Effects of electron–phonon interaction and impurity on optical properties of hexagonal-shaped quantum wires

We have investigated the influence of electron–phonon (e–p) interaction and hydrogenic donor impurity simultaneously on energy difference, binding energy, the linear, nonlinear and total refractive index changes and absorption coefficients of a hexagonal-shaped quantum wire. For this goal, we have used finite-element method (FEM), a compact density matrix approach and an iterative procedure. It is deduced that energy difference and binding energy decrease by changing the impurity position with and without e–p interaction. The dipole matrix elements have complex behaviours in the presence of impurity with and without e–p interaction. The refractive index changes and absorption coefficients increase and shift towards lower energies by enhancing a ₁ with central impurity. In the presence of central impurity, the absorption coefficients and refractive index changes enhance and shift toward higher energies when e–p interaction is considered.     

Effect of electron–phonon interaction on surface states in wurtzite nitride semiconductors under pressure

A variational theory is proposed to study the electronic surface states in semi-infinite wurtzite nitride semiconductors under the hydrostatic pressure. The electronic surface state energy level is calculated, by taking the effects of the electron–Surface–Optical–phonon interaction, structural anisotropy and the hydrostatic pressure into account. The numerical computation has been performed for the electronic surface state energy levels, coupling constants and the average penetrating depths of the electronic surface state wave functions under the hydrostatic pressure for wurtzite GaN, AlN and InN, respectively. The results show that electron–Surface–Optical–phonon interaction lowers the electronic surface state energy levels. It is also found that the electronic surface state energy levels decrease with the hydrostatic pressure in wurtzite GaN and AlN. But for wurtzite InN, the case is contrary. It is shown that the hydrostatic pressure raised the influence of electron–phonon interaction on the electronic surface states obviously. The effect of electron–Surface–Optical–phonon interaction under the hydrostatic pressure on the electronic surface states cannot be neglected, in specially, for materials with strong electron–phonon coupling and wide band gap.     

Influence of electron–phonon interaction on the properties of transport through double quantum dot with ferromagnetic leads

Electronic transport through a vibrating double quantum dot （DQD） in contact with noncollinear ferromagnetic （FM） leads is investigated. The state transition between the two dots of the DQD is excited by an AC microwave driving field. The corresponding currents and differential conductance are calculated in the Coulomb blockade regime by means of the Born-Markov master equation. It is shown that the interplay between electrons and phonons gives rise to phonon-assisted tunneling resonances and Franck-Condon blockade under certain conditions. In noncollinear magnetic configurations, spin-blockade effects are also observed, and the angle of polarization has some influence on the transport characteristics.     

Electron–phonon interaction in fan-shaped quantum dot and quantum wire

The optical phonon modes and electron–optical-phonon interaction in fan-shaped quantum dot and quantum wire are studied with the dielectric continuum (DC) model and separation of variables. The explicit expressions for the longitudinal optical (LO) and interface optical (IO) phonon eigenmodes are deduced. It is found that there exist two types of IO phonon modes: top interface optical (TIO) phonon mode and arc interface optical (AIO) phonon mode, in a fan-shaped quantum dot. After having quantized the eigenmodes, we derive the Hamiltonian operators describing the LO and IO phonon modes as well as the corresponding Fröhlich electron–phonon interaction. The potential applications of these results are also discussed.     

The effects of electron–phonon interaction on anisotropic RKKY interaction in graphene nanoribbon

We study the Ruderman–Kittle–Kasuya–Yosida (RKKY) interaction in doped armchair graphene nanoribbon. The effects of both external magnetic field and electron-Holstein phonon on RKKY interaction have been addressed. RKKY interaction as a function of distance between localized moments has been analyzed. It has been shown that a magnetic field along the z-axis mediates an anisotropic interaction which corresponds to a XXZ model interaction between two magnetic moments. In order to calculate the exchange interaction along arbitrary direction between two magnetic moments, we should obtain both transverse and longitudinal static spin susceptibilities of armchair graphene nanoribbon in the presence of electron-phonon coupling and magnetic field. The spin susceptibility components are calculated using the spin dependent Green’s function approach for Holstein model Hamiltonian. The effects of spin polarization on the dependence of exchange interaction on distance between moments are investigated via calculating correlation function of spin density operators. Our results show the influences of magnetic field on the spatial behavior of in-plane and longitudinal RKKY interactions are different in the presence of magnetic field.     

Tailoring electron–phonon interaction in nanostructures

Efficient design of optoelectronic devices based on electron intersubband transitions depends critically on the knowledge of the intersubband relaxation times which in turn, depends on electron scattering with LO and acoustic phonons. In this article the intersubband scattering time associated with electron–acoustic-phonon interaction has been discussed in terms of phonon mode quantization and phonon confinement with describing the acoustic phonon dispersion relation in detail by introducing the cut-off frequency for each mode. It has been shown that the quantization of acoustic phonon modes lead to an enhancement in electron–phonon scattering time in AlGaAs quantum well structures. Based on the presented model, a new tailoring method has presented to adjust the electron–phonon scattering time in intersubband-transition-based structures while keeping the electronic properties unaltered. Also, we illustrated that for a quantum well with subband energy separation of ∼30 meV, the intersubband scattering time with acoustic-phonon-assisted transitions could be tailored from ∼120 ps to increased value of ∼400 ps or reduced value of ∼45 ps by inserting a 1 nm-thickacoustically soft or hard layers, respectively, while keeping the same the initial energy separation.     

