Simulation of the real efficiencies of high-efficiency silicon solar cells

The temperature dependences of the efficiency η of high-efficiency solar cells based on silicon are calculated. It is shown that the temperature coefficient of decreasing η with increasing temperature decreases as the surface recombination rate decreases. The photoconversion efficiency of high-efficiency silicon-based solar cells operating under natural (field) conditions is simulated. Their operating temperature is determined self-consistently by simultaneously solving the photocurrent, photovoltage, and energy-balance equations. Radiative and convective cooling mechanisms are taken into account. It is shown that the operating temperature of solar cells is higher than the ambient temperature even at very high convection coefficients (~300 W/m² K). Accordingly, the photoconversion efficiency in this case is lower than when the temperature of the solar cells is equal to the ambient temperature. The calculated dependences for the open-circuit voltage and the photoconversion efficiency of high-quality silicon solar cells under concentrated illumination are discussed taking into account the actual temperature of the solar cells.     

多孔硅的孔隙对硫化锌/多孔硅光电性质的影响

为了研究衬底多孔硅(PS)的孔隙对硫化锌/多孔硅(ZnS/PS)复合体系的光学性能和电学性质的影响,采用脉冲激光沉积方法在不同孔隙度的PS衬底上沉积了硫化锌薄膜。利用X射线衍射仪、扫描电子显微镜、荧光分光光度计和Ⅰ-Ⅴ特性曲线分别研究了PS衬底上ZnS薄膜的晶体结构、表面形貌和ZnS/PS复合体系的光学和电学性质。结果表明,沉积的ZnS薄膜呈立方相晶体结构,沿β-ZnS(111)晶向择优取向生长。随着衬底PS孔隙的增多,ZnS薄膜衍射峰的强度减小,且薄膜表面出现一些空洞和裂缝;在ZnS/PS复合体系的光致发光谱中,PS的发光相对于未沉积ZnS薄膜的PS有所蓝移,随着PS孔隙的增多,该蓝移量增大,而且在光谱中间550nm左右出现了一个新的绿光发射,归因于ZnS的缺陷中心发光。ZnS的蓝、绿光与PS的红光相叠加,整个ZnS/PS复合体系呈现出较强的白光发射。ZnS/PS异质结的Ⅰ-Ⅴ特性曲线呈现出与普通二极管相似的整流特性,在正向偏置下,电流密度较大,电压降较低;在反向偏置下,电流密度接近于0。随着衬底PS孔隙的增多,正向电流增大。该项研究结果为固态白光发射器件的实现奠定了基础。     

工业级纳米绒面多晶硅太阳电池的发射极扩散方阻调控其光电转换性能研究

本文制备了工业级纳米绒面多晶硅太阳电池,研究 了发射极扩散方阻对其光电转换 性能的影响。结果表明:提高发射极扩散方阻能够有效地提升电池的开路电压、短路电流, 但填充因子相对降低。通过分析关键光电参数,其原因归结为:提高发射极扩散方阻有利于 降低发射极及其表面载流子复合,但过高的发射极扩散方阻将导致发射极与金属栅线接触不 良。采用优化的发射极扩散方阻,纳米绒面相对于微米绒面多晶硅太阳电池具有改善的光电 转换性能,产线均值光电转换效率达到了19.20%。基于上述研究结果 ,讨论了进一步通过调控发射极扩散方阻来优化纳米绒面多晶硅太阳电池的方法。     

