High-performance 640-nm-range GaInP-AlGaInP lasers based on the longitudinal photonic bandgap crystal with narrow vertical beam divergence

We address the design and performance issues of 640-nm range GaInP-AlGaInP laser diodes based on a longitudinal photonic bandgap crystal (PBC). The all-epitaxial design is based on selective filtering of high-order modes and allows extending of the fundamental mode over a PBC waveguide achieving very large vertical modal spot size. At the same time the robustness of the narrow far-field vertical beam divergence is remarkably high with respect to layer thickness variations. Optimal design ensures that all high-order optical modes show high absolute values of leakage loss (> 30 cm/sup -1/), which are order (orders) of magnitude higher than the leakage loss for the fundamental mode. This PBC-induced "resonant tunneling effect" for high-order modes leads to preferential excitation of the fundamental mode and the high-order modes are not excited even at the highest injection current densities. Broad-area (100 /spl mu/m) devices show vertical beam divergence of 8' (full-width at half-maximum) and lateral beam divergence of 7'-8'. The far-field pattern is circular shaped and stable upon an increase in injection current. Differential quantum efficiency is as high as 85 %. Maximum pulsed total optical output power is 20 W for 100-tim-wide stripe lasers with uncoated fac.     

Single transverse mode 850nm GaAs/AlGaAs lasers with narrow beam divergence

GaAs/AlGaAs 850 nm range lasers based on a longitudinal photonic bandgap crystal waveguide show narrow vertical far-field pattern. Vertical and lateral beam divergence with FWHM below 10deg and 5deg, respectively, is demonstrated for 4 mum stripe width, being independent on injection current. Excellent beam quality with M² =1.4, low internal losses of 1.4 cm^-1 and high differential quantum efficiency of 83% are observed     

三列阵射频波导CO_2激光器的远场特性研究

本文从理论上分析了列阵射频波导CO_2激光器的输出远场特性,进行了实验验证,测得了远场光场分布及束散等参数,理论与实验基本相符。     

High slope efficiency and low noise characteristics intapered-active-stripe DFB lasers with narrow beam divergence

We report high slope efficiency and low noise characteristics in a distributed feedback (DFB) laser lasing at 1.3 μm with narrow beam divergence by employment of a laterally tapered active stripe over the whole cavity. This tapered structure is designed to realize narrow beam divergence, low threshold current, and high longitudinal mode selectivity. The fabricated tapered-active-stripe DFB lasers demonstrated of 9.20×13.40 and a record slope efficiency, for a narrow beam DFB laser, of 0.59 mW/mA. The temperature characteristics from -10°C to 85°C shows high output power at high temperature, stable single longitudinal mode oscillation and stable far-field patterns. Furthermore, for the first time ever, a low relative intensity noise characteristic of under -155 dB/Hz has been realized when butt-coupling into a single-mode fiber     

非球面镜准直大功率半导体激光阵列远场特性

针对目前采用非球面快慢轴准直镜准直的大功率半导体激光阵列的远场光束特性在理论上缺乏准确的描述,而常用的单一能量利用率光束发散角不能够准确地描述半导体激光器准直光束的特性,难以有效指导其后整形、聚焦等光学系统设计的问题,文章利用CCD成像结合图像处理手段对半导体激光阵列光束经过非球面快慢轴准直镜后的远场光束进行实验研究。实验结果表明,随着能量利用率选择不同快、慢轴远场发散角变化趋势有较大区别,在较高能量利用率条件下,快轴方向能量利用率的微小增加可导致光束质量的迅速劣化,对光学系统要求苛刻;而慢轴方向能量分布较为均匀,光学系统冗余量较大。     

大功率垂直腔底发射半导体激光器的光束质量

从M2因子、远场发散角、近场及远场光强分布等方面对大功率底发射半导体激光器光束质量进行研究,分析了不同器件参数对光束质量的影响,为寻找有效改善光束质量的方法提供了依据。设计了一种具有新型排列方式的垂直腔面发射半导体激光(VCSEL)阵列。通过调制阵列中各单元直径以及单元间距,在4 A的工作电流下得到1 kW/cm2的高功率密度和高斯远场分布。与具有相同出光面积的单管器件和4×4二维阵列比较,新型阵列的光谱特性及光束质量均具有优越性。     

大功率TEA CO2 激光远场发散角评估方法

在大功率激光远距离定向传输中,远场发散角是衡量其性能的一个重要参量。大功率TEA CO2激光具有功率高、光束直径大等特点,常规手段无法准确测量其远场发散角。为解决该难题,提出了一种利用激光光斑尺寸拟合分析法来评估大功率TEA CO2激光的远场发散角。首先,从理论上推导大Fresnel数多模高斯激光束远场发散角,分析了影响激光束发散角的主要因素;然后,采用光斑烧蚀法试验测量近场(20 m)光斑数据,基于光束质量(M2)因子理论拟合得出了激光光束质量和束腰大小,从而推导出激光束远场发散角;最后,对比分析了以上两种方法的计算结果,讨论了结果存在偏差的原因。结果表明,近场光斑数据拟合法可准确、便捷地测量大功率TEA CO2激光束远场发散角。     

