Charging dynamics of a polymer due to electron irradiation： A simultaneous scattering-transport model and preliminary results

<正>We present a novel numerical model and simulate preliminarily the charging process of a polymer subjected to electron irradiation of several 10 keV.The model includes the simultaneous processes of electron scattering and ambipolar transport and the influence of a self-consistent electric field on the scattering distribution of electrons.The dynamic spatial distribution of charges is obtained and validated by existing experimental data.Our simulations show that excess negative charges are concentrated near the edge of the electron range.However,the formed region of high charge density may extend to the surface and bottom of a kapton sample,due to the effects of the electric field on electron scattering and charge transport,respectively.Charge trapping is then demonstrated to significantly influence the charge motion.The charge distribution can be extended to the bottom as the trap density decreases.Charge accumulation is therefore balanced by the appearance and increase of leakage current.Accordingly,our model and numerical simulation provide a comprehensive insight into the charging dynamics of a polymer irradiated by electrons in the complex space environment.     

空间电子辐照聚合物的充电特性和微观机理

空间电子辐照聚合物的充电特性和微观机理是研究和防护航天器聚合物充放电特性的基础.采用蒙特卡罗方法模拟空间电子的散射过程,快二次电子模型模拟二次电子的产生,有限差分法求解电荷连续性方程、电流密度方程和泊松方程的电荷输运过程,俘获过程基于Poole-Frenkel效应来实现.基于电子散射/输运同步模型基础,结合法国国家航空航天科研局(ONERA)的地球同步轨道电子能谱分布理论公式和欧空局(SIRENE)机构的地面实验方法,建立了基于地球同步轨道电子能谱分布的空间多能电子的散射模型.通过空间电子辐照聚合物充电过程的数值模拟,获得了空间电荷密度、电位、电场和空间电位分布.阐明了空间电子辐照聚合物的充电特性和样品微观参数与表面电位的关联性.表面电位特性与实验结果相吻合,单能电子的电位强度高于多能电子的电位.充电达到稳态时,电子迁移率较小时(小于10~(–11)cm~2·V~(–1)·s~(–1)),空间电位绝对值随电子迁移率的降低明显加强;复合率较大时(大于10~(–14)cm~3·s~(–1)),空间电位绝对值随复合率的增大而增大.研究结果对于揭示空间电子辐照聚合物的充电特性和微观机理、提高航天器充放电故障机理研究水平具有重要科学意义和价值.     

电介质/半导体结构样品电子束感生电流瞬态特性

电子束照射下电介质/半导体样品的电子束感生电流(electron beam induced current,EBIC)是其电子显微检测的重要手段.结合数值模拟和实验测量,研究了高能电子束辐照下SiO2/Si薄膜的瞬态EBIC特性.基于Rutherford模型和快二次电子模型研究电子的散射过程,基于电流连续性方程计算电荷的输运、俘获和复合过程,获得了电荷分布、EBIC和透射电流瞬态特性以及束能和束流对它们的影响.结果表明,由于电子散射效应,自由电子密度沿入射方向逐渐减小.由于二次电子出射,净电荷密度呈现近表面为正、内部为负的特性,空间电场在表面附近为正而在样品内部为负,导致一些电子输运到基底以及一些出射二次电子返回表面.SiO2与Si界面处俘获电子导致界面附近负电荷密度高于周围区域.随电子束照射样品内部净电荷密度逐渐降低,带电强度减弱.同时,负电荷逐渐向基底输运,EBIC和样品电流逐渐增大,电场强度逐渐减小.由于样品带电强度较弱,表面出射电流和透射电流随照射基本保持恒定.EBIC、透射电流及表面出射电流均随束流呈现近似正比例关系.对于本文SiO2/Si薄膜,透射电流随束能的升高逐渐增大并接近于束流值,EBIC在束能约15 keV时呈现极大值.     

