Effect of lattice defects on the thermal conductivity of β-Si3N4

Two types of β-Si₃N₄ were sintered at 1900 °C one for 8 h and the other for 36 h by using Yb₂O₃ and ZrO₂ as sintering additives. The latter specimen was further annealed at 1700 °C for 100 h to promote grain growth. The microstructures of the sintered materials were investigated by SEM, TEM, and EDS. The thermal conductivities of the specimens were 110 and 150 Wm⁻¹K⁻¹, respectively. The sintered material which possessed 110 Wm⁻¹K⁻¹ had numerous small precipitates that consisted of Yb, O and N elements and internal dislocations in the β-Si₃N₄ grains. In the sintered material with 150 Wm⁻¹K⁻¹ neither precipitates nor dislocations were observed in the grains. The microscopic evidence indicates that the improvement in the thermal conductivity of the β-Si₃N₄ was attributable to the reduction of internal defects of the β-Si₃N₄ grains with sintering and annealing time as the grains grew.     

Effect of large β-Si3N4 particles on the thermal conductivity of β-Si3N4 ceramics

Mean-field micromechanics model, the rule of mixture is applied to the prediction of the thermal conductivity of sintered β-Si₃N₄, considering that the microstructure of β-Si₃N₄ is composed of a uniform matrix phase (which contains grain boundaries and small grains of Si₃N₄) and the purified large grains (⩾2 μm in diameter) of Si₃N₄. Experimental results and theoretical calculations showed that the thermal conductivity of Si₃N₄ is controlled by the amount of the purified large grains of Si₃N₄. The present study demonstrates that the high thermal conductivity of β-Si₃N₄ can be explained by the precipitation of high purity grains of β-Si₃N₄ from liquid phase.     

Effect of the addition of β-Si3N4 nuclei on the thermal conductivity of β-Si3N4 ceramics

Various microstructures of β-Si₃N₄ were fabricated, with or without the addition of β-Si₃N₄ seed particles to high-purity β-Si₃N₄ powder, using Yb₂O₃ and ZrO₂ as sintering additives, by gas-pressure sintering at 1950 °C for 16 h. The thermal conductivity of the specimen without seeds was 140 W·(m·K)⁻¹, and the specimen exhibited a bimodal microstructure with abnormally grown grains. The thermal conductivity of the specimen with 24 vol.% seed addition was 143 W·(m·K)⁻¹, and this specimen had the bimodal microstructure with finer grain size than that without the seeded material, but maintained the same amount of large grains (⩾2 μm in diameter) as in the specimen without the seeds. This finding indicates that the thermal conductivity of β-Si₃N₄ is controlled by the amount of reprecipitated large grains, rather than by the grain size of the β-Si₃N₄.     

Effect of in-situ formed Y2O3 by metal hydride reduction reaction on thermal conductivity of β-Si3N4 ceramics

The effect of YH₂ on densification, microstructure, and thermal conductivity of Si₃N₄ ceramics were investigated by adjusting the amount of YH₂ in the range of 0–4 wt% using a two-step sintering method. Native SiO₂ was eliminated, and Y₂O₃ was in situ formed by a metal hydride reduction reaction, resulting in various Y₂O₃/SiO₂ ratios. Full densification of YH₂-doped samples could be achieved after sintering at 1900 °C for 4 h. The Y₂O₃/SiO₂ ratio had a significant influence on the composition of crystalline secondary phases. Besides, the increased Y₂O₃/SiO₂ ratio is conducive not only to the grain growth but also to the reduction of activity of SiO₂ in the liquid phase, resulting in enlarged purified grains, reduced volume fraction of intergranular phases and increased Si₃N₄-Si₃N₄ contiguity. Ultimately, the thermal conductivity increased by 29 % from 95.3 to 123.0 W m⁻¹ K⁻¹ after sintering at 1900 ℃ for 12 h by the substitution of Y₂O₃ with YH₂.     

