BiPO4/g-C3N4二元催化剂的制备及其可见光催化性能研究

本研究通过一步搅拌法制备了BiPO_4/g-C_3N_4二元催化剂,以活性蓝19(RB19)为目标污染物,研究了其在可见光下的催化降解性能。采用X射线衍射(XRD)、透射电子显微镜(TEM)、紫外-可见漫反射光谱(DRS)和傅里叶红外光谱(FT-IR)等表征了催化剂的物化性质。结果表明:BiPO_4成功附着到g-C_3N_4上,并且分散效果较好,BiPO_4的掺入使g-C_3N_4的带隙变窄,提高了g-C_3N_4的可见光利用率,延长了光生电子-空穴对的寿命。最后通过分析推测出可能的光催化降解机理。     

Ag/多孔 g-C3N4复合光催化剂的制备及其降解四环素性能

以三聚氰胺和尿素为原料,通过水热结合热处理工艺得到多孔g-C3 N4(PCN),然后以硼氢化钠为还原剂,通过原位还原法制备了Ag/PCN复合材料.利用XRD、FTIR、UV-Vis DRS、TEM和电化学等测试对复合材料进行一系列表征.与相同条件下制备的g-C3 N4和多孔g-C3 N4相比,Ag/PCN具有更好的光吸...     

ZnO/g-C3 N4微纳米材料的制备及其性能研究

用Zn(NO_3)_2、ZnCl_2、C_4H_6O_4Zn·2H_2O及三聚氰胺为原料,采用热解法合成ZnO/g-C_3N_4复合光催化剂。为了对合成产物的组成、形貌及光吸收性能进行表征,我们利用了X射线衍射(XRD)、扫描电子显微镜(SEM)及UV-Vis等。研究了不同物质含量热解及ZnO的含量对合成产物的影响,并且以六价铬为污染模拟物,对合成的ZnO/g-C_3N_4进行光催化进行评价。结果表明ZnO/g-C_3N_4复合材料有更优秀的光催化性能,用氯化锌为2. 5 wt%、热解温度为510°C、保温时间120 min时,合成的ZnO/g-C_3N_4光催化性能最佳,用氙灯照射270 min后,对六价铬溶液的降解率达到了93. 19%,比用样条件下单一的g-C_3N_4光催化性能提高了44. 92%。     

非贵金属助催化剂Ni3N修饰g-C3N4用于可见光催化产氢的研究

近年来,利用太阳光光解水制氢被认为是解决当前能源短缺和环境污染问题的重要途径之一.众所周知,助催化剂可以有效的降低光催化产氢反应的活化能,提供产氢反应的活性位点,有效的促进催化剂中光生载流子的传输与分离,从而提高光催化剂产氢体系的反应活性和稳定性.然而,鉴于贵金属助催化剂(Pt, Au和Pd等)储量低、成本高,极大地制约了其应用.因而,开发出适用于光催化水分解制氢的非贵金属助催化剂尤为重要.石墨相氮化碳(g-C_3N_4)因其具有热稳定性、化学稳定性高以及制备成本低廉等优点,成为光催化领域研究的热点.然而,由于g-C_3N_4的禁带宽度(Eg=2.7 eV)较宽,致使其对可见光的响应能力较弱,并且在光催化反应过程中其光生电子-空穴对易复合,从而导致其光催化产氢活性较低.因此,如何开发出含非贵金属助催化剂的g-C_3N_4高效、稳定的太阳光催化分解水制氢体系引起了人们极大的关注.本文通过水热法-高温氨化法首次将非贵金属Ni_3N作为助催化剂来修饰g-C_3N_4,增强其可见光光催化性能(l420 nm).采用XRD、SEM、EDS、Mapping、UV-Vis、XPS和TEM等手段对Ni_3N/g-C_3N_4光催化体系进行了表征.结果表明, Ni_3N纳米颗粒成功的负载到g-C_3N_4表面且没有改变g-C_3N_4的层状结构.此外,采用荧光光谱分析(PL)、阻抗测试(EIS)和光电流谱进行表征,结果显示, Ni_3N纳米颗粒可有效促进催化剂中光生载流子的传输与分离,抑制电子-空穴对的复合.同时,将功率为300 W且装有紫外滤光片(λ420 nm)的氙灯作为可见光光源进行光催化产氢实验结果表明,引入了一定量的Ni_3N可以极大提高g-C_3N_4的光催化活性,其中, Ni_3N/g-C_3N_4#3的产氢量为～305.4μmol·h-1·g-1,大约是单体g-C_3N_4的3倍.此外,在450nm单色光照射下, Ni_3N/g-C_3N_4光催化产氢体系的量子效率能达到～0.45%,表明Ni_3N/g-C_3N_4具有将入射电子转化为氢气的能力.循环产氢实验表明, Ni_3N/g-C_3N_4在光催化产氢过程中有着较好的产氢活性和稳定性.最后,阐述了Ni_3N/g-C_3N_4体系的光催化产氢反应机理.本文采用的原料价格低廉,性能优异,制备简单,所制材料在光催化制氢领域展现出重要前景.     

