Silica-Zirconia Sol–Gel Coatings Obtained by Different Synthesis Routes

Homogeneous xSiO₂-(1−x)ZrO₂ coatings have been prepared onto glass-slides, monocrystalline Si and stainless steel (AISI 304) using sols prepared via acid and basic catalysis. Zirconium tetrabutoxide (TBOZr), zirconium n-propoxide (TPZ), tetraethoxysilane (TEOS) and methyltriethoxysilane (MTES) were used as precursors of zirconia and silica, respectively. The different parameters involved in the synthesis procedure, as molar ratios H₂O/alkoxides, NaOH/alkoxides, and sintering temperature have been analysed, correlating the stability and rheological properties of the sols. The evolution and structure of the sols and coatings have been studied by FTIR. Coatings have been prepared by dipping from acid and basic sols. Electrophoretic Deposition (EPD) technique has also been used to prepare coatings onto stainless steel from basic particulate sols in order to increase the critical thickness. A maximum thickness of 0.5 μ m was reached by both dipping and EPD process for 75SiO₂: 25 ZrO₂ composition. The critical thickness decreases with ZrO₂ amount depending strongly of the drying conditions. Si–O–Zr bonds have been identified by FTIR, indicating the existence of mixed network Si–O–Zr in the coatings obtained by the different routes. Crystallisation of ZrO₂(t) was only observed at high sintering temperature (900^∘C) by FTIR and confirmed by DRX.     

Chemical solution processing and characterization of Ba(Zr,Ti)O<Subscript>3</Subscript>/LaNiO<Subscript>3</Subscript> layered thin films

Ba(Zr,Ti)O₃/LaNiO₃ layered thin films have been synthesized by chemical solution deposition (CSD) using metal-organic precursor solutions. Ba(Zr,Ti)O₃ thin films with smooth surface morphology and excellent dielectric properties were prepared on Pt/TiO _x /SiO₂/Si substrates by controlling the Zr/Ti ratios in Ba(Zr,Ti)O₃. Chemically derived LaNiO₃ thin films crystallized into the perovskite single phase and their conductivity was sufficiently high as a thin-film electrode. Ba(Zr,Ti)O₃/LaNiO₃ layered thin films of single phase perovskite were fabricated on SiO₂/Si and fused silica substrates. The dielectric constant of a Ba(Zr_0.2Ti_0.8)O₃ thin film prepared at 700°C on a LaNiO₃/fused silica substrate was found to be approximately 830 with a dielectric loss of 5% at 1 kHz and room temperature. Although the Ba(Zr_0.2Ti_0.8)O₃ thin film on the LaNiO₃/fused silica substrate showed a smaller dielectric constant than the Ba(Zr_0.2Ti_0.8)O₃ thin film on Pt/TiO _x /SiO₂/Si, small temperature dependence of dielectric constant was achieved over a wide temperature range. Furthermore, the fabrication of the Ba(Zr,Ti)O₃/LaNiO₃ films in alternate thin layers similar to a multilayer capacitor structure was performed by the same solution deposition process.     

Preparation and characterization of mesoporous silica thin films from polyethoxysiloxanes

Tetraethoxysilane (TEOS) and polyethoxysiloxanes (PEOSs; prepared by the acid‐catalyzed hydrolytic polycondensation of TEOS) were subjected to the sol–gel process in the presence of cetyltrimethylammonium bromide (CTAB), respectively. The PEOSs with M_w 700–26,000, as prepared by sol–gel coating of TEOS and PEOS under various conditions, were used. Uniform and crack‐free thin films of thickness 276–613 nm were prepared by spin‐coating of a PEOS solution containing CTAB. When the coating films were sintered at 400 °C, the combustion of ethoxy groups and CTAB took place to provide porous silica thin films. The structure of the thin films was found to be dependent on the molecular weight of PEOS and the molar ratio of CTAB/Si: lamellar or hexagonal phase was observed for M_w less than 15,000 and for CTAB/Si molar ratios greater than 0.10. Honeycomb structures were observed for M_w less than 5000 and for CTAB/Si molar ratios of 0.15. The honeycomb structure was also observed by atomic force microscopy and transmission electron microscope. © 2006 Wiley Periodicals, Inc. J Polym Sci Part A: Polym Chem 44: 2542–2550, 2006     

