全方位离子注入与沉积技术及其工业机的研制

全方位离子注入与沉积（Plasma immersion ion implantation and deposition,PIIID）技术发展到现在,已经逐步走向工业化应用。本文介绍了全方位离子注入与沉积技术的原理,探讨了全方位离子注入与沉积工业机应该具备的功能,介绍了研制成功的全方位离子注入与沉积设备的结构和实施效果,其脉冲阴极弧等离子体源沉积速率达到2．9A／s,IGBT固体开关调制器输出电压达到10kv,能够一次处理多个工业零件。     

铝合金、钛合金的全方位离子注入与沉积复合处理工艺研究

铝合金、钛合金等材料具有许多优良性能,广泛用于航空、航天、舰艇及能源化工等工业部门,但是这两种材料的耐磨损性能较差。本研究利用了全方位离子注入与沉积（PIII＆D）技术来强化处理这些合金表面,采用离子注入＋过渡层＋耐磨损层的复合强化处理工艺,通过摩擦磨损试验来研究不同的过渡层结构和厚度对磨损性能的影响。实验结果表明,通过优化过渡层结构和厚度,耐磨损性能有了很大的提高。     

磁过滤等离子体沉积和注入技术

利用阴极真空弧放电技术能够产生高密度的金属等离子体。经过90度的磁过滤器，可以除去金属等离子体中的大颗粒微粒，从而为制备高质量的、致密的各种薄膜提供了一种全新的技术。利用该技术制备薄膜具有非常广泛的应用。本文介绍了阴极真空弧放电技术的应用，以及磁过滤等离子体沉积和注入装置及其应用。     

用于材料表面强化处理的第三代多功能PⅢ装置

第三代多功能等离子体浸没离子注入（PⅢ）装置的强流脉冲阴极弧金属等离子体源既具有强的镀膜功能，同时也具有强的金属离子注入功能；它的脉冲高压电源能输出大的电流；并可获得高的注入剂量均匀性。该装置既能执行离子注入，又能把离子注入与溅射沉积，镀膜结合在一起，形成多种综合笥表面改性工艺。本文描述了它的主要设计原则、主要部件的特性以及近期的研究工作成果。     

钇离子束动态增强沉积氮化钛膜

在膜层上接收注入钇离子和沉积钛原子比例Y^ :Ti=1:2的条件下，采用钇离子束动态增强沉积方法，在纯铁等基体上制备氮化钛膜层试样。对试样予以电化学测试和AES、XRD分析。XRD结果未发现钇单质或氮化钇的衍射峰。载能金属离子的动态增强沉积作用产生了界面混合效果，形成较宽的过渡层。动态增强沉积试样比非增强沉积试样有更强的抗电化学腐蚀能力。     

偏压对ECR-微波等离子增强沉积ZrN薄膜的结构及性能的影响

利用ECR-微波等离子溅射沉积技术加不同偏压在45#钢基体上制备了ZrN薄膜。利用X射线衍射仪(XRD)、透射电子显微镜(TEM)对薄膜的微观组织结构进行了分析。结果表明,无偏压时薄膜为非晶膜,随着偏压的升高,薄膜呈ZrN晶体结构。利用扫描电镜(SEM)、原子力显微镜(AFM)测试了薄膜表面形貌。薄膜表面平整,但仍存在局部缺陷;粗糙度(RMS)在0.311—0．811nm之间变化,轮廓算术平均值(Ra)在0．239-0．629nm之间变化。同时利用电化学极化实验在0．5mol／LNaCl溶液中测试了基体及薄膜的耐蚀性能,基体自腐蚀电位Ecorr为-512．3mV,样品Ecprr在-400．3--482．6mV之间变化,45#钢基体自腐蚀电流Icorr为9．036μA,样品Icorr。在0．142—0．694μA之间变化。并讨论了偏压对薄膜的微观组织和耐蚀性能产生影响的原因。     

Development and experimental study of large size composite plasma immersion ion implantation device

Plasma immersion ion implantation(PⅢ) overcomes the direct exposure limit of traditional beamline ion implantation, and is suitable for the treatment of complex work-piece with large size. PⅢ technology is often used for surface modification of metal, plastics and ceramics. Based on the requirement of surface modification of large size insulating material, a composite full-directional PⅢ device based on RF plasma source and metal plasma source is developed in this paper. This device can not only realize gas ion implantation, but also can realize metal ion implantation, and can also realize gas ion mixing with metal ions injection. This device has two metal plasma sources and each metal source contains three cathodes. Under the condition of keeping the vacuum unchanged, the cathode can be switched freely. The volume of the vacuum chamber is about 0.94 m~3, and maximum vacuum degree is about 5?×?10~(-4) Pa. The density of RF plasma in homogeneous region is about 10~9 cm~(-3), and plasma density in the ion implantation region is about 10~(10) cm~(-3). This device can be used for large-size sample material PⅢ treatment, the maximum size of the sample diameter up to 400 mm. The experimental results show that the plasma discharge in the device is stable and can run for a long time. It is suitable for surface treatment of insulating materials.     