中空管状g-C3N4/Ag3PO4复合催化剂的制备及其可见光催化性能

用化学沉淀法制备中空管状g-C₃N₄/Ag₃PO₄复合催化剂。通过X射线衍射(XRD)、扫描电子显微镜(SEM)、紫外可见漫反射光谱(UV-Vis DRS)和荧光光谱对其结构、形貌和光学性能进行了表征。结果表明：Ag₃PO₄纳米颗粒均匀地分散在中空管状g-C₃N₄表面,两者紧密结合形成异质结。研究复合催化剂在可见光照射下降解盐酸四环素(TC)的光催化活性。结果显示：复合催化剂在80 min内对TC的降解率为98%,其降解反应速率常数是纯相Ag₃PO₄的3倍。经过5次循环实验后复合催化剂对于TC的降解率仍保持87%,具有优良的循环稳定性。捕获实验表明空穴(h⁺)和超氧负离子(·O^-₂)是光催化反应过程中的主要活性物种。根据能带理论,提出了复合催化剂异质结的Z型光催化机理。     

新型BiOI/g-C3N4纳米片复合光催化剂的制备及其可见光催化活性增强

近年来, 石墨型氮化碳(g-C3N4)作为一种n型半导体光催化剂材料, 由于具有较好的热稳定性和化学稳定性, 同时具有可调的带隙结构和优异的表面性质而备受人们关注. 然而, 传统的g-C3N4块体材料存在比表面积小、光响应范围窄和光生载流子易复合等缺陷, 制约着其光催化活性的进一步提高. 因此, 人们开发了多种技术对块体状g-C3N4材料进行改性,其中构建基于g-C3N4纳米薄片的异质结复合光催化材料被认为是强化g-C3N4载流子分离效率, 进而提高其可见光催化活性的重要手段. BiOI作为一种窄带隙的p型半导体光催化剂, 具有强的可见光吸收能力和较高的光催化活性, 同时它与g-C3N4纳米薄片具有能级匹配的带隙结构. 因此, 基于以上两种半导体材料的特性, 构建新型的BiOI/g-C3N4纳米片复合光催化剂材料不仅能够有效提高g-C3N4的可见光利用率, 而且还可以在n型g-C3N4和p型BiOI界面间形成内建电场, 极大促进光生电子-空穴对的分离与迁移效率.为此, 本文通过简单的一步溶剂热法在g-C3N4纳米薄片表面原位生长BiOI纳米片材料, 成功制备了新型的BiOI/g-C3N4纳米片复合光催化剂. 利用X射线衍射仪(XRD), 场发射扫描电子显微镜(SEM)、透射电子显微镜(TEM)、紫外-可见漫反射光谱和瞬态光电流响应谱对所合成复合光催化剂的晶体结构、微观形貌、光吸收性能和电荷分离性能进行了表征测试. XRD, SEM和TEM结果显示, 结晶完好的BiOI呈小片状均匀分散在g-C3N4纳米薄片表面; 紫外漫反射光谱表明, 纳米片复合材料的吸光性能较g-C3N4薄片有显著提升; 瞬态光电流测试证明, 复合材料较单一材料有更好的电荷分离与迁移性能.在可见光催化降解RhB的测试中, BiOI/g-C3N4纳米片复合光催化剂显示出了优异的催化活性和稳定性, 其光降解活性分别为纯BiOI和g-C3N4的34.89和1.72倍; 自由基捕获实验发现, 反应过程中的主要活性物种为超氧自由基(·O2-), 即光生电子主导整个降解反应的发生. 由此可见, 强的可见光吸收能力和g-C3N4与BiOI界面处形成的内建电场协同促进了g-C3N4纳米薄片的电荷分离, 进而显著提高了该复合材料的可见光催化降解活性. 此外, 本文初步验证了在BiOI/g-C3N4纳米片复合光催化体系内光生电荷是依据"双向转移"机制进行分离和迁移的, 而非"Z型转移"机制.     

