The incubation time for hole formation due to electromigration in Al and Al/Cu/Al thin films

Transmission electron microscope observations of hole formation in Al and Al/Cu/Al thin film conductors carrying high current densities have revealed the presence of an incubation period for hole growth. The temperature dependence of this incubation period for pure aluminum conductors has been determined and found to follow an Arrhenius relationship with an activation energy of 0.55 ev ± 0.1 ev.     

Al/Ag/Al复合薄膜电极的抗氧化性和电性能研究

为开发大尺寸场发射显示器需要的能承受高温热处理的薄膜电极,以Al作为Ag层的保护层和与玻璃衬底的粘附层,采用直流磁控溅射制备了Al/Ag/Al复合薄膜及其电极.采用XRD、AFM、光学显微镜和电性能测试系统,研究不同温度热处理对复合薄膜和电极结构、表面形貌和电性能的影响.由于表面致密的Al2O3膜的保护,使得加热退火(<600℃)不会对Al/Ag/Al薄膜和电极造成明显的氧化,然而Al层与Ag层发生的界面扩散和固相反应增大了电极的电阻率(从5.0×10~(-8) Ω·m 上升至23.6×10~(-8) Ω·m).另外热处理温度足够高时(500℃、600℃),Ag原子向表面的扩散一定程度上降低了电极的化学稳定性.尽管如此,与Cr/Cu/Cr薄膜电极相比Al/Ag/Al薄膜电极仍然是一种能够承受高温热处理并且保持较低电阻率的新型电极.     

NH4Cl对机械活化Al粉燃烧合成AlN的控制

添加NH4Cl到经由高能球磨制得的机械活化铝粉中后,铝粉在空气中于室温下即可发生自燃反应.本研究通过含有不同量NH4Cl的机械活化铝粉的自燃制得了Al2O3-AlN疏松粉末,并研究了NH4CL添加量对燃烧产物成分和结构的控制.结果表明:NH4Cl不仅控制了产物的形貌,而且改变了铝粉的氮化初理.在NH4Cl添加量为3%～...     

Cr/Cu/Al/Cr薄膜电极的防氧化性能

采用Al作为Cu导电层的主要防氧化保护层,在普通浮法玻璃上利用磁控溅射和湿法刻蚀技术制备Cr/Cu/Al/Cr复合薄膜及其电极,研究不同的热处理温度对复合薄膜及其电极的结构、表面形貌和导电性能的影响。由于有Al层作为保护层,在热处理过程中,Al先与穿过Cr保护层的氧进行反应,从而可以更有效地保护Cu膜层在较高的温度下不被氧化,所制备的薄膜在经过600℃的热处理之后仍然具有较好的导电性能。而对于Cr/Cu/Al/Cr电极,侧面裸露的金属层在热处理过程中的氧化是其导电性能逐渐下降的主要原因,退火温度超过500℃之后,电极侧面裸露部分的氧化范围不断往电极的中间扩散,导致了薄膜电极导电性能显著恶化。虽然如此,Cr/Cu/Al/Cr薄膜电极在430℃附近仍然具有较好的导电性能,电阻率为7.3×10-8Ω.m,符合FED薄膜电极的要求。以此薄膜电极构建FED显示屏,通过发光亮度均匀性的测试验证了Cr/Cu/Al/Cr电极的抗氧化性。     

高压电极铝箔腐蚀孔洞模型的探讨

利用SEM、TEM观测了高压腐蚀铝箔表面和横截面的形貌,介绍了3种高压电极铝箔的腐蚀孔洞模型:圆孔、方孔、条状凹槽;通过对当前市场上国内、日本的高压高比容电极箔腐蚀孔洞的实际形貌特征进行对比分析,发现:具有实际意义的理想腐蚀孔洞应当具有介于条状凹槽和圆孔之间的形状;通过改进电蚀技术来提高高压电子铝箔的比电容还有相当大的空间;在电蚀过程中抑制簇状并孔发生并促进线状并孔发生以使得腐蚀孔洞呈现条状沟槽形状是今后高压电极箔制造技术的改进与发展方向之一。     

A study of aluminum oxide thin films prepared by atmospheric-pressure chemical vapor deposition from trimethylaluminum + oxygen and/or nitrous oxide

A significant improvement in the deposition rate of thin films of aluminum oxide, using trimethylaluminum and oxygen at a substrate temperature of 570° C, is demonstrated. Hard, transparent, strongly adherent films of refractive index 1.62–1.63 were consistently achieved with controlled growth rates from 15 Å/sec to 94 Å/sec, depending upon the Al mole fraction. Systematic analysis of the growth rate data offers insight into the complicated kinetics of the deposition process. In comparison, the films produced from the trimethylaluminum and nitrous oxide system were of inferior quality.     

