Pb对SiCp／Al-1．2Mg-0．6Si-0．1Ti复合材料界面结构的影响

采用搅拌复合方法制备了SiCp／Al-1．2Mg-0．6Si-0．1Ti-1．0Pb复合材料，通过透射电镜研究了复合材料的界面结构。复合材料中增强体SiC与基体合金的界面主要为SiC／Al、SiC／Pb、SiC／Mg2Si，Pb在复合材料中主要以面心立方Ph相形式存在于SiC颗粒的界面上，部分SiC颗粒的界面存在Al4C3。界面Ph相中存在着Ti元素，由于合金元素之间的相互作用使基体合金中的Ph、Ti元素集中存在于SiC的界面上。     

SiCp/2024Al基复合材料的界面行为

采用真空热压烧结工艺在580℃下制备了35%(体积分数)SiCp/2024铝基复合材料,利用透射电镜(TEM)、能谱(EDS)、高分辨透射电镜(HRTEM)对复合材料中SiC/Al,合金相/Al的界面结构进行了表征,研究了增强体SiC和基体Al以及热处理前后合金相与基体Al的界面类型,取向结合机制。结果表明,SiC/Al界面清晰平滑,无界面反应物和颗粒溶解现象,也无空洞缺陷。SiC/Al界面类型包括非晶层界面和干净界面。干净界面中SiC和Al之间没有固定或优先的取向关系,取向结合机制为紧密的原子匹配形成的半共格界面。热压烧结所得复合材料中的合金相以Al4Cu9为主,与基体Al的界面为不共格界面,热处理后,合金相Al2Cu弥散分布于基体中,与基体Al的界面为错配度较小的半共格界面。     

电子封装用AlSiC复合材料热导率影响因素探讨

采用模压成型和真空压力浸渗工艺制备了高体积分数SiC增强Al基复合材料(AlSiC)。物相和显微结构研究结果表明,此种方法制备的AlSiC复合材料,组织致密且大小两种粒径的SiC颗粒均匀分布于Al基质中,界面结合强度高;SiC增强颗粒与Al基质界面反应控制良好,未出现Al4C3等脆性相。在此基础上,研究了基体金属、粘结剂用量、粗细SiC颗粒比例对复合材料热导率的影响。结果表明,以1A90高纯铝为基体的复合材料的热导率高于以6061铝合金为基体的复合材料的热导率;粘结剂用量减少时,复合材料热导率提高;当SiC体积分数一定时,AlSiC复合材料的热导率随增强体中粗颗粒SiC比例增大而增大。     

高体积分数SiCp/2024Al基复合材料添加Ti-6Al-4V中间层激光焊接特性

高体积分数SiCp/2024Al基复合材料由于大量增强相颗粒的存在,在熔化焊接过程中Al基体极易与SiC颗粒反应,生成Al4C3金属间化合物,严重降低焊缝的力学性能。以Ti-6Al-4V金属薄片作为中间层填充材料,采用氩气作为保护气体,对SiC体积分数为45%的SiCp/Al基复合材料进行激光焊接,分析SiCp/Al基复合材料的焊接特性。结果表明,填充钛合金材料进行CO2激光焊接时接头组织致密,结合较好,在焊缝组织中获得了以Ti3Al为基体、Ti5Si3和TiC等反应产物为增强相的焊缝组织,所获得的最高抗拉强度为母材的50%左右。     

激光熔化沉积Ti60合金和TiC_P/Ti60复合材料的显微组织及高温拉伸性能

通过激光熔化沉积工艺制备出Ti60合金和TiCP(质量分数为5%)/Ti60复合材料薄壁材料,分析了两种材料的显微组织及600℃下的高温拉伸性能。结果表明,激光熔化沉积Ti60合金具有典型的魏氏组织特征,在亚晶界处和α/β界面处存在球形富钕稀土相;TiCP/Ti60复合材料中存在少量未完全熔化的TiC颗粒,熔化析出的TiC相呈断续链状,均匀分布于基体中,TiC与钛合金基体的界面结合良好。在600℃下,TiCP/Ti60复合材料的拉伸强度比Ti60合金提高了65 MPa,而延伸率明显降低。Ti60合金在高温下发生韧性断裂,而TiCP/Ti60复合材料的断口特征比较复杂,既有沿晶断裂和准解理断裂也有局部的韧性断裂。     