激光束质量实时测量技术

提出一种新型光束质量实时测量技术,该技术主要基于由平板反射镜组成的多平面成像系统,一次性将激光束腰附近2倍瑞利距离内的多个光斑成像在同一个平面上,用CCD相机获取这些光斑的光强分布图样。通过图像处理获知接收到的光斑的光强分布。采用远场发散角、焦点尺寸、桶中功率比和M2因子四种光束质量评价标准对激光光束质量进行评价。利用该方法实时测量了高能钕玻璃双板条激光器的输出光束。     

Improved high-power twin-channel laser with blocking layer

We present an improved version of the twin-channel laser as a prototype for a new concept in semiconductor laser array structures with a well controlled far-field beam pattern. The laser device constitutes the first CW semiconductor laser array structure on a p-type GaAs substrate using current-blocking layers and yields improved current utilisation and efficiency over previous structures.     

线阵光纤激光相干合成角度扫描控制方法研究

基于光的干涉理论,对多芯线阵光纤激光通过相干合成进行角度扫描的原理进行了研究。利用相干合成模型,用MATLAB分别对信号无噪声与含有随机相位噪声时的合成效果进行了数值仿真计算,分析了通过主动相位控制对合成光进行角度扫描的可行性;基于MOPA结构光纤激光线列搭建了相干合成角度扫描控制系统。通过实验验证了在多路光纤激光完成锁相后,若依次等比改变各芯激光的相位可以实现主极大条纹连续的角度扫描,扫描范围与模型中计算所得结果基本一致,实验结果与理论计算相符。该方法的探索研究对线列光纤激光的相干合成应用拓展有一定的指导意义。     

LD激光与单模光纤耦合时的失准容忍度分析

本文导出了ＬＤ激光与带端面微透镜的单模光纤直接（ＳＭＦ）耦合时的失准容忍不变量－失准容忍面积。并指出横向与角向的中心失准容忍度分别与ＬＤ的模斑尺寸、ＳＭＦ模斑对应的远场发散角成正比；而横向和角向的最大失准容忍量却分别与ＳＭＦ的模斑尺寸、ＬＤ的远场发散角成正比。最大失准容忍量是中心失准容忍量的Ｋ倍。     

Time resolved beam divergence from a copper vapor laser withunstable resonator

The temporal evolution of the far-field intensity distribution (and hence beam divergence) for the output of a CVL operating with both on-axis and off-axis unstable resonators is investigated in detail. The CVL output pulse consists of several temporally resolved components, where each successive component has lower divergence approaching the diffraction limit. A comprehensive model for the divergence of each temporal component from a CVL operating with a variety of unstable resonators is presented. In this model the resonator controls the output divergence by imposing geometric constraints on the propagation of spontaneous emission on repeated round-trips through the unstable resonator equivalent lensguide. Effects of resonator asymmetry and radial gain variations on the far-field intensity distribution (and hence divergence) are evaluated. Experimental measurements of the temporal evolution of output divergence from a CVL operating with both on-axis and off-axis unstable resonators and for a variety of excitation conditions are also presented. For CVL operation at high pulse repetition frequency the ASE at the start of the laser pulse has an annular profile. This annular gain distribution is found to modify the output far-field intensity distribution of the earlier temporal components of the laser pulse. For on-axis unstable resonators these components are found to have annular far-field intensity distributions, whereas for off-axis unstable resonators they have greatly reduced but anisotropic divergence     

He-Ne激光束远场发散角的精确测量及误差分析

首先利用远场光斑测量法,测得GY-10型He-Ne激光器的远场发散角为1.15mrad.接着,根据高斯光束对望远镜系统变换,通过两个望远镜实现He-Ne激光束的准直,得到水平方向的远场发散角75.78 μrad,垂直方向76.53 μrad.最后,对实验中存在的误差分析可知,可用多次测量求平均值的方法消除误差;准直望远镜系统的微小失调可引起出射激光束远场发散角有较大的变化;测量系统中需使用长焦距的凹面镜.     