Effect of β-Si3N4 starting powder size on elongated grain growth in β-Si3N4 ceramics

The microstructural evolution of pressureless sintered silicon nitride ceramics prepared from different particle sizes of β-Si₃N₄ as starting powders, has been investigated. When the specimen prepared from as-received β-powder of 0.66 μm in average size, was sintered at 1850°C, equiaxed β-Si₃N₄ grains were observed. As the size of the initial β-powder went down to 0.26 μm, however, the growth of elongated grains was enhanced, which resulted in a whisker-like microstructure similar to that made from α-starting powder. When the sintering temperature was increased to 2000°C, the elongated grains were also developed even in the specimen made from 0.66 μm β-powder. The observed results were discussed with relation to the two dimensional nucleation and growth theory for faceted crystals. In addition, fracture toughness of the specimen consisting of elongated grains, which was prepared from finer powders, increased.     

Effect of the residual phases in β-Si3N4 seed on the mechanical properties of self-reinforced Si3N4 ceramics

In this work, the self-reinforced silicon nitride ceramics with crystal seed of β-Si₃N₄ particles were investigated. Firstly, the seeds were prepared by heating of α-Si₃N₄ powder with Yb₂O₃ and MgO, respectively. Then the self-reinforced silicon nitride ceramics were obtained by HP-sintering of α-Si₃N₄ powder, Yb₂O₃ and the as-prepared seeds which were not treated with acid and/or alkali solution. The results indicated that the introduction of seed with Yb₂O₃ could obviously increase the toughness and room temperature strength of the ceramics. Furthermore, its high temperature strength (1200 °C) could nearly keep higher value as the one of room temperature measured from unreinforced ceramic. However, the seed with MgO abruptly decrease the high temperature strength of the ceramics. The SEM and TEM characterization showed that the rod-like seed particle could favor the toughness and the presence of the Mg promote the formation of crystalline secondary phase.     

ZrSi2–MgO as novel additives for high thermal conductivity of β-Si3N4 ceramics

A novel ZrSi₂–MgO system was used as sintering additive for fabricating high thermal conductivity silicon nitride ceramics by gas pressure sintering at 1900°C for 12 hours. By keeping the total amount of additives at 7 mol% and adjusting the amount of ZrSi₂ in the range of 0-7 mol%, the effect of ZrSi₂ addition on sintering behaviors and thermal conductivity of silicon nitride were investigated. It was found that binary additives ZrSi₂–MgO were effective for the densification of Si₃N₄ ceramics. XRD observations demonstrated that ZrSi₂ reacted with native silica on the Si₃N₄ surface to generate ZrO₂ and β-Si₃N₄ grains. TEM and in situ dilatometry confirmed that the as formed ZrO₂ collaborated with MgO and Si₃N₄ to form Si–Zr–Mg–O–N liquid phase promoting the densification of Si₃N₄. Abnormal grain growth was promoted by in situ generated β-Si₃N₄ grains. Consequently, compared to ZrO₂-doped materials, the addition of ZrSi₂ led to enlarged grains, extremely thin grain boundary film and high contiguity of Si₃N₄–Si₃N₄ grains. Ultimately, the thermal conductivity increased by 34.6% from 84.58 to 113.91 W·(m·K)⁻¹ when ZrO₂ was substituted by ZrSi₂.     

Enhanced thermal conductivity of low-temperature sintered borosilicate glass–AlN composites with β-Si3N4 whiskers

The effects of β-Si₃N₄ whiskers on the thermal conductivity of low-temperature sintered borosilicate glass–AlN composites were systematically investigated. The thermal conductivity of borosilicate glass–AlN ceramic composite was increased from 11.9 to 18.8 W/m K by incorporating 14 vol% β-Si₃N₄ whiskers, and high flexural strength up to 226 MPa were achieved along with low relative dielectric constant of 6.5 and dielectric loss of 0.16% at 1 MHz. Microstructure characterization and percolation model analysis indicated that thermal percolation network formation in the ceramic composites led to the high thermal conductivity. The crystallization of the borosilicate microcrystal glass also contributed to the enhancement of thermal conductivity. Such ceramic composites with low sintering temperature and high thermal conductivity might be a promising material for electronic packaging applications.     

