Dual‐Phase All‐Inorganic Cesium Halide Perovskites for Conducting‐Bridge Memory‐Based Artificial Synapses

Neuromorphic computing, which mimics biological neural networks, can overcome the high‐power and large‐throughput problems of current von Neumann computing. Two‐terminal memristors are regarded as promising candidates for artificial synapses, which are the fundamental functional units of neuromorphic computing systems. All‐inorganic CsPbI₃ perovskite‐based memristors are feasible to use in resistive switching memory and artificial synapses due to their fast ion migration. However, the ideal perovskite phase α‐CsPbI₃ is structurally unstable at ambient temperature and rapidly degrades to a non‐perovskite δ‐CsPbI₃ phase. Here, dual‐phase (Cs₃Bi₂I₉)_0.4?(CsPbI₃)_0.6 is successfully fabricated to achieve improved air stability and surface morphology compared to each single phase. Notably, the Ag/polymethylmethacrylate/(Cs₃Bi₂I₉)_0.4?(CsPbI₃)_0.6/Pt device exhibits non‐volatile memory functions with an endurance of ≈10³ cycles and retention of ≈10⁴ s with low operation voltages. Moreover, the device successfully emulates synaptic behavior such as long‐term potentiation/depression and spike timing/width‐dependent plasticity. This study will contribute to improving the structural and mechanical stability of all‐inorganic halide perovskites (IHPs) via the formation of dual phase. In addition, it proves the great potential of IHPs for use in low‐power non‐volatile memory devices and electronic synapses.     

Enhanced On–Off Ratio Photodetectors Based on Lead‐Free Cs3Bi2I9 Single Crystal Thin Films

Hybrid organic–inorganic lead halide perovskite single crystal thin film (SCTF) recently has attracted enormous interest in the field of optoelectronic devices, since it efficiently resolves the trade‐off between thickness and carrier diffusion length. However, the toxicity of lead element and the instability induced by organic component still hinder its future developments. In this work, lead‐free all‐inorganic Cs₃Bi₂I₉ SCTF with a high orientation along (00h) has been in situ grown on indium tin oxide (ITO) glass via a space‐limited solvent evaporation crystallization method. The trap density of Cs₃Bi₂I₉ SCTF (5.7 × 10¹² cm^?3) is 263 folds lower than that of the polycrystalline thin film (PCTF) counterpart, together with a 5‐order‐of‐magnitude higher carrier mobility. These superior charge transfer properties enable a photoresponse on–off ratio as high as 11 000, which far surpasses that of the PCTF device by 460 folds, comparable to the lead halide perovskite. Furthermore, the Cs₃Bi₂I₉ SCTF photodetector exhibits outstanding stability even without any encapsulation, whose initial performance is well maintained after aging 1000 h in humid air of 50% RH or continuous on–off light illumination for 20 h. This work will pave the way to produce new families of high‐performance, stable, and nontoxic perovskite SCTF for future optoelectronic applications.     

All‐Inorganic Bismuth‐Based Perovskite Quantum Dots with Bright Blue Photoluminescence and Excellent Stability

Lead halide perovskite quantum dots (QDs) possess color‐tunable and narrow‐band emissions and are very promising for lighting and display applications, but they suffer from lead toxicity and instability. Although lead‐free Bi‐based and Sn‐based perovskite QDs (CsSnX₃, Cs₂SnX₆, and (CH₃NH₃)₃Bi₂X₉) are reported, they all show low photoluminescence quantum yield (PLQY) and poor stability. Here, the synthesis of Cs₃Bi₂Br₉ perovskite QDs with high PLQY and excellent stability is reported. Via a green and facile process using ethanol as the antisolvent, as‐synthesized Cs₃Bi₂Br₉ QDs show a blue emission at 410 nm with a PLQY up to 19.4%. The whole series of Cs₃Bi₂X₉ (X = Cl, Br, and I) QDs by mixing precursors can cover the photoluminescence emission range from 393 to 545 nm. Furthermore, Cs₃Bi₂Br₉ QDs show excellent photostability and moisture stability due to the all‐inorganic nature and the surface passivation by BiOBr, which enables the one‐pot synthesis of Cs₃Bi₂Br₉ QD/silica composite. A lead‐free perovskite white light‐emitting diode is fabricated by simply combining the composite of Cs₃Bi₂Br₉ QD/silica with Y₃Al₅O₁₂ phosphor. As a new member of lead‐free perovskite QDs, Cs₃Bi₂Br₉ QDs open up a new route for the fabrication of optoelectronic devices due to their excellent stability and photophysical characteristics.     

