使用基团理论计算KB5O8·4H2O晶体的倍频系数

本文使用基团理论计算KB₅O₈·4HO₂O(简称KB5)晶体的倍频系数,得到d₃₁=2.61×10^-10esu,d₃₂=007×10^-10esu,d₃₃=3.26×10^-10esu,与实验值符合较好。计算结果表明:氢键对KB5晶体的倍频系数有影响。本文还分析了KB5晶体倍频系数小的起因,除去[B₅O₆(OH)₄]^-1基团的微观倍频系数小外,还在于基团的空间排列方式不利,导至最大的微观倍频系数X₁₂₃相互抵消。最后,本文提出了在含四配位硼原子的硼氧化合物中寻找倍频新材料的结构判据。 关键词：     

Na2SbF5晶体倍频系数的理论计算

本文使用阴离子基团理论计算了Na₂SbF₅晶体的倍频系数,得到d₁₂₃=4.48×10^-10esu,与实验值符合较好。计算结果表明,阴离子基团中孤对电子的存在有利于产生大的倍频效应。本文还分析了Na₂SbF₅晶体倍频系数小的原因:尽管(SbF₅)^2-基团存在孤对电子可以对晶体倍频系数有较大贡献,但孤对电子能级的相对位置对其倍频系数有不利影响,从而导致它的倍频系数d₁₂₃较小。 关键词：     

一种测量切向压电常数d15的新方法

本文提出了测量压电材料切向压电常数d₁₅的一种新方法—准静态法。有限元仿真分析表明了测量原理的正确性。方法利用设计产生切向力的专用夹具,在普通的准静态d₃₃仪上,就可方便,快捷,准确地测量大多数压电材料的切向压电常数d₁₅。     

临界厚度d0和纵场临界电流曲线

本简报对理想第二类超导平板的纵场临界电流曲线进行的分析表明了,当平板厚度d大于临界厚度d₀时,曲线呈倒U字形;当d小于d₀时,曲线呈现出峰值效应。 关键词：     

d(x2-y2)+idxy混合波正常金属/绝缘层/超导体结中的隧道谱

考虑界面粗糙散射,在Blonder-Tinkham-Klapwijk(BTK)理论框架下,通过求解Bogoliubov-de-Gennes(BdG)方程,分别计算T=0K和有限温度下,d_(x²-y²)+id_xy混合波正常金属绝缘层超导体结中的准粒子输运系数和隧道谱.研究表明:隧道谱中的电导峰的劈裂程度强烈地依赖于d_xy波分量的强度、超导体的晶轴方位和界面粗糙强度,而温度的升高能压低电导峰. 关键词： NIS结 (x²-y²)+id_xy混合波超导体')" href="#">d_(x²-y²)+id_xy混合波超导体 隧道谱     

Ga1-xAlxAs光学声子形变势研究

本文用LMTO-ASA能带技术结合新的虚晶近似处理方法和冻结声子模型,计算了三元合金Ga_1-xAl_xAs Γ点的光学声子形变势(ODP)do及A轴上ODP的d₃₀,d₁₀(val)和d₁₀(cond),预言了它们作为Al组分x的函数关系,发现这些ODP都可用x的二次方程表示,其中d₀随x增加而减小的弯曲参数很小,是近乎线性的,理论预言了x≈0.65处d₁₀关键词：     

铁电晶体PbxBa1-xNb2O6和掺Li,Na的PbxBa1-xNb2O6的结构和电弹张量的测定

用提拉法从熔体中生长出Pb_0.37Ba_0.63Nb₂O₆和Pb_0.30Ba_0.533Na_0.306Li_0.028Nb₂O₆两种铁电单晶。用X射线衍射方法分析了两种单晶的结构,结果表明,室温时两种晶体都属于四方晶系点群4mm。测定晶格参数得PBN晶体的a=12.493?和c=3.98?;掺Li,Na的PBN晶体的a=12.493?和c=3.970?。测定了两种晶体全部各52个电弹张量的分量,结果表明PBN晶体具有优良的压电性,其中压电系数d₁₅=108×10^-12C/N。这种晶体很有希望用作与厚度切变模式有关的压电换能器材料。掺Li,Na的PBN晶体的介电常数显著降低,而铁电居里点有明显的提高。 关键词：     

