A new SPICE subcircuit model of power p-i-n diode

A new modeling approach for the power p-i-n diode is proposed. The base region is represented with a two-port network, obtained by solving the ambipolar diffusion equation with the Laplace transform method, and by approximating the resulting transcendental functions in the s-domain with rational approximations. Two different networks have been obtained. The first one, based on Taylor-series approximation is shown to be a generalization of a two-port model already proposed in the literature for the nonquasi-static modeling of bipolar transistors. The second network representation is based on Pade' approximation and is shown to be more accurate than the Taylor-series approach, The obtained RLC networks are easily implemented in a PSPICE subcircuit which also takes into account the emitter recombination effects and the dynamic of the space-charge voltage build-up. Good agreement has been obtained by comparing the results of the proposed model with numerical device simulations     

A Zener diode model with application to SPICE2

A Zener diode model for use with circuit analysis programs is described, and the implementation of the model in SPICE2 is explained. Breakdown is modeled as a sum of one or two exponential terms. If breakdown is neglected, the model reduces to an ordinary diode model. A new limiting algorithm is presented to ensure numerical stability.     

On the validity of the standard SPICE model of the diode forsimulation in power electronics

A systematic study of the standard SPICE model of the diode in the case of simulations of power diodes in power electronic applications shows the limits of accuracy with respect to experiments. Therefore, the interest in such a model in power electronic applications is comparable to the high-low resistance model     

A versatile switch model for power electronics SPICE2 simulations

Using a versatile switch model, a SPICE2 input file containing voltage-controlled hysteresis, nonhysteresis switches, and ideal silicon-controlled rectifiers can be written to perform both steady-state and transient analysis. Two typical power electronics circuits are simulated to demonstrate various aspects of the model     

基于Matlab对Spice二极管特性受温度影响的研究

为了对Spice程序下的二极管模型的伏安特性和等效电容受温度变化的影响进行研究,在此以软件Matlab的仿真环境为基础,Spice二极管物理模型D1N4002为研究对象,在仿真软件Matlab中编写程序代码,建立了二极管模型D1N4002的伏安特性和等效电容的函数模型,绘制出不同温度下二极管伏安特性和等效电容的曲线,并结合仿真曲线对由温度变化产生的影响进行分析,得出了温度对二板管模型在反向击穿和正向导通状态下的伏安特性及等效电容有明显的影响这一结论。该研究方法以一个新颖的视角,运用Matlab构造特性函数,以温度为变量,研究了Spice二极管模型的特性,同时也为其他更加复杂的半导体器件特性的研究打下了基础。     

基于解析电导率模型的相变存储器SPICE模型

在相变存储器的外围电路设计中,相变存储单元的电路模型是连接器件与电路的桥梁。在本文中,提出了一种基于解析电导率模型的相变存储器电路模型,与前面的工作相比,该模型利用解析电导率模型代替了使用传统模型中需要利用测试结果建模的缺点,可以通过材料的参数计算相变存储单元的电阻,能够反映相变材料中的载流子传输特性。同时,基于等温假设,提出了解析温度模型,并基于JMA方程建立的相变动力学模型,结果表明,该模型能够进行相变存储单元瞬态与稳态电路仿真,并与测试结果符合较好。     

A new SPICE MOSFET Level 3-like model of HEMT's for circuitsimulation

A fully analytical model for the current-voltage (I-V) characteristics of HEMT's is presented. It uses a polynomial expression to model the dependence of sheet carrier concentration (n_s) in the two-dimensional electron gas (2-DEG) on gate voltage (V_G ). The resultant I-V relationship incorporates a correction factor α analogous to SPICE MOSFET Level 3 model and is therefore more accurate than models assuming a linear n_s-V_G dependence leading to square law type I-V characteristics. The model shows excellent agreement with experimental data over a wide range of bias. Further, unlike other models using nonlinear n_s-V_G dependence, it neither uses fitting parameters nor does it resort to iterative methods at any stage. It also includes the effects of the extrinsic source and drain resistances. Due to its simplicity and similarity in formulation to the SPICE MOSFET Level 3 model, it is ideally suited for circuit simulation purposes     

High power laser diode driver based on power converter technology

This paper describes the design of a high speed semiconductor laser diode driver designed for driving 500 mW to 1.5 W diodes at full optical power modulation up to frequencies of 10 MHz. The duty cycle of the modulation may be varied. A switching power-converter based current source allows a higher power delivery efficiency to the diode than in previous designs, allowing for a more modest power supply and dissipation requirements. A dynamic ripple cancellation circuit reduces the power converter output current ripple to less than 1% of full-scale current. The circuit is capable of delivering up to 2.5 A to a laser load, with a 10-90% switching risetime from laser threshold to full on of less than 20 ns     

Concise transient SPICE model for bipolar power transistor quasi-saturation simulation

A concise transient SPICE model is presented in this paper to predict both the static and the switching behaviour of power transistors, with emphasis placed on quasi-saturation effects. The model is proposed to simulate both ohmic and non-ohmic quasi-saturation phenomena by automatically adjusting the hole injection ratio term. The model incorporates the currently used Gummel-Poon (GP) model and an additional charge-control relation for the transistor's epitaxial collector. The turn-off charge removal phenomenon is not modelled specifically; however, the charge-control equation for the epitaxial collector region may partly simulate this effect where the quasi-saturation region is entered. The validity of the model is verified by comparison between the original SPICE bipolar junction transistor model and experimental data for both DC and turn-on conditions. Methods for determining the model parameters are described.     