Air‐Stable Cesium Lead Iodide Perovskite for Ultra‐Low Operating Voltage Resistive Switching

CsPbX₃ (X = halide, Cl, Br, or I) all‐inorganic halide perovskites (IHPs) are regarded as promising functional materials because of their tunable optoelectronic characteristics and superior stability to organic–inorganic hybrid halide perovskites. Herein, nonvolatile resistive switching (RS) memory devices based on all‐inorganic CsPbI₃ perovskite are reported. An air‐stable CsPbI₃ perovskite film with a thickness of only 200 nm is successfully synthesized on a platinum‐coated silicon substrate using low temperature all‐solution process. The RS memory devices of Ag/polymethylmethacrylate (PMMA)/CsPbI₃/Pt/Ti/SiO₂/Si structure exhibit reproducible and reliable bipolar switching characteristics with an ultralow operating voltage (<+0.2 V), high on/off ratio (>10⁶), reversible RS by pulse voltage operation (pulse duration < 1 ms), and multilevel data storage. The mechanical flexibility of the CsPbI₃ perovskite RS memory device on a flexible substrate is also successfully confirmed. With analyzing the influence of phase transition in CsPbI₃ on RS characteristics, a mechanism involving conducting filaments formed by metal cation migration is proposed to explain the RS behavior of the memory device. This study will contribute to the understanding of the intrinsic characteristics of IHPs for low‐voltage resistive switching and demonstrate the huge potential of them for use in low‐power consumption nonvolatile memory devices on next‐generation computing systems.     

Organic–Inorganic Perovskite Light‐Emitting Electrochemical Cells with a Large Capacitance

While perovskite light‐emitting diodes typically made with high work function anodes and low work function cathodes have recently gained intense interests. Perovskite light‐emitting devices with two high work function electrodes with interesting features are demonstrated here. Firstly, electroluminescence can be easily obtained from both forward and reverse biases. Secondly, the results of impedance spectroscopy indicate that the ionic conductivity in the iodide perovskite (CH₃NH₃PbI₃) is large with a value of ≈10^?8 S cm^?1. Thirdly, the shift of the emission spectrum in the mixed halide perovskite (CH₃NH₃PbI_3?xBr_x) light‐emitting devices indicates that I^? ions are mobile in the perovskites. Fourthly, this work shows that the accumulated ions at the interfaces result in a large capacitance (≈100 μF cm^?2). The above results conclusively prove that the organic–inorganic halide perovskites are solid electrolytes with mixed ionic and electronic conductivity and the light‐emitting device is a light‐emitting electrochemical cell. The work also suggests that the organic–inorganic halide perovskites are potential energy‐storage materials, which may be applicable in the field of solid‐state supercapacitors and batteries.     

Photoresponsive Transistors Based on Lead‐Free Perovskite and Carbon Nanotubes

Lead‐free perovskite materials are exhibiting bright application prospects in photodetectors (PDs) owing to their low toxicity compared with traditional lead perovskites. Unfortunately, their photoelectric performance is constrained by the relatively low charge conductivity and poor stability. In this work, photoresponsive transistors based on stable lead‐free bismuth perovskites CsBi₃I₁₀ and single‐walled carbon nanotubes (SWCNTs) are first reported. The SWCNTs significantly strengthen the dissociation and transportation of the photogenerated charge carriers, which lead to dramatically improved photoresponsivity, while a decent I_light/I_dark ratio over 10² can be maintained with gate modulation. The devices exhibit high photoresponsivity (6.0 × 10⁴ A W^?1), photodetectivity (2.46 × 10¹⁴ jones), and external quantum efficiency (1.66 × 10⁵%), which are among the best reported results in lead‐free perovskite PDs. Furthermore, the excellent stability over many other lead‐free perovskite PDs is demonstrated over 500 h of testing. More interestingly, the device also shows the application potential as a light‐stimulated synapse and its synaptic behaviors are demonstrated. In summary, the lead‐free bismuth perovskite‐based hybrid phototransistors with multifunctional performance of photodetection and light‐stimulated synapse are first demonstrated in this work.     

