Research on Zr50Al15−xNi10Cu25Yx amorphous alloys prepared by mechanical alloying with commercial pure element powders

Amorphous Zr₅₀Al_15−xNi₁₀Cu₂₅Y_x alloy powders were fabricated by mechanical alloying at low vacuum with commercial pure element powders. The effects on glass forming ability of Al partial substituted by Y in Zr₅₀Al₁₅Ni₁₀Cu₂₅ and thermal stability of Si₃N₄ powders addition were investigated. The as-milled powders were characterized by X-ray diffraction, scanning electron microscopy and differential scanning calorimeter. The results show that partial substitution of Al can improve the glass forming ability of Zr₅₀Al₁₅Ni₁₀Cu₂₅ alloy. Minor Si₃N₄ additions raise the crystallization activation energy of the amorphous phase and thus improve its thermal stability.     

Structural Transition of Gd2O3：Eu Induced by High Pressure

The structural transition of bulk and uano-size Gd2O3：Eu are studied by high pressure energy disperse x-ray diffraction （XRD） and high pressure photoluminescence. Our results show that in spite of different size of Gd2O3 particles, the cubic structure turns into a possible hexagonal one above 13.4 GPa. When the pressure is released, the sample reverses to the monoclinic structure. No cubic structure presents in the released samples. That is to say, the compression and relaxation of the sample leads to the cubic Gd2O3：Eu then turns into the monoclinic one.     

Structural and Optical Properties of Nanocrystal In2O3 Films by Thermal Oxidation of In2S3 Films

In₂S₃ nanocrystalline films are prepared on glass substrates by the spray pyrolysis technique using indium chloride and thiourea as precursors. The deposition is carried out at 350°C on glass substrates. The films are then annealed for two hour at 200, 400, 600, and 800°C in O₂ flow. This process allows the transformation of nanocrystal In₂O₃ films from In₂S₃ films and the reaction completes at 600°C. These results indicate that the In₂O₃ film prepared by this simple thermal oxidation method is a promising candidate for electro-optical and photovoltaic devices.     

Investigation of magnetic properties and micromagnetic structure of multicomponent Fe61.4Ni3.6Cr3.2Si2.4Nb7.8Mn3.6B18 amorphous ribbons

The magnetic properties and micromagnetic structure (equilibrium distribution of magnetization) of multicomponent Fe_61.4Ni_3.6Cr_3.2Si_2.4Nb_7.8Mn_3.6B₁₈ amorphous ribbons are studied using scanning Kerr microscopy and a vibrating sample magnetometer. 5-mm-wide and 35-μm-thick ribbons were obtained by hardening of melt in a rapidly rotating drum. Strong difference in the surface and bulk magnetic parameters of the ribbons is established. Domain walls (DW) parallel to the ribbon length are detected. It is shown that quasistatic magnetization reversal of ribbons mainly occurs due to the DW displacement.     

用原位x射线小角散射研究块体非晶合金Zr55Cu30Al10 Ni5的结构弛豫

应用同步辐射x射线小角散射法在原位对块体非晶合金Zr₅₅Cu₃₀Al ₁₀Ni₅在等温退火过程中的微结构变化进行研究.实验表明：在等温退火过程中电子 密度涨落反映了晶化之前的结构弛豫过程；在一定的退火温度下、随退火时间的增加，拓扑短程序弛豫与化学短程序弛豫之间存在一个电子密度均匀化的过程；导致这两种弛豫过程转变的退火时间与退火温度有关，温度越高，所需的退火时间越短. 关键词： 原位x射线小角散射 块体非晶合金 等温退火 结构弛豫     

First-Principles Study of Orthorhombic Perovskites MgSiO3 up to 120 GPa and Its Geophysical Implications

High-pressure behaviour of orthorhombic MgSiO3 perovskite crystal is simulated by using the density functional theory and plane-wave pseudopotentials approach up to 120 GPa pressure at zero temperature. The lattice constants and mass density of the MgSiO3 crystal as functions of pressure are computed, and the corresponding bulk modulus and bulk velocity are evaluated. Our theoretical results agree well with the high-pressure experimental data. A thermodynamic method is introduced to correct the temperature effect on the O-K first-principles results of bulk wave velocity, bulk modulus and mass density in lower mantle PIT range. Taking into account the temperature corrections, the corrected mass density, bulk modulus and bulk wave velocity of MgSiO3-perovskite are estimated from the first-principles results to be 2%, 4%, and 1% lower than the preliminary reference Earth model （PREM） profile, respectively, supporting the possibility of a pure perovskite lower mantle model.     