RIE模式干法刻蚀ADS产品铝腐蚀改善研究

Full-in-cell(FIC)产品信号线SD层结构为Mo-Al-Mo结构,使用Reactive Ion Etching(RIE)模式干法刻蚀设备进行N+Etch时,氯的化合物会吸附在信号线中的Al线侧壁及光刻胶的表面,当玻璃基板离开刻蚀腔体接触到空气,遇到水分发生水解反应,对Al线造成腐蚀,严重影响产品特性。本文在RIE刻蚀模式腔体内采用刻蚀条件变更改善Al腐蚀现象,通过对刻蚀的前处理步骤,后处理步骤以及去静电步骤的参数包括压强、功率和时间以及气体流量比进行实验设计并对数据进行分析。实验结果表明当后处理步骤2 000 W,O_2/SF_6比例为2 000mL·min~(-1)/50mL·min~(-1),压强为200mt(1mt=0.133Pa),Time为15s为最优条件,可以彻底改善Al腐蚀现象。此条件TFT特性方面更加优越,Dark I_(on)为1.91μA,Photo I_(off)为4.1pA。     

铝电解电容器用低压箔接触电阻超标分析

通过金相分析和铝箔铆接后的接触电阻对比,研究了铝箔的腐蚀形貌、铝箔表面粉状物、氧化膜厚度、引线质量、铆接工序控制等对接触电阻的影响。提出了降低接触电阻的几点建议:①采用多级变频复合腐蚀工艺,以得到“乔木状”的蚀孔。②改进处理工艺,减少粉状物的产生。③调整工艺控制条件,改善腐蚀形貌。     

机械活化燃烧合成AlN-Al_2O_3复合陶瓷粉

在催化剂氯化铵的作用下,将高能球磨机械活化后的工业铝粉置于空气中自燃,制备出了AlN质量分数约为80%的AlN-Al2O3复合粉体。通过对原始铝粉和球磨铝粉的形貌进行对比分析,探讨了球磨对铝粉的机械力化学效应。借助XRD和扫描电镜分析了燃烧产物的物相、形貌和结构,结果表明,生成的AlN颗粒主要集中于燃烧产物中心部,粒径为2μm;生成的Al2O3颗粒则主要分布于燃烧产物外表面,粒径为100nm。     

Elucidating the Metal-Induced Crystallization and Diffusion Behavior of Al/a-Ge Thin Films

As used in wafer-level bonding in microelectromechanical system (MEMS) devices, the eutectic Al/a-Ge bilayer is characterized by its remarkable hermetic sealing after annealing. For MEMS packaging, this study investigates metal-induced crystallization (MIC) of the amorphous Ge and the layer exchange of Al and Ge, mainly by scanning electron microscopy (SEM), energy-dispersive x-ray (EDX) analysis, and x-ray photoelectron spectroscopy (XPS). A kinetic mechanism to explain the layer exchange of Al and Ge is developed. Experimental results indicate that round-shaped extrusions form on the upper surface of the Ge layer when the bilayer is annealed at 400°C, i.e., close to the Al-Ge eutectic temperature. The morphology and the formation of the extrusions are also discussed. Finally, the bilayer is tested by immersion in red ink, with these results indicating that no red ink penetrates the bonding area of two bonded bilayer films. Therefore, results of this study demonstrate the feasibility of applying the eutectic Al/a-Ge bilayer to MEMS as a hermetic sealing material.     

Ohmic contact using the Si nano-interlayer for undoped-AlGaN/GaN heterostructures

Excellent ohmic characteristics for undoped-AlGaN/GaN heterostructures have been achieved by using a Si nano-interlayer: a 1-nm Si layer has been evaporated followed by Ti/Al/Mo/Au evaporation. A contact transfer resistance of 0.18 Ω-mm and a specific contact resistivity of 1 × 10⁻⁶ Ω-cm² have been achieved along with excellent surface morphology at an optimized annealing temperature (800°C). Both ohmic contact characteristics and surface morphology are significantly better than those obtained without the Si nano-interlayer. Auger depth profiles and temperature-dependent current-voltage characteristics were investigated to understand ohmic formation. It is suggested that titanium silicide formation at the interface during rapid thermal annealing lowers the barrier height and enhances thermionic emission current.     