PIIID技术制备Ti/DLC纳米多层薄膜

采用等离子体浸没离子注入与沉积（PIII＆D）技术在2Cr13钢表面制备了Ti／DLC纳米多层薄膜,分析了膜层的微观结构和机械特性。实验结果表明：纳米多层膜具有完整、清晰的调制层结构,薄膜的显微硬度均得到明显的提高,硬度较低的膜层具有较好的膜基结合强度和优良的摩擦性能,从综合性能看：纳米多层薄膜保持了类金刚石（DLC）薄膜低摩擦系数的特性,具有良好的承载能力以及膜-基结合特性。     

等离子体浸没离子注入圆筒内表面的时空尺度

等离子体浸没离子注入与工件外表面的注入不同 ,存在空间和时间上的尺度。研究结果表明 ,由于内腔 ,如内筒的有限尺寸 ,使注入电压的利用率降低 ,同时使内部等离子体快速耗尽 ,对于特定的内筒 ,利用提高注入电压从而提高注入能量只能在一定的电压范围内实现。在典型的外表面注入工艺条件下 ,内表面离子的耗尽速度是惊人的。如在对于直径 2 0cm的圆筒在 30kV、2× 10 15ions/cm3的条件下 ,等离子体耗尽时间仅为 0 .5 5 μs ,这个时间甚至小于多数脉冲电源的上升沿时间。结果表明 ,内部等离子体源的硬件结构可能是一种有效的解决方法。     

Etching and structure changes in PMMA coating under argon plasma immersion ion implantation

A thin (120 nm) polymethylmethacrylate coating was treated by plasma immersion ion implantation with Ar using pulsed bias at 20 kV. Ellipsometry and FTIR spectroscopy and gel-fraction formation were used to detect the structure transformations as a function of ion fluence. The kinetics of etching, variations in refractive index and extinction coefficient in 400-1000 nm of wavelength, concentration changes in carbonyl, ether, methyl and methylene groups all as a function of ion fluence were analyzed. A critical ion fluence of 10¹⁵ ions/cm² was observed to be a border between competing depolymerization and carbonization processes. Chemical reactions responsible for reorganization of the PMMA chemical structure under ion beam treatment are proposed.     

MEVVA离子源及其应用

综述了ＭＥＶＶＡ离子源在金属硅化物，磁性薄膜，准晶材料和表面复合材料的制备以及电催化，抗腐蚀，抗高温氧化，抗疲劳和磷酸盐玻璃抗风化等研究领域的应用。     

等离子体浸没离子注入绝缘材料的研究

等离子体浸没离子注入是一种新形式的离子注入技术,是利用负偏压工件周围形成的等离子体鞘层进行离子加速、进而获得离子注入.等离子体注入的前提条件是工件导电,因此对于绝缘材料的等离子体注入可能存在问题.本文从理论和实际处理的角度论证了绝缘材料等离子体注入的可能性、可操作性,并给出了一些实际例证.     

Influence of the residual oxygen in the plasma immersion ion implantation (PI3) processing of materials

In this work, we investigated the effects of the contaminants present in the vacuum chamber of the PI3 system, in particular, the residual oxygen, which results in the formation of the oxide compounds on the surface and hence is responsible for the high implantation energies required to achieve reasonably thick treated layers. We used a mass spectrometer (RGA) with a quadruple filter to verify the composition of the residual vacuum and pressure of the elements present in the chamber. Initially we found a high proportion of residual oxygen in a vacuum with a pressure of 1 × 10⁻³ Pa. Minimizing the residual oxygen percentage in about 80%, by efficient cleaning of the chamber walls and by improving the gas feeding process, we mitigated the formation of oxides during the PI3 process. Therefore we achieved a highly efficient PI3 processing obtaining implanted layers reaching about 50 nm, even in cases such as an aluminum alloy, where is very difficult to nitrogen implant at low energies. We performed nitrogen PI3 treatment of SS304 and Al7075 using pulses of only 3 kV and 15 × 10⁻⁶ s at 1 kHz with an operating pressure of 1 Pa.     

Metal ion implantation in inert polymers for strain gauge applications

Metal ion implantation in inert polymers may produce ultra-thin conducting films below the polymer surface. These subsurface films are promising structures for strain gauge applications. To this purpose, polycarbonate substrates were irradiated at room temperature with low-energy metal ions (Cu⁺ and Ni⁺) and with fluences in the range between 1 × 10¹⁶ and 1 × 10¹⁷ ions/cm², in order to promote the precipitation of dispersed metal nanoparticles or the formation of a continuous thin film. The nanoparticle morphology and the microstructural properties of polymer nanocomposites were investigated by glancing-incidence X-ray diffraction and transmission electron microscopy (TEM) measurements. At lower fluences (<5 × 10¹⁶ ions/cm²) a spontaneous precipitation of spherical-shaped metal nanoparticles occurred below the polymer top-surface (∼50 nm), whereas at higher fluences the aggregation of metal nanoparticles produced the formation of a continuous polycrystalline nanofilm. Furthermore, a characteristic surface plasmon resonance peak was observed for nanocomposites produced at lower ion fluences, due to the presence of Cu nanoparticles. A reduced electrical resistance of the near-surface metal-polymer nanocomposite was measured. The variation of electrical conductivity as a function of the applied surface load was measured: we found a linear relationship and a very small hysteresis.