buffer layer is an effective way to improve the quality of the ternary alloy.     

反应溅射法在蓝宝石衬底上制备CeO2缓冲层

用金属铈作为靶材,采用射频反应磁控溅射法在（1 102）蓝宝石衬底上制备C轴取向CeO2外延薄膜缓冲层。结果表明在温度低于450℃或溅射功率低于50 W的条件下CeO2薄膜呈（111）取向生长;升高温度和功率CeO2薄膜的（111）取向减弱,（002）取向增强;在温度高于750℃或溅射功率高于120 W条件下CeO2薄膜呈（111）取向和（002）取向混合生长。结合X射线衍射仪和原子力显微镜表征CeO2薄膜的结构和表面形貌,获得在最优化条件下（衬底温度在680℃左右,溅射功率在80 W左右,溅射气压在25 Pa,氩氧比在15∶1）制备的CeO2薄膜具有优良的面内面外取向和平整的表面。