A red oxide phosphor, Sr2ScAlO5:Eu2+ with perovskite-type structure, for white light-emitting diodes

Sr2ScAlO5:Eu2+,a red oxide phosphor with a perovskite-type structure,has been synthesized through a solid-state reaction and its luminescence properties have been investigated.An absorption band centering at 450 nm is observed from the diffuse reflection spectra and the excitation spectra,indicating that the phosphor can match perfectly with the blue light of InGaN light-emitting diodes.A broad red emission band at 620 nm is found from the emission spectra,originating from the 4f 6 5d-4f 7 transition of the Eu 2+ ions.The best doping content of Eu in this material is about 5%.Sr2ScAlO5:Eu2+is a highly promising red phosphor for use in white light-emitting diodes.     

Photoluminescence characteristics and energy transfer between Bi~（3＋） and Eu~（3＋） in Na_2O–CaO–GeO_2–SiO_2 glass

We report the photoluminescence（PL） of Eu^3＋-doped glass with Bi^3＋as a sensitizer. The specific glass system with the strong enhancement of the red emission of Eu3＋is obtained by adding a small number of Bi3＋ions instead of increasing the Eu^3＋ concentration. The emission band of Bi3＋overlaps with the excitation band of Eu^3＋ and the lifetime decay curves,resulting in a very efficient energy transfer from Bi^3＋ to Eu^3＋. The probability of energy transfer is strongly dependent on Bi^3＋ concentration. In addition, the intensity of 4f–4f transition is much stronger than that of a charge-transfer（CT） band in the excitation spectrum, which indicates that the Na2O–Ca O–Ge O2-Si O2 glass is a suitable red-emitting phosphor with high stability as a candidate for light-emitting diodes（LEDs）.     

Blue-to-Orange Tunable Luminescence from Europium Doped Yttrium--Silicon--Oxide--Nitride Phosphors

Europium-doped yttrium-silicon-oxide-nitride phosphors are synthesized by carbothermal reduction and nitridation method. The crystal structure of the phosphors changed gradually from oxide Y2Si2O7 to nitride YSi3N5 state with increasing dosage of Si3N4 and carbon powder. The Y2Si2O7：Eu phosphor shows a blue emission at 465 nm with 300 nm excitation and a characteristic red emission of Eu^3＋ at 612 nm with 230 nm excitation. The YSi3N5：EU phosphor shows a broad emission band centred at 595nm with some sharp peaks of Eu^3＋ with 325nm excitation. The absorption of the studied phosphors increases from 450 to 700hm with an increment in nitrogen content. Blue-to-orange tunable luminescence is observed with 390 nm excitation.     

Preparation and luminescence characteristics of Eu^2＋ activated silicate phosphor

This paper synthesizes the Sr2SiO4：Eu^2＋ phosphor by high temperature solid-state reaction. The emission spectrum of Sr2SiO4 ： Eu^2＋ shows two bands centred at 480 and 547 nm, which agree well with the calculation values of emission spectrum, and the location of yellow emission of Sr2SiO4 ： Eu^2＋ is influenced by the Eu^2＋ concentration. The excitation spectrum for 547 nm emission has two bands at 363 and 402 nm. The emission spectrum of white light emitting diodes （w-LEDs） based on Sr2SiO4 ： Eu^2＋ phosphor ＋ InGaN LED was investigated.     

Sr3Bi（PO4）3：Eu^2＋ Luminescence,Concentration Quenching and Crystallographic Sites

A blue emitting phosphor Sr3Bi（PO4）3：Eu2＋ is synthesized luminescent property is investigated. Sr3Bi（PO4 ）3 ：Eu^2＋ can by a high-temperature solid state method, and its create blue emission under the 332 radiation excitation, and the prominent luminescence in blue （423nm） due to the 4fSd^1→4f^7 transition of the Eu^2＋ ion. The crystallographic sites of the Eu^2＋ ion in Sr3Bi（PO4）3 are analyzed, and the 420 and 440 nm emission peaks of the Eu^2＋ ion are assigned to the nine-coordination and eight-coordination, respectively. The emission intensity of Sr3Bi（PO4）3：Eu^2＋ is influenced by the Eu^2＋ doping content, and the concentration quenching effect is observed. The quenching mechanism is the dipole-dipole interaction, and the critical distance of energy transfer is calculated by the concentration quenching method to be approximately 1.72nm.     

