含δ势垒的铁磁/半导体/铁磁异质结中的自旋输运和渡越时间

研究了含δ势垒的铁磁/半导体/铁磁异质结中自旋相关的透射概率和渡越时间,讨论了量子尺寸效应和Rashba自旋轨道耦合效应对隧穿特性的影响.研究结果表明：δ势垒的存在降低了自旋电子的透射概率,改变了透射概率的位相.Rashba自旋轨道耦合强度的增加加大了透射概率的振荡频率.不同自旋取向的电子隧穿异质结时,渡越时间随着半导体长度、Rashba自旋轨道耦合强度以及两铁磁电极中的磁化方向的夹角的变化而变化. 关键词： δ势垒')" href="#">δ势垒 铁磁/半导体/铁磁异质结 Rashba自旋轨道耦合效应 渡越时间     

多层结构双自旋过滤隧道结中的电子输运特性

在转移矩阵方法及Mireles和Kirczenow的量子相干输运理论的基础上,研究了正常金属层/磁性半导体层/非磁绝缘层/磁性半导体层/正常金属层型双自旋过滤隧道结中Rashba自旋轨道耦合效应和自旋过滤效应对自旋相关输运的影响.讨论了隧穿磁电阻（TMR）、隧穿电导与各材料层厚度、Rashba自旋轨道耦合强度以及两磁性半导体中磁矩的相对夹角θ之间的关系.研究表明：含磁性半导体层的双自旋过滤隧道结由于磁性半导体层的自旋过滤效应和Rashba自旋轨道耦合作用可获得极大的TMR值.另外TMR和隧穿电导随着Rashba自旋轨道耦合强度的变化而振荡,振荡周期随Rashba自旋轨道耦合强度的增大逐渐减小. 关键词： 双自旋过滤隧道结 Rashba自旋轨道耦合 隧穿磁电阻 隧穿电导     

铁磁/半导体/铁磁结构的双量子环自旋输运的特性

研究了与铁磁/半导体/铁磁结构相关的双量子环自旋输运的规律,研究结果表明：总磁通为零条件下,铁磁电极磁化方向反平行时,双量子环与单量子环相比提高了自旋电子透射概率的平均值.铁磁电极磁化方向平行时,双量子环对提高自旋向下电子平均透射概率的效果更明显;双量子环受到Rashba自旋轨道耦合作用影响时,自旋电子的平均透射概率明显高于单量子环,即使再加上外加磁场的影响,透射概率较高这一特征依然存在;双量子环所含的δ势垒具有阻碍自旋电子输运的作用,随δ势垒强度Z的增大透射概率 关键词： 双量子环 Rashba自旋轨道耦合 透射概率 δ势垒')" href="#">δ势垒     

对称抛物势阱磁性隧道结中的自旋输运及磁电阻效应

研究了两端具有铁磁接触的对称抛物势阱磁性隧道结(F/SPW/F)中自旋相关的隧穿概率和隧穿磁电阻,讨论了量子尺寸效应和Rashba 自旋轨道耦合作用对自旋极化输运特性的影响.研究结果表明:隧穿概率和隧穿磁电阻随抛物势阱宽度的增加发生周期性的振荡.抛物势阱深度的增加减小了隧穿概率和隧穿磁电阻的振荡频率.Rashba 自旋轨道耦合强度的增加加大了隧穿概率和隧穿磁电阻的振荡频率.隧穿概率和隧穿磁电阻的振幅和峰谷比强烈依赖于两铁磁电极中磁化方向的夹角. 关键词： 磁性隧道结 Rashba 自旋轨道耦合 隧穿概率 隧穿磁电阻     

自旋轨道耦合和磁场对准一维铁磁/半导体/铁磁系统中电子输运性质的影响

利用传递矩阵方法，我们计算了自旋轨道耦合和磁场对准一维铁磁/半导体/铁磁系统中电子输运性质的影响。计算结果发现，透射系数的振幅随磁场增加而增大。在反铁磁排列时，即使在磁场作用下，上、下自旋电子具有相同的透射系数。与不加磁场时的情况相反，在一定的磁场和耦合强度时，铁磁排列中，上自旋电子的透射系数大于下自旋电子的，而且出现了自旋反转。     

