Influence of sintering temperature on microstructures and dielectric properties of ZnO-MgO-TiO<Subscript>2</Subscript>-CaO ceramics

Microwave dielectric properties of ZnO–MgO–TiO₂–CaO (ZMTC) ceramics were investigated as a function of sintering temperatures by the conventional solid-state method. Sintering characteristics, microstructures, and microwave dielectric properties of ZMTC ceramics were studied as a function of sintering temperature from 1210 to 1290 °C. The variation trend of ε_r and Q? value was in accordance with variation trend of relative density. With increasing sintering temperature, the density, ε_r and Q? values increased, saturating at 1230 °C with excellent microwave properties of ε_r = 22.5, Q? = 22.1 × 10⁴ GHz, and TCF = 23.1 ppm/°C.     

Low-temperature sintering and microwave dielectric properties of MgTiO<Subscript>3</Subscript> ceramics

The effects of CuO–Bi₂O₃–V₂O₅ additions on the sintering temperature and the microwave dielectric properties of MgTiO₃ ceramics were investigated systematically. The CuO–Bi₂O₃–V₂O₅ (CuBiV) addition significantly lowered the densification temperature of MgTiO₃ ceramics from 1400 °C to about 900 °C, which is due to the formation of the liquid-phase of BiVO₄ and Cu₃(VO₄)₂ during sintering. The saturated dielectric constant (ε_r) increased, the maximum quality factor (Qf) values decreased and the temperature coefficient of resonant frequency (τ_f) shifted to a negative value with the increasing CuBiV content, which is mainly attributed to the increase of the second phase BiVO₄. MgTiO₃ ceramics with 6 wt.% CuBiV addition sintered at 900 °C for 2 h have the excellent microwave dielectric properties: ε _r= 18.1, Qf = 20300 GHz and τ_f = −57 ppm/ °C.     

Low temperature sintering and microwave dielectric properties of Li<Subscript>3</Subscript>Mg<Subscript>2</Subscript>NbO<Subscript>6</Subscript> ceramics for LTCC application

The Li₃Mg₂NbO₆ ceramics doped with ZnO-B₂O₃-SiO₂ (ZBS) additives were synthesized via the conventional solid-state reaction process. The influence of ZBS additives on phase composition, sintering behavior, microstructure and microwave dielectric properties of Li₃Mg₂NbO₆ ceramics were investigated in detail. The XRD patterns showed that the sintered specimen presented a single phase and no secondary phase appeared. We found that proper amount of ZBS additives could significantly reduce the sintering temperature from 1250 to 925?°C and promote the densification of Li₃Mg₂NbO₆ ceramics. The ε_r and Q?×?f value were strongly affected by bulk density and grain size, respectively. As ZBS content increased, the τ_f value shifted toward negative direction. In summary, excellent microwave dielectric properties of ε_r?~?14.84, Q?×?f?~?73,987 GHz, τ_f?~??16.05 ppm/°C could be obtained in 0.5 wt.% ZBS modified sample when sintered at 925?°C for 4 h. Furthermore, the material was compatible with Ag electrode, demonstrating that it would be a promising candidate material for LTCC application.     

Low temperature sintering and dielectric properties of Ba<Subscript>3</Subscript>(VO<Subscript>4</Subscript>)<Subscript>2</Subscript> microwave ceramics using Co<Subscript>2</Subscript>O<Subscript>3</Subscript> additives

The Ba₃(VO₄)₂–x wt% Co₂O₃ (x?=?0.5–5) ceramics were prepared by the solid state reaction method in order to reduce the sintering temperature. The effects of the Co₂O₃ additions on the phase composition, microstructures, sintering characteristics and microwave dielectric properties of Ba₃(VO₄)₂ ceramics are investigated by an X-ray diffractometer, a scanning electron microscope and a network analyzer. As a result, the Q?×?f value of 54,000 GH, the ε _r of 14.6 and the τ_f value of +58.5 ppm/°C were obtained in the sample of the Ba₃(VO₄)₂–3 wt% Co₂O₃ ceramic sintered at the temperature of 925 °C, which is capable to co-fire with electrode metal of high conductivity such as Ag (961 °C). Moreover, the Q?×?f values of the sample with Co₂O₃ higher than that of 3 wt% additions decreased because of the formation of Ba₂V₂O₇ phase.     