Preparation and Luminescence Characteristics of Ca3Y2（BO3）4：Eu^3＋ Phosphor

Ca3Y2 （BO3）4：Eu^3＋ phosphor is synthesized by high temperature solid-state reaction method, and the Iuminescence characteristics are investigated. The emission spectrum exhibits two strong red emissions at 613 and 621 nm corresponding to the electric dipole ^5 Do- ^7F2 transition of Eu^3＋ under 365 nm excitation, the reason is that Eu^3＋ substituting for Y^3＋ occupies the non-centrosymmetric position in the crystal structure of Ca3 Y2 （BO3）4. The excitation spectrum for 613 nm indicates that the phosphor can be effectively excited by ultraviolet （UV） （254 nm, 365nm and 400nm） and blue （470nm） light. The effect of Eu^3＋ concentration on the emission intensity of Ca3 Y2 （BO3）4 ：Eu^3＋ phosphor is measured, the result shows that the emission intensities increase with increasing Eu^3＋ concentration, then decrease. The CIE colour coordinates of Ca3Y2 （BO3）4：Eu^3＋ phosphor is （0.639, 0.357） at 15mol% Eu^3＋.     

VUV/UV/X-Ray Excited Luminescent Properties of Eu^3＋ and Pr^3＋ Doped BiSbO4

Absorption spectra of BiSbO4 are studied. The electronic structure calculated by the DFT shows that BiSbO4 is a semiconductor, with direct band gap 2.96 eV, which is consistent with UV-visible diffuse reflectance experiment. The host lattice emission band is located at 440 nm under VUV excitation. Eu^3＋ and Pr^3＋ doped samples have high luminescence efficiency in emitting red and green light, respectively. From the partial density of states, Eu^3＋ doped emitting spectrum, and the host crystal structure parameters, the relationship between structure and optical properties is discussed. It is found that the Eu^3＋ ions occupied Bi^3＋ sites, and there could be an energy transfer from Bi^3＋ ions to RE^3＋ ions.     

Energy transfer relation of a novel Ce3＋/Pr3＋/Eu3＋ co-doped Sr2.975-xLaxAIO4＋xF1-x solid solution phosphor

The photoluminescence properties and energy transfer of a new Ce3＋/pr3＋/Eu3＋ co-doped solid-solution composi- tion of Sr2.975-xLaxAlO4＋xF1-x （LSAF） phosphor are investigated. Upon doping Pr3＋ into lattices of LSAF：Ce host, a shoulder emission peak is observed at about 620 nm, owing to the transition of 1D2 →3H4. Addition of Eu3＋ to LSAF：Ce3＋, Pr3＋ phosphor results in a sharp emission peaked at 675 nm for the 5D0 →TF3 transition and an increase of the intensity of red emission for Pr3＋ with increasing Eu3＋ concentration. The pathways of energy transfer among Ce3＋, Pr3＋, and Eu3＋ are proposed to be responsible for color addition of a red component to the primary yellow emission, enabling a potential adjustable color for blue excitable warm white.     

Luminescent Characteristics of LiSrBO3：Eu3＋ Phosphor for White Light Emitting Diode

LiSrBO3 ：Eu3＋ phosphor is synthesized by a high solid-state reaction method, and its luminescent characteristics are investigated. The emission and excitation spectra of LiSrBO3：Eu3＋ phosphors exhibit that the phosphors can be effectively excited by near ultraviolet （401 nm） and blue （471 nm） light, and emit 615nm red light. The effect of Eua＋ concentration on the emission spectrum of LiSrBO3：Eu3＋ phosphor is studied; the results show that the emission intensity increases with increasing Eu3＋ concentration, and then decreases because of concentration quenching. It reaches the maximum at 3mol%, and the concentration self-quenching mechanism is the dipoledipole interaction according to the Dexter theory. Under the conditions of charge compensation Li＋, Na＋ or K＋ incorporated in LiSrBO3, the luminescent intensities of LiSrBO3 ：Eua＋ phosphor are enhanced.     

White Emitting ZnS Nanocrystals： Synthesis and Spectrum Characterization

Spherical organic-bonded ZnS nanocrystals with 4.0 4-0.2 nm in diameter are synthesized by a liquid-solid-solution method. The photoluminescence spectrum of sample （[S^2-]/[Zn^2＋] = 1.0） shows a strong white emission with a peak at 490nm and - 170 nm full widths at half maximum. By Gauss fitting, the white emission is attributed to the overlap of a blue emission and a green-yellow emission, originating from electronic transitions from internal S^2- vacancies level to valence band and to the internal Zn^2＋ vacancy level, respectively. After sealingZnS nanocrystals onto InGaN chips, the device shows CIE coordinates of （0.29,0.30）, which indicates their potential applications for white light emitting diodes.     

