Pd-Si薄膜固相反应的透射电子显微镜研究

本工作利用透射电子显微术研究了Pd-Si薄膜固相反应的初始生成相及生成相Pd₂Si与(111)取向Si衬底的取向关系随Pd膜厚度、退火温度等因素的变化规律。实验结果表明:在衬底保持室温的条件下,Pd沉积到Si(111)上时也能够生成一层外延的Pd₂Si,其厚度足以在常规的选区电子衍射中产生明显的信号。在170℃退火时,Pd-Si反应即可持续到生成200nm厚的外延的Pd₂Si。在Pd膜厚度为400nm的条件下,Pd₂Si与Si(111)衬底的取向关系为[0001]_(Pd2Si)轴织构。 关键词：     

Low energy electron loss spectroscopic study of Pd-Si(111) system

Effect of Pd deposition on a clean Si(111) surface was studied by ELS and AES methods for submonolayer [1 ML = 7.8 × 10¹⁴atomscm^-2forSi(111)] to several tens of monolayers. ELS spectra showed that the electronic nature of Pd-Si bonding for ? 1 ML of Pd coverage is different from Pd₂Si formed for ? 3 ML. Namely, it was shown that some critical thickness for Pd on Si(111) exist for inducing interfacial intermixing reaction at room temperature.     

Effect of NH3 adsorption on the atomic structure of Si(111) √3 × √3 - Al and Si(111) √3 × √3 - Ag surfaces

The room temperature (RT) adsorption of ammonia (NH₃) on Si(111)√3 × √3-Al and Si(111)√3 × √3-Ag surfaces has been studied using LEED and AES. The transformation from Si(111)√3 × √3-Al surface structure to Si(111)1 × 1-(Al, H) upon NH₃ exposure has been found to be similar to the previously observed structural transformation induced by exposure in the atomic hydrogen. It has been demonstrated that the transformation is caused by hydrogen atoms which are generated by NH₃ dissociation on the Si(111)√3 × √3-Al surface. It has been estimated that about 0.1 ML of ammonia molecules is needed to complete the structural transformation. No interaction of NH₃ with the Si(111)√3 × √3-Ag surface has been found. The dissociation of NH₃ molecules is believed to be impossible on this surface     

Pd adsorption on Si(1 1 3) surface: STM and XPS study

Pd-induced surface structures on Si(1 1 3) have been studied by scanning tunneling microscopy (STM) and X-ray photoelectron spectroscopy (XPS). In the initial process of the Pd adsorption below 0.10 ML, Pd silicide (Pd₂Si) clusters are observed to form randomly on the surface. By increasing the Pd coverage to 0.10 ML, the clusters cover the entire surface, and an amorphous layer is formed. After annealing the Si(1 1 3)-Pd surface at 600 °C, various types of islands and chain protrusions appears. The agglomeration, coalescence and crystallization of these islands are observed by using high temperature (HT-) STM. It is also found by XPS that the islands correspond to Pd₂Si structure. On the basis of these results, evolution of Pd-induced structures at high temperatures is in detail discussed.     

The Formation of Pd Nanocrystals from Pd2(dba)3 Microcrystals

As‐grown platelets formed from tris‐(dibenzylideneacetone) dipalladium(0) [Pd₂(dba)₃] precursor in the presence of Pd17 RNA are investigated before and after thermal annealing. Results show that as‐grown platelets are disordered crystals of Pd₂(dba)₃ containing 1?2 nm Pd clusters and platelets grown in the absence of RNA are morphologically and structurally similar to those formed with RNA. The initially formed crystals are so sensitive to environmental variables that the degree of crystallinity can not be determined accurately by electron diffraction. X‐ray crystallography on as‐grown platelets gives a crystal structure consistent with Pd₂(dba)₃, but reveals a composition of ≈Pd_1.07(dba)₃, indicating one Pd atom in Pd₂(dba)₃ is lost from the structure. Both electron beam and thermally induced decomposition of as‐grown Pd₂(dba)₃ platelets having a hexagonal habit on the micrometer scale produces elemental Pd platelets having a hexagonal habit on the nanometer scale. These hexagonal platelets are composed of a partially sparse form of Pd₂(dba)₃ that is initially crystalline but rapidly degrades due to the loss of Pd atoms from organic ligand cages. Once released, Pd atoms aggregate to form Pd clusters, which grow and transform into well‐formed Pd nanocrystals under electron‐beam irradiation or through thermal annealing.     