铸态SiCp/Al基复合材料中的台阶界面

采用铸造方法制备了SiCp／Al—10Si-0.5Mg、SiCp／Al—5Si-0．5Mg复合材料，以常规透射电镜为主要分析手段，对复合材料中六方SiC颗粒上的台阶界面进行了研究。台阶界面产生于SiC颗粒上的局部区域。台阶上两个相交的小平面，其中之一是六方SiC晶体中的(0001)最密排面，台阶界面上增强体与基体结合良好。提出了台阶界面形成的两种机制。     

激光焊接铝基复合材料钛的原位增强作用

本文采用激光焊接SiC_p/6063铝基复合材料,并利用Ti对焊缝进行原位增强。研究结果表明,焊缝和热影响区均较窄,焊缝中观察不到孔洞存在。对焊缝中心的微观组织分析表明,焊缝基体的晶粒非常细小,呈等轴结晶方式,焊缝组织非常致密,没有明显的微观气孔和裂纹。焊缝中已经观察不到SiC颗粒与基体在熔焊条件下发生反应生成的针状反应物Al_4C_3,而是尺寸更为细小的TiC颗粒,近似呈球形,在焊缝中分布比较均匀。整个焊接区域转变为母材是SiC颗粒增强的Al基复合材料,而焊缝主要是以TiC颗粒增强相以Ti为基体的局部区域。研究结果表明,用钛作为合金化元素通过使用原位焊缝合金化/脉冲激光焊接SiC_p/6063复合材料可以达到完全抑制在焊缝中心区形成Al_4C_3,焊缝接头强度由于快速固化的TiC等相而得到提高。     

SiC增强Al基复合材料的制备和性能

采用模压成型和真空压力浸渗工艺制备了高体积分数SiC增强Al基复合材料(AlSiC)。物相和显微结构研究结果表明,此种方法制备的AlSiC复合材料,组织致密且大小两种粒径的SiC颗粒均匀分布于Al基质中,界面结合强度高;SiC增强颗粒与Al基质界面反应控制良好,未出现Al4C3脆性相。对Al4C3相形成机理进行了分析,指出6061铝合金中的Si元素和真空压力浸渗工艺条件有利于防止脆性相Al4C3的形成。热性能测试结果表明,随温度升高,复合材料热膨胀系数先增大后减小,315℃附近出现最大值。所获得复合材料的平均热膨胀系数为7.00×10-6℃-1,热导率为155.1W/mK,密度为3.1g/cm3,完全满足高性能电子封装材料的要求。     

Al2O3/Al复合材料界面上MgAl2O4尖晶石形成的高分辨电镜观察

界面问题一直是复合材料研究者最关心的话题之一.界面结合的好坏直接关系到载荷从基体向增强体的传递效率.Al2O3/Al复合材料中,由于Al与Al2O3本征不润湿的特征,人们提出了一系列的措施来改良界面,其中一种就是基体合金化.Mg元素是显著增强润湿的合金元素之一,但是由于Mg在界面上引起的一系列化学反应使其界面反应润湿现象变得复杂起来.     

SiCp/A390复合材料中析出相的形貌及界面结构演变

采用快速凝固的A390铝合金粉体和SiC颗粒,通过粉末冶金法+热挤压工艺制备了SiCp/A390复合材料,并对复合材料进行了T6处理,利用扫描电镜(SEM)、透射电镜(TEM)及高分辨透射电镜(HRTEM)对复合材料时效过程中第二相的析出形貌及界面结构进行了表征,测定了复合材料的力学性能,探讨了析出相的演变规律、析出相与基体的界面结构及其对力学性能的影响.结果表明:SiCp/A390复合材料经固溶+时效处理后,合金元素从基体中析出形成GP区,然后转变为颗粒状的δ″相.随着时效时间的延长,这些颗粒状δ″相继续长大成δ′相和δ相;同时,时效析出相与基体之间界面结构随时效时间的延长发生着转变,其转变规律为:完全共格界面GP区→共格界面的δ″相→半共格界面δ′相→非共格界面δ相;SiCp/A390复合材料的抗拉强度随着时效时间延长先增加后降低,在时效6h时,复合材料的力学性能达到最大值.     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Preparation and Characterization of TaN ALD Precursors

High purity organic-tantalum precursors for thin film ALD TaN were synthesized and characterized.Vapor pressure and thermal stability of these precursors were studied.From the vapor pressure analysis,it was found that TBTEMT has a higher vapor pressure than any other published liquid TaN precursor,including TBTDET,TAITMATA,and IPTDET.Thermal stability of the alkyl groups on the precursors was investigated using a 1H NMR technique.The results indicated that the tertbutylimino group is the most stable group on TBTDET and TBTEMT as compared to the dialkylamido groups.Thermal stability of TaN precursors decreased in the following order:TBTDET ＞ PDMAT ＞ TBTEMT.In conclusion,precursor vapor pressure and thermal stability were tuned by making slight variations in the ligand sphere around the metal center.     

