多层结构双自旋过滤隧道结中的电子输运特性

在转移矩阵方法及Mireles和Kirczenow的量子相干输运理论的基础上,研究了正常金属层/磁性半导体层/非磁绝缘层/磁性半导体层/正常金属层型双自旋过滤隧道结中Rashba自旋轨道耦合效应和自旋过滤效应对自旋相关输运的影响.讨论了隧穿磁电阻（TMR）、隧穿电导与各材料层厚度、Rashba自旋轨道耦合强度以及两磁性半导体中磁矩的相对夹角θ之间的关系.研究表明：含磁性半导体层的双自旋过滤隧道结由于磁性半导体层的自旋过滤效应和Rashba自旋轨道耦合作用可获得极大的TMR值.另外TMR和隧穿电导随着Rashba自旋轨道耦合强度的变化而振荡,振荡周期随Rashba自旋轨道耦合强度的增大逐渐减小. 关键词： 双自旋过滤隧道结 Rashba自旋轨道耦合 隧穿磁电阻 隧穿电导     

双势垒抛物势阱磁性隧道结隧穿磁阻及自旋输运性质的研究

采用相干量子输运理论和传递矩阵的方法,在抛物势阱磁性隧道结(F/PW/F)的铁磁和半导体势阱间插入另一种半导体作为势垒,构造具有双势垒的抛物势阱磁性隧道结作为研究对象,研究了抛物势阱宽度、自旋轨道耦合效应、角度效应及插入势垒厚度对隧穿磁阻及自旋输运性质的影响计算结果表明,通过适当调节Rashba自旋轨道藕合强度和插入势垒的厚度,可以实现隧穿磁阻(TMR)的调制,能获得较大的TMR值,这些特点有助于促进新型磁性隧道结的开发和应用.     

正多边形量子环自旋输运的严格解

研究了存在Rashba自旋轨道相互作用的正多边形量子环的自旋输运特性．采用量子网络的典型方法和Landauer-Büttiker电导公式,严格求解了电子通过正多边形量子环的散射问题,并得到了电导的解析表达式．通过数值计算和解析分析,进一步研究了量子环电导随电子波矢和自旋轨道相互作用强度变化的复杂形式,包括源于自旋轨道耦合相互作用的电导零点系列．特别地,还研究了正多边形环的边数趋近于无穷的极限情形,与直接采用圆环模型获得的结果完全一致． 关键词： Rashba自旋-轨道相互作用 量子网络 量子输运     

Rashba自旋-轨道相互作用影响下量子盘中强耦合磁极化子性质的研究

本文基于Lee-Low-Pines幺正变换法,采用Tokuda改进的线性组合算符法研究了Rashba自旋-轨道相互作用效应下量子盘中强耦合磁极化子的性质.结果表明,磁极化子的相互作用能Eint的取值随量子盘横向受限强度ω0、外磁场的回旋频率ωc、电子-LO声子耦合强度α和量子盘厚度L的变化均与磁极化子的状态性质密切相关;磁极化子的平均声子数N随ωc,ω0和α的增加而增大,随L的增加而振荡减小;在Rashba自旋-轨道相互作用效应影响下磁极化子的有效质量将劈裂为m*+,m*-两种,它们随ωc,ω0和α的增加而增大,随L的增加而振荡减小;在研究量子盘中磁极化子问题时,电子-LO声子耦合和Rashba自旋-轨道相互作用效应的影响不可忽略,但Rashba自旋-轨道相互作用和极化子效应对磁极化子的影响只有在电子运动的速率较慢时显著.     