硝酸活化三聚氰胺前驱体对g-C3N4结构和可见光催化性能的影响

为缩短e-和h+的迁移途径而改善g-C3N4易发生光生载流子复合的缺陷,采用不同物质的量浓度的HNO3活化三聚氰胺前驱体,通过形成质子化氨基基团,制备了一系列x-HNO3-g-C3N4(x=1,2,3,4,5 mol·L^-1)光催化剂。采用N2物理吸附-脱附、X射线粉末衍射(XRD)、扫描电镜(SEM)、透射电镜(TEM)、X射线光电子能谱(XPS)、荧光光谱(PL)、紫外-可见漫反射光谱(UV-Vis DRS)、瞬态光电流响应谱(TCS)和电化学阻抗图谱(EIS)等测试手段对上述光催化剂进行了表征分析,以考察催化剂的结构与其光催化性能之间的影响作用规律。以罗丹明B(RhB)为模拟染料污染物,分别以x-HNO3-g-C3N4和直接煅烧三聚氰胺得到的g-C3N4为光催化剂,进行了可见光催化降解活性差异性能测试研究。由实验结果可知:3 mol·L^-1-HNO3-g-C3N4的光催化活性最高,相较于直接煅烧三聚氰胺得到的g-C3N4,在60 min内,其可将RhB的降解率从38%提高到99%。将3 mol·L^-1-HNO3-g-C3N4催化剂循环使用4次后,催化效果仍为99%。这是因为三聚氰胺前驱体经HNO3活化后,可使经热聚合制备而成的g-C3N4产品具有较高的聚合度,从而得到具有大比表面积的多层g-C3N4;此外,PL结果证明其荧光强度明显降低,而使载流子寿命获得了显著提高;EIS结果表明其载流子传输能力有了明显的增强,从而提高了g-C3N4的光催化活性。     

g-C3N4/BiVO4复合光催化剂的合成及其光催化活性研究

以g-C_3N_4和BiVO_4为主要原料,用高温水热法合成出BiVO4/g-C_3N_4复合催化剂。采用X-射线衍射(PXRD)和紫外-可见漫反射吸收光谱(UV-Vis),对复合催化剂BiVO_4/g-C_3N_4的结构进行表征。在可见光下,考察此复合催化剂对亚甲基蓝的降解性能。研究发现,复合催化剂具有g-C_3N_4和BiVO_4结构特征,在X-射线衍射峰上显示出轻微的宽化,质量比为10%的BiVO_4/g-C_3N_4光催化剂降解活性最好,其降解率在360分钟能达到70.6%。     

Z型光催化剂Sb2WO6/g-C3N4的制备及光催化性能

通过水热反应合成了Sb₂WO₆改性的g-C₃N₄复合材料(Sb₂WO₆ /g-C₃N₄). 通过X射线衍射(XRD)、 扫描电子显微镜(SEM)、 紫外-可见漫散射反射光谱(UV-Vis DRS)和光致发光光谱(PL)等表征了样品的性质. 结果表明, Sb₂WO₆在g-C₃N₄的表面上生长, 并且复合材料光吸收能力有一定的增强, 光生电子-空穴的重组率降低. 通过罗丹明B(RhB)的光降解评价了Sb₂WO₆/g-C₃N₄复合材料的光催化性能. 结果表明, 模拟日光下Sb₂WO₆质量分数为10%的Sb₂WO₆/g-C₃N₄复合材料在60 min内对RhB的降解率为99.3%, 高于纯g-C₃N₄和Sb₂WO₆. Sb₂WO₆/g-C₃N₄复合材料的这种高度增强的光催化活性主要归因于强的界面相互作用促进了光生电子-空穴分离和迁移. 添加自由基清除剂的实验结果表明, ·O^2-和h⁺是光催化反应中的主要活性物质. Sb₂WO₆/g-C₃N₄复合材料在几个反应周期内表现出优异的稳定性. 根据实验结果提出了一种可能的Z型光催化机理.     