Strategies for Realizing Rechargeable High Volumetric Energy Density Conversion-Based Aluminum–Sulfur Batteries

Aluminum–sulfur batteries (ASBs) are deemed to be alternatives to meet the increasing demands for energy storage due to their high theoretical capacity, high safety, low cost, and the rich abundances of Al and S. However, the challenging problems including sluggish conversion kinetics, inferior electrolyte compatibility, and potential dendrite formation are still remained. This review comprehensively focuses on summarizing the specific strategies from polysulfide shuttling inhibition to form smooth anodic Al activation/deposition. Especially, innovations in cathodic side for achieving electrochemical kinetic modulations, electrolyte optimizations, and anodic interface mediations are discussed. Upon detailed elaborating the formation process, influencing factors, and their interactions in the Al–S electrochemistry, a comprehensive summary of their causative mechanisms and the corresponding strategies are provided, including optimization of electrolytes, innovative in situ detections, and precise electrocatalytic strategies. Based on such a systematic understanding in the Al–S electrochemistry, the possible electrochemical reaction mechanism is deciphered more clearly and enlightened practical strategies on the future development of stable ASBs. Furthermore, future opportunities and directions of high-performance conversion-based Al–S batteries for large-scale energy storage applications are highlighted.     

铝包覆纳米二氧化钛的制备及其形态研究

纳米二氧化钛是太阳能光电转化过程中普遍使用的材料,已有研究证明对其进行铝包覆可以很好地提高其光电性能。为了方便根据铝元素形态确定包铝改性过程中铝的添加量,以及分析铝元素各形态对改性纳米二氧化钛功能的改进作用,通过硫酸铝对纳米二氧化钛进行表面无机改性,并采用X射线衍射仪、红外光谱仪、热重分析仪和自带能谱的扫描电镜等手段对改性前后的纳米二氧化钛进行表征来确定包铝后的纳米二氧化钛中的铝元素形态。实验结果表明:经铝改性后的纳米二氧化钛表面包覆物以AlOOH和无定型Al(OH)3的形式存在,且AlOOH、Al(OH)3、TiO2三者的个数比近似为1∶1.5∶7.5,表面包覆物以Al(OH)3为主。     

Comparison between TiAl and TiAlNiAu ohmic contacts to n-type GaN

We report a comparison between Ti/Al and Ti/Al/Ni/Au ohmic contacts in terms of contact resistivity, thermal stability, depth profile, and surface morphology. The metals were deposited by conventional electron-beam evaporation, and then annealed at 900°C for 30 s in a N₂ atmosphere. The lowest value for the specific contact resistivity was obtained using Ti/Al/Ni/Au metallization. Ti/Al/Ni/Au contacts showed no increase in contact resistivity after aging for five days at 600°C in an air atmosphere. Examination of the surface morphology using atomic force microscopy revealed that the surface roughness was clearly better in the case of Ti/Al/Ni/Au contacts. X-ray photoelectron spectroscopy was also employed and gave primary results of Ti/Al/Ni/Au contact formation.     

Al–Co reactions in multilayer films: first stages and selective formation of new (metastable) phases

Reactive diffusion in Al/Co multilayers has been analyzed using differential scanning calorimetry, ramped resistance measurements and X-ray diffraction. Two major points appear: (1) the first phase formed is Al₉Co₂. This is in agreement both with the Cu₃Au rule on phase selection and former studies on Al/Co bilayer films. However, we show that the formation of this phase proceeds in two distinct steps. The first one is limited to a thin interfacial layer. The second is the diffusion-controlled growth of this layer until total consumption of Al. The second phase formed is the metastable decagonal Al₁₃Co₄ quasicrystal. It is observed for Al/Co ratios ranging from 13/4 to 5/2. In this composition range several stable phases are reported. Reactive diffusion in multilayers appear thus as a very powerful tool to promote selective formation of new (metastable) phases.     

不锈钢表面镀铜对铝/钢YAG激光焊接的影响

对0.3 mm厚的316L不锈钢/6061铝合金进行了脉冲激光(YAG)封边焊接试验。为了改善铝钢的冶金结合,对不锈钢表面进行了镀Cu处理,对比了镀铜前后的焊接情况;利用光学显微镜、扫描电镜及能谱分析等方法研究了接头界面区显微组织特征、熔合情况、元素分布和断口形貌。结果表明:对于铝/钢直接焊接,焊接电流I=130 A,激光脉宽D=4 ms,激光频率f=13 Hz,焊接速度V=150 mm/min,气体流量25 L/min,零离焦时,焊缝平整、成型美观。镀铜层形成了铝钢焊接的过渡层,减缓了界面处液态金属传递,抑制了铁铝之间的熔合,铝钢熔合线向钢一侧偏移。不锈钢未镀铜情况下,焊接接头组织主要由靠近铝一侧的针状或粗大板条状Fe2Al5及靠近钢一侧的FeAl 组成;镀铜后Cu主要固溶到Fe中,接头界面组织主要由(Fe,Cu)2Al5、(Fe,Cu)3Al组成。镀铜前后接头拉伸断口形貌未发生明显变化,然而,接头强度明显提高,提高约40.32%,达到15.63 N/mm。     

