Thermodynamic Analysis of Urea Physical Vapour Transport

The vaporisation-condensation scheme of urea has been investigated in the temperature region below the melting point, in order to establish the thermodynamic reactions on which the physical vapour transport (PVT) of urea is based. By making use of both reported data and experimental results of MS, DTA, DTG, and HPLC analysis, it was shown that PVT relevant reactions are basically molecular sublimation and partial decomposition in solid biuret and ammonia. MS analysis of urea crystals and source residues have also shown that no decomposition can be observed in the growing crystals, unless reheated during growth. The temperature dependence of the decomposition pressure has been found to be: log₁₀P_NH3 [torr] = 38 – 13840/T [K]. The use of this relation in diffusive mass transport calculations brought to linear growth rate values not in disagreement with the experimental values found in closed tube PVT grown crystals.     

Optical,Electrical and Morphological Studies of SnSe2 Crystals Grown by Physical Vapour Transport Method

Tin diselenide single crystals have been grown by the physical vapour transport (PVT) method. Optical absorption studies give an indirect allowed transition at 1.03 eV at room temperature. The electrical resistivity parallel and perpendicular to c-axis, mobility and carrier concentration have been determined. Dependence of resistivity parallel to c-axis on temperature gives an activation energy of 0.072 eV. Growth spirals observed for the first time on the as grown faces of these crystals are also presented here.     

Modified Growth of Mercuric Iodide Crystals from the Vapour Phase

The Hgl₂ single crystal with shiny natural crystal planes, low density of dislocation, and 350 g in weight has been grown by a new technique of modified vapoir phase located point method. The perfection and nuclear spectroscopic performance of the grown crystals are also studied.     

Cu单晶的生长与温场研究

Cu单晶在中子单色器、激光核聚变和音频信号传输等方面有着广泛的应用前景.根据对Cu晶体的差热分析结果,设计并制作了硅钼棒加热单晶生长炉,获得了适合Cu单晶体生长的温场.采用改进的垂直布里奇曼法成功生长出外观完整、表面光滑、尺寸为15 mm×35 mm的Cu单晶体.对生长的晶体进行切割、抛光腐蚀后,采用金相显微镜和X射线衍射分析,结果表明:研究设计的温场适合Cu单晶体的生长,生长出的晶体结晶性好、结构完整.     

Heat and Mass Transport Computation at the Sublimation Growth of SiC

Steady‐state heat and mass transport at the SiC growth process are computed by the general‐purpose finite‐element package FIDAP^TM. Specific features are the radiation exchange in several cavities at temperatures up to 2700 K and concentration dependent Stefan velocities resulting from sublimation/condensation at the vapour‐solid interfaces. The article describes the computational procedure in order to achieve convergence of the temperature and velocity field. The transport rate of the SiC building species meets the range of experimental results.     

Vapour growth and morphology of PbBr2 crystals

In this paper, the vapour transport of PbBr₂ under vacuum during vacuum distillation refining and its condensation on the wall of the vessel were described. The macro‐ and micro morphologies of PbBr₂ crystals grown in the vessel (glass tube) were studied. The crystal shape changed dramatically depending on the positions of condensation in the vessel, i.e., the crystal shape varied from an isometric polyhedron to columnar crystals with facets, and to a massive crystal without facets with a rise in the wall temperature. These results were interpreted in terms of the concentration gradient of the molecules in the vessel, surface roughening and/or surface melting of the crystals. (© 2007 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Electron Microscopy and X-ray Study of the Growth of FeCr2S4 Spinel Single Crystals by Chemical Vapour Transport

The growth features of FeCr₂S₄ spinel single crystals prepared by chemical vapour transport were studied by means of scanning electron microscopy, transmission electron microscopy, high resolution electron microscopy, electron diffraction and X-ray analysis. Our results indicate that the epitaxial growth of the new phases FeCr₇S₁₂ and FeCr₈S₁₂, both based on the NiAs structure, can essentially inhibit the growth of large FeCr₂S₄ spinel single crystals in the octahedral habit. The new phases are fully characterised and the effects of defect ordering in these new phases are also reported.     

耐辐射优质石英晶体的生长

在水热条件下,我们利用三次再结晶的方法,生长了耐辐射优质石英晶体。随着再结晶次数的增加,晶体中的杂质浓度和缺陷浓度明显降低,晶体的耐辐射性能明显提高。     

熔体法生长大尺寸有机晶体

大尺寸有机晶体在太赫兹波产生、中子探测、微波激射等多个关系国计民生、涉及国家安全的领域具有重要应用前景.但大尺寸有机单晶生长一直是国际公认的难题,无论是在生长理论、生长方法还是生长设备方面都远远落后,在整个人工晶体领域相对小众;而且有机晶体硬度低、脆性高、易解理等本征特性为加工和后期应用带来了很多困难,制约了相关领域的...     

水热法生长无色BSO晶体

采用不同方法制备的培养料,进行了Bi12SiO20(BSO)晶体的水热生长实验.其中以高纯三氧化二铋,二氧化硅为原料,使用铂坩埚烧制成的玻璃体为培养料,5 mol/L的NaOH溶液作为矿化剂溶液,黄金衬管作为反应场所,采用二次水热生长的方法,获得尺寸为10×10×6 mm3的无色BSO晶体.晶体的显露面主要为(001)和(110).讨论了不同方法制备的培养料对晶体呈色的影响,并测量了晶体的截至边.     