Curved crystal spectrometer for the measurement of X-ray lines from laser-produced plasmas

In order to diagnose the laser-produced plasmas, a focusing curved crystal spectrometer has been developed for measuring the X-ray lines radiated from a laser-produced plasmas. The design is based on the fact that the ray emitted from a source located at one focus of an ellipse will converge on the other focus by the reflection of the elliptical surface. The focal length and the eccentricity of the ellipse are 1350 mm and 0.9586, respectively. The spectrometer can be used to measure the X- ray lines in the wavelength range of 0.2-0.37 nm, and a LiF crystal （200） （2d = 0.4027 nm） is used as dispersive element covering Bragg angle from 30° to 67.5°. The spectrometer was tested on Shengnang- Ⅱ which can deliver laser energy of 60-80 J/pulse and the laser wavelength is 0.35 μm. Photographs of spectra including the 1 s2p ^1P1-1s^2 ^1S0 resonance line（w）, the 1s2p ^3P2-1s^2 1S0 magnetic quadrupole line（x）, the 1s2p ^3P1-1 s^2 ^1S0 intercombination lines（y）, the 1 s2p ^3S~1-1 s^2 ^1S0 forbidden line（z） in helium-like Ti Ⅹ Ⅺ and the 1 s2s2p ^2P3/2-1 s622s ^2S1/2 line（q） in lithium-like Ti Ⅹ Ⅹhave been recorded with a X-ray CCD camera. The experimental result shows that the wavelength resolution（λ/△ 2） is above 1000 and the elliptical crystal spectrometer is suitable for X-ray spectroscopy.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.     

An improved parallel thinning algorithm with two subiterations

The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.     

Theoretical analysis of the relationship between the Brillouin gain coefficient and the strain in the optical-fiber sensors

The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation.     

Novel fiber-optical interferometer with miniaturized probe for in-hole measurements

Today, micro-system technology and the development of new MEMS （Micro-Electro-Mechanical Systems） are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible.     

Study of waveguide coupling efficiency in hybrid silicon lasers

This paper presents a new method to increase the waveguide coupling efficiency in hybrid silicon lasers. We find that the propagation constant of the InGaAsP emitting layer can be equal to that of the Si resonant layer through improving the design size of the InP waveguide. The coupling power achieves 42% of the total power in the hybrid lasers when the thickness of the bonding layer is 100 nm. Our result is very close to 50% of the total power reported by Intel when the thickness of the thin bonding layer is less than 5 nm. Therefore, our invariable coupling power technique is simpler than Intel＇s.     

Electronic Structure of Semiconductor Nanocrystals

This paper reviews our recent development of the use of the large-scale pseudopotential method to calculate the electronic structure of semiconductor nanocrystals, such as quantum dots and wires, which often contain tens of thousands of atoms. The calculated size-dependent exciton energies and absorption spectra of quantum dots and wires are in good agreement with experiments. We show that the electronic structure of a nanocrystal can be tuned not only by its size,but also by its shape. Finally,we show that defect properties in quantum dots can be significantly different from those in bulk semiconductors.     

Critical Stage Rule-Based Real Time Dispatch（RTD）System in Highly-Mixed-Products （HMP） FAB

An improving utilization and efficiency of critical equipments in semiconductor wafer fabrication facilities are concerned. Semiconductor manufacturing FAB is one of the most complicated and cost sensitive environments. A good dispatching tool will make big difference in equipment utilization and FAB output as a whole. The equipment in this paper is In-Line DUV Scanner. There are many factors impacting utilization and output on this equipment group. In HMP environment one of the issues is changing of reticule in this area and idle counts due to load unbalance between equipments. Here we'll introduce a rule-based RTD system which aiming at decreasing the number of recipe change and idle counts among a group of scanner equipment in a high-mixed-products FAB.