含δ势垒的铁磁/半导体/铁磁异质结中的自旋输运和渡越时间

研究了含δ势垒的铁磁/半导体/铁磁异质结中自旋相关的透射概率和渡越时间,讨论了量子尺寸效应和Rashba自旋轨道耦合效应对隧穿特性的影响.研究结果表明：δ势垒的存在降低了自旋电子的透射概率,改变了透射概率的位相.Rashba自旋轨道耦合强度的增加加大了透射概率的振荡频率.不同自旋取向的电子隧穿异质结时,渡越时间随着半导体长度、Rashba自旋轨道耦合强度以及两铁磁电极中的磁化方向的夹角的变化而变化. 关键词： δ势垒')" href="#">δ势垒 铁磁/半导体/铁磁异质结 Rashba自旋轨道耦合效应 渡越时间     

δ势垒对多臂量子环中持续电流的影响

提出了含δ势垒的多臂量子环模型.研究发现总磁通为零时,持续电流随半导体环增大发生非周期性振荡,下臂因含δ势垒而获得最小的平均持续电流.AB磁通增强时,持续电流会发生周期性等幅振荡,并与电极的磁矩方向以及隧穿电子的自旋方向相关.两电极磁矩方向平行时,Rashba自旋轨道耦合具有改变持续电流相位和相位差的效应;两电极磁矩方向反平行时,Rashba自旋轨道耦合具有改变持续电流振幅的效应.各臂之间持续电流的不同与臂长和磁通分布的差异相关.在一定条件下,两种波函数所对应的持续电流是可分离的. 关键词： 多臂量子环 持续电流 δ势垒 Rashba自旋轨道耦合     

对称抛物势阱磁性隧道结中的自旋输运及磁电阻效应

研究了两端具有铁磁接触的对称抛物势阱磁性隧道结(F/SPW/F)中自旋相关的隧穿概率和隧穿磁电阻,讨论了量子尺寸效应和Rashba 自旋轨道耦合作用对自旋极化输运特性的影响.研究结果表明:隧穿概率和隧穿磁电阻随抛物势阱宽度的增加发生周期性的振荡.抛物势阱深度的增加减小了隧穿概率和隧穿磁电阻的振荡频率.Rashba 自旋轨道耦合强度的增加加大了隧穿概率和隧穿磁电阻的振荡频率.隧穿概率和隧穿磁电阻的振幅和峰谷比强烈依赖于两铁磁电极中磁化方向的夹角. 关键词： 磁性隧道结 Rashba 自旋轨道耦合 隧穿概率 隧穿磁电阻     

两端线型双量子点分子Aharonov-Bohm干涉仪电输运

设计一个两端线型双量子点分子Aharonov-Bohm (A-B)干涉仪. 采用非平衡格林函数技术, 理论研究无含时外场作用下的体系电导和引入含时外场作用下的体系平均电流. 在不考虑含时外场时, 调节点间耦合强度或磁通可以诱导电导共振峰劈裂. 控制穿过A-B干涉仪磁通的有无, 实现了共振峰电导数值在0与1之间的数字转换, 为制造量子开关提供了一个新的物理方案. 同时借助磁通和Rashba自旋轨道相互作用, 获得了自旋过滤. 当体系引入含时外场时, 平均电流曲线展示了旁带效应. 改变含时外场的振幅, 实现了体系平均电流的大小与位置的有效控制, 而调节含时外场的频率, 则可以实现平均电流峰与谷之间的可逆转换. 通过调节磁通与Rashba自旋轨道相互作用, 与自旋相关的平均电流亦得到有效控制. 研究结果为开发利用耦合多量子点链嵌入A-B 干涉仪体系电输运性质提供了新的认知. 上述结果可望对未来的量子器件设计与量子计算发挥重要的指导作用.     