A life cycle assessment of perovskite/silicon tandem solar cells

Given the rapid progress in perovskite solar cells in recent years, perovskite/silicon (Si) tandem structure has been proposed to be a potentially cost‐effective improvement on Si solar cells because of its higher efficiency at a minimal additional cost. As part of the evaluation, it is important to conduct a life cycle assessment on such technology in order to guide research efforts towards cell designs with minimum environmental impacts. Here, we carry out a life cycle assessment to assess global warming, human toxicity, freshwater eutrophication and ecotoxicity and abiotic depletion potential impacts and energy payback time associated with three perovskite/Si tandem cell structures using silver (Ag), gold (Au) and aluminium (Al) as top electrodes compared with p–n junction and hetero‐junction with intrinsic inverted layer Si solar cells. It was found that the replacement of the metal electrode with indium tin oxide/metal grid in the tandem cell reduces the environmental impacts significantly compared with the perovskite cell. For all the impacts assessed, we conclude that the perovskite/Si tandem using Al as top electrode has better environmental outcomes, including energy payback time, when compared with the other tandem structures studied. Use of Al in preference to noble metals for contacts, Si p–n junction in preference to intrinsic inverted layer and the avoidance of 2,20,7,70‐tetrakis(N ,N‐di‐p‐methoxyphenylamine)9,90‐spirobifluorene (Spiro‐OMeTAD) are environmentally beneficial. The key result found of this work is that the most important factor for the better environmental impacts of these tandem solar cells is the transparency and electrical conductivity of the perovskite layer after it fails. Copyright © 2017 John Wiley & Sons, Ltd.     

Temperature influence on performance degradation of hydrogenated amorphous silicon solar cells irradiated with protons

This paper reports temperature influence on radiation degradation of hydrogenated amorphous silicon (a‐Si : H) solar cells. Degradation behaviors of a‐Si : H solar cells irradiated with protons at 331 K are compared with that at 298 K (room temperature). Variations with time in the post‐irradiation electrical properties are also investigated. It is found that the radiation degradation of the electrical properties at 331 K is significantly smaller than that at room temperature. Also, all the electrical properties (short‐circuit current, open‐circuit voltage, output maximum, and fill factor) recover with time after irradiation even at room temperature. The characteristic time of thermal annealing of short‐circuit current is larger as the temperature is higher. These results indicate that temperature during irradiation and elapsed time from irradiation to measurement is an important parameter for radiation degradation of a‐Si : H solar cells. Therefore, these parameters should be controlled in conducting the ground radiation tests. Copyright © 2012 John Wiley & Sons, Ltd.     

Assessing the optoelectronic behavior of soiled silicon photovoltaic cell under harsh environmental conditions

In the current study, a monocrystalline Si photovoltaic(PV) cell was modeled using solar cell capacitance simulator(SCAPS) to demonstrate the optoelectronic performance of the cell under harsh environmental conditions. Harsh conditions are simulated in terms of wind speed and temperature fluctuations within the presence of a dust layer. All models are evaluated with respect to a bare model with no dust layer accumulated and operating under standard test conditions(STC). Accordingly, the PV under...     

Characterisation of nonlinearity performance for coherent optical OFDM signals under influence of PMD

The first experiment of polarisation-mode dispersion (PMD) impact on fibre nonlinearity in coherent optical OFDM (CO-OFDM) systems is reported. The optimal Q value at 10.7 Gbit/s has been improved by 1 dB after introduction of differential group delay (DGD) of 900 ps.     

本征层厚度对非晶硅叠层电池电流匹配的影响

采用PECVD技术制备a-Si:H/a-Si:H叠层双结非晶硅电池,研究了本征层厚度对叠层电池功率及短路电流的影响。通过调节顶电池和底电池本征层的沉积时间,得到不同厚度比例的本征层(di1:di2),经过实验对比发现I层总体厚度为650 nm,di1:di2=1:5时得到的电池组件短路电流(Isc)和最大功率(Pmax)都是最大值。此时叠层电池的电流得到了较好的匹配,实现了工艺参数的优化。     

Dependence of the optoelectronic properties of selenium-hyperdoped silicon on the annealing temperature

Selenium-hyperdoped silicon was prepared by ion implantation at 100 eV to a dose of 6×10¹⁵ Se/cm², followed by furnace annealing at 500–900 °C for 30 min. A phase transition from amorphous to crystalline was observed for the sample annealed at 600 °C. Carrier density in the Se doping layer gradually increases with the annealing temperature and a high carrier/donor ratio of 7.5% was obtained at 900 °C. The effects of annealing temperature on the rectifying behavior and external quantum efficiency of n⁺p junctions formed on Se-hyperdoped silicon were also investigated. We found that 700 °C was the optimal annealing temperature for improving the crystallinity, below-bandgap absorption, junction rectification and external quantum efficiency of Se-doped samples.     