隐埋“月牙”形InGaAsP/InP激光器动态特性研究

本文用计算机模拟方法分析了隐埋“月牙”形InGaAsP/InP激光器的动态特性,得到阈值电流,单模截止条件与有源区厚度(中心)d₀、沟宽W、条宽s、腔长L和材料的电阻率R_x等结构参数间的关系。在模拟分析的基础上,提供了阈值电流与结构参数间的近似表示式,从中能简捷地估算激光器的物理特性。文内还提出了注入载流子浓度高斯分布模型,应用这模型,可准确地计算电流扩展和增益分布,且导出了最大增益g_max,阈值电流密度J_th,模增益G_th,最佳有源区(中心)厚度d_0,min,最佳阈值电流密度J_th,min等一系列解析式。基于上述分析,该激光器最佳设计参数为d₀=0.15—0.2μm,W=2—4μm,s=10—15μm,L=200μm。 关键词：     

Li2K(IO3)3与Li2NH4(IO3)3的晶体结构

本文用X射线粉末法测定了Li₂K(IO₃)₃与Li₂NH₄(IO₃)₃的晶体结构和原子参数。发现Li₃K(IO₃)₃,Li₂NH₄(IO₃)₃与Li₂Rb(IO₃)₃同晶型,属单斜晶系,空间群为P2₁/α,每个单胞含有四个化合式量。室温的点阵常数分别为α=11.198?,b=11.046?,c=8.254?,β=111.53°,及α=11.327?,b=11.078?,c=8.341?,β=111.87°。讨论了二元化合物的形成与离子半径的关系。 关键词：     

非晶态Fe13Ni67.2P4.5B15.3合金的临界现象

本文报道非晶态Fe₁₃Ni_67.2P_4.5B_15.3合金的磁化强度与温度和磁场关系的测量结果。在居里温度附近样品的磁特性符合二级相变规律,得到临界指数β=0.39±0.02,γ=1.56±0.06,δ=5.20±0.1,样品的居里温度T_c=(180.4±0.2)K。在实验误差范围内,临界指数β,γ,δ满足γ=β(δ-1)关系,在168—192K温度范围,实验数据满足二级相变的磁状态方程。当T>270K时,样品顺磁磁化率服从居里-外斯定律,由居里-外斯常数c计算出有效顺磁磁矩P_eff=3.19 μ_B。 关键词：     

铁电单晶0.62Pb(Mg1/3Nb2/3)O3-0.38PbTiO3折射率的研究

用最小偏向角法在20℃下精确测量了0.62Pb(Mg_1/3Nb_2/3)O_{3< /sub>-0.38PbTiO3( 0.62PMN-0.38PT)单晶的折射率，给出了该温度下折射率色散的Sellmeier方程.研究了能带 结构与折射率的关系，计算了样品的Sellmeier光学系数：对no，E0=5.50eV,λ0=0.2 26μm，Ｓ０=1.004×10¹⁴m^-2，Ed=28.1 0eV；对ne，Ｅ0=5.57eV,λ 0=0.223μm，S0=1.017×10¹⁴m^-2，Ed=28.10eV.A BO3型钙钛矿材料中，BO6八面体基元决定了晶体的能带结构，对折 射率产生重要影响. 关键词： PMNT单晶 折射率 Sellmeier光学系数}     

Pressure dependence of the superconducting transition temperature of a (Mo0.6Ru0.4)86B14 metallic glass

We have studied the pressure dependence of the superconducting transition temperature of amorphous (Mo_0.6Ru_0.4)₈₆B₁₄ for hydrostatic pressures up to P ～ 9 kbar. The transition temperature T_c decreases with pressure at a rate dT_c/dP=-(9±1) mK kbar^-1. We estimate the Grüneisen parameter and the volume dependence of the electron-phonon coupling constant.     