非聚焦电子束照射SiO2薄膜带电效应

采用考虑电子散射、俘获、输运和自洽场的三维数值模型, 模拟了低能非聚焦电子束照射接地SiO₂薄膜的带电效应. 结果表明, 由于电子的迁移和扩散, 电子会渡越散射区域产生负空间电荷分布. 空间电荷呈现在散射区域内为正, 区域外为负的交替分布特性. 对于薄膜负带电, 电子会输运至导电衬底形成泄漏电流, 其暂态过程随泄漏电流的增加趋于平衡. 而正带电暂态过程随返回二次电子的增多而趋于平衡. 在平衡态时, 负带电表面电位随薄膜厚度、陷阱密度的增大而降低, 随电子迁移率、薄膜介电常数的增大而升高;而正带电表面电位受它们影响较小.     

空间多能电子辐照聚合物充电过程的稳态特性

空间同步轨道上多能电子辐照聚合物的充电过程及其稳态特性是研究和抑制通信卫星静电放电的基础.在同步电子散射-输运微观模型的基础上,采用具有10—400 keV积分能谱分布的多能电子辐照聚酰亚胺样品,进行了多能电子辐照聚酰亚胺充电过程的数值模拟,获得了空间电荷密度、空间电位、空间电场分布和聚合物样品参数条件下的表面电位和最大场强.结果表明,多能电子与样品发生散射作用并沉积在样品内形成具有高密度的电荷区域分布,同时在迁移和扩散的作用下输运至样品底部形成样品电流;充电达到稳态、电子迁移率较小时(小于10-10cm2·V-1·s-1),表面电位绝对值和充电强度随电子迁移率的降低明显加强,捕获密度较大时(大于1014cm-3),表面电位绝对值和充电强度随捕获密度的增大明显加强;聚合物样品厚度对表面电位和充电强度的影响大于电子迁移率、捕获密度和相对介电常数的影响.研究结果对于揭示空间多能电子辐照聚合物的充电现象及微观机理、提高航天器故障机理研究水平具有重要科学意义和价值.     

入射电子能量对低密度聚乙烯深层充电特性的影响

高能带电粒子与航天器介质材料相互作用引起的深层带电现象, 一直是威胁航天器安全运行的重要因素之一. 考虑入射电子在介质中的电荷沉积、能量沉积分布以及介质中的非线性暗电导和辐射诱导电导, 建立了介质深层充电的单极性电荷输运物理模型. 通过求解电荷连续性方程和泊松方程, 可以得出不同能量 (0.1–0.5 MeV) 电子辐射下, 低密度聚乙烯 (厚度为1 mm) 介质中的电荷输运特性. 计算结果表明, 不同能量的电子辐射下, 介质充电达到平衡时, 最大电场随入射能量的增加而减小; 同一能量辐射下, 最大电场随束流密度的增大而增加. 入射电子能量较低时 (≤ 0.3 MeV) , 最大电场随束流密度的变化趋势基本相同. 具体表现为: 当束流密度大于3× 10^-9 A/m²时, 最大场强超过击穿阈值2×10⁷ V/m, 发生静电放电 (ESD) 的可能性较大. 随着入射电子能量的增加, 发生静电放电 (ESD) 的临界束流密度增大, 在能量为0.4 MeV时, 临界束流密度为6×10^-8 A/m². 当能量大于等于0.5 MeV时, 在束流密度为10^-9–10^-6 A/m²的范围内, 均不会发生静电放电 (ESD) . 该物理模型对于深入研究深层充放电效应、评估航天器在空间环境下 深层带电程度及防护设计具有重要的意义. 关键词： 高能电子辐射 低密度聚乙烯(LDPE) 介质深层充电 电导特性     

对超热电子诱生的磁场分布的估算

利用简化模型估算了电荷分离场及由超热电子逃逸在等离子体表面产生的自生磁场的大小和空间分布.受电荷分离场的影响以及超热电子逃逸数的限制,超热电子产生的环形磁场主要分布于等离子体表面附近的焦斑半径内,仅当超热电子束流很强时(在1μm半径截面内达到kA量级),环形磁场才可以达到10²T量级.一般情况下,由超热电子产生的磁场则极小 关键词： 磁场 超热电子     

Mechanism of electron multiplication due to charging for a SiO2 sample with a buried microstructure in SEM: A simulation analysis

