Zigzag型边界石墨烯纳米带的电子态

在紧束缚近似下, 提出有限系统的Bloch定理方法, 解析计算了Zigzag型石墨烯纳米带的电子态和能带.研究发现, 其电子态有两类, 分别是驻波态和边缘态; 驻波态的波矢为实数, 波函数是正弦函数形式; 边缘态的波矢主要是虚数, 实数部分为零或者π/2, 波函数是双曲正弦函数形式. Zigzag型石墨烯纳米带的能带由驻波态能量和边缘态能量组成, 我们推导了边缘态的关于无限长方向波矢和能量的精确取值范围. 讨论了边缘态和驻波态的过渡点, 发现两种电子态通过不同的方式在受限波矢趋于零时关于格点位置逼近线性关系. 当受限方向也变成无限长时, 可以得到与无限大石墨烯相同的能带关系. 关键词： 紧束缚模型 Zigzag型石墨烯纳米带 边缘态     

Li2C2中电声耦合及超导电性的第一性原理计算研究

通过第一性原理密度泛函和超导Eliashberg理论计算, 我们研究了Li₂C₂在Cmcm相的电子结构和电声耦合特性, 预言这种材料在常压和5GPa下是由电声耦合导致的转变温度分别为13.2 K 和9.8 K的超导体, 为实验上探索包含一维碳原子链的材料中是否可能存在超导电性、发现新的超导体提供了理论依据. 如果理论所预言的Li₂C₂超导电性得到实验的证实, 这将是锂碳化物中转变温度最高的超导体, 高于实验观测到的LiC₂的1.9 K和理论预言的单层LiC₆的8.1 K超导转变温度.     

sp3sTight-binding parameters for transport simulations in compound semiconductors

A genetic algorithm approach is used to fit orbital interaction energies of sp3s* tight-binding models for the nine binary compound semiconductors consistent of Ga, Al, In and As, P, Sb at room temperature. The new parameters are optimized to reproduce the bandstructure relevant to carrier transport in the lowest conduction band and the highest three valence bands. The accuracy of the other bands is sacrificed for the better reproduction of the effective masses in the bands of interest. Relevant band edges are reproduced to within a few meV and the effective masses deviate from the experimental values typically by less than 10%.     

Electronic,structural, and thermal properties of a nanocable consisting of carbon and BN nanotubes

The band structure and thermal behavior of a coaxial C/BN nanocable (5,5)C@(17,0)BN consisting of a carbon nanotube and a boron nitride nanotube have been studied using a tight-binding approximation based on density functional theory. The system is stable up to T～3500–3700 K. As the temperature increases, deformations of the BN tube begin earlier than those of the carbon tube. The near-Fermi states of the nanocable are formed by the overlapping π-π* bands of the carbon tube, and the outer BN nanotube (the nanocable sheath) is an insulator with a bandgap of ～4 eV. The electronic properties of the nanocable (the metallic-type conductivity of the C tube and the insulating character of the BN tube) are retained over the entire temperature interval.     

Two Gaps in Semiconducting EuSbTe_3 Studied by Angle-Resolved Photoemission Spectroscopy

Using angle-resolved photoemission spectroscopy, we study the low-energy electronic structure of a layered ternary telluride EuSbTe_3 semiconductor. It is found that the photoemission constant energy contours can be well described by the simple two-parameter(t_(perp) and t_(para)) tight-binding model based on the Te orbitals in square-net planes of EuSbTe_3, suggesting its Te 5p orbitals dominated low-lying electronic structure, which is reminiscent of other rare-earth tritellurides. However, a possible charge-density-wave gap of 80 meV is found to persist in 300 K,which renders the unexpected semiconducting properties in EuSbTe_3. Moreover, we reveal an extra band gap occurring around 200 meV below the Fermi level at low temperatures, which can be attributed to the interaction between the main and folded bands due to lattice scatterings. Our findings provide the first comprehensive understanding of the electronic structure of layered ternary tellurides, which lays the basis for future research on these compounds.     