Observation of Si(111) and gold-deposited Si(111) surfaces using micro-probe reflection high-energy electron diffraction

Observations of clean Si(111) and gold-deposited Si(111) surfaces have been performed using micro-probe reflection high-energy electron diffraction. It was found that many atomic steps on a Si(111) surface run in nearly the same direction, about 9° off the [1̄1̄2] direction. When gold was deposited on this surface at a substrate temperature of about 800°C, 5 × 1, diffuse √3 × √3R30°, sharp √3 × √3 R30° structures and Au clusters appeared on the surface with continuation of the deposition. During the deposition process, it was found that one kind of Si(111) 5 × 1 Au domain grew selectively along these atomic steps and nearly covered the entire surface. A phenomenon of gold clusters moving during the deposition was also observed. These clusters all moved in nearly the same direction so as to climb the atomic steps.     

Adsorption of hydrogen on palladium single crystal surfaces

The adsorption of hydrogen on clean Pd(110) and Pd(111) surfaces as well as on a Pd(111) surface with regular step arrays was studied by means of LEED, thermal desorption spectroscopy and contact potential measurements. Absorption in the bulk plays an important role but could be separated from the surface processes. With Pd(110) an ordered 1 × 2 structure and with Pd(111) a 1 × 1 structure was formed. Maximum work function increases of 0.36, 0.18 and 0.23 eV were determined with Pd(110), Pd(111) and the stepped surface, respectively, this quantity being influenced only by adsorbed hydrogen under the chosen conditions. The adsorption isotherms derived from contact potential data revealed that at low coverages θ ∞ √p_H2, indicating atomic adsorption. Initial heats of H₂ adsorption of 24.4 kcal/mole for Pd(110) and of 20.8 kcal/mole for Pd(111) were derived, in both cases E_ad being constant up to at least half the saturation coverage. With the stepped surface the adsorption energies coincide with those for Pd(111) at medium coverages, but increase with decreasing coverage by about 3 kcal/mole. D₂ is adsorbed on Pd(110) with an initial adsorption energy of 22.8 kcal/mole.     

Study of Ag/Si(111) submonolayer interface: II. Atomic geometry of Si(111) (√3 × √3 )R30°-Ag surface

Final state diffraction of Ag 3d X-ray photoelectrons from the Si(111) (√3 × √3)R30°-Ag surface has been measured. From a kinematical analysis of the diffraction patterns, it is found that a buried honeycomb framework of Ag atoms is formed on the surface with lateral displacement of the first Si layer.     

Scanning tunneling microscopy observation of ultrathin epitaxial CoSi<Subscript>2</Subscript>(111) films grown at a high temperature

Scanning tunneling microscopy (STM) is used to study the basic laws of growth of ultrathin epitaxial CoSi₂(111) films with Co coverages up to 4 ML formed upon sequential deposition of Co and Si atoms taken in a stoichiometric ratio onto the Co–Si(111) surface at room temperature and subsequent annealing at 600–700°C. When the coverage of Co atoms is lower than ~2.7 ML, flat CoSi₂ islands up to ~3 nm high with surface structure 2 × 2 or 1 × 1 grow. It is shown that continuous epitaxial CoSi₂ films containing 3–4 triple Si–Co–Si layers grow provided precise control of deposition. CoSi₂ films can contain inclusions of the local regions with (2 × 1)Si reconstruction. At a temperature above 700°C, a multilevel CoSi₂ film with pinholes grows because of vertical growth caused by the difference between the free energies of the CoSi₂(111) and Si(111) surfaces. According to theoretical calculations, structures of A or B type with a coordination number of 8 of Co atoms are most favorable for the CoSi₂(111)2 × 2 interface.     