Enhancement of thermal shock resistance in β-Si3N4 coating with in situ synthesized β-Si3N4 nanowires/nanobelts on porous Si3N4 ceramics

A dense β-Si₃N₄ coating toughened by β-Si₃N₄ nanowires/nanobelts was prepared by a combined technique involving chemical vapor deposition and reactive melt infiltration to protect porous Si₃N₄ ceramics in this work. A porous β-Si₃N₄ nanowires/nanobelts layer was synthesized in situ on porous Si₃N₄ ceramics by chemical vapor deposition, and then Y–Si–Al–O–N silicate liquid was infiltrated into the porous layer by reactive melt infiltration to form a dense composite coating. The coating consisted of well-dispersion β-Si₃N₄ nanowires/nanobelts, fine β-Si₃N₄ particles and small amount of silicate glass. The testing results revealed that as-prepared coating displayed a relatively high fracture toughness, which was up to 7.9 ± 0.05 MPa m^1/2, and it is of great significance to improve thermal shock resistance of the coating. After thermal cycling for 15 times at ΔT = 1200 °C, the coated porous Si₃N₄ ceramics still had a high residual strength ratio of 82.2%, and its water absorption increased only to 6.21% from 3.47%. The results will be a solid foundation for the application of the coating in long-period extreme high temperature environment.     

Low temperature heat capacity measurements of β-Si3N4 and γ-Si3N4: Determination of the equilibrium phase boundary between β-Si3N4 and γ-Si3N4

Isobaric heat capacities of β-Si₃N₄ and γ-Si₃N₄ were measured at temperatures between 1.8 and 309.9 K with a thermal relaxation method. The measured heat capacities of γ-Si₃N₄ are smaller than those of β-Si₃N₄ in this temperature range. Using these data, we determined the standard entropies of β-Si₃N₄ and γ-Si₃N₄ to be 62.30 J·mol⁻¹ K⁻¹ and 51.79 J·mol⁻¹ K⁻¹, respectively. The equilibrium phase boundary between β-Si₃N₄ and γ-Si₃N₄ was calculated using these values and thermodynamic parameters reported in previous studies. The obtained equilibrium phase transition pressure at 2000 K is 11.4 GPa. It is lower than the experimental pressures at which γ-Si₃N₄ was synthesized in previous studies. The calculated Clapeyron slope at this temperature is 0.6 MPa K⁻¹, which is consistent with those of theoretical studies.     

Synthesis of β-Si3N4 particles from α-Si3N4 particles

This report describes an investigation of the synthesis of β-Si₃N₄ particles from α-Si₃N₄ particles. The β fraction of Si₃N₄ particles was found to depend on temperature, heating time, and the type of crucibles in which the Si₃N₄ particles were heated. When Si₃N₄ particles were heated in a crucible made of carbon, most α-Si₃N₄ particles converted to β-Si₃N₄ after heating at 2000°C for 90 min in an atmosphere of N₂ of 9 kgf/cm². The morphology of the resulting β-Si₃N₄ particles appeared as a whisker shape. When Si₃N₄ particles were heated in a crucible made of boron nitride, most α-Si₃N₄ particles converted to β-Si₃N₄ after heating at 2000°C for 480min in an atmosphere of N₂ of 9kgf/cm². The resulting morphology was equiaxed. It is suspected that the transformation occurs via the gas phase and is affected by the partial pressure of oxygen in the atmosphere.     