Dual Passivation of Perovskite Defects for Light‐Emitting Diodes with External Quantum Efficiency Exceeding 20%

Solution‐processed metal halide perovskites (MHPs) have attracted much attention for applications in light‐emitting diodes (LEDs) due to their wide color gamut, high color purity, tunable emission wavelength, balanced electron/hole transportation, etc. Although MHPs are very tolerant to defects, the defects in solution‐processed perovskite LEDs (PeLEDs) still cause severe nonradiative recombination and device instability. Here, molecular design of additives for dual passivation of both lead and halide defects in perovskites is reported. A bi‐functional additive, 4‐fluorophenylmethylammonium‐trifluoroacetate (FPMATFA), is synthesized by using a simple solution process. The TFA anions and FPMA cations can bond with undercoordinated lead and halide ions, respectively, resulting in dual passivation of both lead and halide defects. In addition, the bulky FPMA group can constrain the grain growth of 3D perovskite, enhancing electron–hole capture rates and radiative recombination rates. As a result, high‐performance PeLEDs with a peak external quantum efficiency reaching 20.9% and emission wavelength at 694 nm are achieved using formamidinium‐cesium lead iodide‐bromide (FA_0.33Cs_0.67Pb(I_0.7Br_0.3)₃). Furthermore, the operational lifetime of PeLEDs is also greatly improved due to the low trap density in the perovskite film.     

Octadecylamine‐Functionalized Single‐Walled Carbon Nanotubes for Facilitating the Formation of a Monolithic Perovskite Layer and Stable Solar Cells

Organic–inorganic lead halide perovskites have shown great future for application in solar cells owing to their exceptional optical and electronic properties. To achieve high‐performance perovskite solar cells, a perovskite light absorbing layer with large grains is desirable in order to minimize grain boundaries and recombination during the operation of the device. Herein, a simple yet efficient approach is developed to synthesize perovskite films consisting of monolithic‐like grains with micrometer size through in situ deposition of octadecylamine functionalized single‐walled carbon nanotubes (ODA‐SWCNTs) onto the surface of the perovskite layer. The ODA‐SWCNTs form a capping layer that controls the evaporation rate of organic solvents in the perovskite film during the postthermal treatment. This favorable morphology in turn dramatically enhances the short‐circuit current density of the perovskite solar cells and almost completely eliminates the hysteresis. A maximum power conversion efficiency of 16.1% is achieved with an ODA‐SWCNT incorporated planar solar cell using (FA_0.83MA_0.17)_0.95Cs_0.05Pb(I_0.83Br_0.17)₃ as light absorber. Furthermore, the perovskite solar cells with ODA‐SWCNT demonstrate extraordinary stability with performance retention of 80% after 45 d stability testing under high humidity (60–90%) environment. This work opens up a new avenue for morphology manipulation of perovskite films and enhances the device stability using carbon material.     

Scalable All‐Evaporation Fabrication of Efficient Light‐Emitting Diodes with Hybrid 2D–3D Perovskite Nanostructures

Quasi‐2D (Q2D) lead halide perovskites have emerged as promising materials for light‐emitting diodes (LEDs) due to their tunable emission, slowed‐down carrier diffusion, and improved stability. However, they are primarily fabricated through solution methods, which hinders its large‐scale manufacture and practical applications. Physical‐vapor‐deposition (PVD) methods have well demonstrated the capability for reproducible, scalable, and layer‐by‐layer fabrication of high quality organic/inorganic thin films. Herein, for the first time, the full‐evaporation fabrication of organic–inorganic hybrid ((BA)₂Cs_n?1Pb_nBr_3n+1) Q2D–3D PeLEDs is demonstrated. The morphology and crystal phase of the perovskite are controlled from 3D to 2D by modulating material composition, annealing temperature, and film thicknesses. The confinement of carriers in 3D layers and the energy funnel effect are discovered and discussed. Importantly, a record high external quantum efficiency (EQE) of 5.3% based on evaporation method is achieved. Moreover, a centimeter‐scale PeLED (1.5 cm × 2 cm) is obtained. Furthermore, the T₅₀ lifetime of the device with an initial brightness of 100 cd m^?2 is found to be 90 min with a thin layer PMMA passivation, which is among the longest for all PVD processed PeLEDs. Overall, this work casts a solid stepping stone towards the fabrication of high‐performance PeLEDs on a large‐scale.     