Effects of LiF addition on the sintering behavior and microwave dielectric properties of Li<Subscript>2</Subscript>Mg<Subscript>3</Subscript>SnO<Subscript>6</Subscript> ceramics

Li₂Mg₃SnO₆ (abbreviation for LMS) ceramics doped with 1–4 wt% lithium fluoride (LiF) were prepared by the conventional solid-state reaction method. The effects of LiF addition on the phase compositions, sintering behaviors and microwave dielectric properties of LMS ceramics were investigated. A small amount of LiF addition could effectively decrease the sintering temperatures due to the liquid phase in the sintering process and induced no apparent degradation of the microwave dielectric properties. The optimized quality factor values for each composition firstly increased and then decreased with the increase of the LiF content. Whereas, the optimized dielectric permittivity increased with increasing of the LiF content. Distinguished microwave dielectric properties with a dielectric constant (ε _r) of 11.13, a quality factor (Q·f) of 104,750 GHz, and a temperature coefficient of resonant frequency (τ _f ) of ?10.83 ppm/°C were obtained for LMS ceramics sintered at 950?°C doped with 3 wt% LiF, which showed that the materials were suitable for the low temperature co-fired ceramics applications (LTCC).     

Effects of Al<Subscript>2</Subscript>O<Subscript>3</Subscript> additive on sintering behavior and microwave dielectric properties of ZnTa<Subscript>2</Subscript>O<Subscript>6</Subscript> ceramics

ZnTa₂O₆ ceramics with various amount of Al₂O₃ additive were synthesized by a conventional mixed-oxide route. The grain growth of ZnTa₂O₆ ceramics was accelerated with Al₂O₃ additive. However, excessive addition (>1.0 wt%) of Al₂O₃ leaded to abnormal grain growth. With Al₂O₃ addition, the Al₂O₃ additive did not solubilized into ZnTa₂O₆ structure but resulted in forming the second phase. The Al₂O₃ addition resulted in the lower sintering temperature of ZnTa₂O₆ ceramics and improved microwave dielectric properties. The dielectric constant (ε_r) of the samples did not change much and ranged from 32.41 to 34.33 with different amount of Al₂O₃ addition. The optimized quality factor (Q × f) was higher than 70,000 GHz as a result of the denser ceramics. The temperature coefficient of resonant frequency (τ _f ) of the doped ZnTa₂O₆ ceramics could be optimized to near-zero.     

Effects of Gd doping on the sintering and microwave dielectric properties of BiNbO<Subscript>4</Subscript> ceramics

Gd³⁺ was chosen as a substitute for Bi³⁺ in BiNbO₄ ceramics, and the substitution effects on the sintering performance and microwave dielectric properties were studied in this paper. The high temperature triclinic phase was observed only in the Bi_0.98Gd_0.02NbO₄ ceramics when sintered at 920 °C. Both bulk densities and dielectric constant (ε_r) increased with the sintering temperature, while decreased with the Gd content. The quality factor (Q) exhibited a correlation to the Gd content and the microstructures of Bi_1−x Gd _x NbO₄ ceramics. At the sintering temperature of 900 °C, Bi_0.992Gd_0.008NbO₄ ceramics exhibited microwave dielectric properties of ε_r ∼ 43.87, Q × f ∼ 16,852 GHz (at 4.3 GHz), and its temperature coefficient of resonant frequency (τ_f) was found to be near-to-zero.     

Low temperature sintering and microwave dielectric properties of Zn<Subscript>3</Subscript>Mo<Subscript>2</Subscript>O<Subscript>9</Subscript> ceramic

Crystal structure and dielectric properties of Zn₃Mo₂O₉ ceramics prepared through a conventional solid-state reaction method were characterized. XRD and Raman analysis revealed that the Zn₃Mo₂O₉ crystallized in a monoclinic crystal structure and reminded stable up to1020 °C. Dense ceramics with high relative density (~ 92.3%) were obtained when sintered at 1000 °C and possessed good microwave dielectric properties with a relative permittivity (ε _r ) of 8.7, a quality factor (Q?×?f) of 23,400 GHz, and a negative temperature coefficient of resonance frequency (τ _f ) of around ??79 ppm/°C. With 5 wt% B₂O₃ addition, the sintering temperature of Zn₃Mo₂O₉ ceramic was successfully lowered to 900 °C and microwave dielectric properties with ε _r ?=?11.8, Q?×?f?=?20,000 GHz, and τ _f = ??79.5 ppm/°C were achieved.     