PDT光敏剂HA在不同液相体系下的光谱特性研究

为了对候选光敏剂竹红菌甲素(HA)进行改性并保持其优异的敏化特性,对HA的光谱特性和激发态性质作了进一步的指认。系统研究了HA在不同液相体系下的吸收和荧光光谱,对指认HA的光谱和电子跃迁的机制提出了新的依据,结果表明,吸收带I产生于π-π*跃迁,吸收带Ⅱ和Ⅲ产生于P-π共轭所导致的L→aπ跃迁的电子振动结构;荧光发射带I和Ⅱ是产生于同一跃迁机制S1(L,aπ)→S0的正常荧光的振动结构。     

Si tight-binding parameters from genetic algorithm fitting

Quantum mechanical simulations of carrier transport in Si require an accurate model of the complicated Si bandstructure. Tight-binding models are an attractive method of choice since they bear the full electronic structure symmetry within them and can discretize a realistic device on an atomic scale. However, tight-binding models are not simple to parameterize and characterize. This work addresses two issues: (1) the need for an automated fitting procedure that maps tight-binding orbital interaction energies to physical observables such as effective masses and band edges, and (2) the capabilities and accuracy of the nearest and second-nearest neighbor tight-binding sp3s* models with respect to carrier transport in indirect bandgap materials. A genetic algorithm approach is used to fit orbital interaction energies of these tight-binding models in a nine- and 20-dimensional global optimization problem for Si. A second-nearest neighbor sp3s* parameter set that fits all relevant conduction and valence band properties with a high degree of accuracy is presented. No such global fit was found for the nearest neighbor sp3s* model and two sets, one heavily weighed for electron properties and the other for hole properties, are presented. Bandstructure properties relevant for electron and hole transport in Si derived from these three sets are compared with the seminal Vogl et al. [Journal of the Physics and Chemistry of Solids 44, 365 (1983)] parameters.     

Compounds with π(loc) → π*(deloc) electronic transitions and their solvatochromism

Molecular structures possessing atomic sites that contribute a non‐bonding electron pair to their π system (e.g. nitrogen atoms with sp² hybridization in pyrroles and anilines) usually exhibit a first absorption band whose solvatochromism is, surprisingly, sensitive only to the polarizability of the medium even though they are dipolar. As shown here, this solvatochromic behavior is a result of the first electronic transition in these compounds occurring from a substantially localized π orbital to a substantially delocalized π* orbital in the molecular structure. The high electronic delocalization present leads to a marked bathochromic band shift as the polarizability of the medium increases. It is especially relevant that this solvatochromism, which is because of the polarizability of the medium, explains the spectral shift that is only because of the redistribution of the electrons of the solvent molecules. It is important to take into account that this electronic redistribution happens instantaneously in this process. Copyright © 2015 John Wiley & Sons, Ltd.     

Seeing many-body effects in single- and few-layer graphene: observation of two-dimensional saddle-point excitons

Significant excitonic effects were observed in graphene by measuring its optical conductivity in a broad spectral range including the two-dimensional π-band saddle-point singularities in the electronic structure. The strong electron-hole interactions manifest themselves in an asymmetric resonance peaked at 4.62 eV, which is redshifted by nearly 600 meV from the value predicted by ab initio GW calculations for the band-to-band transitions. The observed excitonic resonance is explained within a phenomenological model as a Fano interference of a strongly coupled excitonic state and a band continuum. Our experiment also showed a weak dependence of the excitonic resonance in few-layer graphene on layer thickness. This result reflects the effective cancellation of the increasingly screened repulsive electron-electron (e-e) and attractive electron-hole (e-h) interactions.     

