USB、RS232/RS422接口转换电路的设计

由于USB接口正逐步替代传统的RS232接口成为PC机的标准接口,USB接口转换电路的设计就很有必要。采用Silicon公司高集成度的USB-UART桥接器件CP2102,辅以简单的外部电路,实现了RS232/RS422接口与USB接口转换电路的设计。其中在详细介绍CP2102结构和特性的基础上,给出了接口转换的硬件电路图,最后简单介绍了转换器的工作原理。     

一种实用光端机的设计与实现

提出了一种简易的实用光端机的设计方法,能够完成TTL/E1、RS232、RS422 3类信号经光纤传送,很好地实现了中短距离的点对点通信.TTL/E1信号直接送给通道选择,RS232和RS422分别经过相应的信号调理变为,TTL电平后再送给通道选择模块:通道选择由可编程逻辑器件GAL16V8为核心编程实现,通过按键操作可实现传输信号的类型选择,并有相应的指示灯指示:采用安捷伦公司的LED组件光发送模块HFBR-1528扣光接收模块HFBR-2528作为核心器件,实现光纤通信.通过实验证明,系统工作可靠,性能优越.     

USB接口的虚拟仪器设计与实现

针对虚拟仪器开发平台LabWindows/CVI中不提供直接支持USB接口函数库的情况,首先进行RS232和USB的接口转换,然后再利用CVI中RS232的函数库对USB进行数据读写,从而在LabWindows/CVI中实现USB通讯.     

基于CH341A的USB串口通讯设计

为解决当前计算机串行通讯接口只有USB,难以满足旧型号设备或某些单片机要求RS232通讯的问题,设计出两款RS232/USB电路.采用CH341A与MAX223集成电路芯片构建标准9线RS232/USB通用接口转换嚣,无需缟程.采用CH341A与PIC16F877A构建单片机与计算机之间的USB通讯电路,软件遵循RS2...     

接口技术在AIS中的应用探讨

通过分析通导设备AIS船舶自动识别系统终端的接口技术,比较了串行接口RS232和RS422,得出RS422优于RS232的结论。然后针对领航员接口的应用问题,给出三个解决方案。     

AVR软USB接口在数据采集系统中应用

利用AVR单片机ATmega8软USB虚拟RS232接口技术,通过单片机内置A/D转换器对模拟量数据采集,取代以RS232标准接口模拟量数据采集器。利用现有软件资源,实现USB软接口多点模拟量数据采集功能。硬件电路简单、性能稳定可靠。解决了传统的RS232接口数据采集器诸多问题。在设计AVR软USB接口固件（ATmega8单片机程序）时,USB接口参数配置按USB-isp（同样是AVR软USB虚拟RS232接口）下载线设置;并在PC机系统中安装其虚拟串口驱动程序。能支持PC机WIN7和XP等操作系统。     

一种可编程多协议接口芯片设计与实现

基于0.18μｍBCD工艺，设计了一款可编程多协议串行接口芯片，该芯片采用数字和模拟混合信号芯片设计技术，实现了可编程协议选择、4通道收发器、三态控制、单电源、高速传输、ESD、电荷泵等功能，测试结果表明:可支持RS232、RS422、RS485等多种协议，ESD满足抗±15ｋＶ人体静电能力,RS-232传输速率不低于120ｋｂｙｔｅ/ｓ，RS-422传输速率不低于 10Ｍｂｙｔｅ/ｓ，已经通过设计、仿真、流片、封装、测试、验证，成功应用于多型产品中。     

USB—RS232转换卡的设计与实现

与RS232总线的数据传输速率相比,USB的传输速率高达480Mb／s,因此很多计算机的RS232串行接口都被USB接Kr所替换,但是很多仪器仪表、控制终端、远程终端等设备的接口还是沿用RS232。为解决两个接口之间的转换,设计并研制了USB-RS232接口转换卡。从USB和RS232通信协议出发,详细介绍USB-RS232转换卡的设计原理,并以CH341T芯片为例,设计并制作了USB-RS232转换卡。利用研制的USB-RS232转换卡连接具有RS232接口的温湿度传感器,在运行监控程序后,传感器运行稳定,能正确显示温湿度数据,且表明该转换卡可成功地实现RS232接口与USB接口的转换。     

基于FT2232H 的 USB-RS232转换模块设计

鉴于大量外围设备和软件使用RS232串口标准,为了充分利用USB的传输速度快,连接简单快捷,即插即用等优势,给出一种采用第5代USB-to-UART-FIFO器件FT2232H设计USB-RS232转换器的方案.详细介绍FT2232H的主要特点、内部结构及功能原理,给出USB/UART RS232接口电路设计和驱动软件.与其他设计方案相比,该系统设计具有数据传输速率快,可配置2个RS232接口等优点.     

光纤传输RS232/RS485信号的CPLD实现

基于CPLD设计一个转换系统,对RS232/RS485信号进行QDPSK调制,并转换成光信号,利用光纤进行传输,实现了RS232/RS485的远距离通信。通过实验测试和现场运行结果来看,本系统性能良好,可以作为一种RS232/RS485远距离通信的解决方案。     

Development of the readout system for waveguide multilayer optical card

Waveguide multilayer optical card （WMOC） is a novel storage device of three-dimensional optical information. An advanced readout system fitting for the WMOC is introduced in this paper. The hardware mainly consists of the light source for reading, WMOC, motorized stages addressing unit, microscope imaging unit, CCD detecting unit and PC controlling ＆ processing unit. The movement of the precision motorized stage is controlled by the computer through Visual Basic （VB） language in software. A control panel is also designed to get the layer address and the page address through which the position of the motorized stages can be changed. The WMOC readout system is easy to manage and the readout result is directly displayed on computer monitor.     