Patterning of amorphous and polycrystalline Ni78B14Si8 with a focused-ion-beam

The machining response of amorphous and crystalline Ni₇₈B₁₄Si₈ was investigated when structuring substrates using focused-ion-beam (FIB) milling. In particular, the sputtering yield as a function of the scan speed, and the effects of ion fluence and scan speed on the milled depth were studied. The ion fluence dependent evolution of the cross-sectional profiles of trenches was examined by atomic force microscopy (AFM). When milling amorphous Ni₇₈B₁₄Si₈, it was found that the sputtering yield first decreased with increasing the beam scan speed, then kept constant within the scan speed range, up to 710 nm/s, investigated in this work; it was also found that the milled depth was almost proportional to the ion beam fluence. The patterning of polycrystalline Ni₇₈B₁₄Si₈ resulted in anisotropic milling-rates due to the varying orientation of the grains in the material. The analysis of the profile evolution in both materials indicated that the surface finish of trenches was scan speed, ion beam fluence and scan strategy dependent. The study demonstrated that direct patterning by FIB could be used for producing masters in amorphous Ni-based alloys for injection moulding and hot embossing.     

Superconducting Transition Temperature and Metal--Semiconductor Transition Temperature in YBa2Cu4O8/La0.67Ca0.33MnO3/YBa2Cu4O8 Trilayer Films

YBa₂Cu₄O₈/La_0.67Ca_0.33MnO₃/YBa₂Cu₄O₈(YBCO/LCMO/YBCO) trilayer films were prepared by magnetron facing-target sputtering. For the first time, the oscillatory behaviour of superconducting transition temperature T_c,ON with the thickness of LCMO (d_L) has been observed. The strongest nonmonotonic information in the T_c,ON--d_L curves appears clearly when d_L is larger than the critical thickness d_L^CR. The metal--semiconductor transition temperature can only be detected at d_L>d_L^CR. The dependence on the ferromagnetic spacer layer in YBCO/LCMO/YBCO systems suggests strongly the interplay of ferromagnetic and superconducting couplings.     

Relaxor Behaviour and Ferroelectric Properties of （Li0.12Na0.88） （Nb0.9-xWa0.10Sbx）O3 Lead-Free Ceramics

New lead-free ceramics （Lio.12Na0.88） （Nbo.9-x Ta0.10 Sbx） 03 （0.01 × 0.06） are synthesized by solid-state reaction method. The dielectric, piezoelectric and ferroelectric properties of the ceramics are studied. The dielectric constant dependence with temperature and frequency of the ceramic specimen with x = 0.04 shows typical characteristics of relaxor ferroelectrics, and the Vogel-Fulcher relationship is fulfilled. The dielectric behaviour and its relation to the phase transition phenomena are discussed. The polarization hysteresis loops at room temperature are also measured.     

Amorphization Induced High Magneto-Caloric Effect of Gd55Al20Ni25 Ternary Alloy

We report the amorphization induced high magneto-caloric effect （MCE） of recently developed Gd55Al15Ni30 bulk metallic glass （BMG）. The magnetic properties of the Gd55Al15Ni30 BMG are investigated in comparison with that of its crystalline counterpart. It is found that amorphization can increase the saturation magnetization and decrease the hysteresis of Gd55Al15Ni30 alloys, which indicate the possible enhancement of MCE. The magnetic entropy changes and the refrigerant capacity of the BMG as well as the crystalline samples is calculated directly from isothermal magnetic measurements. The results show the amorphization induced high MCE of the alloy and the excellent refrigerant efficiency of Gd55Al15Ni30 bulk metallic glass.     

Structure peculiarities of material formed by dynamic compacting of amorphous powders

Abstract

Structure and some properties of compacts dynamically produced from powders of Fe₈₂B₁₂Si₄C₂ and Co₅₉Ni₁₀Fe₅B_15.5Si_10.5 amorphous alloys are analyzed. The compacts of amorphous materials exhibit higher thermal stability as compared with that of starting powders.     

