共查询到20条相似文献，搜索用时 44 毫秒
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文内报告了金刚石薄膜/立方氮化硼异质结的制备过程,然后采用自制的 测试装置对其伏-安特性进行了测试。 相似文献
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银锌锡硒(Ag2ZnSnSe4)是一种禁带宽度为1.4 eV的n型半导体材料.本文提出一种由n型Ag2ZnSnSe4与石墨烯(Graphene)组成的Graphene/Ag2ZnSnSe4诱导p-n结薄膜太阳电池,并借助wxAMPS软件对电池的物理机理和性能影响因素进行模拟研究.模拟结果表明,高功函数的石墨烯与n型Ag2ZnSnSe4半导体接触时,Ag2ZnSnSe4吸收层的前端能带向上弯曲,在n型Ag2ZnSnSe4吸收层表面诱导形成p型Ag2ZnSnSe4反型层,p型Ag2ZnSnSe4和n型Ag2ZnSnSe4组成p-n同质结.模拟发现石墨烯和背接触的功函数会影响载流子的分离、输运和收集,严重影响器件性能,石墨烯功函数达到5.5 eV,背接触功函数不高于4.4 eV,都有利于提高器件性能.Ag2ZnSnSe4吸收层的掺杂浓度主要影响器件的短路电流,而Ag2ZnSnSe4吸收层的体内缺陷对器件整体性能产生影响.在石墨烯和背接触功函数分别为5.5和3.8 eV,Ag2ZnSnSe4吸收层的掺杂浓度和缺陷密度分别为1016和1014 cm–3时,Graphene/Ag2ZnSnSe4诱导p-n结薄膜太阳电池能够取得高达23.42%的效率.这些模拟结果为设计新型高效低成本太阳电池提供了思路和物理阐释. 相似文献
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郭紫曼;汪洋;刘洋;张腾;陈剑;卢寅梅;何云斌 《发光学报》2025,46(3):373-382
针对纯Zn O半导体的p型掺杂难题,提出采用阴(S2-)阳(Mg2+)离子复合取代、协同调控Zn O合金电子能带结构基础上,进行N受主掺杂的新思路,并采用脉冲激光沉积法成功制备了N掺杂p型透明导电Mg Zn OS薄膜。通过X射线衍射、透射光谱、霍尔效应、X射线光电子能谱和二次离子质谱测试分析了薄膜的晶体结构、光电学性质及化学组分。实验结果表明,制备的Mg Zn OS∶N薄膜为六角纤锌矿结构,呈现c轴择优取向生长。薄膜在紫外-可见-近红外波段的透射率超过80%,且Mg掺杂可明显拓宽Zn O合金薄膜的光学带隙。所制备p型导电薄膜中的Mg和S含量分别为9%和25%,空穴浓度为2.02×1019 cm-3,霍尔迁移率为0.25 cm2/（V·s）,电阻率为1.24Ω·cm。在成功制备p型Mg Zn OS∶N薄膜的基础上,设计并制备了新型p-Mg Zn OS∶N/n-Zn O准同质p-n结型紫外光电探测器。器件呈现典型的二极管整流特性（开启电压约为1.21 V）,且在0 V偏压下表现出稳定的自驱动紫外光响应,峰值响应度2.26 m A/W（波长为350 nm）。经分析,认为上述自驱动光响应来源于p-n结内建电场对光生载流子的有效分离和传输。本研究可为Zn O的p型掺杂研究提供有价值的参考,对开发高性能全Zn O基光电子器件具有重要意义。 相似文献
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二维晶体的特殊结构和新奇物理性能为构建新型纳米结构和器件,实现半导体领域的突破性进展提供了可能.本文首先介绍了双极性二维晶体的基本物理性能和相关范德瓦耳斯异质结的制备方法.在此基础上,主要综述了双极性二维晶体在新型电场调制二维晶体p-n结与异质p-n结以及非易失性可存储二维晶体p-n结等方面的应用、相关结构设计、电子和光电子等物理性能.然后进一步介绍了该类新型p-n结在逻辑整流电路、场效应光电子晶体管、多模式非易失性存储器、整流存储器、光电子存储器、光伏器件等方面的潜在应用.最后总结展望了该种新型p-n结在相关领域的可能发展方向. 相似文献
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《中国物理 B》2021,30(9):96803-096803
Hill-like polycrystalline diamond grains(HPDGs) randomly emerged on a heavy boron-doped p~+ single-crystal diamond(SCD) film by prolonging the growth duration of the chemical vapor deposition process.The Raman spectral results confirm that a relatively higher boron concentration(～1.1 × 10~(21) cm~(-3)) is detected on the HPDG with respect to the SCD region(～5.4 × 10~(20) cm~(-3)).It demonstrates that the Au/SCD interface can be modulated from ohmic to Schottky contact by varying the surface from hydrogen to oxygen termination.The current-voltage curve between two HPDGs is nearly linear with either oxygen or hydrogen termination,which means that the HPDGs provide a leakage path to form an ohmic contact.There are obvious rectification characteristics between oxygen-terminated HPDGs and SCD based on the difference in boron doping levels in those regions.The results reveal that the highly boron-doped HPDGs grown in SCD can be adopted as ohmic electrodes for Hall measurement and electronic devices. 相似文献