铁磁/半导体/铁磁结构的双量子环自旋输运的特性

研究了与铁磁/半导体/铁磁结构相关的双量子环自旋输运的规律,研究结果表明：总磁通为零条件下,铁磁电极磁化方向反平行时,双量子环与单量子环相比提高了自旋电子透射概率的平均值.铁磁电极磁化方向平行时,双量子环对提高自旋向下电子平均透射概率的效果更明显;双量子环受到Rashba自旋轨道耦合作用影响时,自旋电子的平均透射概率明显高于单量子环,即使再加上外加磁场的影响,透射概率较高这一特征依然存在;双量子环所含的δ势垒具有阻碍自旋电子输运的作用,随δ势垒强度Z的增大透射概率 关键词： 双量子环 Rashba自旋轨道耦合 透射概率 δ势垒')" href="#">δ势垒     

任意正多边形量子环自旋输运的普遍解

在有关偶数正多边形量子环对称连接特殊情形的自旋输运特性的研究基础上,进一步探讨了任意正多边形量子环的自旋输运性质.不仅解析地求解了相关电子散射问题,而且得到了 Landauer-Buttiker 电导的普遍公式,并讨论了它的圆环极限和 Aharonov-Casher 相位问题.结合数值计算,研究了正多边形量子环的Landauer-Buttiker 电导随多边形边数、引线连接方式、自旋轨道耦合强度以及电子波矢的周期变化特性和零点分布规律. 关键词： Rashba 自旋-轨道耦合 Aharonov-Casher 相位 量子网络 量子输运     

Spin-dependent transport through quantum dot with inelastic interactions

Using the Keldysh nonequilibrium Green function method, we theoretically investigate the electron transport properties of a quantum dot coupled to two ferromagnetic electrodes, with inelastic electron-phonon interaction and spin flip scattering present in the quantum dot. It is found that the electron-phonon interaction reduces the current, induces new satellite polaronic peaks in the differential conductance spectrum, and at the same time leads to oscillatory tunneling magnetoresistance effect. Spin flip scattering suppresses the zero-bias conductance peak and splits it into two, with different behaviors for parallel and anti-parallel magnetic configuration of the two electrodes. Consequently, a negative tunneling magnetoresistance effect may occur in the resonant tunneling region, with increasing spin flip scattering rate.     

Effect of Rashba spin–orbit coupling on the spin polarized transport in diluted magnetic semiconductor barrier structures

We investigate theoretically the effects of Rashba spin–orbit coupling on the spin dependent transport through diluted magnetic semiconductor single and double barrier structures in the presence of a magnetic field. We find that the Rashba spin–orbit coupling gives rise to an enhancement of the negative tunnelling magnetoresistance of the diluted magnetic semiconductor single barrier structure and a pronounced beating pattern in the tunnelling magnetoresistance and spin polarization of the diluted magnetic semiconductor double barrier structure.     

Spin-dependent delay time and Hartman effect in asymmetrical graphene barrier under strain

We study the spin-dependent tunneling time, including group delay and dwell time, in a graphene based asymmetrical barrier with Rashba spin–orbit interaction in the presence of strain, sandwiched between two normal leads. We find that the spin-dependent tunneling time can be efficiently tuned by the barrier width, and the bias voltage. Moreover, for the zigzag direction strain although the oscillation period of the dwell time does not change, the oscillation amplitude increases by increasing the incident electron angle. It is found that for the armchair direction strain unlike the zigzag direction the group delay time at the normal incidence depends on the spin state of electrons and Hartman effect can be observed. In addition, for the armchair direction strain the spin polarization increases with increasing the RSOI strength and the bias voltage. The magnitude and sign of spin polarization can be manipulated by strain. In particular, by applying an external electric field the efficiency of the spin polarization is improved significantly in strained graphene, and a fully spin-polarized current is generated.     

Controllable spin-dependent transport in silicene superlattice

Based on the transfer-matrix method, we theoretically investigate the spin-dependent transport properties in magnetic silicene superlattice in the presence of extrinsic Rashba spin–orbit interaction (RSOI). It is found that the spin transmission probability and spin conductivities can be efficiently controlled by the number of magnetic barriers. As the number of magnetic barriers increases, spin conductivities strongly decrease, and reduce to zero in the large on-site potential difference between A and B sublattices (Δ_z) region. The results indicate that a magnetic silicene superlattice exhibits a remarkable wavevector-dependent spin filtering effect. Also, the magnetoresistance (MR) ratio exhibits an oscillatory behavior with the Fermi energy. The MR ratio can be tuned by the Fermi energy, number of magnetic barriers and extrinsic RSOI. Specifically, in the presence of magnetic field the spin polarization can be observed, and increases by increasing the magnetic field.     

