Hot carrier degradation and a new lifetime prediction model in ultra-deep sub-micron pMOSFET

The hot carrier effect (HCE) of an ultra-deep sub-micron p-channel metal-oxide semiconductor field-effect transistor (pMOSFET) is investigated in this paper. Experiments indicate that the generation of positively charged interface states is the predominant mechanism in the case of the ultra-deep sub-micron pMOSFET. The relation of the pMOSFET hot carrier degradation to stress time (t), channel width (W ), channel length (L), and stress voltage (Vd ) is then discussed. Based on the relation, a lifetime prediction model is proposed, which can predict the lifetime of the ultra-deep sub-micron pMOSFET accurately and reflect the influence of the factors on hot carrier degradation directly.     

单轴应变硅nMOSFET栅隧穿电流模型

本文基于量子机制建立了单轴应变硅nMOSFET栅隧穿电流模型,分析了隧穿电流与器件结构参数、偏置电压及应力的关系.仿真分析结果与单轴应变硅nMOSFET的实验结果符合较好,表明该模型可行.同时与具有相同条件的双轴应变硅nMOSFET的实验结果相比,隧穿电流更小,从而表明单轴应变硅器件更具有优势.该模型物理机理明确,不仅适用于单轴应变硅nMOSFET,只要将相关的参数置换,该模型也同样适用于单轴应变硅pMOSFETs. 关键词： 单轴应变 nMOSFET 栅隧穿电流 模型     

p型金属氧化物半导体场效应晶体管界面态的积累对单粒子电荷共享收集的影响

由于负偏置温度不稳定性和热载流子注入,p型金属氧化物半导体场效应晶体管(pMOSFET)将在工作中不断退化,而其SiO₂/Si界面处界面态的积累是导致其退化的主要原因之一. 采用三维器件数值模拟方法,基于130 nm体硅工艺,研究了界面态的积累对相邻pMOSFET之间单粒子电荷共享收集的影响. 研究发现,随着pMOSFET SiO₂/Si界面处界面态的积累,相邻pMOSFET漏端的单粒子电荷共享收集量均减少. 还研究了界面态的积累对相邻反相器中单粒子电荷共享收集 关键词： 负偏置温度不稳定性 电荷共享收集 双极放大效应 单粒子多瞬态     

New insight into the parasitic bipolar amplification effect in single event transient production

In this paper, a new method is proposed to study the mechanism of charge collection in single event transient (SET) production in 90 nm bulk complementary metal oxide semiconductor (CMOS) technology. We find that different from the case in the pMOSFET, the parasitic bipolar amplification effect (bipolar effect) in the balanced inverter does not exist in the nMOSFET after the ion striking. The influence of the substrate process on the bipolar effect is also studied in the pMOSFET. We find that the bipolar effect can be effectively mitigated by a buried deep P⁺-well layer and can be removed by a buried SO₂ layer.     

应变SiGe p 型金属氧化物半导体场效应管栅电容特性研究

由于台阶的出现, 应变SiGe p型金属氧化物半导体场效应管 (pMOSFET) 的栅电容特性与体Si器件的相比呈现出很大的不同, 且受沟道掺杂的影响严重. 本文在研究应变SiGe pMOSFET器件的工作机理及其栅电容C-V 特性中台阶形成机理的基础上, 通过求解器件不同工作状态下的电荷分布, 建立了应变SiGe pMOSFET栅电容模型, 探讨了沟道掺杂浓度对台阶的影响. 与实验数据的对比结果表明, 所建立模型能准确反映应变SiGe pMOSFET器件的栅电容特性, 验证了模型的正确性. 该理论为Si基应变金属氧化物半导体(MOS)器件的设计制造提供了重要的指导作用, 并已成功应用于Si基应变器件模型参数提取软件中, 为Si基应变MOS的仿真奠定了理论基础. 关键词： 应变SiGe pMOSFET 栅电容特性 台阶效应 沟道掺杂     

高功率微波作用下热载流子引起n型金属-氧化物-半导体场效应晶体管特性退化研究

高功率微波(HPM)通过使半导体器件特性退化和功能失效,从而干扰电子系统无法正常工作. 针对金属氧化物半导体(MOS)器件的HPM效应, 建立了高功率微波引起n型金属氧化物半导体场效应晶体管(nMOSFET)特性退化的物理过程与模型. 器件仿真结果中nMOSFET的输出特性曲线显示栅极注入HPM引起器件特性退化,包括阈值电压正向漂移、 饱和电流减小、跨导减小等;结合物理模型分析可知, HPM引起的高频脉冲电压使器件进入深耗尽状态, 热载流子数目增多,热载流子效应导致器件特性退化. MOS器件的HPM注入实验结果显示,器件特性曲线、器件模型参数变化趋势与仿真结果一致, 验证了HPM引起nMOSFET特性退化的物理过程与模型.     