Synthesis of nanocrystalline magnesium nitride (Mg3N2) powder using thermal plasma

Nanocrystalline magnesium nitride (Mg₃N₂) powder was synthesized from bulk magnesium by thermal plasma at atmospheric pressure. Magnesium vapor was generated through heating the bulk magnesium by DC plasma jet and reacted with ammonia gas. Injecting position and flow rates of ammonia gas were controlled to investigate an ideal condition for Mg₃N₂ synthesis. The synthesized Mg₃N₂ was cooled and collected on the chamber wall. Characteristics of the synthesized powders for each experimental condition were analyzed by X-ray diffractometer (XRD), scanning electron microscopy (SEM) and thermogravity analysis (TGA). In absence of NH₃, magnesium metal powder was formed. The synthesis with NH₃ injection in low temperature region resulted in a formation of crystalline magnesium nitride with trigonal morphology, whereas the mixture of magnesium metal and amorphous Mg₃N₂ was formed when NH₃ was injected in high temperature region. Also, vaporization process of magnesium was discussed.     

Photoemission Spectroscopy and Electronic Structures of LiMn2O4

We study the electronic structures of LiMn2O4 by x-ray and ultraviolet photoelectron spectroscopy （XPS, UPS） and resonant photoelectron spectroscopy （RPES）. XPS data suggest that the average oxidation state of Mn ions is 3.55, probably due to the small amount of lithium oxides on the surface. UPS and RPES data imply that Mn ions are in a high spin state, and RPES results show strong Mn3d-O2p hybridization in the LiMn2O4 valence band.     

Preparation of Cu（In,Ga）Se2 Thin Film Solar Cells by Selenization of Metallic Precursors in an Ar Atmosphere

Cu（In, Ga）Se2 thin films are deposited on Mo-coated glass substrates by Se vapour selenization of sputtered metallic precursors in the atmosphere of Ar gas flow under a pressure of about 10 Pa. The in situ heat treatment of as-grown precursor leads to the formation of a better alloy. During selenization, the growth of CuInSe2 phase preferably proceeds through Se-poor phases as CuSe and InSe at relatively low substrate temperature of 250℃, due to the absence of In2Se3 at intermediate stage at low reactor pressure. Subsequently, the Cu（In,Ga）Se2 phase is produced by the reactive diffusion of CuInSe2 with a Se-poor GaSe phase at high temperature of up to 560℃. The final film exhibits smooth surface and large grain size. The absorber is used to fabricate a glass/Mo/Cu（In, Ga）Se2/CdS/ZnO cell with the total-area efficiency of about 7%. The low open-circuit voltage value of the cell fabricated should result from the nonuniform distribution of In and Ga in the absorber, due to the diffusion-controlled reaction during the phase formation. The films, as well as devices, are characterized.     

A comparative study of the structure and crystallization of bulk metallic amorphous rod Pr60Ni30Al10 and melt-spun metallic amorphous ribbon Al87Ni10Pr3

Pr-based bulk metallic amorphous （BMA） rods （Pr60Ni30Al10） and Al-based amorphous ribbons （Al87Ni10Pr3） have been prepared by using copper mould casting and single roller melt-spun techniques, respectively. Thermal parameters deduced from differential scanning calorimeter （DSC） indicate that the glass-forming ability （GFA） of Pr60Ni30Al10 BMA rod is far higher than that of Al87Ni10Pr3 ribbon. A comparative study about the differences in structure between the two kinds of glass-forming alloys, superheated viscosity and crystallization are also made. Compared with the amorphous alloy Al87Ni10Pr3, the BMA alloy Pr60Ni30Al10 shows high thermal stability and large viscosity, small diffusivity at the same superheated temperatures. The results of x-Ray diffraction （XRD） and transmission electron microscope （TEM） show the pronounced difference in structure between the two amorphous alloys. Together with crystallization results, the main structure compositions of the amorphous samples are confirmed. It seems that the higher the GFA, the more topological type clusters in the Pr-Ni-Al amorphous alloys, the GFAs of the present glass-forming alloys are closely related to their structures.     