Quasi‐2D Inorganic CsPbBr3 Perovskite for Efficient and Stable Light‐Emitting Diodes

Metal halide perovskites are rising as a competitive material for next‐generation light‐emitting diodes (LEDs). However, the development of perovskite LEDs is impeded by their fast carriers diffusion and poor stability in bias condition. Herein, quasi‐2D CsPbBr₃ quantum wells homogeneously surrounded by inorganic crystalline Cs₄PbBr₆ of large bandgap are grown. The centralization of carriers in nanoregion facilitates radiative recombination and brings much enhanced luminescence quantum yield. The external quantum efficiency and luminescence intensity of the LEDs based on this nanocomposite are one order of magnitude higher than the conventional low‐dimensional perovskite. Meanwhile, the use of inorganic nanocomposite materials brings much improved device operation lifetime under constant electrical field.     

Thermochromic Lead‐Free Halide Double Perovskites

Lead‐free halide double perovskites with diverse electronic structures and optical responses, as well as superior material stability show great promise for a range of optoelectronic applications. However, their large bandgaps limit their applications in the visible light range such as solar cells. In this work, an efficient temperature‐derived bandgap modulation, that is, an exotic fully reversible thermochromism in both single crystals and thin films of Cs₂AgBiBr₆ double perovskites is demonstrated. Along with the thermochromism, temperature‐dependent changes in the bond lengths of Ag? Br (R_{Ag? Br}) and Bi? Br (R_{Bi? Br}) are observed. The first‐principle molecular dynamics simulations reveal substantial anharmonic fluctuations of the R_{Ag? Br} and R_{Bi? Br} at high temperatures. The synergy of anharmonic fluctuations and associated electron–phonon coupling, and the peculiar spin–orbit coupling effect, is responsible for the thermochromism. In addition, the intrinsic bandgap of Cs₂AgBiBr₆ shows negligible changes after repeated heating/cooling cycles under ambient conditions, indicating excellent thermal and environmental stability. This work demonstrates a stable thermochromic lead‐free double perovskite that has great potential in the applications of smart windows and temperature sensors. Moreover, the findings on the structure modulation‐induced bandgap narrowing of Cs₂AgBiBr₆ provide new insights for the further development of optoelectronic devices based on the lead‐free halide double perovskites.     

Materials Discovery of Stable and Nontoxic Halide Perovskite Materials for High‐Efficiency Solar Cells

Two critical limitations of organic–inorganic lead halide perovskite materials for solar cells are their poor stability in humid environments and inclusion of toxic lead. In this study, high‐throughput density functional theory (DFT) methods are used to computationally model and screen 1845 halide perovskites in search of new materials without these limitations that are promising for solar cell applications. This study focuses on finding materials that are comprised of nontoxic elements, stable in a humid operating environment, and have an optimal bandgap for one of single junction, tandem Si‐perovskite, or quantum dot–based solar cells. Single junction materials are also screened on predicted single junction photovoltaic (PV) efficiencies exceeding 22.7%, which is the current highest reported PV efficiency for halide perovskites. Generally, these methods qualitatively reproduce the properties of known promising nontoxic halide perovskites that are either experimentally evaluated or predicted from theory. From a set of 1845 materials, 15 materials pass all screening criteria for single junction cell applications, 13 of which are not previously investigated, such as (CH₃NH₃)_0.75Cs_0.25SnI₃, ((NH₂)₂CH)Ag_0.5Sb_0.5Br₃, CsMn_0.875Fe_0.125I₃, ((CH₃)₂NH₂)Ag_0.5Bi_0.5I₃, and ((NH₂)₂CH)_0.5Rb_0.5SnI₃. These materials, together with others predicted in this study, may be promising candidate materials for stable, highly efficient, and nontoxic perovskite‐based solar cells.     

Broadband Defects Emission and Enhanced Ligand Raman Scattering in 0D Cs3Bi2I9 Colloidal Nanocrystals

Excitonic 0D and 2D lead‐halide perovskites have been recently developed and investigated as new materials for light generation. Here broadband (>1 eV) emission from newly synthesized 0D lead‐free colloidal Cs₃Bi₂I₉ nanocrystals (NCs) is reported. The nature of their emissive states as well as the relative dynamics which are currently hotly debated are investigated. In particular, it is found that the broadband emission is made by the coexistence of emissive excitons and sub‐bandgap emissive trap‐states. Remarkably, evidence of enhanced Raman scattering from the ligands is observed when attached to the NCs surface, an effect that is preliminarily attributed to strong exciton‐ligands electronic coupling in these systems.     