Site engineering in chemical-solution-deposited Bi<Subscript>3.25</Subscript>La<Subscript>0.75</Subscript>Ti<Subscript>3</Subscript>O<Subscript>12</Subscript> thin films using Ce,Zr, Mn and Si atoms

Ferroelectric Bi_3.25La_0.75Ti₃O₁₂ (BLT) thin films were fabricated by depositing sol-gel solutions on Pt(111)/Ti/SiO₂/Si (100) substrates. Crystallographic orientations of the BLT films were random, but the preferred orientations along (00l) and (117) axes were found. All films showed a single-phase bismuth-layered structure but the orientation in the films could be engineered by optimizing the growth condition, as well as by introducing dopant atoms such as Ce and Zr in the films, which in turn influenced the ferroelectric properties of the films significantly. The shape of c-axis-oriented grains was more plate-like, while that of (117)-oriented grains was rod-like. Small % substitution of Ce, Mn, and Zr atoms at Ti site enhanced the remanent polarization by approximately 20%, while substitution of Si atoms reduced the remanent polarization in BLT films but improved insulating properties. It was also demonstrated that fatigue endurance could be controlled by the concentration of dopant atoms, which was thought to be due to the decrease in oxygen vacancy concentration.     

Blends of poly(ethylene terephthalate) and cellulose

Poly(ethylene terephthalate) (PET) (intrinsic viscosity 0.59) and cellulose (Whatman) are compatible in up to 7.5% (w/v) solutions in trifluoroacetic acid and in mixtures of trifluoroacetic acid and methylene chloride. Evaporation of the solutions yielded films that did not contain cellulose per se, but rather partial esters of cellulose and trifluoroacetic acid. Clear films were cast from these solutions with compositions of 100/0, 75/25, 50/50, 25/75, and 0/100 PET. cellulose (w/w). Infrared spectra and DSC measurements indicate specific polymer-polymer interaction although two T_g were observed. Hydrolysis of the trifluoroacetate films to blends of PET and regenerated cellulose was accomplished by suspending the films in water at the boil. Infrared spectra indicate no interaction between the two polymers, although the films of the 50/50 and 25/75 PET. cellulose compositions were clear. The 25/75 composition, from its T_g and melting-point behavior appears to be a dispersion of very small-particle PET in a cellulose matrix. The 75/25 composition became opalescent during the hydrolysis and may be a dispersion of large-particle cellulose in a PET matrix. The regenerated cellulose appears to be a mixture of cellulose II and IV polymorphs.     

Use of γ-irradiation cross-linking to improve the water vapor permeability and the chemical stability of milk protein films

γ-irradiation was used to produce free-standing cross-linked milk proteins. Film forming solutions were prepared according to a method previously developed in our laboratory using calcium caseinate (cas) with various proportions of whey protein isolate (wpi) or whey protein concentrate (wpc). The following caseinate–whey protein (cas:wp) ratio were prepared: 100:0, 75:25, 50:50, 25:75, and 0:100. The WVP of the films was determined gravimetrically at 23°C using a modified ASTM procedure. Molecular properties characterization was performed by size exclusion chromatography (SEC). Results showed significant (p⩽0.05) reduction of the WVP of protein films for the following formulations: cas:wpi or cas:wpc (100:0); cas:wpi (25:75); cas:wpc (25:75); and cas:wpc (0:100). Mixture of cas and wpi produced a synergistic effect. The strongest combined effect was obtained for cas:wpi (25:75) formulation with permeability values of 2.07 and 1.38 g mm/m² d mm Hg for unirradiated and irradiated samples, respectively. γ-irradiation also induced a substantial increase of high molecular weight protein components in film forming solutions. The predominant fraction was ⩾10×10⁶ Da for irradiated film forming solutions, compared to less than 0.2×10⁶ Da for native unirradiated solutions.     