Origin of the existence of inter-granular glassy films in β-Si3N4

Inter-granular glassy films (IGFs) are ubiquitous in structural ceramics and they play a critical role in defining their properties. The detailed origin of IGFs has been debated for decades with no firm conclusion. Herein, we report the result of quantum mechanical modeling on a realistic IGF model in β-Si₃N₄ that unravels the fundamental reason for its development. We calculate the electronic structure, interatomic bonding, and mechanical properties using ab initio density functional theory with parallel calculations on crystalline β-Si₃N₄, α-Si₃N₄, γ-Si₃N₄, and Si₂N₂O. The total bond order density—a quantum mechanical metric characterizing internal cohesion—of the IGF model and crystalline β-Si₃N₄ are found to be identical. Detailed analysis shows that weakening of the bonds in the glassy film is compensated by strengthening of the interfacial bonds between the crystalline grain and the glassy layer. This provides a natural explanation for the ubiquitous existence of IGFs in silicon nitride and other structural ceramics. Moreover, the mechanical properties of this IGF model reveal its structural flexibility due to the presence of the less rigid glassy layer. This work demonstrates that high-level computational modeling can now explain some of the most intriguing phenomena in nanoscale ceramic materials.     

Effect of α-Si3N4 initial powder size on the microstructural evolution and phase transformation during sintering of Si3N4 ceramics

By using the Si₃N₄ ceramic specimens prepared with fine and coarse α-Si₃N₄ powders, respectively, the phase transformation from α- to β-Si₃N₄ and concurrent microstructural evolution during sintering were monitored. For the compact prepared with fine powder, the α/β transformation was completed much earlier than the coarse powder. The higher fraction of pre-existing β-grains in fine powder and its higher reactivity compared to those of coarse one are likely to cause a rapid phase transformation. The growth rate of β-Si₃N₄ grains at the expense of α-Si₃N₄ during phase transformation stage was quite significant while that after they impinge each other was very limited. As a result, the specimens prepared with coarse and fine initial α-Si₃N₄ powders resulted in coarse and fine grained β-Si₃N₄ ceramics, respectively. The specimen prepared with mixture of fine and coarse α-Si₃N₄ powders exhibited the microstructure containing a few elongated large grains and showed an increased value of fracture toughness.     

Influence of β-Si3N4 whiskers on sintering and crystallization of fused silica ceramics

Fused silica ceramics are widely applied for radome materials, crucibles, and vanes, but the mechanical properties were deteriorated due to the cristobalite crystallization. The fused silica ceramics added with by β-Si₃N₄ whiskers were prepared by a slip-casting method to retard the cristobalite crystallization. The influences of the sintering environments and the β-Si₃N₄ whiskers on the microstructure and phase structure were investigated. The silanol (Si-(OH)_n) and oxygen vacancies (V_O) in the fused silica in formed in different conditions were studied by Fourier Transform Infra-Red (FT-IR) and X-ray photoelectron spectroscopy (XPS), and the results indicated that the ball-milled produced a large amount of the silanol groups onto the surface of the fused silica particles. The fused silica heated in the vacuum created the maximum oxygen vacancies (24.2%) on the surfaces. Silanol groups reacted with the β-Si₃N₄ whiskers, and the O atoms in the silanol groups were fixed into the bulk materials. And the crystallization kinetics and the activation energy of Si₃N_4w/SiO₂ ceramics at the temperature ranging from 1200 to 1400°C were calculated based on the JMA(Johnson-Mehl-Avrami) model. The activation energy of the fused silica ceramics with the addition of the β-Si₃N₄ is 506.2 kJ/mol, increased by 23.6% than that of the pure fused silica ceramic.     

Effect of N–Ni coordination bond on the electrical and thermal conductivity of epoxy resin/nickel-coated graphite

The agglomeration of nickel-coated graphite (NCG) in epoxy resin (EP) composites leads to low electrical conductivity of EP composites, which limits their development in electronic devices and multilayer circuits. In order to improve the electrical and thermal conductivity of NCG/EP composites, ethylenediamine (EDA) was used to modify NCG and compared with pure NCG-filled EP composites. It was found that the conductive effect of modified composites with 20 wt% filler is better than that of unmodified composites with 40 wt% filler. The results of Fourier transform infrared spectroscopy and thermogravimetric analysis of EDA-modified NCG (ENCG) showed that a coordination adsorption reaction occurred between EDA and NCG, forming N–Ni coordination bonds. When the filling amount of ENCG was 40 wt%, the conductivity and thermal conductivity of the composite are improved most significantly. The volume resistivity was reduced from 2.636 to 0.109 Ω cm, a decrease of 95.85%, and the thermal conductivity was improved from 0.517 to 0.968 W/(m K), an increase of 87.23%, respectively. Meanwhile, ENCG has better dispersion in the EP matrix than NCG.     