单质直接气相生长ZnMgSe单晶

采用高纯Zn、Mg、Se2单质为原料,以NH4Cl作为反应输运剂,用化学气相输运(CVT)的方法一步成功生长出ZnMgSe单晶。通过XRD、RO-XRD、EDS、紫外可见分光光度计和光致发光(PL)技术研究了ZnMgSe晶体的结构、成份以及光学特性。结果表明:ZnMgSe单晶具有良好的结晶性能,在400～800 nm范围内透过率达到40%～50%,在2.2～2.6 eV范围内存在与深能级电子复合相关的发光带。研究证明由Zn、Mg、Se2单质在输运剂NH4Cl辅助下一步直接合成ZnMgSe单晶是可行的。     

Growth of Sapphire Crystals of Complicated Shape

An original apparatus allows the growth of sapphire single crystals with complicated forms. Edge-defined Film-fed Growth (EFG) or Stepanov method, Growth from an Element of Shape (GES) method, as well as imaginative combined variants of those processes are available with this equipment. Related to the growth parameters, the quality of the crystals pulled from the melt is investigated in terms of minor gas bubbles distribution and misorientation. X-ray transmission, optical microscopy together with light transmittance measurements are the tools to make sure of optical applications for those products.     

优质立方六面体金刚石大单晶的生长研究

高温高压静压触媒法合成的金刚石单晶,往往呈现六八面体形貌,因为立方六面体单晶{100}面的生长区间相对较小.本研究利用高温高压温度梯度法,自制Fe-Ni合金触媒,通过对合成组装和工艺进行合理调整后,控制晶体在相对低温适合{100}面生长区域内生长,得到的晶体均呈现完整立方六面体形貌;同时为抑制包裹体和其他杂质的进入,人为的提高晶体的径向平铺生长速度,抑制其轴向生长速度.以在33 h内合成的优质立方六面体晶体为例,晶体最大方向尺寸达到7.3 mm,重1.2克拉,其径向生长速度达到0.22 mm/h,轴向生长速度仅为0.08 mm/h,增重速度为7.3 mg/h.     

Growth Kinetics and Mechanism of TGS Crystals

The growth kinetics of TGS crystals was studied at high supersaturations under the Curie temperature. The kinetics data proved that the crystal growth was mainly controlled by BCF surface diffusion model. The continuous growth was fitted to the growth rate data of (110) face. Its edge energy, Jackson factor, activity energies, kinetic coefficients were calculated.     

铌酸锂晶体的生长研究

近年来,铌酸锂晶体由于其自身所具有的多种优异性能和巨大的应用前景而受到了人们的广泛关注,但生长出满足不同市场要求的高质量铌酸锂单晶体比较困难.本文从晶体生长技术的角度综述了铌酸锂单晶体不同的生长方法以及各自的特点,并分析了在生长铌酸锂晶体时出现的一些问题.     

KTi1-xSnxOPO4晶体生长及其物理性质的研究

采用熔盐法生长了一系列磷酸氧钛锡钾单晶体并测定了其晶体结构和相应的物理性质，发现在该类型晶体中随着四价阳离子Sn对Ti的掺杂替代导致晶胞参数增大，铁电相变温度降低和非线性光学特性减弱，同时发现在居里温度附近，一些晶体出现类似快离子导体特性的电导率跃迁。     

NaCo2O4晶体的生长,形貌和生长机理研究（英文）

采用自发成核方法,以NaCl-Na2CO3为助熔剂,生长了毫米级的NaCo2O4晶体。通过X射线衍射对晶体作了表征。利用扫描电子显微镜和原子力显微镜研究了晶体的形貌和生长机理。结果表明:所得晶体是NaCo2O4,属于六方晶系,晶胞参数:a=b=0.2842 nm,c=1.0894 nm,V=0.0761997 nm3。NaCo2O4晶体是沿c轴层状生长的,同时从阴离子配位多面体的角度分析了晶体的形貌。     

Growth of Barium Cerate Crystals from BaCl2 Solution

Barium cerate crystals of 1.5 mm diameter could be grown from melt solutions containing barium chloride, barium oxide (from thermolysis of barium carbonate), and cerium(IV) oxide. The maximum size of the crystals is limited by the low solubility of cerium(IV) oxide in the barium chloride melt (ca. 0.1 Mol%). The flux can be removed by leaching the melt with water. Acid solutions must not be used to avoid decomposition of the barium cerate crystals. Neither congruent melting or incongruent decomposition of the BaCeO₃ crystals could be found up to 1580 degrees centigrade.     

ZnGeP2晶体的合成与生长

采用双温区法合成ZnGeP2多晶料;采用布里奇曼法生长ZnGeP2单晶,晶体尺寸为22×90 mm2.晶体透光范围0.7～12.0 μm,平均透过率达到56;;OPO光参量震荡器件尺寸6×6×15 mm3,采用2 μm的泵浦光,产生4 W以上的3.8～4.5 μm激光输出.