Effect of sintering temperature and time on microwave dielectric properties of CaNb2O6 ceramics

The microwave dielectric properties of CaNb₂O₆ ceramics were investigated with a view to their application in mobile communication. The CaNb₂O₆ ceramics were prepared by the conventional solid-state method with various sintering temperatures and sintering times. A maximum density of 4.67 g/cm³ was obtained for CaNb₂O₆ ceramic, sintered at 1,400 °C for 4 h. Dielectric constants (ε _r ) of 13.3–18.1 and quality factor (Q × f) of 12,200–50,000 GHz were obtained at sintering temperatures in the range 1,300–1,500 °C for 4 h. Dielectric constants (ε _r ) of 18.0–18.1 and quality factor (Q × f) of 44,300–50,000 GHz were obtained for sintering times in the range 2–6 h at a sintering temperature of 1,400 °C. A dielectric constant (ε _r ) of 18.1, a quality factor (Q × f) of 50,000 GHz, and a temperature coefficient of resonant frequency (τ _f ) of ?54 ppm/°C were obtained when CaNb₂O₆ ceramics were sintered at 1,400 °C for 4 h.     

Low-temperature sintering and microwave dielectric properties of Mg<Subscript>3</Subscript>B<Subscript>2</Subscript>O<Subscript>6</Subscript>-LMZBS composites

The Mg₃B₂O₆ ceramics with lithium magnesium zinc borosilicate (LMZBS) glass were prepared at a lower sintering temperature. The effects of the glass addition on the densification, phase development, microstructure and microwave dielectric properties of the Mg₃B₂O₆ ceramics were investigated. The addition of LMZBS glass improved the densification and lowered the sintering temperature of Mg₃B₂O₆ ceramics from 1,300 to 950 °C. X-ray diffraction patterns showed that Mg₃B₂O₆ transformed into Mg₂B₂O₅ and a new phase, Li₂ZnSiO₄, crystallized from the glass phase. Because of the high dielectric performance of these phases, Mg₃B₂O₆ mixed with 55 wt% LMZBS sintered at 950 °C for 3 h had ε_r = 6.8, Q × f = 50,000 GHz, and τ_f = ?64 ppm/°C at 7.28 GHz. The chemical compatibility of ceramic-glass composites with Ag was also investigated for LTCC.     

Low temperature sintering and microwave dielectric properties of Li<Subscript>6</Subscript>Mg<Subscript>7</Subscript>Ti<Subscript>3</Subscript>O<Subscript>16</Subscript> ceramics with LiF additive for LTCC applications

Li₆Mg₇Ti₃O₁₆ ceramics were prepared by the conventional solid-state method with 1–5 wt% LiF as the sintering aid. Effects of LiF additions on the phase compositions, sintering characteristics, micro-structures and microwave dielectric properties of Li₆Mg₇Ti₃O₁₆ ceramics were investigated. The LiF addition could effectively lower the sintering temperature of Li₆Mg₇Ti₃O₁₆ ceramics from 1550 to 900 °C. For different LiF-doped compositions, the optimum dielectric permittivity (ε _r ) and quality factor (Q·f) values first increased and then decreased with the increase of LiF contents, whereas the temperature coefficient of resonant frequency (τ _f ) fluctuated between ??14.39 and ??8.21 ppm/°C. Typically, Li₆Mg₇Ti₃O₁₆ ceramics with 4 wt% LiF sintered at 900 °C exhibited excellent microwave dielectric properties of ε _r ?=?16.17, Q·f?=?80,921 GHz and τ _f ?=???8.21 ppm/°C, which are promising materials for the low temperature co-fired ceramics applications.     

Low temperature sintering and microwave dielectric properties of MgNb2O6 ceramics

The effects of co-doped CuO and B₂O₃ addition on the sintering temperature, microstructure and microwave dielectric properties of MgNb₂O₆ ceramics prepared with conventional solid-state route were investigated. When both CuO and B₂O₃ were added, the MgNb₂O₆ ceramics were not only sintered at 1000 °C but also improved the Qf value. MgNb₂O₆ ceramics can be well sintered to approach to 98.1% theoretical density with 2.0 wt.% CuO–B₂O₃ additive due to its liquid phase effect. With 2.0 wt.% CuO–B₂O₃, a dielectric constant of 21.5, a Qf value of 108,000(GHz) and a τ _f value of −44 ppm/°C of MgNb₂O₆ ceramics doped with CuO–B₂O₃ sintered at 1050 °C for 2 h are obtained. The variation of ε _r, Qf and τ _f were also explained based on the difference in microstructures.     

Low-temperature sintering and microwave dielectric properties of TiO<Subscript>2</Subscript>-based LTCC materials

Temperature stable high-K LTCC material was prepared. The influence of fabrication process on the crystalline phases, microstructures and microwave dielectric properties of TiO₂-Bi₂O₃-CuO ceramics were investigated. The crystalline phases and microstructures of TiO₂-Bi₂O₃-CuO ceramics were investigated by X-ray diffraction, scanning electron microscopy and energy dispersive X-ray spectroscopy. It was found that rutile TiO₂ phase and Bi₂Ti₄O₁₁ phase co-existed in the TiO₂-Bi₂O₃-CuO ceramics. Separate TiO₂ grains and Bi₂Ti₄O₁₁ grains distributed uniformly in the ceramic matrix. The composition 0.92TiO₂-0.08Bi₂Ti₄O₁₁ with 2 wt% CuO addition that was sintered at 900 °C for 2 h showed high dielectric constant (ε_r ~ 81), high quality factor (Q × f ~ 3,500 GHz) and near zero temperature coefficient of resonant frequency (τ_f ~ −5.1 ppm/°C), meanwhile the compatibility test showed that it could co-fire with silver electrode. The processing-microstructure-property interrelationship was also studied.     

