共查询到20条相似文献,搜索用时 15 毫秒
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Seredin P. V. Goloshchapov D. L. Zolotukhin D. S. Lenshin A. S. Khudyakov Yu. Yu. Mizerov A. M. Timoshnev S. N. Arsentyev I. N. Beltyukov A. N. Leiste Harald Kukushkin S. A. 《Semiconductors》2020,54(5):596-608
Semiconductors - A set of structural and spectroscopic methods of diagnostics is used to study the influence of a nanoporous silicon (por-Si) transition layer on the practical implementation and... 相似文献
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Lutsenko E. V. Rzheutski M. V. Vainilovich A. G. Svitsiankou I. E. Shulenkova V. A. Muravitskaya E. V. Alexeev A. N. Petrov S. I. Yablonskii G. P. 《Semiconductors》2018,52(16):2107-2110
Semiconductors - The effect of molecular-beam epitaxy (MBE) growth conditions on properties of AlN epitaxial layers was investigated resulting in determination of optimal substrate temperature and... 相似文献
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Semiconductors - The studies of the growth kinetics of GaN layers grown on nitridated Si(111) substrates by plasmaassisted molecular beam epitaxy are presented. The nucleation and overgrowth of the... 相似文献
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Si基氨化ZnO/Ga2O3薄膜制备GaN纳米线 总被引:1,自引:0,他引:1
利用射频磁控溅射法在Si(111)衬底上溅射ZnO中间层和Ga2O3薄膜,然后在管式炉中常压下通氨气对ZnO/Ga2O3薄膜进行氨化,高温下ZnO层在氨气气氛中挥发,而Ga2O3薄膜和氨气反应合成出GaN纳米线.X射线衍射测量结果表明利用该方法制备的GaN纳米线具有沿c轴方向择优生长的六角纤锌矿结构.利用扫描电子显微镜、透射电子显微镜、傅里叶红外透射谱、能量弥散谱及选区电子衍射观测并分析了样品的形貌、成分和晶格结构.研究发现ZnO层的挥发有利于Ga2O3和NH3反应合成GaN纳米线. 相似文献
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利用射频磁控溅射法在Si(111)衬底上溅射ZnO中间层和Ga2O3薄膜,然后在管式炉中常压下通氨气对ZnO/Ga2O3薄膜进行氨化,高温下ZnO层在氨气气氛中挥发,而Ga2O3薄膜和氨气反应合成出GaN纳米线.X射线衍射测量结果表明利用该方法制备的GaN纳米线具有沿c轴方向择优生长的六角纤锌矿结构.利用扫描电子显微镜、透射电子显微镜、傅里叶红外透射谱、能量弥散谱及选区电子衍射观测并分析了样品的形貌、成分和晶格结构.研究发现ZnO层的挥发有利于Ga2O3和NH3反应合成GaN纳米线. 相似文献
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Kukushkin S. A. Mizerov A. M. Grashchenko A. S. Osipov A. V. Nikitina E. V. Timoshnev S. N. Bouravlev A. D. Sobolev M. S. 《Semiconductors》2019,53(2):180-187
Semiconductors - The photoelectric properties of GaN/SiC/Si(111) and GaN/Si(111) heterostructures grown by plasma-assisted molecular-beam epitaxy under the same growth conditions on identical... 相似文献
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HU Li-jun ZHUANG Hui-zhao XUE Cheng-shan XUE Shou-bin 《半导体光子学与技术》2007,47(1):48-52
Large quantities of gallium nitride(GaN) nanowires have been prepared via ammoniating the Ga2O3 films deposited on the oxidized aluminum layer at 950℃ in a quartz tube. The nanowires have been confirmed as crystalline wurtzite GaN by X-ray diffraction, X-ray photoelectron spectrometry scanning electron microscope and selected-area electron diffraction. Transmission electron microscope (TEM) and scanning electron microscopy(SEM) reveal that the nanowires are amorphous and irregular, with diameters ranging from 30 nm to 80 nm and lengths up to tens of microns. Selected-area electron diffraction indicates that the nanowire with the hexagonal wurtzite structure is the single crystalline. The growth mechanism is discussed briefly. 相似文献
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N. S. Zayats P. O. Gentsar V. G. Boiko O. S. Litvin M. V. Vuychik A. V. Stronski I. B. Yanchuk 《Semiconductors》2009,43(5):590-593
Morphological and optical studies of the Si-doped GaN films (doping level N Si = 1.5 × 1019 cm?3) grown by vapor-phase epitaxy from metalorganic compounds on a sapphire substrate oriented along the c axis are conducted. For the grown GaN films, the following characteristics are obtained: energy of electron transition E 0, absorption coefficient α, refractive index n, and frequencies of transverse and longitudinal optical lattice vibrations characteristic of the crystalline GaN films. 相似文献
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用X射线衍射,扫描电子显微镜和透射电镜/能谱仪分析了Al2O3/TiB2和Al2O3/TiB2/SiCW陶瓷材料在1300℃氧化30小时后氧化层的相组成及显著结构。 相似文献
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Medjdoub F. Sarazin N. Tordjman M. Magis M. di Forte-Poisson M.A. Knez M. Delos E. Gaquiere C. Delage S.L. Kohn E. 《Electronics letters》2007,43(12):691-692
InAlN/GaN is a new heterostructure system for HEMTs with thin barrier layers and high channel current densities well above 1 A/mm. To improve the leakage characteristics of such thin-barrier devices, AlInN/GaN MOSHEMT devices with a 11 nm InAlN barrier and an additional 5 nm Al2O3 barrier (deposited by ALD) were fabricated and evaluated. Gate leakage in reverse direction could be reduced by one order of magnitude and the forward gate voltage swing increased to 4 V without gate breakdown. Compared to HEMT devices of similar geometry, no degradation of the current gain cutoff frequency was observed. The results showed that InAlN/GaN FETs with high channel current densities can be realised with low gate leakage characteristics and high structural aspect ratio by insertion of a thin Al2O 3 gate dielectric layer 相似文献