Oriented Crystallization of Mixed‐Cation Tin Halides for Highly Efficient and Stable Lead‐Free Perovskite Solar Cells

As the most promising lead‐free branch, tin halide perovskites suffer from the severe oxidation from Sn²⁺ to Sn⁴⁺, which results in the unsatisfactory conversion efficiency far from what they deserve. In this work, by facile incorporation of methylammonium bromide in composition engineering, formamidinium and methylammonium mixed cations tin halide perovskite films with ultrahighly oriented crystallization are synthesized with the preferential facet of (001), and that oxidation is suppressed with obviously declined trap density. MA⁺ ions are responsible for that impressive orientation while Br^‐ ions account for their bandgap modulation. Depending on high quality of the optimal MA_0.25FA_0.75SnI_2.75Br_0.25 perovskite films, their device conversion efficiency surges to 9.31% in contrast to 5.02% of the control formamidinium tin triiodide perovskite (FASnI₃) device, along with almost eliminated hysteresis. That also results in the outstanding device stability, maintaining above 80% of the initial efficiency after 300 h of light soaking while the control FASnI₃ device fails within 120 h. This paper definitely paves a facile and effective way to develop high‐efficiency tin halide perovskites solar cells, optoelectronic devices, and beyond.     

Orientation Regulation of Tin‐Based Reduced‐Dimensional Perovskites for Highly Efficient and Stable Photovoltaics

Tin‐based perovskites have exhibited high potential for efficient photovoltaics application due to their outstanding optoelectrical properties. However, the extremely undesired instabilities significantly hinders their development and further commercialization process. A novel tin‐based reduced‐dimensional (quasi‐2D) perovskites is reported here by using 5‐ammoniumvaleric acid (5‐AVA⁺) as the organic spacer. It is demonstrated that by introducing appropriate amount of ammonium chloride (NH₄Cl) as additive, highly vertically oriented tin‐based quasi‐2D perovskite films are obtained, which is proved through the grazing incidence wide‐angle X‐ray scattering characterization. In particular, this approach is confirmed to be a universal method to deliver highly vertically oriented tin‐based quasi‐2D perovskites with various spacers. The highly ordered vertically oriented perovskite films significantly improve the charge collection efficiency between two electrodes. With the optimized NH₄Cl concentration, the solar cells employing quasi‐2D perovskite, AVA₂FA_n?1Sn_nI_3n+1 (<n> = 5), as light absorbers deliver a power conversion efficiency up to 8.71%. The work paves the way for further employing highly vertically oriented tin‐based quasi‐2D perovskite films for highly efficient and stable photovoltaics.     

Controlling the Intermediate Phase to Improve the Crystallinity and Orientation of Cs3Sb2ClxI9-x Films for Efficient Solar Cells

Lead-free 2D antimony-based halide perovskites with excellent optoelectronic properties, low toxicity, and good intrinsic stability are promising for photovoltaic devices. However, the power conversion efficiency (PCE) of antimony-based perovskite solar cells (PSCs) is still lower than 3% due to the poor crystallinity and random orientation. Herein, it is found that the Cs₃Sb₂Cl_xI_9-x films prepared by adding methylamine chloride as an additive to the precursor solution can form a mixed intermediate phase with 0D dimer phase and 2D layered phase after low pressure treatment. During the annealing process, the 0D dimer phase will completely transition to 2D layered phase due to the partial replacement of I by Cl. Compared to adding SbCl₃ directly, this method considerably increases the crystallinity of Cs₃Sb₂I_xCl_9-x films. The obtained films have a preferential orientation along the (201) direction, which is beneficial for charge carrier transportation. Consequently, the champion device shows a PCE of 3.2%, which is one of the highest efficiencies achieved for inorganic Sb-based PSCs with the n-i-p architecture to date.     