199Hg+光频标的黑体辐射频移

光学频率标准会受到环境温度的黑体辐射影响发生频移,进而影响其准确度. 本文估算了¹⁹⁹Hg⁺的超精细能级5d¹⁰6s²S_1/2 (F=0)和5d⁹6s^{2 2}D_5/2 (F=2)的极化率,得到了室温(300 K)下黑体辐射引起的相对频移为-5.4×10^-17, 最后讨论了低温环境下黑体辐射对¹⁹⁹Hg⁺光频标的影响.     

Influence of pressure on the inhomogeneous mixed-valent state in Eu3S4

The 21.7 keV nuclear gamma resonance of ¹⁵¹Eu was used for studying the inhomogeneous mixed-valent compound Eu₃S₄ in the pressure range 0–15 kbar. At room temperature the activation energy for electron hopping between the crystallographically equivalent divalent and trivalent Eu sites was found to decrease with pressure by dE_a/dP=-1.8±0.3 meV kbar^-1. No change of the mean valence of Eu with pressure was observed.     

Electromechanical and ferroelectric properties of (Bi1/2Na1/2)TiO3-(Bi1/2K1/2)TiO3- (Bi1/2Li1/2)TiO3-BaTiO3 lead-free piezoelectric ceramics for accelerometer application

Lead-free (0.90-x)(Bi_1/2Na_1/2)TiO₃-0.05(Bi_1/2K_1/2)TiO₃-x(Bi_1/2Li_1/2)TiO₃-0.05BaTiO₃ piezoelectric ceramics (abbreviated as BNKLBT-100x, with x ranged from 0 to 2.5 mol %) were prepared by a conventional mixed oxide method. Effects of the amount of (Bi_1/2Li_1/2)TiO₃ (BLT) on the electrical properties and crystal structure of the BNKLBT ceramics were examined. BNKLBT-1.5 ceramics have good properties with piezoelectric constant d₃₃=163 pC/N, electromechanical coupling factor k_p=0.33, k_t=0.53, relative permittivity ε_r=785 and dissipation factor cosδ=2.2% at 1 kHz. The sample has larger remnant polarization than BNKLBT-0 ceramics and the same coercive field as BNKLBT-0 ceramics. X-ray diffraction analysis shows that the incorporated BLT diffuses into the BNT–BKT–BT lattice to form a solid solution during sintering, but changes the crystal structure from rhombohedral to tetragonal symmetry at higher BLT amounts. Depolarization temperature (T_d) of the BNKLBT-100x ceramics increases from 102 °C to ∼136 °C for BNKLBT-0 to BNKLBT-2.5. BNKLBT-1.5 is used as the transduction element in compressive type accelerometer and its sensitivity is calibrated by the back-to back method. Within the ±2.5% tolerance, the lead-free accelerometer has a mean value of 2.97 pC/ms^-2 within 50 Hz–12.45 kHz and the lead-based accelerometer has a mean value of 4.34 pC/ms^-2 within 50 Hz to 8.24 kHz. PACS 77.22.Ej; 77.84.-s; 85.50.-n     

Luminescence study of the 4f5d configuration of Nd in LiYF4, LiLuF4 and BaY2F8 crystals

Ultraviolet fluorescence of Nd³⁺ ions induced by triphotonic excitation process was studied in Nd-doped LiYF₄, LiLuF₄ and BaY₂F₈ crystals using a technique of time-resolved spectroscopy. The observed ultraviolet luminescence was due to transitions between the bottom of 4f²5d configuration and 4f³ states of Nd³⁺ ions. Narrow emission lines superposed to the broadband emissions were observed. A detailed analysis of luminescence spectrum revealed that the narrow emissions are due to parity and spin allowed radiative transitions from the Stark levels of ⁴K_11/2(5d) state created by the electrostatic interaction between the 5d electron and the two electrons of the 4f² configuration. The narrow emissions are related to the high spin state (S=3/2) which gives f-f characteristics to the f-d broadband emissions. The narrow emissions superposed to the wide emission correspond to 18%, 34% and 43% of the integrated broadband emission at 262 nm observed in LiYF₄, LiLuF₄ and BaY₂F₈ crystals, respectively. Although the 5d-4f² interaction is observed to be weaker than 5d-crystal field interaction, it is stronger enough to select only the radiative transitions from 4f²5d configuration to 4f³ states that preserves the total spin S=3/2.     