Preparation of Ba(Ti,Sn)O<Subscript>3</Subscript> thin films by PVP-assisted sol–gel method and their dielectric properties

Ba(Ti_1−x Sn _x )O₃ (x = 0.10 or 0.15) thin films were deposited on Si(100) and Pt(111)/TiO _x /SiO₂/Si(100) substrates via sol–gel spin-coating. Crack-free thin films could be obtained by single-step deposition, where the thickness was about 0.46 and 0.29 μm at 1000 and 2000 rpm, respectively. Circular delaminated parts 100 μm in diameter, however, tended to appear in thicker films deposited at 1000 rpm. On both kinds of substrates, the films were crystallized between 500 and 600 °C, where the perovskite phase emerged as the primary phase, and the formation of single-phase perovskite was basically achieved between 700–800 °C. The films deposited on Pt(111)/TiO _x /SiO₂/Si(100) substrates, however, tended to have small SnO₂ and BaCO₃ diffraction peaks, which decreased with increasing spinning rate. The dielectric properties were evaluated on the films deposited on Pt(111)/TiO _x /SiO₂/Si(100) substrates at 2000 rpm. The films prepared by single-step depositions had dielectric constants of 350 and 230, and dielectric loss of 0.30 and 0.10 at x = 0.1 and 0.15, respectively. The films prepared by two time deposition had dielectric constants of 450 and 250, and dielectric loss of 0.21 and 0.19 at x = 0.10 and 0.15, respectively.     

Characterization of a passivation layer comprising MgO?SiO2 and ZrO2

Thin films with magnesium oxide (MgO) and silicon oxide (SiO₂) compounds mixed at various mixture ratios were deposited on flexible polyether sulfone (PES) substrates by an e‐beam evaporator to investigate their potential for transparent barrier applications. In this study, as the MgO fraction increased, thin films comprising MgO and SiO₂ compounds became more amorphous, and their surface morphologies became smoother and denser. In addition, zirconium oxide (ZrO₂) was added to the above‐mentioned compound mixtures, and the properties of the compound mixture comprising Mg? Si? Zr? O were then measured. ZrO₂ made the thin mixture films more amorphous, and made the surface morphology denser and more uniform. Whole thin films of 250 ± 30 nm in thickness were formed, and their water vapor transmission rates (WVTRs) decreased rapidly. The best WVTR was obtained by depositing thin films of Mg? Si? Zr? O compound among the whole thin films. The WVTRs of the PES substrate in the bare state decreased from 47 to 0.8 g m^?2 day^?1. This Mg? Si? Zr? O compound was deposited on polyethylene terephtalate (PET) substrates again to confirm the availability of the compound mixture. Thin films on the PET substrates decreased the WVTRs remarkably from 2.96 to 0.01 g m^?2 day^?1. These results were similar to those of thin films on PES substrates. As the thin mixture films became more amorphous and surface morphology denser and more uniform, the WVTRs decreased. Therefore, the thin mixture films became more suitable for flexible organic light emitting displays (OLEDs) as transparent passivation layers against moisture in air. Copyright © 2006 John Wiley & Sons, Ltd.     

Structural control of oligomeric methyl silsesquioxane precursors and their thin‐film properties

Oligomeric methyl silsesquioxane (O‐MSSQ) precursors were prepared from methyl trimethoxysilane (MTMS) in a mixed solvent of methyl isobutyl ketone and tetrahydrofuran by variations in the pH and molar ratio of water to MTMS (R₁). The molecular structures of O‐MSSQ were controlled by the reaction conditions. At a fixed pH value, the percentage of the end group, Si? OCH₃, decreased with increasing R₁, but that of Si? OH increased. With the pH increasing, the ratio of Si? OCH₃ groups to Si? OH groups was enhanced, but ratio of the molecular weights was reduced. The molecular weight distribution was progressively broader as the pH value decreased. These results were explained by the effects of R₁ and pH on the hydrolysis and condensation reactions. The prepared O‐MSSQ precursors consisted of mixed cage and network structures. The ratio of cage structures to network structures increased at low pH and high R₁ values. Highly uniform thin films were spin‐coated from the O‐MSSQ precursors, and this was followed by multistep curing. The content of cage structures in O‐MSSQ films decreased with increasing curing temperatures, whereas the network content in O‐MSSQ films showed the opposite trend. Such a structural transformation resulted in significant variations in the physical properties. Both the refractive index and dielectric constant decreased with higher cage/network ratios because of changes in the molar volume. The prepared O‐MSSQ has potential applications as a low dielectric constant material. © 2002 Wiley Periodicals, Inc. J Polym Sci Part A: Polym Chem 40: 1560–1571, 2002     