Compositional and Dimensional Control of 2D and Quasi‐2D Lead Halide Perovskites in Water

Blue light emitting two dimensional (2D) and quasi‐2D layered halide perovskites (LHPs) are gaining attention in solid‐state lighting applications but their fragile stability in humid condition is one of the most pressing issues for their practical applications. Though water is much greener and cost effective, organic solvents must be used during synthesis as well as the device fabrication process for these LHPs due to their water‐sensitivity/instability and consequently, water‐stable blue‐light emitting 2D and quasi‐2D LHPs have not been documented yet. Here, water‐mediated facile and cost‐effective syntheses, characterizations, and optical properties of 16 organic–inorganic hybrid compounds are reported including 2D (A′)₂PbX₄ (A′ = butylammonium, X = Cl/Br/I) (8 compounds), 3D perovskites (4), and quasi‐2D (A′)_pA_x?1B_xX_3x+1 LHPs (A = methylammonium) (4) in water. Here, both composition and dimension of LHPs are tuned in water, which has never been explored yet. Furthermore, the dual emissive nature is observed in quasi‐2D perovskites, where the intensity of two photoluminescence (PL) peaks are governed by 2D and 3D inorganic layers. The Pb(OH)₂‐coated 2D and quasi‐2D perovskites are highly stable in water even after several months. In addition, single particle imaging is performed to correlate structural–optical property of these LHPs.     

Light‐Responsive Ion‐Redistribution‐Induced Resistive Switching in Hybrid Perovskite Schottky Junctions

Hybrid Perovskites have emerged as a class of highly versatile functional materials with applications in solar cells, photodetectors, transistors, and lasers. Recently, there have also been reports on perovskite‐based resistive switching (RS) memories, but there remain open questions regarding device stability and switching mechanism. Here, an RS memory based on a high‐quality capacitor structure made of an MAPbBr₃ (CH₃NH₃PbBr₃) perovskite layer sandwiched between Au and indium tin oxide (ITO) electrodes is reported. Such perovskite devices exhibit reliable RS with an ON/OFF ratio greater than 10³, endurance over 10³ cycles, and a retention time of 10⁴ s. The analysis suggests that the RS operation hinges on the migration of charged ions, most likely MA vacancies, which reversibly modifies the perovskite bulk transport and the Schottky barrier at the MAPbBr₃/ITO interface. Such perovskite memory devices can also be fabricated on flexible polyethylene terephthalate substrates with high bendability and reliability. Furthermore, it is found that reference devices made of another hybrid perovskite MAPbI₃ consistently exhibit filament‐type switching behavior. This work elucidates the important role of processing‐dependent defects in the charge transport of hybrid perovskites and provides insights on the ion‐redistribution‐based RS in perovskite memory devices.     

Dual Emission of Water‐Stable 2D Organic–Inorganic Halide Perovskites with Mn(II) Dopant

Moisture‐delicate and water‐unstable organic–inorganic halide perovskites (OI‐HPs) create huge challenges for the synthesis of highly efficient water‐stable light‐emitting materials for optoelectronic devices. Herein, a simple acid solution–assisted method to synthesize quantum confined 2D lead perovskites through Mn doping is reported. The efficient energy transfer between host and dopant ions in orange light‐emitting Mn²⁺‐doped OI‐HPs leads to the most efficient integrated luminescence with a photoluminescence quantum yield over 45%. The Mn²⁺ substitution of Pb²⁺ and passivation with low dielectric constant molecules such as phenethylamine, benzylamine, and butylamine enhance water resistivity, leading to water stability. The dual emission process of this water‐stable 2D Mn‐doped perovskite will help in developing highly efficient 2D water‐stable perovskites for practical applications.     

High‐Performance Near‐IR Photodetector Using Low‐Bandgap MA0.5FA0.5Pb0.5Sn0.5I3 Perovskite

Photodetectors with ultrafast response are explored using inorganic/organic hybrid perovskites. High responsivity and fast optoelectronic response are achieved due to the exceptional semiconducting properties of perovskite materials. However, most of the perovskite‐based photodetectors exploited to date are centered on Pb‐based perovskites, which only afford spectral response across the visible spectrum. This study demonstrates a high‐performance near‐IR (NIR) photodetector using a stable low‐bandgap Sn‐containing perovskite, (CH₃NH₃)_0.5(NH₂CHNH₂)_0.5Pb_0.5Sn_0.5I₃ (MA_0.5FA_0.5Pb_0.5Sn_0.5I₃), which is processed with an antioxidant additive, ascorbic acid (AA). The addition of AA effectively strengthens the stability of Sn‐containing perovskite against oxygen, thereby significantly inhibiting the leakage current. Consequently, the derived photodetector shows high responsivity with a detectivity of over 10¹² Jones ranging from 800 to 970 nm. Such low‐cost, solution processable NIR photodetectors with high performance show promising potential for future optoelectronic applications.