ZnIn2S4/g-C3N4复合材料的制备及可见光催化制氢性能

采用水热方法制备了ZnIn₂S₄/g-C₃N₄复合材料, 并通过X射线衍射(XRD)、 傅里叶变换红外光谱(FTIR)、 紫外-可见漫反射光谱(UV-Vis DRS)、 透射电子显微镜(TEM)和荧光光谱(PL)等手段对其结构和性能进行表征. 结果表明, 当ZnIn₂S₄的负载量为20%(质量分数)时, 复合材料表现出最佳的光催化制氢性能, 制氢速率可达到637.08 μmol·g^-1·h^-1, 分别为纯ZnIn₂S₄和纯g-C₃N₄的4倍和37倍. 其原因在于ZnIn₂S₄和g-C₃N₄之间具有紧密的异质结结构, 两者有效的结合改善了组分的能带匹配和界面电荷转移, 从而大幅增强了载流子的分离和迁移, 进而提高光催化的性能.     

基于g-C3N4的Z型光催化体系研究进展

导电聚合物型光催化材料g-C₃N₄有着独特的电子结构、稳定的化学性能和显著的可见光催化活性。基于g-C₃N₄的Z型光催化体系(Z-g-C₃N₄)的催化效率高、电子-空穴复合率低而备受关注,在光催化领域展现出了巨大的应用潜力。本文阐述了Z-g-C₃N₄型光催化反应体系的作用机理,综述了Z-g-C₃N₄在光催化领域的研究进展,介绍了Z-g-C₃N₄在产氢、转化CO₂、降解有机物等光催化领域的应用,讨论了pH值、导电介质等因素对Z-g-C₃N₄光催化性能的影响。最后指出了Z-g-C₃N₄光催化体系在研究过程中面临的问题和研究方向。     

Cu2+改性g-C3N4光催化剂的光催化性能

Photocatalytic technology can effectively solve the problem of increasingly serious water pollution, the core of which is the design and synthesis of highly efficient photocatalytic materials. Semiconductor photocatalysts are currently the most widely used photocatalysts. Among these is graphitic carbon nitride (g-C₃N₄), which has great potential in environment management and the development of new energy owing to its low cost, easy availability, unique band structure, and good thermal stability. However, the photocatalytic activity of g-C₃N₄ remains low because of problems such as wide bandgap, weakly absorb visible light, and the high recombination rate of photogenerated carriers. Among various modification strategies, doping modification is an effective and simple method used to improve the photocatalytic performance of materials. In this work, Cu/g-C₃N₄ photocatalysts were successfully prepared by incorporating Cu²⁺ into g-C₃N₄ to further optimize photocatalytic performance. At the same time, the structure, morphology, and optical and photoelectric properties of Cu/g-C₃N₄ photocatalysts were analyzed by X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), scanning electron microscopy, UV-Vis diffuse reflectance spectroscopy (DRS), and photoelectric tests. XRD and XPS were used to ensure that the prepared photocatalysts were Cu/g-C₃N₄ and the valence state of Cu was in the form of Cu²⁺. Under visible light irradiation, the photocatalytic activity of Cu/g-C₃N₄ and pure g-C₃N₄ photocatalysts were investigated in terms of the degradation of RhB and CIP by comparing the amount of introduced copper ions. The experimental results showed that the degradation ability of Cu/g-C₃N₄ photocatalysts was stronger than that of pure g-C₃N₄. The N₂ adsorption-desorption isotherms of g-C₃N₄ and Cu/g-C₃N₄ demonstrated that the introduction of copper had little effect on the microstructure of g-C₃N₄. The small difference in specific surface area indicates that the enhanced photocatalytic activity may be attributed to the effective separation of photogenerated carriers. Therefore, the enhanced photocatalytic degradation of RhB and CIP over Cu/g-C₃N₄ may be due to the reduction of carrier recombination rate by copper. The photoelectric test showed that the incorporation of Cu²⁺ into g-C₃N₄ could reduce the electron-hole recombination rate of g-C₃N₄ and accelerate the separation of electron-hole pairs, thus enhancing the photocatalytic activity of Cu/g-C₃N₄. Free radical trapping experiments and electron spin resonance indicated that the synergistic effect of superoxide radicals (O₂^•−), hydroxyl radicals (•OH) and holes could increase the photocatalytic activity of Cu/g-C₃N₄ materials.     