Na0.5K0.5NbO3-BiFeO3 lead-free piezoelectric ceramics

Lead-free (Na_0.5K_0.5)NbO₃-based piezoelectric ceramics were successfully fabricated by substituting with a small amount of BiFeO₃ (BF). Difficulty in sintering of pure NKN ceramics can be eased by adding a few molar percent of BF, and the crystalline structure is also changed, leading to a morphotropic phase boundary (MPB) between ferroelectric orthorhombic and rhombohedral phases. The MPB exists near the 1-2 mol% BF-substituted NKN compositions, exhibiting enhanced ferroelectric, piezoelectric, and electromechanical properties of P_r=23.3 μC/cm², d₃₃=185 pC/N, and k_p=46%, compared to an ordinarily sintered pure NKN ceramics. The MPB composition has a Curie temperature of ∼370 °C, comparable to that of some commercial PZT materials.     

K0.5Na0.5NbO3-LiSbO3-BiFeO3/CuFe2O4复合陶瓷的制备与磁电性能研究

采用传统的固相法制备了(1-x)(K_0.5Na_0.5NbO₃-LiSbO₃-BiFeO₃)-xCuFe₂O₄ (x=0.1, 0.2, 0.3, 0.4) 磁电复合陶瓷, 并借助X射线衍射仪、扫描电镜和磁电耦合系数测试仪等对复合陶瓷的微结构和性能进行了分析. 结果表明, 复合陶瓷的K_0.5Na_0.5NbO₃-LiSbO₃-BiFeO₃和CuFe₂O₄物相之间发生了一定的离子相互扩散作用, 且两相的颗粒大小匹配性较好. 随着CuFe₂O₄含量增加, 复合陶瓷的压电系数从130 pC/N减小到30 pC/N, 饱和磁致伸缩系数从4.5×10^-6增加到12.4×10^-6左右, 磁电耦合系数表现出先增加后减小, 在x=0.3时获得最大的磁电耦合系数9.4 mV·cm^-1·Oe^-1. 关键词： 0.5Na_0.5NbO₃-LiSbO₃-BiFeO₃')" href="#">K_0.5Na_0.5NbO₃-LiSbO₃-BiFeO₃ 2O₄')" href="#">CuFe₂O₄ 磁电耦合     

Superconductivity in porous MgB2

Porous magnesium diboride samples have been prepared by the heat treatment of a pressed mixture of Mg and MgB₂ powders. It was found that linked superconducting structure is formed down to the minimum normalized density γ_c=d/d₀≅0.16 (percolation threshold), where d is the density of MgB₂ averaged over the sample, d₀=2.62 g/cm³ is the X-ray density. Lattice parameters and critical temperature of the porous sample decrease with increasing porosity (decreasing γ) and T_c2≅32 K is minimal at γ_c. The grain boundaries in the porous samples are transparent for the current and J_c∼3×10⁵ A/cm² in self field at T=20 K in the samples with γ∼0.24.     

Refractive index, oscillator parameters and temperature-tuned energy band gap of Tl4In3GaS8-layered single crystals

Transmission and reflection measurements in the wavelength region 450-1100 nm were carried out on Tl₄In₃GaS₈-layered single crystals. The analysis of the room temperature absorption data revealed the presence of both optical indirect and direct transitions with band gap energies of 2.32 and 2.52 eV, respectively. The rate of change of the indirect band gap with temperature dE_gi/dT=-6.0×10⁻⁴ eV/K was determined from transmission measurements in the temperature range of 10-300 K. The absolute zero value of the band gap energy was obtained as E_gi(0)=2.44 eV. The dispersion of the refractive index is discussed in terms of the Wemple-DiDomenico single-effective-oscillator model. The refractive index dispersion parameters: oscillator energy, dispersion energy, oscillator strength and zero-frequency refractive index were found to be 4.87 eV, 26.77 eV, 8.48×10¹³ m⁻² and 2.55, respectively.