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Yuen-Yee Wong Wei-Ching Huang Hai-Dang Trinh Tsung-Hsi Yang Jet-Rung Chang Micheal Chen Edward Yi Chang 《Journal of Electronic Materials》2012,41(8):2139-2144
AlGaN/GaN structures were regrown on GaN templates using plasma- assisted molecular beam epitaxy (PA-MBE). Prior to the regrowth, nitridation was performed using nitrogen plasma in the MBE chamber for different durations (0?min to 30?min). Direct-current measurements on high-electron-mobility transistor devices showed that good pinch-off characteristics and good interdevice isolation were achieved for samples prepared with a 30-min nitridation process. Current?Cvoltage measurements on Schottky barrier diodes also revealed that, for samples prepared without nitridation, the reverse-bias gate leakage current was approximately two orders of magnitudes larger than that of samples prepared with a 30-min nitridation process. The improvement in the electrical properties is a result of contaminant removal at the regrowth interface which may be induced by the etching effect of nitridation. 相似文献
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A. Martínez J. Morales P. Salas C. Angeles-Chávez L.A. Díaz-Torres E. De la Rosa 《Microelectronics Journal》2008,39(3-4):551-555
The influence of the solvent ratio in the hydrothermal synthesis of co-doped Y2O3:Yb3+–Er3+, via CTAB complex, is presented. The nanophosphors for two different ethanol/water solvent ratios, 1:1 and 1:3, shown the following features: the samples exhibit cubic phase, TEM image of the sample synthesized using a 1:3 solvent ratio shows a homogeneous nanofibers morphology in opposition with the sample obtained from a 1:1 solvent ratio which reveals different morphologies prevailing big irregular particles. In both cases the absorption spectra are similar as well as the upconversion emission. These results suggest that the solvent ratio plays an important role in the morphology and on the luminescence properties of the nanostructured materials. 相似文献
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G. L. Waytena H. A. Hoff R. R. Wolcott P. R. Broussard C. L. Vold Clinton B. Lee 《Journal of Electronic Materials》1995,24(3):189-195
Transmission electron microscopy was used to analyze the microstructure of YBa2Cu3O7−x/Y2O3/YBa2Cu3O7−x trilayer structures deposited by off-axis sputtering on MgO substrates with varying degrees of roughness. Substrate surface
hillocks with a peak-to-valley height of about 4.5 nm were found to contribute to strain that extended through the film and
disrupted the smoothness of the Y2O3 layer. In some cases, these hillocks served as nucleation sites for yttria precipitates. Such defects may seriously jeopardize
the realization of weak-link Josephson junctions. 相似文献
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AlGaN/GaN metal-oxide-semiconductor (MOS) capacitor structures using atomic layer deposited high-dielectric-constant (High-k) Al2O3/La2O3 bilayer films as dielectric have been investigated using high-frequency capacitance-voltage measurement. The stable thickness and uniform surface morphology of the bilayer films with different La/Al deposition cycle ratio (La/Al ratio) were observed after rapid thermal annealing by spectroscopic ellipsometry and atomic force microscopy, respectively. We have found that with a decrease of the La/Al ratio, the dipole layer observed by X-ray photoelectron spectroscopy at Al2O3/La2O3 interfaces is close to the surface of semiconductor and the flat band voltage shifts to the negative direction. Furthermore, the dramatic drop in dielectric constant of the films as La/Al ratio decrease was caused by the formation of La(OH)3 in La2O3. Finally, the reason for the flat band voltage shifts, which is based on the dielectric constant of Al2O3 and La2O3 comprising the position of dipole layer in the dielectric films, is proposed. 相似文献
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采用分子束外延(MBE)生长方法,使用γ-Al2O3材料作为新型过渡层,在Si(∞1)衬底上获得了没有裂纹的GaN外延层,实验结果表明使用γ-Al2O3过渡层有效地缓解了外延层中的应力.通过生长并测试分析几种不同结构的外延材料,研究了复合衬底γ-Al2O3/Si(001)生长GaN情况,得到了六方相GaN单晶材料,实现了GaN c面生长.预铺薄层Al及高温AlN层可以提高GaN晶体质量,低温AlN缓冲层可以改善GaN表面的粗糙度.为解决Si(001)衬底上GaN的生长问题提供了有益的探索. 相似文献