Rashba自旋-轨道耦合调制的单层半导体纳米结构中电子的自旋极化效应

利用现代材料生长技术纳米厚的半导体可以沿着良好的方向有序生长,形成层状半导体纳米结构.在这种半导体纳米结构中由于结构反演对称性破缺出现较强的自旋-轨道耦合,能有效消除半导体中电子的自旋简并,导致电子自旋极化效应,在自旋电子学领域中具有重要的应用.本文从理论上研究了单层半导体纳米结构中由Rashba型自旋-轨道耦合引起的电子自旋极化效应.由于Rashba型自旋-轨道耦合,相当强的电子自旋极化效应出现在该单层半导体纳米结构中.自旋极化率与电子的能量和平面内波矢有关,尤其是其可通过外加电场或半导体层厚度进行调控.因此,该单层半导体纳米结构可作为半导体自旋电子器件应用中的可控电子自旋过滤器.     

基于外尔半金属WTe2的自旋-轨道矩驱动磁矩翻转

外尔半金属WTe₂有强自旋轨道耦合且能产生新奇非常规面外极化的自旋流,是近几年的新兴热点.同时WTe₂还具有高的电荷-自旋转换效率,能在无外磁场辅助的情况下实现垂直磁矩确定性的翻转,这对于高密度集成低功耗磁随机存取存储器至关重要.本文回顾了近几年WTe₂与铁磁层组成异质结构中自旋轨道矩研究的最新进展,包括用不同方法制备的WTe₂ (例如机械剥离和化学气相沉积)与铁磁层(例如FeNi和CoFeB等)、二维磁体(例如Fe₃GeTe₂等)组成异质结的自旋轨道矩探测和磁矩翻转的电调控研究进展.最后,对相关研究的发展提出展望.     

δ势垒对多臂量子环中持续电流的影响

提出了含δ势垒的多臂量子环模型.研究发现总磁通为零时,持续电流随半导体环增大发生非周期性振荡,下臂因含δ势垒而获得最小的平均持续电流.AB磁通增强时,持续电流会发生周期性等幅振荡,并与电极的磁矩方向以及隧穿电子的自旋方向相关.两电极磁矩方向平行时,Rashba自旋轨道耦合具有改变持续电流相位和相位差的效应;两电极磁矩方向反平行时,Rashba自旋轨道耦合具有改变持续电流振幅的效应.各臂之间持续电流的不同与臂长和磁通分布的差异相关.在一定条件下,两种波函数所对应的持续电流是可分离的. 关键词： 多臂量子环 持续电流 δ势垒 Rashba自旋轨道耦合     

金属表面Rashba自旋轨道耦合作用研究进展

自旋轨道耦合是电子自旋与轨道相互作用的桥梁, 它提供了利用外电场来调控电子的轨道运动、进而调控电子自旋状态的可能. 固体材料中有很多有趣的物理现象, 例如磁晶各向异性、自旋霍尔效应、拓扑绝缘体等, 都与自旋轨道耦合密切相关. 在表面/界面体系中, 由于结构反演不对称导致的自旋轨道耦合称为Rashba自旋轨道耦合, 它最早在半导体材料中获得研究, 并因其强度可由栅电压灵活调控而备受关注, 成为电控磁性的重要物理基础之一. 继半导体材料后, 金属表面成为具有Rashba自旋轨道耦合作用的又一主流体系. 本文以Au(111), Bi(111), Gd(0001)等为例综述了磁性与非磁性金属表面Rashba自旋轨道耦合的研究进展, 讨论了表面电势梯度、原子序数、表面态波函数的对称性, 以及表面态中轨道杂化等因素对金属表面Rashba自旋轨道耦合强度的影响. 在磁性金属表面, 同时存在Rashba自旋轨道耦合作用与磁交换作用, 通过Rashba自旋轨道耦合可能实现电场对磁性的调控. 最后, 阐述了外加电场和表面吸附等方法对金属表面Rashba自旋轨道耦合的调控. 基于密度泛函理论的第一性原理计算和角分辨光电子能谱测量是金属表面Rashba自旋轨道耦合的两大主要研究方法, 本文综述了这两方面的研究结果, 对金属表面Rashba自旋轨道耦合进行了深入全面的总结和分析.     

