Effects of AlN nucleation layer thickness on crystal quality of AlN grown by plasma-assisted molecular beam epitaxy

In this paper, the effects of thickness of AlN nucleation layer grown at high temperature on AlN epi-layer crystalline quality are investigated. Crack-free AlN samples with various nucleation thicknesses are grown on sapphire substrates by plasma-assisted molecular beam epitaxy. The AlN crystalline quality is analysed by transmission electron microscope and x-ray diffraction (XRD) rocking curves in both (002) and (102) planes. The surface profiles of nucleation layer with different thicknesses after in-situ annealing are also analysed by atomic force microscope. A critical nucleation thickness for realising high quality AlN films is found. When the nucleation thickness is above a certain value, the (102) XRD full width at half maximum (FWHM) of AlN bulk increases with nucleation thickness increasing, whereas the (002) XRD FWHM shows an opposite trend. These phenomena can be attributed to the characteristics of nucleation islands and the evolution of crystal grains during AlN main layer growth.     

GNSS浮标高程测量精度的影响因素研究

针对高度计定标检验的需求,研制了GNSS浮标,并在天津市于桥水库和威海市石岛镇分别进行了浮标性能测试。通过对影响浮标数据处理精度的因素进行研究,为GNSS浮标数据处理方法建立了完整的技术流程,使其满足高度计定标检验的需求。结果表明:GNSS浮标可以满足高度计定标检验的需求;但需特定的数据处理方法。(1)在基准站数据处理中,卫星截止高度角选择为5°~15°,数据采集时间不少于24 h;(2)浮标数据处理模式选择为自动模式,并对其进行移动平均滤波或中值滤波处理后,流动站解算结果最优;(3)GNSS浮标的水面高程测量精度优于1 cm;(4)受到GNSS本身的限制,当浮标距离GNSS基准站越远,浮标数据的解算精度越低。