Effect of sputtering pressure on structural and optical properties of silver oxide thin films; Kramers–Kronig method

Silver oxide nano layers were prepared by RF magnetron sputtering on amorphous SiO₂ substrates. O₂ pressure in chamber was varied from 1 to 4 and 7 mTorr during growth process. The effects of different O₂ pressure on structural, morphological and optical properties of the films were investigated by means of X-ray diffraction, scanning electron microscopy, atomic force microscopy and UV–Vis spectroscopy analyses. Optical reflectance measured in the wavelength of 350–950 nm by spectroscopy. Other optical properties and optical band gaps were calculated using Kramers–Kronig relations. The X-ray diffraction measurements showed change in crystalline structure with increasing O₂ pressure. Preferred orientation has been changed to another growth orientation at 4 mTorr O₂ pressure. The Atomic force microscope images showed increasing in roughness consistently by increasing oxygen pressure. The thickness of the thin films decreases (from 217 to 180 nm) with increasing O₂ pressure. Optical results revealed that the highest optical band gap of 3.1 eV and the highest transmittance of?~?80% were achieved at lower O₂ pressure (1 mTorr).     

Optical phonon self-energies in titanium phases: effects of electron–phonon interaction

Temperature-dependent Raman investigations of titanium in the α and pressure-quenched ω-phase have been carried out. The results obtained suggest the possible coexistence of both phases at ambient pressure and low temperatures. Comparison of the low-temperature E_2g phonon self-energies in both phases with simulations based on the calculated electronic structures for α- and ω-Ti implies significant contributions from non-adiabatic electron–phonon interactions.     

Effect of annealing temperature on optical and electrochemical properties of chitosan–ZnO nanostructure

Chitosan–ZnO nanostructures were prepared by chemical precipitation method using different concentration of zinc chloride and sodium hydroxide solutions. Nanorod-shaped grains with hexagonal structure for samples annealed at 300 °C and porous structure with amorphous morphology for samples annealed at 600 °C were revealed in SEM analysis. X-ray diffraction patterns confirmed the hexagonal phase ZnO with crystallite size found to be in the range of ~24.15–34.83 nm. Blue shift of UV–Vis absorption shows formation of nanocrystals/nanorods of ZnO with marginal increase in band gap. Photoluminescence spectra show that blue–green emission band at 380–580 nm. The chitosan–ZnO nanostructures used on surface of a glassy carbon electrode gives the oxidation peak potential at ~0.6 V. The electrical conductivity of chitosan–ZnO composites were observed at 2.1?×?10^?5 to 2.85?×?10^?5?S/m. The nanorods with high surface area and nontoxicity nature of chitosan–ZnO nanostructures observed in samples annealed at 300 °C were suitable as a potential material for biosensing.     

Dispersion and the electron–phonon interaction in a single heterostructure

We investigate the electron–phonon interaction in a polar–polar single heterostructure through the use of the linear combination of hybrid phonon modes, considering the role of longitudinal optical, transverse optical and interface modes, using a continuum model that accounts for both mechanical and electrical continuity over a heterostructure interface. We discuss the use of other models for such systems, such as the bulk phonon (3DP) and dielectric continuum (DC) models, using previously developed sum-rules to explain the limitations on their validity. We find that our linear combination (LC) model gives an excellent agreement with scattering rates previously derived using the 3DP and DC models when the lattice dispersion is weak enough to be ignored, however, when there is a noticeable lattice dispersion, the LC model returns a different answer, suggesting that interface modes play a much greater part in the scattering characteristics of the system under certain conditions. We also discuss the remote phonon effect in polar/polar heterostructures.     

Effects of external magnetic field on the electron Zitterbewegung in the quantum dots and wires with Rashba spin–orbit interaction

We study in this article the effects of external magnetic field on the electron Zitterbewegung in semiconductor quantum dots and wires with parabolic confinements and Rashba spin–orbit interaction. In doing so, we have calculated the dynamics of the expectation value of the position operator by means of the time evolution operator in an appropriate Hilbert space. The results show that the electron Zitterbewegung, its amplitude which is related to the electron confinement, and the period of the electron Zitterbewegung depend on the external magnetic field. We propose that the magnetic field can be used as an external agent to control the electron Zitterbewegung, a fundamental key for experimental detection of this phenomena.     