Theoretical and experimental investigation of aluminum‐boron codoping of silicon

We present a detailed study on aluminum‐boron codoping of silicon by alloying from screen‐printed aluminum pastes containing boron additives (Al–B pastes). We derive an analytical model for the formation of the Al–B acceptor profiles by quantitatively describing (i) the composition of the Al–B–Si melt and (ii) the incorporation of Al and B acceptor atoms into the recrystallizing Si lattice. We show that measured Al–B dopant profiles can be excellently described by this model, which therefore offers a straightforward method for the comprehensive investigation of alloying from Al–B pastes. The formation of a characteristic kink in the Al–B dopant profile curve can thus be ascribed to the exhaustion of the B additive dissolution during alloying. By intentionally adding elemental B powder to an Al paste, we demonstrate that only a low percentage of the B powder actually dissolves into the melt. We show that this incomplete dissolution of the B additive strongly affects the recombination characteristics of Al–B–p⁺ regions and, thus, is an important element of alloying from Al–B pastes. This study therefore provides improved understanding of aluminum‐boron codoping of silicon. Copyright © 2015 John Wiley & Sons, Ltd.     

Effect of annealing temperature on Ti/Al/Ni/Au ohmic contacts on undoped AlN films

The Ti/Al/Ni/Au metals were deposited on undoped AlN films by electron beam evaporation. The influence of annealing temperature on the properties of contacts was investigated. When the annealing temperatures were between 800 and 950℃, the AlN-Ti/Al/Ni/Au contacts became ohmic contacts and the resistance decreased with the increase of annealing temperature. A lowest specific contacts resistance of 0.379 Ω·cm² was obtained for the sample annealed at 950℃. In this work, we confirmed that the formation mechanism of ohmic contacts on AlN was due to the formation of Al-Au, Au-Ti and Al-Ni alloys, and reduction of the specific contacts resistance could originate from the formation of Au₂Ti and AlAu₂ alloys. This result provided a possibility for the preparation of AlN-based high-frequency, high-power devices and deep ultraviolet devices.     

Investigation of Ti/Al and TiN/Al thin films as the stable ohmic contact for p-type 4H-SiC

Interfacial reactions, surface morphology, and current-voltage (I-V) characteristics of Ti/Al/4H-SiC and TiN/Al/4H-SiC were studied before and after high-temperature annealing. It was observed that surface smoothness of the samples was not significantly affected by the heat treatment at up to 900°C, in contrast to the case of Al/SiC. Transmission electron microscopy (TEM) observation of the Ti(TiN)/Al/SiC interface showed that Al layer reacted with the SiC substrate at 900°C and formed an Al-Si-(Ti)-C compound at the metal/SiC interface, which is similar to the case of the Al/SiC interface. The I-V measurement showed reasonable ohmic properties for the Ti/Al films, indicating that the films can be used to stabilize the Al/SiC contact by protecting the Al layer from the potential oxidation and evaporation problem, while maintaining proper contact properties.     

Effects of differential etching and masking resist preparation on the quality of the reactive-ion-etched aluminum and aluminum alloys

The conventional method used for aluminum (Al) and aluminum alloy (Al + Si, Al + Si + Cu) delineation in integrated circuits is mainly by wet chemical etching. Because of its isotropic characteristic, wet chemical etching becomes inadequate for patterning Al metal lines with linewidths narrower than about 4 Μm. In this work, Al and Al alloys (Al + 2% Si; Al + 1% Si + 1% Cu) were reactively etched in SiCl₄ plasma using patterned photoresist as the etch-mask. Resist patterns were generated either by conventional processing methods or by tri-level resist techniques which included hard-baking (200°C, ≤ 30 min), and two consecutive reactive ion etchings in CF₄ and 0₂ plasmas. Masking resists prepared by the tri-level resist technique retained their integrity during exposure to a SiCl₄ plasma, and significantly improved resolution and fidelity of pattern transfer from resist to underlying Al or Al alloy film. The substrate surface of the reactively etched Al + Si + Cu sample was considerably rougher than that of the Al or Al + Si sample due to the high concentration of Cu accumulated at the metal/substrate region during RIE process.