Optical control of 14 GHz MMIC oscillators based on InAlAs/InGaAsHBTs with monolithically integrated optical waveguides

An In_0.52Al_0.48As/In_0.53Ga_0.47 As heterojunction bipolar transistor (HBT) with a novel integrated optical waveguide for light input has been developed. Detailed modeling is used to validate the design and simulate the coupling of light from the waveguide into the device. Fabricated waveguide-HBT devices exhibited cutoff frequencies of f_T=32 GHz and f_max=48 GHz with 56% of the guided light being converted to photocurrent. Fabricated MMIC oscillators operating at 13.9 GHz exhibited direct optical controllability in the form of optical tuning and injection locking. This is the highest reported frequency for direct optical injection locking in an HBT-based oscillator     

Influence of bandgap narrowing on the performance of silicon n-p solar cells

This paper deals with the incorporation of bandgap narrowing in the modelling of n⁺-p solar cells. First, the physcial model on which the computations are based, is explained. Second, the technology used to fabricate the solar cells, and the measurement technique for the minority carrier lifetime are commented. Then a detailed comparison between measured and computed results of I_sc, V_oc and P_max follows and the importance of inclusion I72 of the bandgap narrowing is illustrated. The theoretical case where Auger—recombination is the only recombination process is also treated. Finally computed results obtained for solar cells with different surface concentrations are shown.     

高效太阳电池硅衬底特性对原子层沉积Al2O3薄膜钝化性能的影响

Atom layer deposition （ALD）-Al2O3 thin films are considered effective passivation layers for p-type silicon surfaces. A lower surface recombination rate was obtained through optimizing the deposition parameters. The effects of some of the basic substrate characteristics including material type, bulk resistivity and surface morphology on the passivation performance of ALD-Al2O3 are evaluated in this paper. Surface recombination velocities of 7.8 cm/s and 6.5 cm/s were obtained for p-type and n-type wafers without emitters, respectively. Substrates with bulk resistivity ranging from 1.5 to 4 Ω · cm were all great for such passivation films, and a higher implied Voc of 660 mV on the 3 Ω · cm substrate was achieved. A minority carrier lifetime （MCL） of nearly 10 μs higher was obtained for cells with a polished back surface compared to those with a textured surface, which indicates the necessity of the polishing process for high-efficiency solar cells. For n-type semi-finished solar cells, a lower effective front surface recombination velocity of 31.8 cm/s was acquired, implying the great potential of （ALD）-Al2O3 thin films for high-efficiency n-type solar cells.     

LDPC码在相干光通信下的性能分析与研究

对于相干光通信系统,相位噪声成为影响系统性能的重要因素之一,并严重影响LDPC码(低密度奇偶校验码)软译码的性能。仿真结果表明,在16QAM调制方式下,500kHz线宽的激光器相位噪声将导致1.5dB的性能损失。为了降低相位噪声的影响,提出了一种基于相位噪声估计值修正LLR(对数似然比信息)的方法。经仿真验证,该LLR修正方法能够挽回0.5dB的译码性能损失。     

Unified model of fundamental limitations on the performance of silicon solar cells

Previous attempts to explain the substantial discrepancy between observed and predicted efficiencies in silicon solar cells are shown to have treated inadequately two important features of typical devices: 1) In the diffused region the electric-field distribution is much wider than generally believed and the field values away from the junction are generally higher; 2) Auger processes in heavily doped regions have a more pervasive impact than has been recognized. By incorporating a suitable modification of the junction model and a consistent treatment of Auger effects into the analysis, a unified model is developed for the principal limitations on the performance of Si solar cells. This model accounts for limits to Iscand Vocarising in either the front or base region. The present analysis reinterprets the "violet-cell" observations of the effect of the diffusion profile and presents an alternative to the bandgap-narrowing model of the heavy-doping effect on Voc. A new method is developed for evaluating the junction saturation current in heavily doped regions of such solar cells and transistor emitters.     

