Study on gamma response function of E J301 organic liquid scintillator with GEANT4 and FLUKA

The gamma response function is required for energy calibration of EJ301 （5 cm in diameter and 20 cm in height） organic liquid scintillator detector by means of gamma sources. The GEANT4 and FLUKA Monte Carlo simulation packages were used to simulate the response function of the detector for standard 22Na, 60Co, 137Cs gamma sources. The simulated results showed a good agreement with experimental data by incorporating the energy resolution function to simulation codes. The energy resolution and the position of the maximum Compton electron energy were obtained by comparing measured light output distribution with simulated one. The energy resolution of the detector varied from 21.2% to 12.4% for electrons in the energy region from 0.341 MeV to 1.12 MeV. The accurate position of the maximum Compton electron energy was determined at the position 81% of maximum height of Compton edges distribution. In addition, the relation of the electron energy calibration and the effective neutron detection thresholds were described in detail. The present results indicated that both packages were suited for studying the gamma response function of EJ301 detector.     

Low-leakage-current AIGaN/GaN HEMTs on Si substrates with partially Mg-doped GaN buffer layer by metal organic chemical vapor deposition

High-performance low-leakage-current A1GaN/GaN high electron mobility transistors （HEMTs） on silicon （111） sub- strates grown by metal organic chemical vapor deposition （MOCVD） with a novel partially Magnesium （Mg）-doped GaN buffer scheme have been fabricated successfully. The growth and DC results were compared between Mg-doped GaN buffer layer and a unintentionally onμe. A 1μ m gate-length transistor with Mg-doped buffer layer exhibited an OFF-state drain leakage current of 8.3 × 10-8 A/mm, to our best knowledge, which is the lowest value reported for MOCVD-grown A1GaN/GaN HEMTs on Si featuring the same dimension and structure. The RF characteristics of 0.25-μ m gate length T-shaped gate HEMTs were also investigated.     

Specific Heat and Charge Density of Quasi-One-Dimensional Interchain Coupling Organic Ferromagnets

On the basis of a generalized SSH model, an organic polymer ferromagnet theory is proposed at the finite temperature in the self-consistent mean field approximation, and the specific heat and charge density of the quasione-dimensional interehain coupling organic ferromagnets are presented. We find that an obvious feature is to present itself the round peak for the specific heat with the temperature. This indicates unambiguously the presence of the phase transition in the system. The transition temperature plays down with increasing of the interchain coupling t2 or decreasing of the electron repulsion u. The curves of charge density with the temperature debase monotonously. This result illustrates that the higher the temperature is, the more electrons are excited.     

Effect of traps' adjacency on the electric field dependence of mobility in organic systems

In some organic materials, varying the finite distance between adjacent carrier traps modifies the Coulomb potential around each trap, resulting in a more complex field-dependence of mobility, differing from（but not incompatible with） the usually considered relationship of ln μ∝E^1/2, a relationship which has been successfully explained by the Poole–Frenkel effect. To investigate the influence of the adjacency of traps, a model system is proposed, which consists of two traps separated by distance α. Our numerical calculation shows that with increasing α, the dependence of mobility on the electric field changes from linear to exponential. Moreover, beyond a certain large α, i.e., as the distance to the nearest trap approaches infinity, the proposed model is essentially the same as the Poole–Frenkel effect. The proposed model accounts for the effect of the energy barrier shape, especially the effect of the location of the potential-energy maximum, a phenomenon which is not accommodated in the Poole–Frenkel model. Because the model assumes the Coulomb interaction between the adjacent traps, it applies to those charged traps which may exist in organic materials for various reasons.     

Significant performance enhancement in A1GaN/GaN high electron mobility transistor by high-κ organic dielectric

The electrical properties of A1GaN/GaN high electron mobility transistor （HEMT） with and without high-κ organic dielectrics are investigated. The maximum drain current ID max and the maximum transconductance gm max of the organic dielectric/A1CaN/GaN structure can be enhanced by 74.5%, and 73.7% compared with those of the bare A1GaN/GaN HEMT, respectively. Both the threshold voltage VT and gm max of the dielectric/AlGaN/GaN HEMT are strongly dielectric-constant-dependent. Our results suggest that it is promising to significantly improve the performance of the A1GaN/GaN HEMT by introducing the high-κ organic dielectric.     

