激光剥离技术实现GaN薄膜从蓝宝石衬底移至Cu衬底

在GaN薄膜表面电镀厚100μm的、均匀的金属铜作为转移衬底.采用激光剥离技术,在400mJ/cm2脉冲激光能量密度条件下,成功地将GaN薄膜从蓝宝石衬底转移至Cu衬底.激光剥离后Cu衬底上GaN薄膜的扫描电子显微镜(SEM)测试结果表明,电镀Cu衬底与GaN之间形成致密的结合,对GaN薄膜起到了很好的支撑作用.同时铜的延展性好,使得GaN薄膜内产生的应力得到有效释放,保持了剥离后GaN薄膜的完整性.激光剥离后GaN表面残留物的X射线光电子能谱(XPS)分析显示,激光辐照产生的金属Ga部分与空气中的氧结合形成Ga2O3,这是剥离后GaN表面后处理困难的原因,并给出了相应的解决方法.     

650nm反射10.6μm透射的薄膜干涉滤光片

针对波长为650nm和10.6μm的激光器,选用了ZnS和YbF<,3作为膜料,采用离子辅助沉积技术,在多光谱ZnS基底上制备了650nm反射10.6μm透射的薄膜干涉滤光片.通过对膜系设计和优化工艺参数的研究,解决了膜层牢固性,改善了薄膜的激光损伤阈值,并给出了综合测试结果和实测光谱曲线.     

二氧化钒薄膜对红外脉冲功率激光的智能防护分析

VO2是一种固态热致变色材料,它的晶态结构可以在半导体-金属-绝缘体之间可逆转变。介绍了VO2的相变特性,研究了氧化钒的相变机理。根据激光对光电探测器的损伤机理,研究了氧化钒薄膜对红外脉冲功率激光的智能防护。当CO2脉冲激光照射到HgCdTe红外探测器上时,其热传导深度为0.32~3.2μm,远小于其吸收深度100μm。依据此对VO2薄膜防护的HgCdTe红外探测器的温升进行了计算和分析。结果表明,当一束激光照射VO2薄膜防护的探测器时,VO2薄膜可以在激光对探测器造成损伤之前完成相变,从而可以保护探测器。VO2薄膜可以用于探测器针对强激光的智能防护。     

利用CO2激光预处理提高熔石英基片的损伤阈值

为了提高熔石英基片对351nm短波长激光的损伤阈值,采用光栅式扫描方式,利用CO2激光器输出10.6μm波长的激光,对氢氟酸蚀刻后的小口径熔石英基片表面进行功率周期递增的辐照扫描。结果表明,经过CO2激光预处理后的熔石英基片,表面微观形貌得到了有效改善;利用S:1的方法测量熔石英基片损伤阈值。结果发现,在中度激光抛光的程度下,其零概率损伤阈值提高了30%左右,且对透射波前没有造成不利影响,从而证明了CO2激光预处理提高熔石英基片抗激光损伤能力的有效性。     

高功率脉冲CO_2激光器9.3μm波长选支研究

为获得中心波长9.3μm激光的高功率输出,利用高功率脉冲CO2激光器进行选支实验研究。采用腔镜镀膜选支技术,通过控制对不同波长的透射率或反射率参数,在稳定腔和非稳腔中都得到了中心波长9.3μm激光的单谱线输出。在相同工作参数下,稳定腔中心波长9.3μm激光的能量为其原中心波长10.6μm激光的95%,非稳腔中心波长9.3μm激光的能量为其原中心波长10.6μm激光的93%,两种腔型中心波长9.3μm激光热敏纸光斑颜色与中心波长10.6μm激光的有明显不同。实验表明,采用腔镜镀膜选支技术在稳定腔和非稳腔中都能获得中心波长9.3μm激光的单谱线输出,且激光能量与原腔型输出中心波长10.6μm激光的基本相当。激光热敏纸光斑显示出在相同单脉冲能量作用下,中心波长9.3μm激光对物质的冲蚀作用高于中心波长10.6μm的激光。     

CO_2激光辐照对熔石英表面形貌与应力分布的影响

采用不同光斑直径的10.6μm CO2激光束对熔石英表面损伤进行辐照处理。实验发现,对于50μm以下的损伤点,单发激光脉冲辐照即可使得激光损伤阈值恢复到基底完好区域的水平,对于在50~300μm之间的损伤点,采用低功率较长时间辐照后逐渐增加功率修复的方式可以彻底消除材料内部更深的裂痕。对不同尺寸光斑辐照后的应力分布研究表明,激光束尺寸、激光功率和激光作用时间是影响材料体内应力分布的主要因素,相比较而言,激光尺寸对应力分布的影响更为明显。对前后表面损伤分析表明,当辐照区域置于入射面时,辐照带来的微小环状凸起会造成后表面环形调制损伤,是损伤的最薄弱环节,当辐照区域置于后表面时,烧蚀主要影响阈值的整体提升。     