Optical anisotropy of polymeric films measured by waveguide propagation mode determination

Extruded thin films of a liquid-crystalline charge-conjugated rigid-rod polymer poly(p-phenylenebenzobisthiazole), PBT, and a semicrystalline thermoplastic polyethylene-terephthalate (Mylar) were fabricated and examined for film thickness, refractive index, and linear attenuation coefficient. Optical waveguide modes were successfully induced on the polymeric films using a prism coupler at λ = 633 and 1300 nm. Highly consistent thickness values were obtained for the polymeric films. In addition, the anisotropic nature of the optical properties was determined using TE and TM propagation modes. A refractive index as high as 2.3 was observed on PBT film. The refractive index data suggested that the PBT and Mylar films were optically anisotropic with refractive indices n? (out-of-plane) invariably smaller than n∥ (in-plane). Large anisotropy was also discovered in the linear attenuation coefficient α, with α_∥/α_? ≈ 50 for the Mylar films. Complementary polarimetric and spectroscopic interference measurements were also applied to investigate the optical anisotropy of the extruded polymeric films. © 1992 John Wiley & Sons, Inc.     

High purity gadolinium by the electrolysis of GdF3

The anodic overvoltage on carbon and platinum electrodes in the electrochemical production of high purity gadolinium from molten 75 LiF-25 mol% GdF₃ solutions is discussed. At the cell temperature of 840°C calciumimpregnated anodes led to the reduction of inert electrode films and to a current yield of nearly 100%.The deposited gadolinium contained 75, 22, 54 and less than 100 ppm of the interstitial elements H, N, O and C respectively; the concentrations of the highest other analysed impurities were: Si (89), Fe (15), Y (5), Zr (3), Nd (3), Tb (71), Ta (49), W (23) and Re (<3 ppm).Partly performed at the Ames Laboratory—U.S. Department of Energy.     

Poly(methyl silsesquioxane)/amphiphilic block copolymer hybrids and their porous derivatives: Poly(styrene‐block‐acrylic acid) and poly(styrene‐block‐3‐trimethoxysilylpropyl methacrylate)

Porous poly(methyl silsesquioxane) (PMSSQ) films were prepared from PMSSQ/amphiphilic block copolymer (ABC) hybrids, and this was followed by spin coating and multistep baking. The ABCs were poly(styrene‐block‐acrylic acid) (PS‐b‐PAA) and poly(styrene‐block‐3‐trimethoxysilylpropyl methacrylate) (PS‐b‐PMSMA), which were synthesized by living polymerization. The chemical bonding between the ABCs and PMSSQ resulted in significant differences in the morphologies and properties of the hybrids and their porous derivatives. Both intramolecular and intermolecular hydrogen bonding existed in the PMSSQ/PS‐b‐PAA hybrid and led to macrophase separation. Through the modification of the chemical structure from the poly(acrylic acid) segment to PMSMA, covalent bonding between PMSSQ and PMSMA occurred and prevented the macrophase separation and initial pyrolysis of the ABC. Modulated differential scanning calorimetry results also suggested a significant difference in the miscibility of the two hybrid systems. The chemical bonding resulted in higher retardation of the symmetry‐to‐nonsymmetry Si? O? Si structural transformation for PMSSQ/PS‐b‐PMSMA than for PMSSQ/PS‐b‐PAA according to Fourier transform infrared studies. The pore size of the nanoporous thin film from the PMSSQ/PS‐b‐PMSMA hybrid was estimated by transmission electron microscopy to be less than 15 nm. The refractive index and dielectric constant of the prepared porous films decreased from 1.354 to 1.226 and from 2.603 to 1.843 as the PS‐b‐PMSMA loading increased from 0 to 50 wt %, respectively. This study suggests that chemical bonding in hybrid materials plays a significant role in the preparation of low‐dielectric‐constant nanoporous films. © 2004 Wiley Periodicals, Inc. J Polym Sci Part B: Polym Phys 42: 4466–4477, 2004     

