共查询到18条相似文献,搜索用时 62 毫秒
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研究了《100》单晶硅在EPW腐蚀液中制作近似圆形硅膜,在EPW腐蚀液中因《100》单晶硅腐蚀速率各向异性,在圆形掩膜下很难实现圆形单晶硅膜.基于EPW腐蚀液中《100》单晶硅存在严重凸角削角,采用带锯齿(9个、20个、36个)结构的齿轮掩膜图形腐蚀制作近似圆形硅膜,通过采用SEM观察,随腐蚀时间增加,圆形掩膜EPW腐蚀后硅膜为近似方形,而带有36个锯齿结构的齿轮掩膜腐蚀后硅膜近似圆形.结果表明,利用掩膜锯齿结构在EPW腐蚀液中存在凸角削角现象,能够实现近似圆形硅膜的制作. 相似文献
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本文研究了在25%的四甲基氢氧化铵水溶液(TMAHW)中加入异丙醇(IPA)构成的腐蚀系统对硅的各向异性腐蚀特性.研究发现:在异丙醇含量从0%到80%体积比的广大范围内,溶液对硅均有显著的腐蚀作用,且表面质量比纯TMAHW的更好.实验给出了腐蚀速率、削角比和各向异性比R_(100)/R_(111)等参数与IPA含量的关系,结果表明:50%体积IPA与50%体积TMAHW构成的溶液存在腐蚀速率的极大值、削角的极小值和最大的各向异性比及R_(100)/R_(111).因之按此比例配制的新腐蚀液具有表面质量好,与MOS工艺相容以及低成本的优点. 相似文献
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硅在KOH 溶液和EPW 中
各向异性腐蚀的异同 总被引:1,自引:2,他引:1
本文在文献(1~5)的基础上,进一步应用碰撞理论研究了硅在KOH溶液和EPW中各向异性腐蚀的机理,并给出了硅在这两种腐蚀液中各向异性腐蚀速率的实验结果. 相似文献
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介绍一种硅纳米线制作方法.在SOI顶层硅上制作硅纳米梁,通过离子注入形成pnp结构,利用新发现的没有特殊光照时BOE溶液腐蚀pn结n型区域现象,结合BOE溶液氧化硅腐蚀,实现硅纳米线制作.制作完全采用传统MEMS工艺,具有工艺简单,成本低,可控,可靠性好,可批量制作等优点.利用该方法制作出了厚50 nm,宽100 nm的单晶硅纳米线,制作的纳米线可用于一维纳米结构电学性能研究、谐振器研究等. 相似文献
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We investigated the surface roughness properties of single-crystal silicon etched by a TMAH water solution. We used a hemispherical specimen, in which all crystallographic orientation planes appeared on the surface, and made a map of the surface roughness distribution pattern. The surface roughening and morphology strongly depends on crystallographic orientation. Different types of facet structures appeared at different orientations. The (1 0 0) orientation had the smoothest etched surface. We further studied roughening characteristics, such as dependence on the etching time and TMAH concentration, for the (1 0 0), (1 1 0), and (1 1 1) planes. The roughness values of these three planes depend on the etching time. The values for the (1 0 0) and (1 1 1) planes became saturated as the etching time increased at high TMAH concentration. The roughness of the (1 1 1) surface did not depend on the TMAH concentration. 相似文献
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硅谐振微传感器输出信号的信噪比很低,频率信号往往淹没在噪声之中.论文分析了随机共振系统的功率谱放大率和信噪比特性,提出了外差式随机共振频率检测方法,并将该方法应用于硅谐振微传感器输出信号的频率检测.理论分析和数值仿真结果表明,外差式随机共振能将更多的噪声能量转变为频率信号的能量,通过调节载波信号频率可从共振谱峰的变化中准确测定谐振频率.该方法是可行、有效的. 相似文献
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介绍了一种新颖的微创手术式硅微机械加工(MISSM)技术,该技术充分利用(111)硅片的晶向分布和各向异性湿法腐蚀的特性。通过在单晶硅片表面制作一系列微型释放窗口来定义结构的轮廓及尺寸,实现在单晶硅片内部选择性可自停止腐蚀技术,制作出不同结构尺寸的腔体。同时,结合不同器件结构设计的需求,缝合微型释放窗口并进行后续工艺制作及最终可动结构释放。该技术采用微创手术式单硅片单面体硅工艺替代传统的表面微机械工艺,制作工艺简单,既具有单硅片单面加工的优势又便于与IC工艺兼容。文章详细讲述了微创手术式三维微机械结构的成型机理和工艺流程,并针对其关键技术进行了系统的分析,取得了令人满意的结果。 相似文献
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《Sensors and actuators. A, Physical》2006,125(2):415-421
We investigated the anisotropic etching properties of single-crystal silicon using tetramethyl-ammonium-hydroxide (TMAH) water solutions containing poly-oxethylene-alkyl-phenyl-ether (NC-200) as a surfactant. When the surfactant was added at 0.1% of the total volume of the etchant, the etched surface morphologies drastically changed, along with the anisotropy of the etching rate. We found that by using the surfactant at the low TMAH concentration region, a smooth mirror-like surface can be etched in both (1 0 0) and (1 1 0) orientations simultaneously. Although the addition of the surfactant reduces the etching rate, we show how this procedure can be used to improve the roughness of an etched surface without significantly increasing the overall processing time. 相似文献
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A DRIE assisted wet anisotropic bulk micromachining (DAWN) process is demonstrated to fabricate various three-dimensional MEMS devices on a silicon-on-insulator (SOI) wafer. This SOI DAWN process can realize thin film structures, reinforced (thin film) structures, and thick structures with totally different mechanical characteristics. Various passive and active mechanical components, including flexible springs, rigid structures, and actuators, have been fabricated using the SOI DAWN process and have been further integrated to create MEMS devices which are flexible as well as movable in both in-plane and out-of-plane directions. This SOI DAWN process has been successfully applied to produce various multi-DOF devices made of single crystal silicon (SCS). 相似文献