亚100 nm应变Si/SiGe nMOSFET阈值电压二维解析模型

本文基于二维泊松方程,建立了适用于亚100 nm应变Si/SiGe nMOSFET的阈值电压理论模型.为了保证该模型的准确性,同时考虑了器件尺寸减小所导致的物理效应,如短沟道效应,量子化效应等.通过将模型的计算结果与二维器件模拟器ISE的仿真结果进行对比分析,证明了本文提出的模型的正确性.最后,还讨论了亚100 nm器件中常规工艺对阈值电压的影响.该模型为亚100 nm小尺寸应变Si器件的分析设计提供了一定的参考. 关键词： 亚100nm 应变Si/SiGe nMOSFET 二维表面势 阈值电压     

n型金属氧化物半导体场效应晶体管噪声非高斯性研究

基于n型金属氧化物半导体场效应晶体管（nMOSFET）噪声的数涨落模型,采用高阶统计量双相干系数平方和研究了nMOSFET噪声的非高斯性.通过对nMOSFET实际测试噪声的分析,发现nMOSFET器件噪声存在非高斯性;小尺寸器件噪声的非高斯性强于大尺寸器件;在器件的强反型线性区,其非高斯性随着漏压的增加而增加.文中还通过蒙特卡罗模拟和中心极限定理理论对nMOSFET噪声的非高斯性作了深入的探讨. 关键词： 噪声 非高斯性 n型金属氧化物半导体场效应晶体管 氧化层陷阱     

Electrical characteristics of SiGe-on-insulator nMOSFET and SiGe-silicon-on-aluminum nitride nMOSFET

This paper investigates the electrical characteristics and temperature distribution of strained Si/SiGe n-type metal oxide semiconductor field effect transistor(nMOSFET) fabricated on silicon-on-aluminum nitride(SOAN) substrate.This novel structure is named SGSOAN nMOSFET.A comparative study of self-heating effect of nMOSFET fabricated on SGOI and SGSOAN is presented.Numerical results show that this novel SGSOAN structure can greatly eliminate excessive self-heating in devices,which gives a more promising application for silicon on insulator to work at high temperatures.     

应变绝缘层上硅锗p型金属氧化物场效应晶体管的阈值电压解析模型

分析研究了应变绝缘层上硅锗p型金属氧化物场效应晶体管(SGOI pMOSFET)的阈值电压模型,修正了应变作用下SGOI pMOSFET的能带模型,并提取了主要的物理参量.这些典型的参量包括禁带宽度、电子亲和能、内建势等.给出了应变硅SGOI pMOSFET内部电势分布的二维泊松方程,通过边界条件求解方程,得出了准确的阈值电压模型,并且验证了该模型的正确性.     

Ultrasonic Measurement of Sub-Micron Particles

Based on technology described in a Du Pont patent for an offline system, we have developed a prototype in-line ultrasonic cell for measuring particle size distribution. We have used this cell to verify the Allegra-Hawley model of ultrasonic attenuation in dilute (< 5 % vol) slurries of sub-micron ceramic particles, and we are developing a model that can cope with the multiple scattering effects occuring at higher concentrations. In this paper we present the results of attenuation measurements for ultrasound (2–50 MHz) in slurries with concentrations ranging from 0.5 010 to 38 010 (vol). The attenuation is proportional to slurry concentration up to 5 010 (vol) and is predicted by single scattering models. Above approximately 100% concentration, the attenuation is actually lower than expected. For the dilute slurries we find excellent agreement between our measurements and the Allegra-Hawley calculations, and the effects of the particle size distribution are evident in the ultrasonic attenuation spectrum. These ultrasonic data can be inverted to determine the particle size and concentration in aqueous slurries of sub-micron particles.     

Quantum-Mechanical Study on Surrounding-Gate Metal-Oxide-SemiconductorField-Effect Transistors

As the channel length of metal-oxide-semiconductor field-effect transistors (MOSFETs) scales into the nanometer regime, quantum mechanical effects arebecoming more and more significant. In this work, a model for thesurrounding-gate (SG) nMOSFET is developed. The Schrödinger equation issolved analytically. Some of the solutions are verified via results obtainedfrom simulations. It is found that the percentage of the electrons withlighter conductivity mass increases as the silicon body radius decreases, oras the gate voltage reduces, or as the temperature decreases. The centroidof inversion-layer is driven away from the silicon-oxide interface towardsthe silicon body, therefore the carriers will suffer less scattering fromthe interface and the electrons effective mobility of the SG nMOSFETs will be enhanced.     