Dielectric and piezoelectric properties of dense and porous PZT films prepared by sol-gel method

PZT films with different microstructure and Zr:Ti ratios were fabricated on ITO/glass and platinized silicon wafer substrates by dip-coating. A dense film of 2% porosity and a porous film of 19% porosity were obtained by repetition of thin and thick coatings, respectively. Development of pores during heating the film was examined and heating process factors were investigated. In the film fabricated on ITO/glass substrates, an existence of non-perovskite and low permittivity layer was confirmed by measurement of film thickness dependence of the dielectric constant. Among the films studied, the film with molar composition of Ti:Zr = 5:5 exhibited the largest dielectric constant and apparent piezoelectric coefficient, d ₃₃, though the values were small. Apparent piezoelectric coefficients of d ₃₃ and g ₃₃ of the porous films were larger than those of the dense films.     

Effect of preparation conditions on the optical and physical properties of an epoxy-functional inorganic-organic hybrid material system

A hybrid material system consisting of (3-glycidyloxypropyl)trimethoxysilane, dimethyldimethoxysilane and zirconium(IV) n-propoxide was prepared. The influence of processing parameters including Zr content, UV irradiation and sol ageing on the properties of the resultant thin films was discussed. Refractive index, at 633 nm, and reflectance measurements were performed and near-field waveguide images of the samples were taken. Optical propagation loss measurements, at 633 nm, were studied. Film thickness and cross-sectional scanning electron microscopy images were obtained as a function of process conditions. FT-IR spectroscopy was used to monitor chemical reaction pathways in the system during processing. It was demonstrated that the crosslinking of epoxy groups in the structure, along with inorganic network formation as a result of sol-gel reactions, was the primary reason for the changes in the optical and physical properties of the system. As Zr containing species and/or UV irradiation may be employed to crosslink the epoxy groups in the structure, the optical and physical properties of the system can be tuned by optimal combination of these two crosslinking methods, as well as sol ageing process.     

Dielectric and optical properties of BaTiO<Subscript>3</Subscript> thin films prepared by low-temperature process

Barium titanate (BaTiO₃) thin films have been prepared by low temperature processing on Pt/Ti/SiO₂/Si substrates using sol-gel-hydrothermal (SGHT) technique, which combined the conventional sol-gel process and hydrothermal method. X-ray diffraction analysis showed that the barium titanate thin films are polycrystalline. As-reacted barium titanate films grown on Pt(111)/Ti/SiO₂/Si(100) substrates had a dielectric constant (ε) and loss tangent (tanδ) of 80 and 0.05 at 1 MHz, respectively. The optical constants including refractive index n, extinction coefficient k, and absorption coefficient α of the barium titanate thin films in the wavelength range of 2.5–12.6 μm were obtained by infrared spectroscopic ellipsometry.     

乙烯聚合水杨醛亚胺锆配合物的合成、结构和固定化

合成和表征了2个锆的配合物：Bis[N-(3-tert-butylsalicylidene) allylaminato] zirconium dichloride (4)和Bis[N-(3-tert-butylsali-cylidene)-iso-butylaminato] zirconium dichloride (5)，并且得到了配合物4的单晶结构。在引发剂的作用下，配合物4和苯乙烯进行自由基共聚，得到高分子化催化剂6。在助催化剂MMAO的存在下，4，5和6都可以催化乙烯聚合。最高活性为3.7×10⁶ g PE·(mol Zr)^-1·h^-1。     