部分端面抽运板条激光器腔镜倾斜问题研究

部分端面抽运的板条激光器是一种新型固体激光器．配合混合腔可以实现在大功率下保持高光束质量的激光振荡输出。谐振腔的腔镜倾斜是影响激光器输出特性的重要因素，快速傅里叶方法是一种快捷有效的计算方法，利用此方法模拟了腔镜倾斜对近场相位分布和远场光强分布的影响，并分析了光束质量的变化。理论分析表明，腔镜的小角度倾斜对近场相位影响较大，但对远场光强空间分布影响不大；随着倾斜角度不断增大，远场发散角和光束腰宽度也增大，光束质量虽然存在恶化的趋势，但光束质量因子肝值仍然较小，离轴非稳腔仍能保持高光束质量的输出。     

半导体激光器光束特性的研究

研究半导体激光器(LD)的光束特性,并对其远场图像是近场图像的傅里叶变换进行了分析和推导。半导体激光器输出光束的方向性很差,发散角大致为10°-40°,并且在快轴和慢轴两个方向上相差较大,使得半导体激光器发射的激光束的束斑呈椭圆状,这对长距离传输很不利,因此本文还研究了光束的准直技术。     

Measurement of s.a.w. device stripe/period ratio using optical diffraction

The stripe/period ratio of periodic s.a.w. device masks has been determined by measuring the intensity of the diffraction maxima obtained when a laser beam is transmitted through the mask. Correlation of measured data with theoretical results is excellent. The technique can also be used to measure the stripe/period ratio on actual s.a.w. devices.     

“smile”对一维分布光源相干合束的影响

利用傅立叶方法导出的相下光束合成的远场表达式,讨论了一维锁相二极管激光列阵的相干合成远场.对发光单元数目分别为5、9、19列阵的同相模的远场光强分布进行了计算.以19个发光单元线阵为例,讨论了存在"smile"时DLA的远场特征,研究表明:"smile"对已经具有相干性的多光束合成场远场光强的分布并无严重的影响.     

弱磁场中向列相液晶TEB30A薄膜自衍射现象研究

采用1.5 mW低功率的He-Ne激光(632.8 nm)正入射向列相液晶TEB30A薄膜,研究向列相液晶TEB30A薄膜在不同强度的弱磁场(0、0.4649、0.5062和0.5185 T)中的远场衍射特性。实验结果表明,向列相液晶TEB30A薄膜在4种不同强度的弱磁场(0,0.4649,0.5062和0.5185 T)中都能产生远场衍射。衍射图样会随磁场强度的增加而发生明显的变化。衍射环的数目增加,衍射环宽度变宽,衍射场向外拓展。当磁场强度为0.5062 T时,衍射环上出现了近似相互平行的干涉直条纹。当磁场强度达到0.5185 T时,干涉直条纹更加明显的趋于平行。在弱磁场的作用下,激光束在远场的散度变得明显。基于Kirchhoff-Fraunhofer衍射积分原理的理论模拟结果表明,当激光通过处在弱磁场中的向列相液晶TEB30A薄膜时,横向非线性相移会增大。随着弱磁场强度由0 T增加到0.5185 T,非线性相移也由4 π增加到20 π。弱磁场引起样品非线性相移增大,导致其远场衍射图样发生了变化。远场衍射光强图样的变化也是透射光能量分布的改变,因此,可将弱磁场调控向列相液晶这一技术应用于磁控光开关及光限幅等领域。     

Supermodes of hermite tapered arrays of vertical-cavitysemiconductor lasers

Two-dimensional arrays of vertical-cavity semiconductor lasers were prepared by mirror patterning. The size of the laser elements of the array was tapered according to the Hermite polynomial zeros, in order to achieve a multilobed far-field pattern, e.g., for applications as an array illuminator. Injecting short current pulses (~100 ns) to the N×N Hermite tapered vertical-cavity semiconductor laser array resulted in the lasing of anti-phase supermodes, similar to supermodes of uniform size but (N+2)×(N+2) laser arrays. Excitation by a long pulse resulted in a supermode localized on the larger elements of the array-exhibiting the desired multilobed far-field intensity pattern     

Paraxial-misalignment insensitive external-cavitysemiconductor-laser array emitting near-diffraction limited single-lobedbeam

We present a novel easy-to-align external cavity configuration for efficiently obtaining a near-diffraction limited single-lobed beam from gain-guided laser diode arrays. The external cavity has an external mirror (EM) in the image plane of the array. Two bulk-optics experimental setups are evaluated and a compact GRIN lens design is discussed. There are several advantages for the present geometry, including orders of magnitude lower misalignment-sensitivity and superior mode discrimination. Both experimental setups deliver near-diffraction limited single-lobed beams (of width ~0.8° at the rated output power of 100 mW of the array) in the entire current range. The light-current (L-I) characteristic is linear and kink-free and one of the setups shows higher efficiency than the free-running array. The broad-area laser (BAL) mode theory is discussed, introducing radiation losses to the analysis. Several aspects of amplification in laser arrays are theoretically explained, such as why the optimum angle of the far-field lobe is always greater than the tenth mode angle (for a uniform 10-stripe array). It is shown that the gain of the amplifying medium broadens the far-field profile. The width of the far-field lobe increases with gain and decreases with the lobe angle. An analytical expression for the broadened far-field profile of BAL modes is presented. The theory compares very well with the experiments