Spin–orbit interaction effects on plasmons in double coupled quantum wires

We report on collective and single-particle excitations of quasi-one-dimensional (Q1D) electron gas, experiencing Rashba spin–orbit interaction (SOI), and embedded in semiconductor-based coupled symmetrical and asymmetrical biwires. We choose five different and most significant situations regarding the conditions of anisotropy and tunneling between the wires. As the Rashba SOI strength increases, we find extra undamped plasmon modes resulting from the SOI induced spin splitting of those modes appearing in the absence of SOI. We also find these modes remaining in the gap between the spin-down and spin-up SPE continua. We show similar effects occurring on the optical and acoustical plasmon modes; signatures of collective excitations appearing in biwires without tunneling. We find those plasmons related to the spin-down charge density fluctuations being of the most robust modes concerning the increase of the Rashba SOI strength.     

Size dependence of surface optical mode and electron–phonon coupling in ZnO nanocombs

ZnO nanocombs with different sizes are synthesized by simple thermal evaporation methods. Scanning electron microscopy and transmission election microscopy testify the growth of single crystal ZnO nanocombs along [0 0 0 2] direction. The temperature-dependent Raman spectra show that the intensity of surface optical (SO) modes in ZnO nanocombs obviously increases with declining measure temperatures. With the decrease of diameters, the frequency of SO modes shows a blue shift due to the passivation of surface states. The resonant Raman scattering shows that the strength of electron–phonon coupling increases with decreasing size. Calculated on size-dependent electron–phonon interaction energy agrees well with measured values for a large size range. The origin of electron–phonon coupling in ZnO nanocombs is also discussed.     

Surface phonon–polaritons in rectangular quantum wires of polar ternary mixed crystals

In this paper, the dispersion relations of surface phonon–polaritons in freestanding rectangular quantum wire systems of polar ternary mixed crystals are derived. The numerical calculations for Al_xGa_1−xAs and Zn_xCd_1−xSe quantum wire systems are performed. The results reveal that the frequencies of surface phonon–polariton modes are sensitive to the geometric structures of the quantum wires, the wave-vectors in z-direction, and the compositions of the ternary mixed crystal materials. The effects of the “two-mode” and “one-mode” behaviors of the ternary mixed crystals on the surface phonon–polariton modes are also discussed.     

Theoretical examination of electron–phonon interaction and superconductivity in the hexagonal pnictide SrPtAs

We have calculated the structural and electronic properties of SrPtAs in a hexagonal KZnAs-type of crystal structure using a generalized gradient approximation of the density functional theory and the ab initio planewave pseudopotential method. These results are used to further calculate the phonon dispersions curves and the phonon density of states using a linear response approach based on the density functional theory. Using the electronic and phonon results, the electron–phonon coupling is computed to be of the intermediate strength of 0.78. In large part, this is contributed by the phonon modes dominated by the vibrations of Pt and As atoms. The superconducting critical temperature is estimated to be 1.9 K, in good accord with its experimental value of 2.4 K.     

Effect of SnI2 on the thermal and optical properties of Ge–Se–Te glasses

A systematic series of (Ge₂₀Se₁₅Te₆₅)_1?x–(SnI₂)_x (x = 0, 0.05, 0.1, 0.15) chalcogenide glasses have been prepared. The amorphous nature can be confirmed by XRD and SEM. With the SnI₂ content increasing, the indirect optical band gaps are decreased from 0.662 to 0.622 eV according to Tauc laws. The introduction of SnI₂ makes the glasses much easier to prepare and more stable against crystallization, making them drawable as optical fibers. The highest ΔT (130 °C) value for (Ge₂₀Se₁₅Te₆₅)_0.9–(SnI₂)_0.1 glass composition can be obtained. A slight red-shifting of the long-wavelength cutting-off edge from 18.4 to 19.4 μm was shown and it seems that SnI₂ in these glasses offers the improvement in the far-infrared properties.     

Electronic Raman scattering and the electron–phonon interaction in YB6

Electronic Raman scattering in YB₆ and in its structural and electronic analog LaB₆ has been studied in the temperature range of 10–730 K. The experimental spectra have been compared to those calculated on the basis of ab initio band structures with renormalization owing to the electron–phonon interaction. Good agreement between the calculation and experiment for LaB₆ has been obtained throughout the entire temperature range. This allows the determination of the coupling constant λ _ep = 0.25. To satisfactorily describe the spectra of electronic light scattering in YB₆, it is necessary to introduce an additional electron relaxation channel. In this case, the estimate of the electron–phonon coupling constant λ _ep is no more than 0.4; for this reason, a high superconducting transition temperature cannot be explained only by the phonon mechanism.     

Bias-dependent bandwidth of the conductance in the presence of electron–phonon interaction

We study the electronic transport in the presence of electron–phonon interaction (EPI) for a molecular electronic device. Instead of mean field approximation (MFA), the related phonon correlation function is conducted with the Langreth theorem (LT). We present formal expressions for the bandwidth of the electron’s spectral function in the central region of the devices, such as quantum dot (QD), or single molecular transistor (SMT). Our results show that the out-tunneling rate depends on the energy, bias voltage and the phonon field. Besides, the predicted conductance map, behaving as a function of bias voltage and the gate voltage, gets blurred at the high bias voltage region. These EPI effects are consistent with the experimental observations in the EPI transport experiment.