新颖CdMoO4/g-C3N4复合材料的制备及其可见光增强的电荷分离和光催化活性（英文）

半导体光催化技术因其能够完全矿化和降解废水以及废气中的各种有机和无机污染物而受到越来越多研究者关注.尽管TiO2作为光催化剂显示了良好的应用前景,但其只对紫外光响应,该部分能量大约仅占太阳光谱的5%,从而限制了其实际应用.因此,开发新型可见光响应光催化剂成为光催化领域的研究焦点之一.石墨相氮化碳(g-C3N4)作为一种光催化材料,由于具有良好的热和化学稳定性以及可见光响应而备受关注.然而,单纯的g-C3N4由于光生电荷载流子易复合,光催化效果并不理想.为进一步提高g-C3N4的光催化活性,构建g-C3N4基异质结复合光催化材料被认为是增强g-C3N4光生电子-空穴分离效率的有效方法.CdMoO4作为一种光催化材料,与g-C3N4匹配的能带有利于光生电子-空穴的分离,从而提高g-C3N4的光催化活性.本文通过便利的原位沉淀-煅烧过程,制备了新颖的CdMoO4/g-C3N4异质复合光催化材料.复合材料的晶相构成、形貌、表面化学组分和光学特性等通过相应的分析测试手段进行表征.光催化活性通过可见光下催化降解罗丹明B水溶液来评价.结果显示,将CdMoO4沉积在g-C3N4表面形成复合材料可明显提高光催化活性,且当CdMoO4含量为4.8 wt%时达到最佳的光催化活性.这种显著增强的光催化活性可能是由于CdMoO4/g-C3N4复合物能够有效地传输和分离光生电荷载流子,从而抑制了光生电子-空穴的复合.电化学阻抗、瞬态光电流和稳定荧光光谱测试结果证实,通过CdMoO4与g-C3N4复合可有效增强电荷分离效率.此外,活性物捕获实验表明,在光催化过程中空穴(h+)和超氧自由基(?O2?)是主要活性物种.根据莫托-肖特基实验并结合紫外-可见漫反射吸收光谱,得到了单纯g-C3N4和CdMoO4的能带结构,提出了形成的II型异质结有助于增强光催化活性的机理.     

Ni2P-NiS双助剂促进g-C3N4光催化产氢动力学

本文通过简单的一步水热法得到Ni₂P-NiS双助催化剂,之后采用溶剂蒸发法将Ni₂P-NiS与g-C₃N₄纳米片结合构建获得无贵金属的Ni₂P-NiS/g-C₃N₄异质结。研究结果表明,优化后的复合材料具有良好的光催化产氢活性,其产氢速率最高可到6892.7 μmol·g^-1·h^-1,分别为g-C₃N₄ (150 μmol·g^-1·h^-1)、15%NiS/g-C₃N₄ (914.5 μmol·g^-1·h^-1)和15%Ni₂P/g-C₃N₄ (1565.9 μmol·g^-1·h^-1)的46.1、7.5和4.4倍。这主要归因于Ni₂P-NiS相比Ni₂P和NiS单体具有更好的载流子转移能力,其与g-C₃N₄形成的肖特基势垒能有效促进光生载流子在二者界面上的分离,同时Ni₂P-NiS能进一步降低析氢过电势,进而显著增强了表面析氢反应动力学。本研究为开发稳定、高效的非贵金属产氢助剂提供了实验基础。     