RHEED study of In-induced superstructures on Ge(111) surfaces

When submonolayer and monolayer amounts of indium were deposited onto clean Ge(111) surfaces at room temperature and then heated, (13 × 2√3), (12 × 2√3), (11 × 2√3), (10 × 2√3), (4√3 × 4√3) R30°-related, (√31 × √31) R(±9°), (√61 × √61) R(30 ± 4°) and (4.3 × 4.3) structures appeared on the surfaces at fixed In coverages and at fixed surface temperatures. General intensity features of superlattice reflections are derived from intensity estimations by eye of superlattice spots in their RHEED patterns, and some structural characteristics of the superstructures are clarified from the analysis of the general intensity features. The former four superstructures are long-period (2 × 2)-related antiphase structures whose period changes, depending on the coverage. The wavevector characterizing the (13 × 2√3) structure, which appears at the smallest coverage, almost coincides with those of structural fluctuation emerging at the clean Ge(111) (1 × 1) surface around 350°C. The coincidence suggests that the longperiod (2 × 2)-related antiphase structures have a close relationship to the structural fluctuation and, besides, to the (2 × 8) structure in their origin.     

Adsorption-desorption properties and surface structural chemistry of chlorine on Cu(111) and Ag(111)

The adsorption, desorption, and structural properties of chlorine adlayers on Cu(111) and Ag(111) have been studied by LEED, Auger, Δ?, and thermal desorption measurements. Ancillary experiments were also carried out on cuprous chloride for purposes of comparison with the Cu(111)-Cl data. Chlorine adsorption is rapid on both metals and follows precursor kinetics, the absolute initial sticking probabilities being ~1.0 (Cu) and ~0.5 (Ag). Δ? results suggest that significant depolarisation of the chemisorption bond occurs at high coverages, the maximum values being + 1.2 eV (Cu) and + 1.8 eV (Ag). On Cu(111), adsorption leads to the formation of a sequence of well-ordered phases; in order of increasing coverage, these are as follows: (√3 × √3)R30°, (12√3 × 12√3)R30°, (4√7 × 4√7)R19.2°, and (6√3 × 6√3)R30°. On Ag(111) (√3 × √3)R30°, and (10 × 10) structures are observed. All six structures are susceptible to a straightforward interpretation in terms of coincidence lattices resulting from the progressive uniform compression of a hexagonal layer of Cl atoms. This interpretation is consistent with all the experimental results, and gives values for the nearest-neighbour ClCl spacing on both Cu(111) and Ag(111) which are in good agreement with other work on other surfaces. Chlorine desorbs exclusively as atoms from both metals with first-order desorption kinetics, and apparent desorption energies of 236 (Cu) and 209 (Ag) kJ mol^?1. These values, which depend on an assumed pre-exponential factor of 10¹³ s^?1, are shown to be inconsistent with the thermochemical constraints on the system necessitated by the complete absence of Cl₂ desorption. Lower limits for the pre-exponential factors are then deduced, and the values are found to be consistent with the differences between the CuCl and AgCl systems.     

Low-energy electron diffraction,Auger electron spectroscopy,and thermal desorption studies of chemisorbed CO and O2 on the (111) and stepped [6(111) × (100)] iridium surfaces

The adsorption of CO, O₂, and H₂O was studied on both the (111) and [6(111) × (100)] crystal faces of iridium. The techniques used were LEED, AES, and thermal desorption. Marked differences were found in surface structures and heats of adsorption on these crystal faces. Oxygen is adsorbed in a single bonding state on the (111) face. On the stepped iridium surface an additional bonding state with a higher heat of adsorption was detected which can be attributed to oxygen adsorbed at steps. On both (111) and stepped iridium crystal faces the adsorption of oxygen at room temperature produced a (2 × 1) surface structure. Two surface structures were found for CO adsorbed on Ir(111); a (√3 × √3)R30° at an exposure of 1.5–2.5 L and a (2√3 × 2√3)R30° at higher coverage. No indication for ordering of adsorbed CO was found on the Ir(S)-[6(111) × (100)] surface. No significant differences in thermal desorption spectra of CO were found on these two faces. H₂O is not adsorbed at 300 K on either iridium crystal face. The reaction of CO with O₂ was studied on Ir(111) and the results are discussed. The influence of steps on the adsorption behaviour of CO and O₂ on iridium and the correlation with the results found previously on the same platinum crystal faces are discussed.     