Structure and microwave dielectric properties of ZnTa<Subscript>2</Subscript>O<Subscript>6</Subscript> ceramics with TiO<Subscript>2</Subscript> and ZrO<Subscript>2</Subscript> additions

Ceramic samples based on ZnTa2O₆ and ZnTa₂O₆–MO₂ (M = Ti, Zr) systems have been obtained by the solid state ceramic route. The phase composition and microstructure of samples were investigated. The effect of the aliovalent substitution of ions Zn²⁺ and Ta⁵⁺ by M⁴⁺ (M = Ti, Zr) in the structure of ZnTa₂O₆ on microwave dielectric properties of ceramics was studied. The way of the compensation of the positive temperature coefficient of resonant frequency of dielectric resonators based on ZnTa₂O₆ ceramics with using the aliovalent substitution of cations was proposed. Dielectric resonators with the high temperature stability of the resonant frequency and high dielectric properties in the microwave range based on the ZnTa₂O₆–ZrO₂ system were obtained for application in electronics.     

Preparation and characterization of ZrB<Subscript>2</Subscript>-SiC ultra-high temperature ceramics by microwave sintering

ZrB₂-SiC ultra-high temperature ceramic composites reinforced by nano-SiC whiskers and SiC particles were prepared by microwave sintering at 1850°C. XRD and SEM techniques were used to characterize the sintered samples. It was found that microwave sintering can promote the densification of the composites at lower temperatures. The addition of SiC also improved the densification of ZrB₂-SiC composites and almost fully dense ZrB₂-SiC composites were obtained when the amount of SiC increased up to 30vol.%. Flexural strength and fracture toughness of the ZrB₂-SiC composites were also enhanced; the maximum strength and toughness reached 625 MPa and 7.18 MPa·m^1/2, respectively.     

Optimized sintering properties and temperature stability of MgZrTa<Subscript>2</Subscript>O<Subscript>8</Subscript> ceramics with CuO addition for microwave application

Microwave dielectric ceramics CuO–modified MgZrTa₂O₈ were synthesized by the conventional solid-state reaction method. The effects of CuO additives on the sintering characteristics and microwave dielectric properties have been investigated. With CuO addition, the sintering temperature of MgZrTa₂O₈ ceramics can be effectively lowered from 1475 to 1375 °C without decreasing its dielectric properties obviously and the temperature coefficient of the resonant frequency of MgZrTa₂O₈ ceramics have been optimized to near-zero. The crystalline phase exhibited a wolframite crystal structure and no second phase was detected at low addition levels. The grain growth of CuO–modified MgZrTa₂O₈ ceramics was accelerated due to liquid phase effect. The relative dielectric constants (ε_r) were correlated with apparent density and were not significantly different for all levels of CuO concentration. The quality factors (Q?×??) and temperature coefficient of resonant frequency (τ_?), which were strongly dependent on the CuO concentration, were analyzed by the grain size and the dielectric constant respectively. A best Q?×?? value of 116400 GHz and τ_? value of ?6.19 ppm/℃ were obtained for specimen with 0.05 wt% CuO addition at 1375 °C.     

Structural and dielectric properties of Bi doped Ba<Subscript>0.6</Subscript>Sr<Subscript>0.4</Subscript>TiO<Subscript>3</Subscript> ceramics

The dielectric properties of 0.1–15% mol bismuth doped Ba_0.6Sr_0.4TiO₃ (BST) ceramics have been investigated systematically. The solubility limit of bismuth is determined as about 10 mol% by means of both X-ray diffraction and scanning electron microscopy, which is further verified by the fact that the lattice constant of the samples above 10 mol% is almost invariable. The temperature dependence of the dielectric permittivity suggest that the ferroelectric behavior transit to relaxor ferroelectric type when impurity concentration reaches 5 mol%, and further to relaxor behavior for samples above 10 mol% Bi content, which is verified by the absence of a hysteresis loop. Thermal expansion results show differences between 5 and 10 mol% doped samples. Dielectric tunability at room temperature decreases with bismuth content increasing. The variation of properties was attributed to the impurity induced polar regions and former long-order structure.