热效应在电流驱动反铁磁/铁磁交换偏置场翻转中的显著作用

电流驱动的面内交换偏置场翻转具有无需外磁场辅助、抗磁场干扰以及强磁各向异性等优势,受到广泛关注.然而,在纳米级厚度薄膜系统中,反铁磁/铁磁异质结的阻塞温度较低,同时电流脉冲会产生大量的焦耳热,理论上电流热效应对于交换偏置场翻转有着显著作用,但是其作用机制缺乏相关研究和验证.我们制备了一系列反铁磁IrMn厚度不同的Pt/IrMn/Py异质结,系统性地研究了热效应在电流翻转交换偏置场中的作用机制.结果表明,在毫秒级电流脉冲下,焦耳热能够使得器件升温至阻塞温度以上,解除反铁磁/铁磁界面的交换耦合,同时电流产生的奥斯特场和自旋轨道矩能够翻转铁磁磁矩,在降温过程中完成交换偏置场的翻转.并且,在翻转过程中,反铁磁/铁磁异质结的各向异性磁阻曲线呈现与温度相关的两步磁化翻转现象,分析表明该现象起源于交换偏置耦合与铁磁直接交换作用之间的竞争关系.本文的研究结果厘清了热效应在电流驱动交换偏置场翻转过程中的重要作用,有助于推动基于电控交换偏置场的自旋电子器件发展.     

Spin transfer torque in the semiconductor/ferromagnetic structure in the presence of Rashba effect

Spin transfer torque in magnetic structure occurs when the transverse component of the spin current that flows from the nonmagnetic medium to ferromagnetic medium is absorbed by the interface. In this paper, considering the Rashba effect on the semiconductor region, we discuss the spin transfer torque in semiconductor/ferromagnetic structure and obtain the components of spin-current density for two models:(i) single electron and(ii) the distribution of electrons. We show that no matter whether the difference in Fermi surface between semiconductor and Fermi spheres for the up and down spins in ferromagnetic increases, the transmission probability decreases. The obtained results for the values used in this article illustrate that Rashba effect increases the difference in Fermi sphere between semiconductor and Fermi sphere for the up and down spins in ferromagnetic. The results also show that the Rashba effect, brings an additional contribution to the components of spin transfer torque, which does not exist in the absence of the Rashba interaction. Moreover, the Rashba term has also different effects on the transverse components of the spin torque transfer.     

Tunnel barrier and noncollinear magnetization effects on shot noise in ferromagnetic/semiconductor/ferromagnetic heterojunctions

Based on the scattering approach, we investigate transport properties of electrons in a one-dimensional waveguide that contains a ferromagnetic/semiconductor/ferromagnetic heterojunction and tunnel barriers in the presence of Rashba and Dresselhaus spin-orbit interactions. We simultaneously consider significant quantum size effects, quantum coherence, Rashba and Dresselhaus spin-orbit interactions and noncollinear magnetizations. It is found that the tunnel barrier plays a decisive role in the transmission coefficient and shot noise of the ballistic spin electron transport through the heterojunction. When the small tunnel barriers are considered, the transport properties of electrons are quite different from those without tunnel barriers.     