A new device-a power semiconductor diode with an integrated thermalsensor

A power semiconductor diode with an integrated thermal sensor is introduced. Means for producing such a device are presented, and the resulting device is analyzed. The theoretical model agrees with the experimental results within 10%. The practical conditions in which the sensor can be used are discussed     

采用实时功率反馈的半导体激光器幅度调制方法

针对现有半导体激光器（Laser Diode,LD）幅度调制电路具有调制幅度不稳定、调制波形存在非线性失真的缺点,提出采用实时功率反馈的幅度调制方法。通过光电二极管（Photodiode,PD）实时监测LD的输出功率,再根据LD的输出功率自动调整LD工作电流,使其输出功率随调制信号线性变化。最后根据提出的调制方法设计并实现了调制电路,实验结果表明:在温度20~40℃范围内,调制电路的-3 dB带宽达到20 MHz,调制功率的幅度稳定度优于4%,最大非线性误差为0.1%。该调制方法提高了半导体激光器的输出功率稳定性,减少了调制波形的非线性失真,拓宽了半导体激光器的线性工作范围。     

Design metal-dot based QCA circuits using SPICE model

This paper proposes a SPICE model development methodology for quantum-dot cellular automata (QCA) cells and presents a SPICE model for QCA cells. The model is validated by simulating the basic logic gates such as inverter and majority voter. The proposed model makes it possible to design and simulate QCA combinational circuits and hybrid circuits of QCA and other NANO devices using SPICE. In the second half part of the paper, SET and QCA co-design methodology is proposed and SET is used as a readout interface of the QCA cell array. The SET and QCA hybrid circuit is a promising nano-scale solution.     

A simple power diode model with forward and reverse recovery

The basic diode charge-control model used in SPICE is extended by employing the lumped charge concept of J.G. Linvill and J.F. Gibbons (1961) to derive a set of model equations from simplified device physics. Both forward and reverse recovery phenomena are included as well as emitter recombination. The complete model requires only seven relatively simple equations and three additional device parameters beyond the genetic SPICE diode model. A major feature of the model is that the same equations are valid through all regions of operation     

A laser diode model based on temperature dependent rate equations

Terms are included in the model to account for the variation in the laser's differential gain coefficient and transparency carrier density with temperature. The model shows good agreement with DC experimental results and is useful for the design of the control circuitry of laser diode-based optical transmitters operating over a wide range of temperatures. This is particularly important when noncooled lasers are used. The model can easily be extended to investigate transient behavior of the laser with change in temperature     

Thyristor switch model for power electronic circuit simulation inmodified SPICE 2

Modifications to the commercially available SPICE 2 program that allow the accurate simulation of thyristor circuits are discussed. A near-ideal switch model of a thyristor is developed using resistive components, thus eliminating the problems associated with transistor models. The simulator SPICE 2G.6 is modified and a new input format for the thyristor is implemented. Examples of simulations with the new model agree closely with theoretical and experimental investigations     

一种新的应用到硅基有机发光二极管微显示像素电路仿真的OLED SPICE模型

本文介绍了一种新的OLED器件等效电路模型。由于单二极管模型能和多二极管模型一样较好的模拟OLED特性,因此新模型是基于单二极管模型建立的。并且为了保证拟合数据和测试数据有很好的一致性,在新模型中将常量电阻替换成指数电阻。通过与测试数据和其他两种OLED SPICE模型的模拟数据对比,新的模型更符合OLED的电流电压特性。新的模型能直接整合到SPICE电路仿真器中去,并且在OLED整个电压工作范围内拥有较好的仿真精度。     

A versatile SPICE model for quantum-well lasers

A SPICE equivalent-circuit model for the design and analysis of quantum-well lasers is described. The model is based on the three-level rate equations which include, in their characterization of charge dynamics, the role of gateway states at the quantum well. The model is versatile in that it permits both small- and large-signal simulations to be performed. Emphasis here is placed on validating the model via a comparison of simulated results with measured data of the small-signal modulation response, obtained over a wide range of optical output powers from two lasers with different lengths of the separate-confinement heterostructure (SCH). Using a set of tightly specified model parameters, all the important trends in the experimental data are reproduced. The consideration of gateway states is found to be important, with regard to predicting the small-signal response, only for the laser with the longer SCH. This highlights the significance of the interplay between the roles of transport through the SCH and capture/release via the gateway states at the quantum well