红外激光传输用聚苯乙烯—银—玻璃基体空心波导研究

利用液相镀膜法研制成了性能较好的传输用聚苯乙烯－银－玻璃基体小直径空心波导,波导长度达到1m左右,波导直径为800－1200μm,对于CO2激光（10.6μm）的传输损耗低达1.73dB/m,损伤阈值高于11.2W(17.2W/mm^2)。实验结果表明,聚苯乙烯－银－玻璃基体小直径空心波导适用于医学等领域CO2激光传输的要求,并有望在其他红外波段的激光能量传输中得到应用。     

用于CO2激光传输的10.6μm波段空心布拉格光纤

空心布拉格光纤是具有一维光子晶体(1DPC)包层和空心芯区的新型光子带隙光纤。针对它在CO2激光传输中的应用,设计和制备了传输波段中心波长在10.6μm的空心布拉格光纤样品。利用傅里叶变换红外光谱仪(FTIR)可以观察到光纤样品在10.6μm具有明显的透射峰。使用CO2激光,通过截断法测量得到光纤样品在10.6μm的传输损耗为2.35dB/m。测量了不同弯曲曲率下光纤样品的弯曲损耗,结果表明弯曲损耗系数随曲率的增大而线性增长。在接近光纤输出端处,弯曲半径为10cm的光纤90°弯曲引入的附加损耗约为2dB。实验结果论证了光纤样品的CO2激光低损耗传输特性,展现了空心布拉格光纤在提升CO2激光操作灵活性上的应用潜力。     

CO2激光辐射对水及水溶液物性的影响

研究10.6μm波长的CO2激光辐射对水及水溶液物性的影响.实验结果表明,红外激光辐射对蒸溜水及电解质水溶液的表面张力有一定诱变作用,并且使蒸馏水的电导率明显增大.     

10.6 μm脉冲激光对多晶硅探测器干扰损伤实验

用10.6 μm脉冲CO2激光辐照多晶硅光电探测器,进行了干扰与损伤阈值实验研究,得到了对多晶硅探测器的干扰、损伤阈值;分析了不同干扰能量的干扰效果,研究了干扰损伤机理,依据受干扰程度对干扰等级进行了划分;通过干扰激光能量与干扰光斑面积的关系,重度饱和后探测器随时间恢复情况,探讨了各干扰等级下10.6 μm脉冲激光对红外成像系统的干扰效果。     

CO2激光辐照下光学薄膜的温度场与热畸变

介绍了光学薄膜温度场的基本理论,利用交替隐型技术,对10.6μm激光辐照下介质薄膜的温度场分布进行了数值模拟和理论分析。在此基础上,利用夏克-哈特曼波前传感器对介质基底样品、不同厚度的介质单层膜样品以及不同膜系的YbF3/ZnSe介质多层膜样品在10.6μmCO2激光辐照下的热畸变进行了实验研究。研究结果表明,激光辐照下光学薄膜样品的温度场分布与辐照激光的光场分布、激光功率以及激光的辐照时间等因素有关。对于10.6μm激光而言,Ge最适宜做基底材料。     

激光辐照TiO2/SiO2薄膜损伤时间简捷测量

为了测量激光辐照薄膜的起始时间,采用了一种简洁易行的测量方法,利用波长1.06μm和1.315μm连续激光以及1.06μm单脉冲激光辐照典型薄膜光学元件,通过探测器接收激光脉冲信号和薄膜表面的激光反射信号,薄膜表面反射信号在激光辐照过程中的某个时刻发生突变,发生突变的时间对应着薄膜发生损伤的时间。得到1.06μm连续激光强度为7133W/cm2时,反射信号在0.8 s发生突变,强度为11776W/cm2时,反射信号在0.4 s发生变化;1.06μm单脉冲激光能量为48.725mJ,97.45m J,194.9m J时,薄膜损伤时间为3.63ns,2.727ns和1.09ns;1.315μm连续激光强度为2743W/cm2时,反射光信号在辐照时间t=3.44 s发生突变;强度为4128W/cm2时,薄膜表面反射光信号在辐照时间t=1.44s发生突变。结果表明,通过测量薄膜表面反射信号的突变来确定薄膜损伤的起始时间,对于薄膜抗激光加固,以及提高光电系统的抗激光能力有着重要的意义。     