电子显微镜散斑照相技术

提出了一种新颖的人工亚微米/纳米散斑制作技术.采用超声波分散亚微米/纳米颗粒,然后利用范德华力、静电力和毛细力将其吸附在试件表面.在特定分辨率的扫描电镜下,物体表面的亚微米/纳米颗粒可以看作是亚微米/纳米散斑.此外,发展了一种测量面内亚微米/纳米级变形的电子显微镜散斑照相技术.详细介绍了人工制作亚微米/纳米散斑和电子显微镜散斑照相技术,实验验证了技术的可行性     

高温高压下多环有机物合成亚微米金刚石

亚微米尺寸的金刚石粉末对超精细研磨抛光而言是非常理想的磨料,但高品质亚微米尺寸金刚石粉末的合成与制备到目前为止仍面临着许多的困难和挑战。在避免使用金属触媒的情况下,以萘为前驱体在11 GPa压强、1 700℃的温度条件下成功合成了高品质亚微米尺寸的金刚石粉末。所合成的金刚石粉末具有比较高的相纯度,金刚石晶粒普遍都是晶体形态发育良好且相互独立彼此分散的自形晶。晶粒粒度的频率分布属于正偏态分布,相应的平均值、中数及众数分别为158. 1,221. 5,262. 5 nm。对数正态分布拟合中,晶粒粒度的期望值和标准偏差分别为(243. 3±4. 2) nm和(122. 3±5. 4) nm。将近96%的晶粒都分布在亚微米尺寸范围内。本工作将为高品质亚微米尺寸金刚石粉末的合成与制备提供有效途径。     

The effect of substrate doping on the flatband and threshold voltages of a strained-Si pMOSFET

The effect of substrate doping on the flatband and threshold voltages of a strained-Si/SiGe p metal-oxide semiconductor field-effect transistor(pMOSFET) has been studied.By physically deriving the models of the flatband and threshold voltages,which have been validated by numerical simulation and experimental data,the shift in the plateau from the inversion region to the accumulation region as the substrate doping increases has been explained.The proposed model can provide a valuable reference to the designers of strained-Si devices and has been implemented in software for extracting the parameters of a strained-Si MOSFET.     

Effect of substrate doping on the flatband and threshold voltages of strained-Si pMOSFET

The effect of substrate doping on the flatband and threshold voltages of strained-Si/SiGe p metal-oxide semiconductor field-effect transistor (pMOSFET) has been studied. By physically deriving the models of the flatband and threshold voltages, which have been validated by numerical simulation and experimental data, the shift in the plateau from the inversion region to the accumulation region as the substrate doping increases has been explained. The proposed model can provide valuable reference to the designers of strained-Si devices and has been implemented in software for extracting the parameters of strained-Si MOSFET.     

Hot-Carrier Effects on Total Dose Irradiated 65 nm n-Type Metal-Oxide-Semiconductor Field-Effect Transistors

The influence of total dose irradiation on hot-carrier reliability of 65 nm n-type metal-oxide-semiconductor fieldeffect transistors(nMOSFETs) is investigated.Experimental results show that hot-carrier degradations on irradiated narrow channel nMOSFETs are greater than those without irradiation.The reason is attributed to radiation-induced charge trapping in shallow trench isolation(STI).The electric field in the pinch-off region of the nMOSFET is enhanced by radiation-induced charge trapping in STI,resulting in a more severe hot-carrier effect.     

多晶SiGe栅量子阱pMOSFET阈值电压模型

本文基于多晶SiGe栅量子阱SiGe pMOSFET器件物理,考虑沟道反型时自由载流子对器件纵向电势的影响,通过求解泊松方程,建立了p+多晶SiGe栅量子阱沟道pMOS阈值电压和表面寄生沟道开启电压模型.应用MATLAB对该器件模型进行了数值分析,讨论了多晶Si_1-yGe_y栅Ge组分、Si_1-xGe_x量子阱沟道Ge组分、栅氧化层厚度、Si帽层厚度、沟道区掺杂浓度和 关键词： 多晶SiGe栅 寄生沟道 量子阱沟道 阈值电压     

Micro-optical components based on silicon mold technology

Two micro-optical components fabricated by silicon molds are described. One component is micro-cavity in micro-scales and the other is sub-micron grating with a pitch of 200 nm. The feasibility of two methods for the micro-fabrication of the silicon molds is investigated: one method is for making hundreds of micrometer size silicon molds by using conventional photolithography and deep reactive ion etching (Deep-RIE) technique combined with wet etching; and the other is for fabricating sub-micron grating molds by using electron beam lithography and fast atom beam etching (FAB). Sub-wavelength structure is successfully transferred from silicon mold to poly-methyl methacrylate (PMMA) material. The yield and repeatability of the original master are quite good. This technique can also be used to fabricate other micro-scale structures.     

Reduced graphene oxide foils for ion stripping applications

ABSTRACT

Reduced graphene oxide (rGO) films can be employed as ion strippers in an accelerator. They show some advantages with respect to the graphite foils, due to their high thermal and electrical conductivity, low density, high mechanical resistance and high stability. Thin graphene oxide (GO) films with a sub-micron thickness have been synthesized and transformed into reduced GO (rGO) by ion beam irradiations. Physical characterizations of the pristine and ion irradiated GO films have been performed. Measurements of stripping efficiency have been carried out by using helium, lithium, carbon and oxygen ion beams. The rGO stripper films demonstrate a significantly high charge production, comparable to that of the graphite films but with the advantage of a longer lifetime.