Improved device reliability in organic light emitting devices by controlling the etching of indium zinc oxide anode

A controllable etching process for indium zinc oxide （IZO） films was developed by using a weak etchant of oxalic acid with a slow etching ratio. With controllable etching time and temperature, a patterned IZO electrode with smoothed surface morphology and slope edge was achieved. For the practical application in organic light emitting devices （OLEDs）, a sup- pression of the leak current in the current-voltage characteristics of OLEDs was observed. It resulted in a 1.6 times longer half lifetime in the IZO-based OLEDs compared to that using an indium tin oxide （ITO） anode etched by a conventional strong etchant of aqua regia.     

F4-TCNQ concentration dependence of the current-voltage characteristics in the Au/P3HT：PCBM：F4-TCNQ/n-Si （MPS） Schottky barrier diode

In this study, we investigate some main electrical parameters of the gold/poly（3-hexylthiophene）：[6,6]-phenyl C61 bu- tyric acid methyl ester：2,3,5,6-tetrafluoro-7,7,8,8-tetracyanoquinodimethane/n-type silicon （Au/P3HT：PCBM：F4-TCNQ/n- Si） metal-polymer-semiconductor （MPS） Schottky barrier diode （SBD） in terms of the effects of F4-TCNQ concentration （0%, 1%, and 2%）. F4-TCNQ-doped P3HT：PCBM is fabricated to figure out the p-type doping effect on the device per- formance. The main electrical parameters, such as ideality factor （n）, barrier height （ФB0）, series resistance （Rs）, shunt resistance （Rsh）, and density of interface states （Nss） are determined from the forward and reverse bias current-voltage （l-V） characteristics in the dark and at room temperature. The values of n, Rs, ФB0, and Nss are significantly reduced by using the 1% F4-TCNQ doping in P3HT：PCBM：F4-TCNQ organic blend layer, additionally, the carrier mobility and current are increased by the soft （1%） doping. The most ideal values of electrical parameters are obtained for 1% F4-TCNQ used diode. On the other hand, the carrier mobility and current for the hard doping （2%） become far away from the ideal diode values due to the unbalanced generation of holes/electrons and doping-induced disproportion when compared with 1% F4-TCNQ doping. These results show that the electrical properties of MPS SBDs strongly depend on the F4-TCNQ doping and doping concentration of interfacial P3HT：PCBM：F4-TCNQ organic layer. Moreover, the soft F4-TCNQ dop- ing concentration （1%） in P3HT：PCBM：F4-TCNQ organic layer significantly improves the electrical characteristics of the Au/P3HT：PCBM：F4-TCNQ/n-Si （MPS） SBDs which enables the fabricating of high-quality electronic and optoelectronic devices.     

Properties of transistor based C60 thin film on polystyrene

This paper reports that the n-type organic thin-fihn transistors have been fabricated by using C60 as the active layer and polystyrene as the dielectric. The properties of insulator and the growth characteristic of C60 film were carefully investigated. By choosing different source/drain electrodes, a device with good performance can be obtained. The highest electron field effect mobility about 1.15 cm2/（V. s） could reach when Barium was introduced as electrodes. Moreover, the C60 transistor shows a negligible ＇hysteresis effect＇ contributed to the hydroxyl-free of insulator. The result suggests that polymer dielectrics are promising in applications among n-type organic transistors.     

Improved light extraction of organic light emitting diodes with a nanopillar pattering structure

We have investigated the properties of organic light emitting diodes(OLEDs)with a nanopillar patterning structure at organic–metal or organic–organic interfaces.The results demonstrate that the introduction of a nanopillar structure can improve the light extraction efficiency greatly.We also find that the number,height,and position of nanopillars all affect the light extraction of OLEDs.The maximum power efficiency of a device with an optimized nanopillar patterning mode can be improved to 2.47 times that of the reference device.This enhancement in light extraction originates from the improved injected carriers,the broadened charge recombination zone,and the intensified wave guiding effects.     