Field electron emission from amorphous CNx:B films

CN_x:B thin films were prepared on titanium coated ceramic substrate by pulsed laser deposition technique (PLD). The microstructure of the film was examined using scanning electron microscopy (SEM), X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS) and Raman spectroscopy. The analyses indicate that the deposited samples are amorphous CN_x:B thin films. Field electron emission characteristics of amorphous CN_x:B thin films were measured in a vacuum chamber with a base pressure of about 3.2×10⁻⁵ Pa. The turn-on field of the film was 3.5 V/μm. The current density was 60 μA/cm² at an electric field of 9 V/μm. The experimental results indicate that this film could be a promising material applicable to cold cathodes.     

波长为2.94μm激光束对腔膜的损伤

本文对YAG:Er3+的2.94μm激光介质膜的损伤进行了研究,对不同基片和不同膜层材料进行实验,认为损伤的主要原因是2.94μm波段对水吸收太大(α吸=8000cm-1)造成的.改进办法采用Al2O3作基片,并加保护层.     

Pulsed laser deposition and processing of wide band gap semiconductors and related materials

The present work describes the novel, relatively simple, and efficient technique of pulsed laser deposition for rapid prototyping of thin films and multi-layer heterostructures of wide band gap semiconductors and related materials. In this method, a KrF pulsed excimer laser is used for ablation of polycrystalline, stoichiometric targets of wide band gap materials. Upon laser absorption by the target surface, a strong plasm a plume is produced which then condenses onto the substrate, kept at a suitable distance from the target surface. We have optimized the processing parameters such as laser fluence, substrate temperature, background gas pressure, target to substrate distance, and pulse repetition rate for the growth of high quality crstalline thin films and heterostructures. The films have been characterized by x-ray diffraction, Rutherford backscattering and ion channeling spectrometry, high resolution transmission electron microscopy, atomic force microscopy, ultraviolet (UV)-visible spectroscopy, cathodoluminescence, and electrical transport measurements. We show that high quality AlN and GaN thin films can be grown by pulsed laser deposition at relatively lower substrate temperatures (750–800°C) than those employed in metal organic chemical vapor deposition (MOCVD), (1000–1100°C), an alternative growth method. The pulsed laser deposited GaN films (∼0.5 μm thick), grown on AlN buffered sapphire (0001), shows an x-ray diffraction rocking curve full width at half maximum (FWHM) of 5–7 arc-min. The ion channeling minimum yield in the surface region for AlN and GaN is ∼3%, indicating a high degree of crystallinity. The optical band gap for AlN and GaN is found to be 6.2 and 3.4 eV, respectively. These epitaxial films are shiny, and the surface root mean square roughness is ∼5–15 nm. The electrical resistivity of the GaN films is in the range of 10⁻²–10² Θ-cm with a mobility in excess of 80 cm²V⁻¹s⁻¹ and a carrier concentration of 10¹⁷–10¹⁹ cm⁻³, depending upon the buffer layers and growth conditions. We have also demonstrated the application of the pulsed laser deposition technique for integration of technologically important materials with the III–V nitrides. The examples include pulsed laser deposition of ZnO/GaN heterostructures for UV-blue lasers and epitaxial growth of TiN on GaN and SiC for low resistance ohmic contact metallization. Employing the pulsed laser, we also demonstrate a dry etching process for GaN and AlN films.     

Enhancement of Real-Time THz Imaging System Based on 320 × 240 Uncooled Microbolometer Detector

A real-time terahertz (THz) imaging system was demonstrated based on a 320?×?240 uncooled microbolometer detector combined with a 2.52 THz far-infrared CO₂ laser. On the top of micro-bridge structure (35?×?35 μm²), a 10 nm nickel-chromium (NiCr) thin film was deposited to enhance THz absorption, which was fabricated by a combined process of magnetron sputtering and reactive ion etching (RIE). By mechanical simulation using design of experiment (DOE) method, the minimum deformation was optimized to 0.0385 μm, and a measured deformation of 0.097 μm was achieved in the fabrication. The fabricated micro-bridge pixel was used for THz detection, and a responsivity of 1235 V/W was achieved with a noise equivalent power (NEP) of 87.4 pW/Hz^1/2. THz imaging of metal gasket covered by label paper, paper clip in an envelope, and watermark of a banknote was demonstrated by a combination of histogram equalization (HE) and linear enhancement algorithm.     