This study investigates the mechanism of electron redistribution and multiplication for a SiO₂ sample with a buried structure in scanning electron microscopy by numerical simulation. The simulation involved electron scattering and internal charge transport in the sample, the tracking of emitted secondary electrons (SEs), and the generation of tertiary electrons (TEs) produced by returned SEs due to charging of the sample. The results show that a buried grounded structure causes a non-uniform distribution of surface potential, and an electric field above the surface. As a result, although the number of escaped SEs above the margin of the buried structure decreases, the number of generated TEs increases more, leading to a final current of electrons that include escaped SEs and increased TEs. This multiplication of SEs might make a crucial contribution to the abnormal negative-charging contrast in SEM. During the electron beam irradiation, the variation in the number of total escaped electrons presents an obvious increase after an initial slight decrease, which corresponded to the transient characteristics of gray levels in SEM images from dark to abnormally bright.     

对超热电子诱生的磁场分布的估算

利用简化模型估算了电荷分离场及由超热电子逃逸在等离子体表面产生的自生磁场的大小和空间分布.受电荷分离场的影响以及超热电子逃逸数的限制,超热电子产生的环形磁场主要分布于等离子体表面附近的焦斑半径内,仅当超热电子束流很强时(在1μm半径截面内达到10³A量级),环形磁场才可以达到10²T量级.一般情况下,由超热电子产生的磁场极小. 关键词： 磁场 超热电子     

电子辐照聚合物带电特性多参数共同作用的数值模拟

电子辐照聚合物样品的带电特性是扫描电子显微镜成像、电子束探针微分析以及空间器件辐照效应等领域的一个重要研究课题. 通过建立基于蒙特卡罗方法的电子散射和时域有限差分法的电子输运的数值模型, 并采用高效的多线程并行计算, 模拟了电子非透射辐照聚合物样品的带电特性, 得到了带电稳态下的样品底部泄漏电流密度、表面负电位以及样品总电荷密度等带电特征量受入射电子能量、入射电流密度、样品材料的电子迁移率、样品厚度等相关参数共同作用的影响. 结果表明, 一个参数的变化使表面负电位增强时, 其他参数对负电位的影响将增强. 样品的带电稳态特征量在同一个电流平衡的模式下受参数影响的变化是单调的. 当电流平衡模式发生变化时, 如在入射电子能量较低的条件下, 样品内部的总电荷量会随着样品厚度的增大而先增加后减小, 出现局部极大值. 样品底部的泄漏电流密度随着入射电流密度的增大而近线性成比例地增大. 研究结果对于揭示电子辐照聚合物的带电规律及微观机理、预测不同条件下的样品带电状态具有重要科学意义.     

电子辐照下聚合物介质深层充电现象研究

空间辐射环境中,聚合物介质的深层充放电效应是威胁航天器安全的重要因素之一.文中在Chudleigh和von Berlepsch所发展的电位衰减模型基础上引入传输电流项,考虑了电子入射引起的感应电导率和感应电场的影响,提出了新的分析研究介质材料深层充电规律和特征的模型.通过该模型,分析了不同辐射条件下介质的表面电位、内部电荷与电场分布的变化,并设计实验及援引其他实验数据对模型分析结果进行验证.分析和实验结果表明,聚合物介质在深层充电过程中的平衡电位随着入射电子束流强度和介质电阻率的增加而增大,决定深层充电平 关键词： 深层充电 电荷传输模型 电子束 聚合物     

Ultrafast relaxation of electrons and selfconsistent electrical charging in insulators

Low energy electron scattering in insulators is described by a Monte Carlo program based on acoustic and optical phonon scattering as well as on impact ionization of valence band electrons, especially aimed to the scattering of ballistic and drifting electrons in wide gap dielectrics. There is a rapid relaxation of excited electrons within the conduction band of wide gap insulators like SiO₂ and Al₂O₃ over femtoseconds. The field-dependent transport and trapping parameters allow us to model the selfconsistent charge transport and charging-up of insulating samples during electron irradiation. The resulting spatial and time-dependent distributions of all currents j(x,t), charges ρ(x,t), the electric field F(x,t) and the potential V(x,t) are obtained and compared with experimental measurements.     