Theoretical study of the electronic structure of the Si3N4(0 0 0 1) surface

Density functional theory has been applied to a study of the electronic structure of the ideally-terminated, relaxed and H-saturated (0 0 0 1) surfaces of β-Si₃N₄ and to that of the bulk material. For the bulk, the lattice constants and atom positions and the valence band density of states are all in good agreement with experimental results. A band gap of 6.7 eV is found which is in fair accord with the experimental value of 5.1-5.3 eV for H-free Si₃N₄. Using a two-dimensionally-periodic slab model, a π-bonding interaction is found between threefold-coordinated Si and twofold-coordinated N atoms in the surface plane leading to π and π* surface-state bands in the gap. A surface-state band derived from s-orbitals is also found in the gap between the upper and lower parts of the valence band. Relaxation results in displacements of surface and first-underlayer atoms and to a stronger π-bonding interaction which increases the π-π* gap. The relaxed surface shows no occupied surface states above the valence band maximum, in agreement with recent photoemission data for a thin Si₃N₄ film. The π* band, however, remains well below the conduction band minimum (but well above the Fermi level). Adsorbing H at all dangling-bond sites on the ideally-terminated surface and then relaxing the surface and first underlayer leads to smaller, but still finite, displacements in comparison to the clean relaxed surface. This surface is more stable, by about 3.67 eV per H, than the clean relaxed surface.     

闪锌矿结构CdTe和ZnTe能带结构和有效质量的第一性原理计算

基于第一性原理全电子势线性缀加平面波方法(FPLAPW)，计算了闪锌矿结构半导体材料ZnTe，CdTe的能带结构.结合闪锌矿对称化合物的有效质量近似理论，对第一性原理的计算结果进行拟合后，得到了ZnTe，CdTe在带隙附近的电子结构.此外还讨论了晶体场分裂能、自旋-轨道相互作用的分裂能和电子、空穴的有效质量及相应的Luttinger参数，结果与实验值相符合. 关键词： FLAPW 电子结构 有效质量     

Electronic and Magnetic Properties of the p-NPNN

In this paper, we study the electronic band structure and the ferromagnetic properties of the organic radicalp-NPNN by employing density-functional theory with generalized gradient approximation (GGA) and local-spin densityapproximation (LSDA). The density of states, the total energy, and the spin magnetic moment are calculated. Thecalculations reveal that the δ-phase of p-NPNN has a stable ferromagnetic ground state. It is found that an unpairedelectron in this compound is localized in a single occupied molecular orbital (SOMO) constituted primarily of π* (NO)orbitals, and the main contribution of the spin magnetic moment comes from the π* (NO) orbitals. By comparison, wefind that the GGA is more suitable to describe free radical systems than LSDA.     

C掺杂锐钛矿相TiO2吸收光谱的第一性原理研究

运用第一性原理,对C掺杂锐钛矿相TiO₂的电子结构进行了研究,从能带结构理论解释了C掺杂TiO₂吸收光谱的一些实验现象.发现在C掺杂后的锐钛矿相TiO₂的禁带宽度增大,并且在带隙中出现了杂质能级,这些杂质能级主要是由C 2p轨道上的电子构成的,它们之间是独立的,正是这些独立的杂质能级使TiO₂掺杂后可以发生可见光响应.价带上的电子可以吸收一定能量的光子跃迁到杂质能级,而杂质能级上的电子也可以吸收一定能量的光子跃迁到导带,所以从理论上可以计算出掺杂后的TiO₂在可见光范围内存在两个吸收边,与实验中所得到的现象相一致. 关键词： C掺杂 2')" href="#">锐钛矿TiO₂ 能带结构 吸收光谱     

Elektronenenergieverlustspektren von Graphiteinkristallen und Kohlenstoffaufdampfschichten im Bereich 0,02–0,4 eV

High-resolved electron energy loss spectra of graphite and of evaporated carbon films have been measured in the energy loss range between 20 and 400 meV. The primary energy was 25 keV, the energy resolution between 4 and 7 meV. The energy loss spectrum of graphite is characterized by a strong continuum due to the free charge carriers. Two weak and broad bands at 45 and 128 meV superimposed on this continuum are probably due to electronic excitations. In the energy loss spectrum of evaporated carbon films phonon creations predominate below 160 meV, where several well-separated peaks are observed. An energy loss at 370 meV is caused by a longitudinal band transition.     

