共查询到20条相似文献,搜索用时 218 毫秒
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首先介绍了集成电路TCAD虚拟工厂系统Taurus Workbench,基于CMOS工艺的特点,在TaurusWorkbench环境下进行了深亚微米级N沟器件的核心参数优化,优化结果印证了新的工艺条件对器件特性的改善。 相似文献
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根据数模混合集成电路系统级和行为级快速验证的需求,设计了一种卫星导航系统射频接收机前端的频率合成器。传统行为级模型一般是基于理想环路进行参数提取,误差较大。为此,首先,分别利用MATLAB和Verilog-AMS对频率合成器建立理想行为级模型与非理想行为级模型,并根据行为级模型提取与优化的环路参数,采用SMIC 180 nm CMOS工艺设计仿真电路级频率合成器;其次,建立MATLAB噪声模型,对电路级各个模块的噪声进行拟合,评估频率合成器系统的整体噪声性能。所提出的频率合成器设计方法对电路级设计具有前瞻性的指导,并有助于电路级的设计优化。 相似文献
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用于亚微米CMOS的轻掺杂漏工艺 总被引:1,自引:0,他引:1
本文研究了轻掺杂漏工艺对器件特性的影响。优化了轻掺杂区离子注入的剂量和能量。优化的SiO2侧墙LDD工艺有效地抑制了短沟道效应。研制成功了沟道长度为0.5μm的CMOS27级环振电路,门延迟为170ns. 相似文献
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遗传BP神经网络在正交试验最优化中的应用 总被引:1,自引:0,他引:1
神经网络建模和遗传算法优化是求解工程优化问题的一种行之有效的方法。将其与正交试验法结合起来,利用遗传BP神经网络建立正交试验的教学模型,使多因素多位级的试验效率大大增强,同时使试验结果得到优化。对肉豆蔻的CO2超临界萃取工艺的条件配置进行了优化。 相似文献
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基于IBM 0.18 μm SiGe BiCMOS工艺,提出了一种用于Ku波段相控阵雷达的高线性度低噪声放大器。该放大器采用2级级联结构,第1级优化可获得最小的噪声性能,第2级优化可提高电路的增益和线性输出功率。为了提高线性度,第2级采用了具有线性补偿功能的线性化偏置电路。仿真结果表明,在中心频率为16.5 GHz,带宽为2 GHz的频带范围内,噪声系数小于3.9 dB,其最小值为3.22 dB,功率增益大于23.5 dB,输出1-dB压缩点在中心频率处大于6.5 dBm。在3.3 V电源电压下,静态功耗为66 mW,芯片面积为(1 245×580) μm2。 相似文献
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This paper presents the computational study of fluid/structure interaction (FSI) analysis in the molding process using the Mesh-based parallel Code Coupling Interface (MpCCI) method with finite volume coding (FLUENT 6.3) and finite element coding (ABAQUS 6.9). The FSI analysis is implemented on the molded package during the encapsulation process with different inlet pressures. Real-time flow visualization, deformation and stress of the silicon die during the encapsulation process are presented in this paper. A fluctuation phenomenon of the silicon die is found in the encapsulation process when the inlet pressure increases. The maximum deformation during the process is determined at different locations on the silicon die, calculated during the final stage of the filling process. The deformation and stress of the die is exponentially increased with increasing inlet pressure. The maximum stress on the solder bump is concentrated near to the inlet gate. Thus, the present FSI analysis approach is expected to be a guideline or reference and provides better understanding of the encapsulation process for package design in the microelectronic industry. 相似文献
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With applications in current semiconductor manufacturing, the characteristics of nitride films were investigated for the optimization of pre-metal dielectric (PMD) linear nitride process. For the purpose of this study, the deposit condition of nitride films was divided into four areas such as protected overcoat (PO) nitride process, baseline process, low hydrogen process, and low hydrogen process with high stress, respectively. The correlation between boro-phospho-silicate-glass (BPSG) depositions and their densification was also examined and Fourier transform infrared spectroscopy (FTIR) area method was used to analyze the change of Si-H and Si-NH-Si bonding density. In addition, the generation of cracks on the wafer edge was evaluated after BPSG densification. The stress changes of nitride film as a function of radio frequency (RF) power variation were used to determine the quality of the deposited films. Resultantly, the low hydrogen process was recommended as an optimized condition for linear PMD nitride film. 相似文献
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In this article, a case of Spin-on-Glass (SOG) process-induced tungsten residue was reported. The case was found after the tungsten etchback process of filling vias. A possible failure mechanism was proposed. Based on the review of our process flow, it is believed that the tungsten residue might result from the hydrodynamic effects of SOG. 相似文献
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介绍了GaAs MMIC(GaAs microwave monolithic integrated circuit)工艺运用监测技术控制工艺过程,实时掌握工艺状况,保证产品的一致性、可重复性和可靠性。针对薄层电阻和接触电阻的阻值以及器件的栅阻和栅长等工艺过程中关键的参数,分别用范德堡结构、开尔文结构和十字桥结构进行监测。采用范德堡结构测得薄层电阻Rs=(π/ln 2)V14/I23,开尔文结构得到接触电阻Rc=V13/I24,十字桥结构可以了解栅阻和栅长。然后通过运用统计过程控制技术对数据进行分析,可以有效改进工艺,提高产品质量。 相似文献
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表面发射光子晶体DFB激光器 总被引:1,自引:0,他引:1
光子晶体(PC)具有周期性折射率变化,并具有实现新型光器件的极大潜力,正受到广泛关注。本文介绍了PC基本原理与特性,并介绍了表面发射(SE)光子晶体分布反馈(DFB)半导体激光器的结构、最佳化设计、制作工艺和输出特性。 相似文献
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研究了利用虚拟子载波抑制OFDM系统PAPR及其算法简化的问题.通过对虚拟子载波技术迭代过程进行简化,得到了运算量只是系统子载波数量级的低复杂度迭代算法,减小了算法实现的复杂度.计算机仿真表明,通过增大虚拟子载波数量或迭代次数,可使系统PAPR性能在一定范围内得到明显改善.由于不用传输边带信息,系统具有较强的可靠性和抗干扰能力. 相似文献