Luminescence Spectra of YGG：RE^3＋, Bi^3＋ （RE = Eu and Tb） and Energy Transfer from Bi^3＋ to RE^3＋

We investigate the luminescence properties of Bi^3＋ and RE^3＋ （RE = Tb or Eu） in a Y3Ga5O12 （YGG） host system. The additional doping of Bi^3＋ can enhance the luminescence of Th^3＋ or Eu^3＋ in this host. Energy transfer from Bi^3＋ to Tb^3＋ and Eu^3＋ is observed and the mechanism of energy transfer is investigated. Mechanism of energy transfer can be explained as electric multipole interaction since the Bi^3＋ emission band and Tb^3＋ or Eu^3＋ excitation band overlaps and the Bi^3＋ emission intensity decreases while the intensity of Tb^3＋ or Eu^3＋ increases with the increase of Tb^3＋ or Eu^3＋ concentration. Therefore, Bi^3＋ ion is a kind of efficient sensitizer to the Tb^3＋ and Eu^3＋ activators in the Y3Ga5O12 host.     

Synthesis and characterization of Ca2Sn1-xCexO4 with blue luminescence originating from Ce^4＋ charge transfer transition

Ce^4＋-doped Ca2SnO4 with a one-dimensional structure, which emits bright blue light, is prepared by using a solid-state reaction method. The x-ray diffraction results show that the Ce^4＋ ions doped in Ca2SnO4 occupy the Sn^4＋ sites. The excitation and emission spectra of Ca2Sn1-xCexO4 appear to have broad bands with peaks at - 268nm and -442nm, respectively. A long excited-state lifetime （-83μs） for the emission from Ca2Sn1-xCexO4 suggests that the luminescence originates from a ligand-to-metal Ce^4＋ charge transfer （CT）. The luminescent properties of Ca2Snl_xCexO4 have been compared with those of Sr2CeO4, which is the only material reported so far to show Ce^4＋ CT luminescence. More interestingly, it is observed that the emission intensity of Ca2Sn1-xCexO4 with a small doping concentration （x - 0.03） is comparable to that of Sr2CeO4 in which the concentration of active centre is 100%.     

Temperature dependence of the luminescence properties of LaCl3：Ce crystal

The optical properties of LaCl3：Ce crystal are reported in this paper. Optical transmission spectrum, photoluminescence and time resolved photoluminescence spectra at different temperatures are investigated. It is found that optical transmittance is as high as 80% between 320 nm and 600 nm, and no obvious absorption band is found in this region. Emission intensity and decay time of photoluminescence are quite stable with the change of the temperature between 80 K and 500 K. No thermal quenching is present up to 500 K, and decay time keeps at 17±2 ns. With the increase of the temperature, the whole emission bands and excitation bands present broadening and overlapping, leading to the strengthening of re-absorption of the Ce^3＋ emission, which makes the emission spectra have a red shift trend.     

Luminescent Properties of Eu^3＋—Doped Yttrium Oxide Chloride Embedded in Nanoporous Glass

The photoluminescence of Eu^3 -doped yttrium oxide chloride embedded in nanoporous glass has been observed.In comparison with those in the powder phosphor,the emission lines of Eu^3 ions becom much broader and lueshift was observed in the lines due to ^5D0→^7F2 transitions and the Eu-O charge transfer excitation band.The ratio intensities of the ^5D0→^7F1 transitions to the ^5D0→^7F2 transitions of Eu^3 ion become higher and change at different excitation excitation wavelengths,such as 393nm and 254nm.The two excitation wavelengths belong to the 4f→4f transition of the Eu^3 ion and the Eu-O charge transfer,respectively,This material may be developed into a new luminescent glass.     

Effect of high-temperature annealing on AIN thin film grown by metalorganic chemical vapor deposition

The effect of high-temperature annealing on A1N thin film grown by metalorganic chemical vapor deposition was investigated using atomic force microscopy, Raman spectroscopy, and deep ultra-violet photoluminescence （PL） with the excitation wavelength as short as ~ 177 nm. Annealing experiments were carded out in either N2 or vacuum atmosphere with the annealing temperature ranging from 1200 ℃ to 1600 ℃. It is found that surface roughness reduced and compres- sive strain increased with the annealing temperature increasing in both annealing atmospheres. As to optical properties, a band-edge emission peak at 6.036 eV and a very broad emission band peaking at about 4.7 eV were observed in the photoluminescence spectrum of the as-grown sample. After annealing, the intensity of the band-edge emission peak varied with the annealing temperature and atmosphere. It is also found that a much stronger emission band ranging from 2.5 eV to 4.2 eV is superimposed on the original spectra by annealing in either N2 or vacuum atmosphere. We attribute these deep-level emission peaks to the VAL--ON complex in the A1N material.     