具有高效界面电荷转移的0D/2D Bi4V2O11/g-C3N4梯形异质结的设计合成及抗生素降解性能研究

随着工业技术的飞速发展,大量有机污染物被应用于生活的各个领域,由此带来了严重的环境问题。众所周知,半导体光催化技术是一种有效且环境友好的降解去除典型污染物的方法,而光催化剂在该技术的应用中起着关键作用。因此,在光催化污染物降解领域,人们已经尝试研究了各种半导体材料。其中石墨相氮化碳(g-C₃N₄)是近年来公认的“明星”材料之一。因其独特的二维层状结构和良好的可见光响应而引起了人们的极大兴趣。由于带隙较窄(~2.7 eV)、能带结构可调以及良好的物理化学稳定性,g-C₃N₄对太阳光谱的吸收可达450 nm,具有一定的可见光光催化性能。然而,g-C₃N₄在去除抗生素和染料方面的降解效率仍然存在不足,例如光生电荷的快速复合以及空穴的氧化能力弱等。为了优化这种有前景的光催化材料,人们尝试了多种方法来改善g-C₃N₄的电子能带结构,例如金属/非金属元素掺杂、形貌调控和官能团修饰等。最近,人们提出了由两种N型半导体光催化剂组成的梯形异质结理念,它可以利用半导体材料更正的价带和更负的导带。相关结果表明,构筑梯形异质结是提高g-C₃N₄光催化活性的最有效方法之一。因此,本文通过简单的原位溶剂热生长法制备了新型0D/2D Bi₄V₂O₁₁/g-C₃N₄梯形异质结光催化剂。Bi₄V₂O₁₁/g-C₃N₄复合材料对去除土霉素(OTC)和活性红染料展示出了优异的光催化活性。尤其是BVCN-50复合材料对OTC和活性红的降解效率高达74.1%和84.2%,该过程的主要活性物种为·O₂^-。大幅增强的光催化性能归因于Bi₄V₂O₁₁和g-C₃N₄之间形成的梯形异质结保持了光催化体系的强氧化还原能力(Bi₄V₂O₁₁的强氧化能力和g-C₃N₄的强还原能力),并促进了光生电荷的空间分离。此外,金属Bi⁰的表面等离子共振效应可以拓宽异质结系统的光吸收范围。此外,基于高效液相色谱-质谱联用(LC-MS)分析,我们研究了OTC降解过程中可能的中间体和降解路径。这项工作为设计和制备g-C₃N₄基梯形异质结用于抗生素和活性染料降解提供了一种新的策略。     

Pt-M (M = Co,Ni, Fe)/g-C3N4复合材料构建及其高效光解水制氢性能

Platinum (Pt) is recognized as an excellent cocatalyst which not only suppresses the charge carrier recombination of the photocatalyst but also reduces the overpotential for photocatalytic H₂ generation. Albeit of its good performance, the high cost and low abundance restricted the utilization of Pt in large-scale photocatalytic H₂ generation. Pt based transition metal alloys are demonstrated to reveal enhanced activities towards various catalytic reactions, suggesting the possibility to substitute Pt as the cocatalyst. In the present work, Pt was partially substituted with Co, Ni, and Fe and Pt-M (M = Co, Ni, and Fe)/g-C₃N₄ composites were constructed through co-reduction of H₂PtCl₆ and transition metal salts by the reductant of ethylene glycol. The crystal structure and valence states were measured by X-ray diffractometer (XRD) and X-ray photoelectron spectrometer (XPS), respectively. The higher degree of XRD peaks and larger binding energies for Pt 4f_5/2 and Pt 4f_7/2 after incorporating Co²⁺ ions indicated that Co was successfully introduced into the lattice of Pt and Pt-Co bimetallic alloys was attained through the solvothermal treatment. The morphology was subsequently observed by transmission electron microscope (TEM), which showed a good dispersion of Pt-Co nanoparticles on the surface of g-C₃N₄. Meanwhile, the shrinkage of lattice fringe after introducing cobalt salt further confirmed the presence of Pt-Co bimetallic alloys. The UV-Vis absorption spectra of g-C₃N₄ and Pt, Pt-Co deposited g-C₃N₄ were subsequently performed. It was found that the absorption edges were all consistent for all three samples as anticipated, implying that the band gap energy was maintained after hybridizing with Pt or Pt-Co alloys. Furthermore, the photocatalytic H₂ generation was carried out over the as-prepared composites with triethanolamine (TEOA) as sacrificial reagent. Under visible-light illumination, the1% (w) Pt_2.5M/g-C₃N₄ (M = Co, Fe, Ni) composites all exhibited higher or comparable activity towards photocatalytic H₂ generation when compared to 1% (w) Pt loaded counterpart. In addition, the atomic ratios of Pt/Co and the loading amount of Pt-Co cocatalyst were modified to optimize the photocatalytic performance, among which, 1% (w) Pt_2.5Co/g-C₃N₄ composite revealed the highest activity with a 1.6-time enhancement. Electrochemical impedance spectra (EIS) and photoluminescence (PL) spectra indicated that the enhancement might be attributed to improved charge transfer from g-C₃N₄ to Pt_2.5Co cocatalyst and inhibited charge carrier recombination in the presence of Pt_2.5Co cocatalyst. Therefore, the present study demonstrates the great potential to partially replace Pt with low-cost and abundant transition metals and to fabricate Pt based bimetallic alloys as promising cocatalysts for highly efficient photocatalytic H₂ generation.     