Spin-dependent Kondo effect induced by Rashba spin-orbit interaction in parallel coupled double quantum dots

Electronic transport through parallel coupled double quantum dots (DQD) with Rashba spin-orbit (RSO) interaction is investigated in Kondo regime by means of the slave-boson mean field approximation at zero temperature. By the co-action of the phase factor deduced by RSO interaction and the magnetic flux penetrating the parallel DQD, an interesting spin-dependent Kondo effect emerges. The molecular state representation theory is used to obtain a detailed understanding of the spin-dependent Kondo effect. It is shown that Quantum interference between the bonding Kondo state and antibonding state, which is modulated by the RSO interaction, plays a crucial role to the density of states and the linear conductance. The magnitude of each spin component conductance can be modulated by the RSO interaction strength. The conductance of each spin component exhibits 4π-periodic function with respect to φR. Moreover, the swap operation in the parallel DQD system can be implemented by tuning the RSO interaction.     

Third harmonic generation in quantum dot with Rashba spin orbit interaction

Here we have investigated the influence of magnetic field and confinement potential on nonlinear optical property, third harmonic generation (THG) of a parabolically confinement quantum dot in the presence of Rashba spin orbit interaction. We have used density matrix formulation for obtaining optical properties within the effective mass approximation. The results are presented as a function of confining potential, magnetic field, Rashba spin orbit interaction strength and photon energy. Our results indicate that an increase of Rashba spin orbit interaction coefficient produces strong effect on the peak positions of THG. The role of confinement strength and spin orbit interaction strength as control parameters on THG have been demonstrated.     

Rashba effect of the bound magnetopolaron in an asymmetry quantum well

Using Pekar variational method, we studied the Rashba effect of the bound magnetopolaron in an asymmetry quantum well. The expression of the ground state energy of the bound magnetopolaron is obtained by theoretical derivation. Due to the influence of the Rashba effect, the ground state energy of the bound magnetopolaron splits into two branches. This phenomenon fully demonstrates that the influence of orbit and spin interaction in different directions on the energy of the polaron is not negligible. Because the contribution of the magnetic field cyclotron resonance frequency to the Rashba spin–orbit splitting is a positive value, the energy spacing becomes larger as the magnetic field cyclotron resonance frequency increases. Due to the presence of impurities, the polaron is more stable than the bare electron state, and the energy splitting is more stable.     

Laser-assisted spin-polarized transport in graphene tunnel junctions

The Keldysh nonequilibrium Green's function method is utilized to theoretically study spin-polarized transport through a graphene spin valve irradiated by a monochromatic laser field. It is found that the bias dependence of the differential conductance exhibits successive peaks corresponding to the resonant tunneling through the photon-assisted sidebands. The multi-photon processes originate from the combined effects of the radiation field and the graphene tunneling properties, and are shown to be substantially suppressed in a graphene spin valve which results in a decrease of the differential conductance for a high bias voltage. We also discuss the appearance of a dynamical gap around zero bias due to the radiation field. The gap width can be tuned by changing the radiation electric field strength and the frequency. This leads to a shift of the resonant peaks in the differential conductance. We also demonstrate numerically the dependences of the radiation and spin valve effects on the parameters of the external fields and those of the electrodes. We find that the combined effects of the radiation field, the graphene and the spin valve properties bring about an oscillatory behavior in the tunnel magnetoresistance, and this oscillatory amplitude can be changed by scanning the radiation field strength and/or the frequency.