Synthesis and characterization of Sr3Al2O6：Eu2＋, Dy3＋ phosphors prepared by sol-gel-combustion processing

A type of red luminescent Sr3Al2O6:Eu2+, Dy3+ phosphor powder is synthesised by sol-gel-combustion processing, with metal nitrates used as the source of metal ions and citric acid as a chelating agent of metal ions. By tracing the formation process of the sol-gel, it is found that it is necessary to reduce the amount of NO3- by dropping ethanol into the solution for forming a stable and homogeneous sol-gel. Thermogravimetric and Differential Scanning Calorimeter Analysis, x-ray diffractionmeter, scanning electron microscopy and photoluminescence spectroscopy are used to investigate the luminescent properties of the as-synthesised Sr3Al2O6:Eu2+, Dy3+. The results reveal that the Sr3Al2O6 crystallises completely when the combustion ash is sintered at 1250 C. The excitation and the emission spectra indicate that the excitation broadband lies mainly in a visible range and the phosphors emit a strong light at 618 nm under the excitation of 472 nm. The afterglow of (Sr0.94Eu0.03Dy0.03)3Al2O6 phosphors sintered at 1250 ℃ lasts for over 1000 s when the excited source is cut off.     

Active Loss of Light Yield of PbWO4：Y Scintillation Crystals After Irradiation

PWO crystals doped with yttrium were grown with the Bridgman method in platinum crucible and by using an indigenously developed resistive heating furnace. After an exposure of γ-ray from a ^60Co source, with the dose rate of lS rad/h for 20h, the light output increases for about 15%, accompanied with vanishing of an optical absorption band at 420 nm. The excitation and emission spectra of PWO crystals were measured before and after irradiation with different dose rates. The optical absorption band at 420nm was also found in the PWO sample annealed in oxygen-rlch atmosphere. It is suggested that the absorption band at 42Onm is related to Pb^3 point defects existing in the PWO crystal. The unusual change of light output after irradiation probably results from the transformation of lead ions from Pb^3 to Pb^2 .     

Temperature Dependence of the Fluorescence Emission Intensity of Eu/TiO2 Nanocrystals

The samples of europium ions doped titanium dioxide （Eu^3＋/TiO2） nanocrystals are synthesized by a modified sol-gel method with hydrothermal treatment. The x-ray diffraction and scanning electron microscopy are used to characterize the sample. The temperature-dependent fluorescence emission effect of Eu^3＋-doped samples is investigated. It is found that under the excitation of 514.5nm light, the emission intensity of Eu^3＋ reaches a maximum value at 450K among various Eu^3＋ dopant concentrations in Eu^3＋ /TiO2 nanocrystals. The variation of the emission intensity may be attributed to the photon-assist absorption and the temperature-quenching effect.     

Improvement in electroluminescence performance of n-ZnO/Ga_2O_3 /p-GaN heterojunction light-emitting diodes

n-ZnO/p-GaN heterojunction light-emitting diodes with and without a Ga2O3 interlayer are fabricated. The electroluminescence （EL） spectrum of the n-ZnO/p-GaN displays a single blue emission at 430 nm originating from GaN, while the n-ZnO/Ga2O3/p-GaN exhibits a broad emission peak from ultraviolet to visible. The broadened EL spectra of n-ZnO/Ga2O3/p-GaN are probably ascribed to the radiative recombination in both the p-GaN and n-ZnO, due to the larger electron barrier （ΔEC=1.85 eV） at n-ZnO/Ga2O3 interface and the much smaller hole barrier （ΔEV=0.20 eV） at Ga2O3/p-GaN interface.     

Long-Lasting Phosphorescence Properties of Pyrochlore La2Ti2O7：Pr^3＋ Phosphor

The La2Ti2O7：Pr^3＋, which emits red color luminescence upon UV light excitation, is prepared by the conventional high-temperature solid-state method and its luminescent properties are systematically investigated. X-ray diffraction, photoluminescence, afterglow emission spectra and long-lasting phosphorescence （LLP） decay curves are used to characterize this phosphor. After irradiation by a 290-nm UV light for 3 rain, the Pr^3＋-doped La2Ti2O7 phosphor emits intense red emitting afterglow from the ^1D2 →^ 3H4 transitions, and its afterglow can be seen with the naked eye in the dark clearly for more than 1 h after removal of the excitation source. The afterglow decay curve of the Pr^3＋-doped La2Ti2O7 phosphor contains a fast decay component and another slow decay one. The possible mechanism of this red light emitting LLP phosphor is also discussed based on the experimental results.