Nanoimprint Lithography -A Next Generation High Volume Lithography Technique

IntroductionNanoimprint Lithography is a well-acknowl-edged low cost, high resolution, large area pattern-ing process. It includes the most promising methods,high-pressure hot embossing lithography (HEL) [2],UV-cured imprinting (UV-NIL) [3] and micro contactprinting (m-CP, MCP) [4]. Curing of the imprintedstructures is either done by subsequent UV-lightexposure in the case of UV-NIL or by cooling downbelow the glass transition temperature of the ther-moplastic material in case of HEL…     

Collinear phase-matching study of terahertz-wave generation via difference frequency mixed in GaAs and Inp

The collinearly phase-matching condition of terahertz-wave generation via difference frequency mixed in GaAs and InP is theoretically studied. In collinear phase-matching, the optimum phase-matching wave hands of these two crystals are calculated. The optimum phase-matching wave bands in GaAs and lnP are 0.95-1.38μm and 0.7-0.96μm respectively. The influence of the wavelength choice of the pump wave on the coherent length in THz-wave tuning is also discussed. The influence of the temperature alteration on the phase-matching and the temperature tuning properties in GaAs crystal are calculated and analyzed. It can serve for the following experiments as a theoretical evidence and a reference as well.     

Effects of the alloy compositions on the phonon-polaritons in ternary mixed crystals

Composition dependence of bulk and surface phonon-polaritons in ternary mixed crystals are studied in the framework of the modified random-element-isodisplacement model and the Bom-Huang approximation. The numerical results for Several Ⅱ - Ⅵ and Ⅲ- Ⅴ compound systems are performed, and the polariton frequencies as functions of the compositions for ternary mixed crystals AlxGa1-xAs, GaPxAS1-x, ZnSxSe1-x, GaAsxSb1-x, GaxIn1-xP, and ZnxCd1-xS as examples are given and discussed. The results show that the dependence of the energies of two branches of bulk phonon-polaritons which have phonon-like characteristics, and surface phonon-polaritons on the compositions of ternary mixed crystals are nonlinear and different from those of the corresponding binary systems.     

Influence of PVK ： NPB hole transporting layer on the characteristics of organic light-emitting devices

A doping system consisting of NPB and PVK is employed as a composite hole transporting layer （CHTL）. By adjusting the component ratio of the doping system, a series of devices with different concentration proportion of PVK ： NPB are constracted. The result shows that doping concentration of NPB enhances the competence of hole transporting ability, and modifies the recombination region of charge as well as affects the surface morphology of doped film. Optimum device with a maximum brightness of 7852 cd/m^2 and a power efficiency of 1.75 lm/W has been obtained by choosing a concentration proportion of PVK ： NPB at 1：3.     

New insert layer structure OLEDs

An insert layer structure organic electroluminescent device（OLED） based on a new luminescent material （Zn（salen）） is fabricated. The configuration of the device is ITO/CuPc/NPD/Zn（salen）/Liq/LiF/A1/CuPc/NPD/Zn（salen）/Liq/LiF/A1. Effective insert electrode layers comprising LiF（1nm）/Al（5 nm） are used as a single semitransparent mirror, and bilayer cathode LiF（1 nm）/A1（100 nm） is used as a reflecting mirror. The two mirrors form a Fabry-Perot microcavity and two emissive units. The maximum brightness and luminous efficiency reach 674 cd/m^2 and 2.652 cd/A, respectively, which are 2.1 and 3.7 times higher than the conventional device, respectively. The superior brightness and luminous efficiency over conventional single-unit devices are attributed to microcavity effect.     

Analysis of error performance on Turbo coded FDPIM

Due to variable symbol length of digital pulse interval modulation（DPIM）, it is difficult to analyze the error performances of Turbo coded DPIM. To solve this problem, a fixed-length digital pulse interval modulation（FDPIM） method is provided. The FDPIM modulation structure is introduced. The packet error rates of uncoded FDPIM are analyzed and compared with that of DPIM. Bit error rates of Turbo coded FDPIM are simulated based on three kinds of analytical models under weak turbulence channel. The results show that packet error rate of uncoded FDPIM is inferior to that of uncoded DPIM. However, FDPIM is easy to be implemented and easy to be combined, with Turbo code for soft-decision because of its fixed length. Besides, the introduction of Turbo code in this modulation can decrease the average power about 10 dBm, which means that it can improve the error performance of the system effectively.     

A method for calculating the center position of collimated light

It is a key problem to accurately calculate beam spots＇ center of measuring the warp by using a collimated laser. A new method, named double geometrical center method （DGCM）, is put forward for the first time. In this method, a plane wave perpendicularly irradiates an aperture stop, and a charge couple device （CCD） is employed to receive the diffraction-beam spots, then the geometrical centers of the fast and the second diffraction-beam spots are calculated respectively, and their mean value is regarded as the center of datum beam. In face of such adverse instances as laser intension distributing defectively, part of the image being saturated, this method can still work well. What＇s more, this method can detect whether an unacceptable error exits in the courses of image receiving, processing and calculating. The experimental results indicate the precision of this method is high.     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.