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MgB_2材料具备临界转变温度较高、相干长度大、临界电流和临界磁场高等优点,被认为有替代Nb基超导材料的潜力.研究了不同温度下以化学气相沉积法制备的硼(B)薄膜的微观结构.实验结果表明:较低温度沉积的B先驱薄膜为无定形B膜,可以与Mg蒸气反应生成MgB_2超导薄膜;当沉积温度高于550?C时,所得硼薄膜为晶型薄膜;以晶型硼薄膜为先驱膜在镁蒸气中退火,不能生成硼化镁超导薄膜.利用晶型B膜的这一特点,成功制备了以晶型硼薄膜为介质层的硼化镁超导约瑟夫森结. 相似文献
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The paper is dedicated to development of scintillators based on the single crystalline films of Ce3+ doped Lu2SiO5 (LSO:Ce) and Y2SiO5 (YSO:Ce) orthosilicates grown by Liquid Phase Epitaxy method onto YSO substrates from melt-solutions based on the PbO–B2O3 flux. We also compare the luminescent and scintillation properties of Ce doped LSO:Ce and YSO:Ce single crystalline films with those of their single crystal counterparts, grown by the Czochralski method. 相似文献
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在4.5~5.0 GPa,1 500~1 800 ℃范围内,在Li基复合氮硼化物的催化体系中添加Li8SiN4后,得到了具有光泽的棕色透明的cBN单晶。研究了cBN晶体的形貌,结果表明,添加Li8SiN4后得到的等积形cBN晶体的百分比明显增多,除部分截角四面体外,多为截角八面体晶体,且棱角尖锐,晶面致密光滑。 相似文献
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《Current Applied Physics》2015,15(7):765-769
Although numerous studies have been previously reported for the formation of Ge p–n junctions, there is still a lack of research on Ge junctions formed by solid-phase diffusion doping, which typically uses the diffusion phenomenon of phosphorus (P) atoms from InGaP for the fabrication of a Ge n+/p subcell in a III–V multi-junction cell. Here, we investigate the characteristics of Ge n+/p junctions achieved by the InGaP-based diffusion technique at 450–650 °C with SIMS, ECV, and J–V analyses. In addition, through a multiple error function fitting method, diffusivity, peak position, and activation energy values are accurately estimated from raw In/Ga/P/Ge SIMS profiles. The extracted activation energy values for In/Ga/P atoms are much lower than previously reported, indicating that a faster diffusion phenomenon occurs during the simultaneous diffusion of In/Ga/P into Ge. A non-annealed InGaP-deposited junction shows Ohmic behavior with a high current density because of leakage currents by many interfacial point defects. After a 550 °C anneal, the current density is reduced by 3–4 orders of magnitude and a small on/off-current ratio is obtained. Compared to this 550 °C annealed junction, a current density increases ∼10 times in the 650 °C sample due to an increased n-type carrier concentration. 相似文献
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分别在n型半绝缘Si、弱n (n )以及强n (n+ )型Si片 (1 0 0 )面上用射频磁控反应溅射法和直流磁控反应溅射法制备了p型ZnO薄膜以及ZnO同质p n结。其中在生长p型ZnO时 ,反应室中通以过量的氧。对上述p型和n型ZnO薄膜进行了X射线衍射测量 ,在 34.1°附近得到了 0 .3°左右半峰全宽的ZnO(0 0 2 )衍射峰。ZnO薄膜的原子力显微镜图像上可见六角型的自组装结构。阴极射线荧光的测量显示了位于 390nm的紫外特征峰。用I V特性仪测量了上述ZnOp n结原型器件的I V电学输运曲线 ,其正向显示了约为 1 .1V的阈值 ,与日美科研人员用直流溅射和扩散法制备的ZnOp n结相似 ,但反向特性明显优于他们的 相似文献