Electrical Properties of La-Doped Al2O3 Films on Si （100） Substrates as a High-Dielectric-Constant Gate Material

Amorphous La-doped Al2O3 （La： Al2O3） thin films are deposited on n-type （100） Si substrates by rf magnetron co-sputterlng. The composition of the deposited films is measured by energy dispersive x-ray spectroscopy： Capacitance-voltage measurement shows that the dielectric constant k of La-doped Al2O3 films ranges from 8.5 to 11.6 with the increasing La content, and the highest k value of 11.6 is obtained for the 20.14% La content film. In the structure of the Al/La：Al2O3/Si metal oxide semiconductor, the dominant conduction stems from the space- charge-limited current at different temperatures. In addition, the wavelength dependence of the transmittance is studied by ultraviolet spectroscopy and the band gap of all the deposited films is above 5.5eV. The results demonstrate that La-doped Al2O3 can meet the requirement of next-generation gate materials.     

Ductile Bulk Aluminum-Based Alloy with Good Glass-Forming Ability and High Strength

Based on a new approach for designing glassy alloy compositions, bulk Al-based alloys with good glass-forming ability （GFA） are synthesized. The cast Al86Si0.5Ni4.06Co2.94 Y6Sc0.5 rod with a diameter of i mm shows almost fully amorphous structure besides about 5% fcc-Al nucleated in the center of the rod. The bulk alloy with high Al concentration exhibits an ultrahigh yield strength of 1.18 GPa and maximum strength of 1.27 GPa as well as an obvious plastic strain of about 2.4% during compressive deformation. This light Al-based alloy with good GFA and mechanical properties is promising as a new high specific strength material with good deformability.     

Optical Waveguide Formed in RbTiOPO4 Crystal by 6.0 MeV O^3＋ Implantation

A planar optical waveguide was formed in RbTiOP04 crystal by 6.0-MeV oxygen ion implantation with the dose of 2 × 10^15 ions/cm2 at room temperature. Annealing at 200℃ for 30min in air is performed to improve the thermal stability of the waveguide. The dark modes of the waveguide are measured at wavelengths 633 and 1539 nm, respectively. The refractive index profiles in the guiding layer are reconstructed by using the reflectivity calculation method. TRIM＇98 code was carried out to simulate the damage profiles caused by the implantation process to obtain a better understanding of the waveguide formation.     

Electronic Structure and Magnetic Properties of SmCo7-xZrx

The electronic structure and magnetism of SmCo_7-xZr_x alloy are investigated using the spin-polarized MS-X. method. The results show that a few of electrons are transferred to the Sm(5d⁰) orbital due to orbital hybridization between Sm and Co atoms. The exchange interactions between 3d and 5d electrons are more important than the polarization effects of the conductive electrons, thus it is the main reason resulting in the long-range ferromagnetic order in SmCo_7-xZr_x. The Curie temperature of SmCo_7-xZr_x is generally lower than that of corresponding pure Co, which may be explained by the weaker average coupling strength between Co lattices due to some negative couplings mainly occurring of 2e site. The calculated results for the Sm₅Co₃₂Zr₂ cluster may lead to a better understanding of why SmCo_7-xZr_x is stable phase. Since the spin-up DOS peak of d electrons at E_F arises and the bonding of electrons at E_F strengthens with increasing Zr concentration, which results in the internal energy of the system decrease, the stable ferromagnetic order forms in SmCo_7-xZr_x.     

High Efficient C6H12 Raman Laser Enhanced by DCM Fluorescence

We report the first-order Stokes output （wavelength of 627.6 nm） from C6H12 enhanced by DCM dye fluorescence with high energy conversion efficiency of 47.9%, quantum conversion efficiency of 56.5%. To our knowledge, it is the highest conversion efficiency of stimulated Raman scattering obtained from liquid Raman laser. A 532nm frequency doubled Nd：YAG laser with 8 Hz repetition rate is employed as the pump source, and the enhancement medium is DCM dye solution in ethanol. The conversion efficiencies at various pump energies and various pump repetition rates are measured and analysed. The enhancement mechanism of SRS together with its potential application is discussed.