Analysis of reactor geometry and diluent gas flow effects on the metalorganic vapor phase epitaxy of AIN and GaN thin films on α(6H)-SiC substrates

The influence of diluent gas on the metalorganic vapor phase epitaxy of AlN and GaN thin films has been investigated. A computational fluid dynamics model using the finite element method was employed to improve film uniformity and to analyze transport phenomena. The properties of AlN and GaN thin films grown on α(6H)-SiC(0001) substrates in H₂ and N₂ diluent gas environments were evaluated. Thin films of AlN grown in H₂ and N₂ had root mean square (rms) roughness values of 1.5 and 1.8 nm, respectively. The surface and defect microstructures of the GaN thin films, observed by scanning and transmission electron microscopy, respectively, were very similar for both diluents. Low temperature (12K) photoluminescence measurements of GaN films grown in N₂ had peak intensities and full widths at half maximum equal to or better than those films grown in H₂. A room temperature Hall mobility of 275 cm²/V·s was measured on 1 μm thick, Si-doped, n-type (1×10¹⁷ cm⁻³) GaN films grown in N₂. Acceptor-type behavior of Mg-doped GaN films deposited in N₂ was repeatably obtained without post-growth annealing, in contrast to similar films grown in H₂. The GaN growth rates were ∼30% higher when H₂ was used as the diluent. The measured differences in the growth rates of AlN and GaN films in H₂ and N₂ was attributed to the different transport properties of these mixtures, and agreed well with the computer model predictions. Nitrogen is shown to be a feasible alternative diluent to hydrogen for the growth of AlN and GaN thin films.     

GaN and AlGaN high-voltage rectifiers grown by metal-organic chemical-vapor deposition

In this paper, we report the study of the electrical characteristics of GaN and AlGaN vertical p-i-n junctions and Schottky rectifiers grown on both sapphire and SiC substrates by metal-organic chemical-vapor deposition. For GaN p-i-n rectifiers grown on SiC with a relatively thin “i” region of 2 μm, a breakdown voltage over 400 V, and forward voltage as low as 4.5 V at 100 A/cm² are exhibited for a 60-μm-diameter device. A GaN Schottky diode with a 2-μm-thick undoped layer exhibits a blocking voltage in excess of ∼230 V at a reverse-leakage current density below 1 mA/cm², and a forward-voltage drop of 3.5 V at a current density of 100 A/cm². It has been found that with the same device structure and process approach, the leakage current of a device grown on a SiC substrate is much lower than a device grown on a sapphire substrate. The use of Mg ion implantation for p-guard rings as planar-edge terminations in mesageometry GaN Schottky rectifiers has also been studied.     

Integration of GaN thin films with dissimilar substrate materials by Pd-In metal bonding and laser lift-off

Gallium nitride (GaN) thin films grown on sapphire substrates were successfully bonded and transferred onto GaAs, Si, and polymer “receptor” substrates using a low-temperature Pd-In bond followed by a laser lift-off (LLO) process to remove the sapphire growth substrate. The GaN/sapphire structures were joined to the receptor substrate by pressure bonding a Pd-In bilayer coated GaN surface onto a Pd coated receptor substrate at a temperature of 200°C. X-ray diffraction showed that the intermetallic compound PdIn₃ had formed during the bonding process. LLO, using a single 600 mJ/cm², 38 ns KrF (248 nm) excimer laser pulse directed through the transparent sapphire substrate, followed by a low-temperature heat treatment, completed the transfer of the GaN onto the “receptor” substrate. Cross-sectional scanning electron microscopy and x-ray rocking curves showed that the film quality did not degrade significantly during the bonding and LLO process.     

Design and optimization of high voltage LDMOS transistors on 0.18 μm SOI CMOS technology

In this paper, we have studied the effect of systematic downscaling of MOS channel length of the performance of the hybrid GaN MOS-HEMT with numerical simulations. The improvement in on-state conduction, together with concomitant short channel effects, including drain induced barrier lowering (DIBL) is quantitatively evaluated. A specific on-resistance of 2.1 mΩ cm² has been projected for a MOS channel length of 0.38 μm. We also have assessed the impact of high-k gate dielectrics, such as Al₂O₃. In addition, we have found that adding a thin GaN cap layer on top of AlGaN barrier can help reducing short channel effects.