Heterostructured Nitrogen and Sulfur co-Doped Black TiO2/g-C3N4 Photocatalyst with Enhanced Photocatalytic Activity

Conventional titanium dioxide(TiO₂) photocatalyst could absorb only ultraviolet light due to its wide bandgap. In this paper, black TiO₂ with narrow bandgap was prepared by introducing oxygen vacancies. Meanwhile, nitrogen(N) and sulfur(S) elements were doped to further broaden the visible light response range of TiO₂(NS-BT), and then heterostructured N,S-doped black TiO₂/g-C₃N₄(CN/NS-BT) was successfully constructed by easily accessible route. The formation of CN/NS-BT heterojunction structure increased the generation and separation efficiency of photogenerated electron-hole pairs, as well as accelerated the transfer rate of the carriers. The as-prepared CN/NS-BT exhibited excellent photocatalytic performance towards the degradation of Rhodamine B(RhB) under visible light irradiation with satisfactory stability. The apparent reaction rate constant of CN/NS-BT(0.0079) was 15.8-fold higher than that of commercial P25(0.0005). The structure, morphology, chemical composition and optical properties of the as-prepared CN/NS-BT were characterized by various analytical methods, and possible photocatalytic enhancement mechanism was proposed. Overall, CN/NS-BT composites look promising as photocatalytic material for future environmental treatment.     

In-situ Construction of Sulfur-doped g-C3N4/defective g-C3N4 Iso-type Step-scheme Heterojunction for Boosting Photocatalytic H2 Evolution

The rational construction of a high-efficiency stepscheme heterojunctions is an effective strategy to accelerate the photocatalytic H₂.Unfortunately,the variant energy-level matching between two different semiconductor confers limited the photocatalytic performance.Herein,a newfangled graphitic-carbon nitride(g-C₃N₄)based isotype step-scheme heterojunction,which consists of sulfur-doped and defective active sites in one microstructural unit,is successfully developed by in-situ polymerizing N,N-dimethylformamide(DMF)and urea,accompanied by sulfur(S)powder.Therein,the polymerization between the amino groups of DMF and the amide group of urea endows the formation of rich defects.The propulsive integration of S-dopants contributes to the excellent fluffiness and dispersibility of lamellar g-C₃N₄.Moreover,the developed heterojunction exhibits a significantly enlarged surface area,thus leading to the more exposed catalytically active sites.Most importantly,the simultaneous introduction of S-doping and defects in the units of g-C₃N₄ also results in a significant improvement in the separation,transfer and recombination efficiency of photo-excited electron-hole pairs.Therefore,the resulting isotype step-scheme heterojunction possesses a superior photocatalytic H₂ evolution activity in comparison with pristine g-C₃N₄.The newly afforded metal-free isotype step-scheme heterojunction in this work will supply a new insight into coupling strategies of heteroatoms doping and defect engineering for various photocatalytic systems.