高能电子辐射下聚四氟乙烯深层充电特性

介质深层充放电现象是诱发航天器异常故障的重要因素之一.分析了高能电子辐射下介质内部电荷沉积、能量沉积特性和电导特性,考虑了真空与介质界面电荷对电场分布的影响,建立了介质二维深层充电的物理模型,并基于有限元方法实现了数值计算.计算了高能电子辐射下聚四氟乙烯的深层充电特性.结果表明:真空环境下,介质的表面存在较弱的反向电场,随着介质深度增大,电场减小至零,随后逐渐增大,最大值出现在靠近接地附近,但在接地点,电场存在小幅降低.分析了不同辐射时间下(1 h,1 d,10 d和30 d),介质内部最大电位和最大电场的时空演变特性.随着辐射时间的增加,最大电位由-128V增加至-7.9×104V,最大电场由2.83×105V·m-1增加至1.76×108V·m-1.讨论了入射电子束流密度对最大电场的影响,典型空间电子环境(1×10-10A·m-2)下,电子辐照10 d时,介质内部最大电场为2.95×106V·m-1.而恶劣空间电子环境(2×10-8A·m-2)下,电子辐射42 h,介质内部最大电场即达到108V·m-1,超过材料击穿阈值(约为108V·m-1),极易发生放电现象.该物理模型和数值方法可以作为航天器复杂部件多维电场仿真的研究基础.     

The influence of dielectric surface charge distribution upon thepartial discharge behavior in short air gaps

A two-dimensional breakdown model based upon the continuity equations for electrons and ions and the Poisson equation is employed to examine the influence of surface charges upon the partial discharge behavior of a short metallic-dielectric plane-parallel electrode gap of 0.05 cm in an air-like mixture at atmospheric pressure. The form of charge distribution at the dielectric electrode surface is found to significantly affect a number of important discharge parameters, such as the uniformity of the electric field, the charge density and its radial distribution within the gap, as well as the discharge propagation time     

高能电子辐照绝缘厚样品的表面电位动态特性

采用数值计算和实验测量相结合的方法, 阐明了高能电子束照射下绝缘厚样品的表面电位和电子产额动态特性. 结果表明: 由于电子在样品内部的散射和输运, 沿着深度方向, 空间电位先缓慢下降到最小值, 然后逐渐升高并趋近于零; 随着电子束照射, 样品的表面电位逐渐下降, 可至负千伏量级, 电子总产额逐渐增大至一个接近于1的稳定值; 电子束停止照射后, 长时间放置下, 表面电位将逐渐升高, 但带电并不会消除; 表面电位随电子束能量的升高近似线性下降, 随入射角的增大而升高, 而随样品厚度的增大仅略有下降.     

Self-consistent charging in dielectric films under defocused electron beam irradiation

We clarify the transient and equilibrium charging characteristics of grounded dielectrics due to low-energy defocused electron beam irradiation by a three-dimensional self-consistent simulation model. The model incorporates the electron scattering, transport and trapping. Results show that some electrons can arrive at the grounded substrate due to the internal field and density gradient, forming the leakage current. The transient charging process tends to equilibrium as the surface potential decreases and the leakage electron current increases. The positive and negative space charges are distributed alternately along the beam incident direction. In the equilibrium state, the surface potential and leakage electron current decrease to stable values with increasing film thickness and the trap density, but with decreasing electron mobility. Moreover, the surface potential of the dielectric thin film exhibits a maximum negative value with variation of the beam energy; for example, under the condition of the film thicknesses 0.5 μm and 2 μm, the maximum negative values of surface potentials are -13 V and -98 V in beam energies 2 keV and 3.5 keV, respectively. However, for the thick film, the surface potential decreases with the increase in beam energy.     