High performance pentacene organic field-effect transistors consisting of biocompatible PMMA/silk fibroin bilayer dielectric

Pentacene organic field-effect transistors （OFETs） based on single- or double-layer biocompatible dielectrics of poly（methyl methacrylate） （PMMA） and/or silk fibroin （SF） are fabricated. Compared with those devices based on sin- gle PMMA or SF dielectric or SF/PMMA bilayer dielectric, the OFETs with biocompatible PMMA/SF bilayer dielectric exhibit optimal performance with a high field-effect mobility of 0.21 cm2/Vs and a current on/off ratio of 1.5 × 104. By investigating the surface morphology of the pentacene active layer through atom force microscopy and analyzing the elec- trical properties, the performance enhancement is mainly attributed to the crystallization improvement of the pentacene and the smaller interface trap density at the dielectric/organic interface. Meanwhile, a low contact resistance also indicates that a good electrode/organic contact is formed, thereby assisting the performance improvement of the OFET.     

Remarks on interpretations of the Eotvos experiment and misinterpretation of E=mc^2

The Eotvos experiment on the verification of equivalence between inertial mass and gravitational mass of a body is famous for its accuracy. A question is, however, can these experimental results be applied to the case of a physical space in general relativity, where the space coordinates could be arbitrary？ It is pointed out that it can be validly applied because it has been proven that Einstein＇s equivalence principle for a physical space must have a frame of reference with the Euclidean-like structure. Will claimed further that such an overall accuracy can be translated into an accuracy of the equivalence between inertial mass and each type of energy. It is shown that, according to general relativity, such a claim is incorrect. The root of this problem is due to an inadequate understanding of special relativity that produced the famous equation E=mc^2, which must be understood in terms of energy conservation. Concurrently, it is pointed out that this error is a problem in Will＇s book, ‘Theory and Experiment in Gravitational Physics＇.     

First-Principles Calculations of Atomic and Electronic Properties of T1 and In on Si（111）

The atomic and electronic structures of T1 and In on Si（111） surfaces are investigated using the firstprinciples total energy calculations. Total energy optimizations show that the energetically favored structure is 1/3 ML T1 adsorbed at the T4 sites on Si（111） surfaces. The adsorption energy difference of one T1 adatom between （√3 × √3） and （1 × 1） is less than that of each In adatom. The DOS indicates that TI 6p and Si 3p electrons play a very important role in the formation of the surface states. It is concluded that the bonding of TI adatoms on Si（111） surfaces is mainly polar covalent, which is weaker than that of In on Si（111）. So T1 atom is more easy to be migrated than In atom in the same external electric field and the structures of T1 on Si（111） is prone to switch between （√3 × √3） and （1 × 1）.     

Design and construction progress of BRIF

A new RIB project, the Beijing Radioactive Ion-beam Facility （BRIF）, has been running at CIAE since 2004. In this project, a 100 MeV H-cyclotron, CYCIAE-100, is selected as the driving accelerator providing a 75-100 MeV, 200-500 μA proton beam. An ISOL system employs two stage separators to reach the mass resolution of 20000. Its RIB beam will be injected into the existing Tandem and a superconducting booster installed down stream of the Tandem will increase the energy by 2 MeV/q. The progress of BRIF, giving special emphasis to CYCIAE-100, will be introduced in this paper.     

Study on the pre-chopper in CSNS LEBT

Physical designing of the pre-chopper in CSNS LEBT is carried out, which includes the deflecting voltage, the length and the width of the deflecting plates, and the gap between the deflecting plates. The most outstanding feature of the design is that both the gap and the width vary with the beam envelope size. So both the requried deflecting voltage and the loaded capacitance are lowered. In order to avoid destruction of the space charge neutralization by the pre-chopper in the whole LEBT, an electron-trapping electrode is arranged to confine the electrostatic field of the pre-chopper to the local area. To examine the reliability of the pre-chopping design in CSNS LEBT, a similar pre-chopping design in ADS RFQ LEBT is set up and an experiment on the pre-chopper is prepared. 3-dimensional simulations are carried out to determine the loaded capacitance and the applied voltage of the electron-trapping electrode.     