Spin-Tunneling Time in Ferromagnetic/Semiconductor/Ferromagnetic Three-Terminal Heterojunction in the Presence of Rashba Spin-Orbit Coupling

We study theoretically the transmission coefficients and the spin-tunneling time in ferromagnetic/semiconductor/ferromagnetic three-terminal heterojunction in the presence of Rashba spin-orbit interaction, in which onedimensional quantum waveguide theory is developed and applied. Based on the group velocity concept and the particle current conservation principle, we calculate the spin-tunneling time as the function of the intensity of Rashba spin-orbit coupling and the length of the semiconductor. We find that as the length of the semiconductor increases, the spintunneling time does not increase linearly but shows behavior of slight oscillation. Furthermore, with the increasing of the spin-orbit coupling, the spin-tunneling time increases.     

Effect of Rashba spin-orbit coupling on the spin-polarized transport in ferromagnet/semiconductor double tunnel junctions

Considering the Rashba spin-orbit interaction in the semiconductor, we study theoretically the spin-polarized transport in a two-dimensional ferromagnetic semiconductor double tunnel junctions by a quantum-mechanical approach. It is found that the transmission coefficient shows typical resonant transmission properties and the Rashba spin-orbit coupling has great different influences on the transmission coefficients of electrons with spin-up and down and tunnelling magnetoresistance (TMR). More importantly, the TMR is significantly enhanced by increasing the spin-orbit coupling, which is very useful for the designing of magnetic digital and memory sensor.     

Spin-Tunneling Time in Ferromagnetic/Semiconductor/Ferromagnetic Three-Terminal Heterojunction in the Presence of Rashba Spin-Orbit Coupling

We study theoretically the transmission coefficients and the spin-tunneling time in ferromagnetic/semiconductor/ferromagnetic three-terminal heterojunction in the presence of Rashba spin-orbit interaction, in which onedimensional quantum waveguide theory is developed and applied. Based on the group velocity concept and the particle current conservation principle, we calculate the spin-tunneling time as the function of the intensity of Rashba spinrblt coupling and the length of the semiconductor. We find that as the length of the semiconductor increases, the spintunneling time does not increase linearly but shows behavior of slight oscillation, i;brthermore, with the increasing of the soin-orbit coupling, the spin-tunneling time increases.     

Rashba spin-orbit effect on dwell time of electrons tunneling through semiconductor barrier

A study on characteristics of electrons tunneling through semiconductor barrier is evaluated, in which we take into account the effects of Rashba spin-orbit interaction. Our numerical results show that Rashba spin-orbit effect originating from the inversion asymmetry can give rise to the spin polarization. The spin polarization does not increase linearly but shows obvious resonant features as the strength of Rashba spin-orbit coupling increases, and the amplitudes of spin polarization can reach the highest around the first resonant energy level. Furthermore, it is found that electrons with different spin orientations will spend quite different time through the same heterostructures. The difference of the dwell time between spin-up and spin-down electrons arise from the Rashba spin-orbit coupling. And it is also found that the dwell time will reach its maximum at the first resonant energy level. It can be concluded that, in the time domain, the tunneling processes of the spin-up and spin-down electrons can be separated by modulating the strength of Rashba spin-orbit coupling. Study results indicate that Rashba spin-orbit effect can cause a nature spin filter mechanism in the time domain.     

The effect of the ferromagnetic metal layer on tunnelling conductance and magnetoresistance in double magnetic planar junctions

Based on the free-electron approximation,we investigate the effect of the ferromagnetic metal layer on the tunnelling magnetoresistance(TMR) and tunnelling conductance(TC)in the double magnetic tunnel junctions(DMTJs) of the structure NM/FM/I(S)/NM/I(S)/FM/NM,where FM,NM and I(S) represent the ferromagnetic metal,nonmagetic metal and insulator(Semiconductor),respectively,The FM,I(S)and inner NM layers are of finite thickness,while the thickness of the outer NM layer is infinite.The calculated results show that,due to the spin-dependent interfacial potential barriers caused by electronic band mismatch between the various magnetic and nonmagnetic layers,the dependences of the TMR and TC on the thicknesses of the FM layers exhibit oscillations,and a much higher TMR can be obtained for suitable thicknesses of FM layers.