Leed,aes and photoemission measurements of epitaxially grown GaAs(001), (111)A and (1̄1̄1̄)B surfaces and their behaviour upon cs adsorption

Epitaxially grown GaAs(001), (111) and (1?1?1?) surfaces and their behaviour on Cs adsorption are studied by LEED, AES and photoemission. Upon heat treatment the clean GaAs(001) surface shows all the structures of the As-stabilized to the Ga-stabilized surface. By careful annealing it is also possible to obtain the As-stabilized surface from the Ga-stabilized surface, which must be due to the diffusion of As from the bulk to the surface. The As-stabilized surface can be recovered from the Ga-stabilized surface by treating the surface at 400°C in an AsH₃ atmosphere. The Cs coverage of all these surfaces is linear with the dosage and shows a sharp breakpoint at 5.3 × 10¹⁴ atoms cm^?2. The photoemission reaches a maximum precisely at the dosage of this break point for the GaAs(001) and GaAs(1?1?1?) surface, whereas for the GaAs(111) surface the maximum in the photoemission is reached at a higher dosage of 6.5 × 10¹⁴ atoms cm^?2. The maximum photoemission from all surfaces is in the order of 50μA Im^?1 for white light (T = 2850 K). LEED measurements show that Cs adsorbs as an amorphous layer on these surfaces at room temperature. Heat treatment of the Cs-activated GaAs (001) surface shows a stability region of 4.7 × 10¹⁴ atoms cm^?2 at 260dgC and one of 2.7 × 10¹⁴ atoms cm^?2 at 340°C without any ordering of the Cs atoms. Heat treatment of the Cs-activated GaAs(111) crystal shows a gradual desorption of Cs up to a coverage of 1 × 10¹⁴ atoms cm^?2, which is stable at 360°C and where LEED shows the formation of the GaAs(111) (√7 × √7)Cs structure. Heat treatment of the Cs-activated GaAs(1?1?1?) crystal shows a stability region at 260°C with a coverage of 3.8 × 10¹⁴ atoms cm^?2 with ordering of the Cs atoms in a GaAs(1?1?1?) (4 × 4)Cs structure and at 340°C a further stability region with a coverage of 1 × 10¹⁴ at cm^?2 with the formation of a GaAs(1?1?1?) (√21 × √21)Cs structure. Possible models of the GaAs(1?1?1?) (4 × 4)Cs, GaAs(1?1?1?)(√21 × √21)Cs and GaAs(111) (√7 × √7)Cs structures are given.     

Exchanges between Si and Pb adatoms on Si(111)

Real-time observation by high-temperature scanning tunneling microscopy of exchanges between Si and Pb atoms on a Si(111)-√3 × √3 surface is reported. The exchange rate is obtained as a function of the temperature. The activation energy of the exchange is about 1.2 eV, and the prefactor, shown to depend on the Pb coverage, is from 2 × 10¹⁰ to 8 × 10¹¹ s⁻¹. This prefactor is much larger than that for the exchange between Pb and Ge adatoms on a Ge(111)-c(2 × 8) surface, indicating that the adatom arrangement greatly influences the exchange mechanism. We also report that metastable 9 × 9 reconstruction appears during Pb desorption.     

Formation of nanosize silicides films on the Si(111) and Si(100) surfaces by low-energy ion implantation

The formation of nanosize silicides films by implantation of B, P, Ba, and alkali metal atoms in Si(111) and Si(100) followed by thermal annealing is studied by electron spectroscopy and slow-electron diffraction methods. It is shown that implantation of ions with a large dose D > 10¹⁶ cm^?2 and short-term heating lead to the formation of thin silicides films with new surface superstructures: \(Si(111) - (\sqrt 3 \times \sqrt 3 )R30^ \circ - B\) , Si(100)-2 × 2Ba, Si(111)-1 × 1P, etc.     