Entropy of Quantum Dynamical Systems and Sufficient Families in Orthomodular Lattices with Bayessian State

The purpose of the present paper is to study the entropy hs（Ф） of a quantum dynamical systems Ф = （ L, s, Ф）, where s is a bayessian state on an orthomodular lattice L. Having introduced the notion of entropy hs（ Ф, A） of partition A of a Boolean algebra B with respect to a state s and a state preserving homomorphism Ф, we prove a few results on that, define the entropy of a dynamical system hs（Ф）, and show its invariance. The concept of sufficient families is also given and we establish that hs （Ф） comes out to be equal to the supremum of hs （Ф,A）, where A varies over any sufficient family. The present theory has then been extended to the quantum dynamical system （ L, s, Ф）, which as an effect of the theory of commutators and Bell inequalities can equivalently be replaced by the dynamical system （B, s0, Ф）, where B is a Boolean algebra and so is a state on B.     

Synchronization in a Mutualism Ecosystem Induced by Noise Correlation

Understanding the cause of the synchronization of population evolution is an important issue for ecological improvement. Here we present a Lotka-Volterra-type model driven by two correlated environmental noises and show, via theoretical analysis and direct simulation, that noise correlation can induce a synchronization of the mutualists. The time series of mutual species exhibit a chaotic-like fluctuation, which is independent of the noise correlation, however, the chaotic fluctuation of mutual species ratio decreases with the noise correlation. A quantitative parameter defined for characterizing chaotic fluctuation provides a good approach to measure when the complete synchronization happens.     

Metric of States

Metric of quantum states plays an important role in quantum information theory. In this letter, we find the deep connection between quantum logic theory and quantum information theory. Using the method of quantum logic, we can get a famous inequality in quantum information theory, and we answer a question raised by S. Gudder.     

Status and accuracy of the Monte Carlo generators for luminosity measurements

The status and accuracy of the precision Monte Carlo generators used for luminosity measurements at flavour factories is reviewed. It is shown that, thanks to a considerable, long-term effort in tuned comparisons between the predictions of independent programs, as well as in the validation of the generators against the presently available calculations of the next-to-next-to-leading order QED corrections to Bhabha scattering, the theoretical accuracy reached by the most precise tools is of about one per mille. This error estimate is valid for realistic experimental cuts, appears to be quite robust and is already sufficient for very accurate luminosity measurements. However, recent progress and possible advances to further improve it are also discussed.     

Beam tail effect of a performance-enhanced EC-ITC RF gun

The beam tail effect of multi-bunches will influence the electron beam performance in a high intensity thermionic RF gun. Beam dynamic calculations that illustrate the working states of single beam tail and multi-pulse feed-in of a performance-enhanced EC-ITC （external cathode independent tunable cavity） RF gun for an FEL （free electron laser） injector are performed to estimate the extracted bunch properties. By using both Parmela and homemade MATLAB codes, the effects of a single beam tail as well as interactions of multi-pulses are analyzed, where a ring-based electron algorithm is adopted to calculated RF fields and the space-charge field. Furthermore, the procedure of unexpected deviated-energy particles mixed with an effective bunch head is described by the MATLAB code as well. As a result, the performance-enhanced EC-ITC RF gun is proved to have the capability to extract continual stable bunches suitable for a high requirement THz-FEL.     

Calibration of RPC-based muon detector at BESⅢ

The calibration algorithm for RPC-based muon detector at BESIII has been developed. The calibration method, calibration error and algorithm performance are studied. The primary results of efficiency and noise at layer, module and strip levels have been calibrated with cosmic ray data. The calibration constants are available for simulation and reconstruction tuning. The results of Monte Carlo and data are also compared to check the validation and reliability of the algorithm.