High-energy limit of massless Dirac fermions in multilayer graphene using magneto-optical transmission spectroscopy

We have investigated the absorption spectrum of multilayer graphene in high magnetic fields. The low-energy part of the spectrum of electrons in graphene is well described by the relativistic Dirac equation with a linear dispersion relation. However, at higher energies (>500 meV) a deviation from the ideal behavior of Dirac particles is observed. At an energy of 1.25 eV, the deviation from linearity is approximately 40 meV. This result is in good agreement with the theoretical model, which includes trigonal warping of the Fermi surface and higher-order band corrections. Polarization-resolved measurements show no observable electron-hole asymmetry.     

Electronic structure and kinetic properties of tight-binding metals at high temperature

The influence of the electron-phonon interaction on the electronic properties of tight-binding metals is considered with the one-band approximation. It is shown by using the previous results that the existence of the twofold effect is due to phonons. Firstly, phonons lead to a non-coherent scattering of electrons and as a result a finite lifetime for the electron states. Secondly, phonons lead to a renormalization of the periodic cristal potential. Latter was well known for the nearly free-electron crystals to be expressed as Debye-Waller corrections to the lattice potential. Such effect in tight-binding metals is shown here to result in the temperature dependence of overlap integrals. It gives rise to the increase of the band width and the electron velocity for the one-band approximation. The negative temperature coefficient of resistivity is shown to may arise in result at high temperatures.     

有限尺寸石墨烯的电子态

根据π电子的紧束缚模型, 通过有限系统的Bloch定理方法, 解析计算了有限尺寸石墨烯的电子态和能带. 研究发现, 其电子态有且只有两类, 分别是驻波态和边缘态.驻波态时, 波函数形式是两个方向都是正弦函数; 边缘态时, 波函数形式是Armchair边界的方向是双曲正弦函数, Zigzag边界的方向是正弦函数. 其能带由总碳原子数N个离散的本征值组成, 推导了定量计算边缘态的本征值个数的表达式, 并通过态密度来分析边缘态的存在和与无限大情况的一致性. 所有的分析中数值结果与解析理论都完全一致, 当两个受限方向都变成无限长时, 可以得到与无限大石墨烯相同的结果. 关键词： 紧束缚模型 石墨烯 边缘态 态密度     

Bilayer splitting in the electronic structure of heavily overdoped Bi(2)Sr(2)CaCu(2)O(8+delta).

The electronic structure of heavily overdoped Bi(2)Sr(2)CaCu(2)O(8+delta) is investigated by angle-resolved photoemission spectroscopy. The long-sought bilayer band splitting in this two-plane system is observed in both normal and superconducting states, which qualitatively agrees with the bilayer Hubbard model calculations. The maximum bilayer energy splitting is about 88 meV for the normal state feature, while it is only about 20 meV for the superconducting peak.     

Cooper pair and electron-hole pair instabilities in a quasi-one dimensional system

We calculate for an almost half-filled tight-binding band, the mean field ground state energy differences between the charge-density-wave (CDW) and BCS paired states for a truncated model Hamiltonian with zero-range instantaneous electron-electron interactions. The CDW pairing is found to be always unstable vis-à-vis BCS for a static lattice distortion of wave vector Q = (2k_F, π, π).     

CdTe和HgTe电子结构的紧束缚模型计算

基于局域密度近似(LDA或GGA)的密度泛函理论计算往往低估体系的禁带宽度,而这一低估对窄带隙半导体尤为严重.尽管基于混合泛函的密度泛函理论能有效地修正这一误差,但是由于计算量较大仍无法用于计算较大体系.本文发展了一组能够比较准确描述CdTe和HgTe晶体电子结构的紧束缚参数.将基于混合泛函的密度泛函计算结果作为输入,我们构建了正交的sp~3s~*基组下的紧束缚模型.此模型能够比较准确地描述能带结构在费米面附近4 eV范围内的色散关系.利用当前模型计算了CdTe和HgTe非晶的电子态密度,计算结果与他人的理论计算和实验值符合较好.