Ga- and As-Adatom phases on the Ge(111) and Si(111) surfaces: analogies and differences

The (1 × 1) and (√3 × √3)R30° (T4) structures of Ga and As adatoms on the Ge(111) and Si(111) surfaces are studied using first-principles calculations. The surface energetics predicts, in some cases, a transformation of the T4 structure (surface covered with 1/3 monolayer (ML) of adatoms) into domains of the 1-ML covered (1 × 1) structure and areas of clean reconstructed suface. For As adatoms, such phase separation is favored on both substrates, while for Ga adatoms, it is only preferred on the Ge(111) surfaces. These results compare well with experimental observations.     

A new method of surface structure-analysis by medium energy electron diffraction: distinction between T4 and H3 models for the Si(111)√3 × √3 -In surface

A new method (named GB-MEED) of medium-energy electron diffraction has been invented. This method is used to measure back-scattering medium-energy electron diffraction patterns with a grazing-incident electron beam. It is demonstrated that GB-MEED is sensitive to the structural change of only a few upper layers of the Si(111) surface. A simple model of single-scattering cluster calculation similar to that for X-ray photoelectron diffraction has been applied to analyze presently measured GB-MEED patterns for the Si(111)√3 × √3-In surface. The distinction between T₄ and H₃ models for the Si(111)-√3 × √3-In surface has been made by making the best use of forward focusing of electron-scattering at a medium energy of 1 keV.     

A single crystal study of the initial stages of silver sulphidation: The chemisorption and reactivity of molecular sulphur (S2) on Ag(111)

Molecular sulphur undergoes rapid dissociative chemisorption on Ag(111) with an essentially constant sticking probability of unity up to the completion of the first layer of S atoms. At this stage a $\text{(√39 R 16.1° × √39}\text{R}\text{?}\text{16.1°)}$ structure is formed in which the S atom arrangement and spacing is similar to that in the (100) plane of γ-Ag₂S (the high temperature form of silver sulphide). Further dosing with S₂ leads to continued rapid uptake of sulphur and the appearance of a (√7 × √7) R 10.9° structure, the Auger, Δφ and thermal desorption data all indicate that fast formation of Ag₂S now occurs. Very well-ordered growth of γ-Ag₂S(111) is now observed, and low-temperature S₂ desorption spectra appear which show that the activation energy for S₂ desorption is ~175 kJ mol^?1 ; this value is in excellent agreement with that observed for the enthalpy of decomposition of bulk Ag₂S (2 Ag₂S(s) → 4 Ag(s) + S₂(g), ΔH = +179 kJmol^?1). All the properties of the Ag(111)-S system imply that the material characterised by the √39 structure (i.e. the first adsorbed layer of S) is very different from bulk Ag₂S. This is discussed and compared with the results of other studies on metal-sulphur systems.     

Effect of impurities on the surface morphology of Fe(111)

The surface composition and morphology of Fe(111) have been examined through a combined analysis that includes low-energy electron diffraction (LEED), Auger electron spectroscopy (AES), and scanning tunneling microscopy (STM). The preferential segregation of sulfur has been clearly identified by AES upon annealing. The STM images exhibit numerous triangular pits of various sizes, and the LEED patterns show diffused n × 1 spots. The triangular pits reveal a Sierpinski gasket fractal. For sulfur-free Fe(111), nitrogen segregates to the surface upon annealing, forming a 4√3 × 4√3 superstructure that is identified by LEED patterns and STM images. The STM images show nanoscale triangular clusters regularly aligned in a hexagonal 4√3 × 4√3 configuration. Ultra-thin chromium film deposited on a nitrogen-segregated Fe(111) surface with post-annealing induces further nitrogen segregation, resulting in the formation of triangular pyramid-shaped CrN nanoclusters.     

Cu/SiO2/Si(111)体系中Cu和Si的扩散及界面反应

室温下利用磁控溅射在p型Si(111)衬底上沉积了Cu薄膜. 利用X射线衍射和卢瑟福背散射分别对未退火以及在不同温度点退火后样品的结构进行了表征. 在此基础上，研究了Cu/SiO₂/Si(111)体系的扩散和界面反应. 实验结果表明：当退火温度高于450℃时出现明显的扩散现象，并且随着温度的升高，体系扩散现象会更加显著. 当退火温度低于450℃时没有铜硅化合物生成，当温度达到500℃时才有铜硅化合物生成. 关键词： 薄膜 扩散 界面反应 硅化物