利用球型微纳米颗粒结构表面减小硅基太阳能电池的光反射

为了在理想的光频范围内扩展硅太阳能电池的低反射特性,设计了一种由球型微纳米颗粒周期排列构成的光学微结构。利用球型微纳米颗粒结构表面良好的抗反射特性,扩展硅基太阳能电池的超低反射特性。首先采用Mie散射理论研究了单个球型硅颗粒的散射特性;进而使用MEEP仿真软件通过控制变量法分析了多个颗粒构成的周期性二维光学微结构的光反射特性,分析了球型微纳米颗粒的周期数、半径、间距对反射率的影响。结果表明:合理选择球形颗粒的半径、间距以及周期数构成合适的周期性二维光学微结构,可以在理想的光频范围内获得超低反射特性。     

Rayleigh scattering influence on performance of 10 Gb/s opticalreceiver with Er-doped optical fiber preamplifier

The achievement of -30.8 dBm (630 photon/bit) receiver sensitivity at 10 Gb/s, with an Er³⁺-doped optical fiber preamplifier, is discussed. This is an 8.3-dB sensitivity improvement over the avalanche-photodiode/FET receiver. Power penalties caused by a noise increase due to Rayleigh backscattering by the transmission optical fiber have been evaluated. Approximately -30-dB Rayleigh scattering from a 20-km optical fiber resulted in a 3.5-dB power penalty for a 25-dB-gain optical amplifier     

Influence of perimeter recombination on high-efficiency GaAs p/nheteroface solar cells

Perimeter recombination currents have been characterized for 0.5-cm-square and 2-cm-square p/n GaAs solar cells. Measurements show that perimeter recombination dominates the n=2 dark current component of these high-efficiency solar cells. The results also suggest that perimeter recombination will be substantial even in much-larger-area solar cells. Although little influence on open-circuit voltage is expected, perimeter recombination may adversely affect the cell's one-sun fill factor. Because of its importance to one-sun applications, recombination at the junction perimeter must be suppressed before GaAs solar cells approach their limiting conversion efficiencies     

种子层对微晶硅锗太阳电池的影响

Using plasma enhanced chemical vapor deposition（PECVD） at 13.56 MHz,a seed layer is fabricated at the initial growth stage of the hydrogenated microcrystalline silicon germanium(μc-Si_1-xGe_x:H) i-layer.The effects of seeding processes on the growth ofμc-Si_1-xGe_x:H i-layers and the performance ofμc-Si_1-xGe_x:H p-i-n single junction solar cells are investigated.By applying this seeding method,theμc-Si_1-xGe_x:H solar cell shows a significant improvement in short circuit current density(J_sc) and fill factor（FF） with an acceptable performance of blue response as aμc-Si:H solar cell even when the Ge content x increases up to 0.3.Finally,an improved efficiency of 7.05%is achieved for theμc-Si_0.7Ge_0.3:H solar cell.     

大面积、高性能柔性 GaInP/GaAs/InGaAs叠层太阳电池的制备

柔性高效Ⅲ-Ⅴ族多结太阳电池正在被开发、应用于无人机、可穿戴设备和空间能源等领域.采用MOCVD技术在Ga As衬底上制备太阳电池外延层, 之后通过低温键合和外延层剥离方法将外延层转移到柔性衬底上.通过外延层剥离设备设计和大量参数优化实验, 实现了GaAs太阳电池结构从四英寸砷化镓晶圆上的有效分离, 且不产生缺陷并保持原有的性能.近期, 在50μm聚酰亚胺薄膜上制备的30 cm2大面积柔性GaInP/Ga As/InGaAs三结太阳电池实现了31. 5%的转换效率 (AM0光谱) , 其中开路电压3. 01 V, 短路电流密度16. 8 mA/cm2, 填充因子0. 845.由于采用了轻质的聚酰亚胺材料, 所得到的柔性太阳电池面密度仅为168. 5 g/m2, 比功率高达2 530 W/kg.