Evolution of the Si-condensed species in a multicomponent polymeric system

Alcoholic sol-gel systems were prepared using a pre-hydrolyzed tetraethyl orthosilicate (TEOS) sol as the main component. Ti and Zr alkoxides were also introduced in order to provide properties of technological interesttowards producing the final ceramics. The molar ratios Si:Ti:Zr were 82:7:11, respectively. Six potential chelating molecules were used as modifying agents in order to control the reactivity of Ti and Zr, avoiding precipitation. The products were characterized by spectroscopic techniques including Small Angle X-ray Scattering (SAXS), ²⁹Si NMR, UV-Vis and Fourier Transform Infrared (FTIR) spectroscopies. The radial distribution functions (RDF) of the gels and calcined solids were obtained; in addition, the porosimetry study of the solids calcined at 873 K in air was performed. The results are mainly discussed in terms of the condensation of the Si species; however, the influence of Ti, Zr and the modifying agent structures is also considered.     

Facile preparation of vanadium oxide thin films on sapphire(0001) by sol–gel method

The Ba_0.6Sr_0.4TiO₃ (BST60) thin films were deposited on Pt(111)/Ti/SiO₂/Si(100) substrates by a sol–gel method. The thickness of CeO₂, serving as a buffer layer, was varied from 0 to 75 nm, in order to optimize the dielectric tunable property. X-ray patterns analysis indicates that all the thin films exhibit good crystalline quality with a pure perovskite phase and insertion of the CeO₂ buffer layer does not change the crystal structure of BST60. Dielectric properties of the thin films were investigated as a function of both temperature and direct current electric field. The results show that dielectric constant and loss are modified by insertion of the CeO₂ buffer layer. The BST60 thin films with 25 nm thickness CeO₂ buffer layer have the highest figure of merit, low dielectric loss, and suitable dielectric constant, which render them attractive for the tunable microwave device applications.     

Plane hydrodynamic flow in thin free suspended nematic liquid crystal films

Abstract

Radial hydrodynamic flows in free suspended films (with thickness h ≥ 20 μm) of some liquid crystal materials was observed in a narrow temperature range before the line nematic-smectic C transition. The observed flows are explained by a non-linear temperature dependence of the surface tension (Marangoni effect).

Upon thinning the liquid crystal films to a thickness 6 μ < h < 20 μm the hydrodynamic flow changes its character: instead of radial flow with sinking seeding particles we observe two circular plane hydrodynamic flows symmetrical to the film's diameter. The temperature distribution in the free film and the surface tension field are discussed. A model for the established circular flows in thin liquid crystal films is presented.     

Single-step sol-gel deposition and dielectric properties of 0.4 μm thick, (001) oriented Pb(Zr,Ti)O<Subscript>3</Subscript> thin films

Single-step sol–gel deposition was attempted for realizing submicron thick, (001) oriented Pb(Zr_0.53Ti_0.47)O₃ (PZT) thin films, using an alkoxide solution containing polyvinylpyrrolidone (PVP). A solution of molar composition, Pb(NO₃)₂:Zr(OC₃H₇ ⁿ)₄:Ti(OC₃H₇ ⁱ)₄:PVP:H₂O:CH₃COCH₂COCH₃:CH₃OC₂H₄OH:C₃H₇ ⁿOH = 1.1:0.53:0.47:0.5:5:0.5:22:0.98, was prepared as a coating solution. Gel films were prepared on Pt(111)/TiO₂/SiO₂/Si(100) substrates by spin-coating, and calcined at 350 °C and annealed at 650 °C either in an electric furnace or in a near-infrared (IR) furnace. When calcined in the near-IR furnace, the films became (001) oriented on annealing. When calcined in the electric furnace, on the other hand, the films became randomly oriented on annealing. These observations indicate that the heating the gel films from the substrate side in the calcination step at 350 °C induces crystallographic orientation in the annealing step at 650 °C. The effects of the heating methods on the thermal decomposition of the gel films, and the microstructure and dielectric properties of the fired films were studied. Finally 0.4 μm thick, (001) oriented PZT films could be successfully prepared by non-repetitive, single-step deposition. The oriented film thus obtained had the remnant polarization 2P _r of 39 μC/cm² and the dielectric constant ε′ of 960 ± 169.