A Debye model for point defects in aluminosilicate crystals

Summary In aluminosilicate lattices, exchanges between silicon and aluminum ions are expected to originate charged point defects of opposite signs. Thermodynamic arguments, based on a model analogous to the Debye electrolyte model, allow evaluation of the equilibrium density of defects as a function of temperature. The electric field of point defects is found to be screened by charge distribution even at distances small enough to affect the ground-state energy of electrons trapped by the defect positive charges. Calculations show that large fluctuations of trapped electron energy are expected. These results agree with data from thermoluminescence experiments on different aluminosilicates, which showed broad distributions of electron traps.     

Analysis of microscopic parameters of surface charging in polymer caused by defocused electron beam irradiation

The relationship between microscopic parameters and polymer charging caused by defocused electron beam irradiation is investigated using a dynamic scattering-transport model. The dynamic charging process of an irradiated polymer using a defocused 30 keV electron beam is conducted. In this study, the space charge distribution with a 30 keV non-penetrating e-beam is negative and supported by some existing experimental data. The internal potential is negative, but relatively high near the surface, and it decreases to a maximum negative value at z = 6 μm and finally tend to 0 at the bottom of film. The leakage current and the surface potential behave similarly, and the secondary electron and leakage currents follow the charging equilibrium condition. The surface potential decreases with increasing beam current density, trap concentration, capture cross section, film thickness and electron–hole recombination rate, but with decreasing electron mobility and electron energy. The total charge density increases with increasing beam current density, trap concentration, capture cross section, film thickness and electron–hole recombination rate, but with decreasing electron mobility and electron energy. This study shows a comprehensive analysis of microscopic factors of surface charging characteristics in an electron-based surface microscopy and analysis.     

宏观电偶极子对聚丙烯铁电驻极体膜电荷储存及其动态特性的影响

利用栅控恒压电晕充电组合反极性电晕补偿充电法，研究了孔洞(单元电畴)内分布的空间电荷型宏观电偶极子的形成，及其增长对聚丙烯孔洞膜电极化期间的电流特性及电导率的影响. 借助等温表面电位衰减测量、开路和短路热刺激放电电流谱分析等，讨论了宏观电偶极子及其密度变化时的聚丙烯孔洞驻极体膜电荷储存稳定性及电荷动态特性. 实验结果说明：由电极化形成的宏观电偶极子的自身电场提高了聚丙烯孔洞驻极体膜的电导率，从而降低了驻极体膜电荷储存的稳定性. 对呈现弱极化强度的孔洞驻极体膜，以孔洞为畴结构基本单元内的宏观电偶极子，其两性空间电荷的大部分仅仅分别沉积在透镜状孔洞上下两壁的两端. 外激发脱阱电荷从脱阱位置的输运路径，主要是绕孔洞两边沿介质层迁移；而极化强度较高的样品，其两性电荷则分别分布在上下两壁的宽广区域内，脱阱电荷的大部分在驻极体电场驱动下从脱阱位置通过孔洞层间的介质层迁移并衰减.     

DC column plasma kinetics in a longitudinal magnetic field

The cylindrical column plasma of a neon dc glow discharge under the influence of a weak longitudinal magnetic field is studied. An extended, fully self-consistent model of the column plasma has been used to determine the kinetic quantities of electrons, ions and excited atoms, the radial space charge field, and the axial electric field for given discharge conditions. The model includes a nonlocal kinetic treatment of the electrons by solving their spatially inhomogeneous kinetic equation, taking into account the radial space charge field and the axial magnetic field. The treatment is based on the two-term expansion of the velocity distribution and comprises the determination of its isotropic and anisotropic components in the axial, radial, and azimuthal direction. A transition from a distinctly nonlocal kinetic behavior of the electrons in the magnetic-field-free case to an almost local kinetic behavior has been found by increasing the magnetic field. The establishment of the electron cyclotron motion around the column axis increasingly restricts the radial electron energy transport and reduces the radial ambipolar current. The complex interaction of these transport phenomena with the alterations in the charge carrier production leads finally to a specific variation of the electric field components. The axial field increases by applying weak magnetic fields, however, decreases with increasingly higher magnetic fields. At higher magnetic fields, the radial space-charge field is considerably reduced