Combustion synthesis of well-dispersed rod-like β-Si3N4 crystals by the addition of carbon

The well-dispersed rod-like β-Si₃N₄ crystals have been prepared by combustion synthesis with the addition of carbon. The added carbon helps to separate Si particles and remove the SiO₂ oxide layer, and thus reduces the agglomeration of β-Si₃N₄ crystals. By adding carbon, the reaction temperature and the width of β-Si₃N₄ crystals are decreased, but the aspect ratio of β-Si₃N₄ crystals is increased. The well-dispersed β-Si₃N₄ crystals with an average width of 0.84 μm and aspect ratio of 2.3 are produced by adding 2 wt% carbon. When 5 wt% carbon is added, the reaction temperature is too low and the nitridation of Si becomes incomplete, and at the same time much SiC occurs in the product.     

Effect of additives on the thermal conductivity of zirconium diboride based composites – A review

Re-entry space vehicle necessities sharp leading edges for better aerodynamic performance and, hence, require advanced thermal protection materials with improved safety for crew members. Material possessing high thermal conductivity and oxidation resistance are desirable at nose cap and wings leading edge of spacecraft. Consequently, the thermal shock resistance improves due to reduced thermal gradient and stresses. ZrB₂ has drawn strong impetus for futuristic space vehicles as thermal protection materials under extreme thermal environments. This study reviews the effect of the incorporation of non-carbonaceous and carbon additives on the thermal conductivity of ZrB₂ ceramics and based composites. Several factors such as the purity of starting powder, initial particle size, amount of sintering aids, processing route, porosity, the grain size of ZrB₂ matrix, distribution of secondary phases in the matrix and sinter density of the final composite, controls the overall thermal conductivity of ZrB₂ based composites.     

Effect of particle size and shape of diluent on the reaction process of combustion synthesis of α-Si3N4 powder

α-Si₃N₄ powder was prepared by combustion synthesis using different particle sizes and shapes of Si₃N₄ diluent. The effects of different diluents on combustion temperature, phase composition, and microstructure of the product were investigated. The role of diluents in combustion synthesis is discussed. When no ammonium salt was added, because of the higher reaction temperature, the phase transformation of the fine particle diluent with the best barrier effect was also enhanced, and the α content of the product was the lowest. When the ammonium salt is added, the liquid phase Si content decreases at high temperatures, the lower reaction temperature and the Si₃N₄ generated before Si melting make the barrier effect of the diluent fully play. Finally, Si₃N₄ powder with 86% α content was synthesized by combustion with 2 μm Si₃N₄ diluent.     

Improved thermal conductivity of β-Si3N4 ceramics by lowering SiO2/Y2O3 ratio using YH2 as sintering additive

A two-step sintering process was conducted to produce β-Si₃N₄ ceramics with high thermal conductivity. During the first step, native SiO₂ was eliminated, and Y₂O₃ was in situ generated by a metal hydride reduction process, resulting in a high Y₂O₃/SiO₂ ratio. The substitution YH₂ for Y₂O₃ endow Si₃N₄ ceramics with an increase of 29% in thermal conductivity from 95.3 to 123 W m⁻¹ K⁻¹ after sintered at 1900°C for 12 hours despite an inferior sinterability. This was primarily attributed to the purified enlarged grains, devitrified grain boundary phase, and reduced lattice oxygen content in the YH₂-MgO-doped material.     

Polymer-derived preparations of the blue-excited greenish-yellow-emitting calcium-containing β-Si3N4:Eu-like phosphors

Polymer-derived greenish-yellow emitting silicon (oxy)nitride phosphors excited by blue light were prepared by using polycarbonsilane, europium (Eu) and calcium (Ca) acetylacetonates as raw materials. The chemical compositions, crystal phases, particle morphologies and microstructures of the samples prepared with Eu, and/or Ca, and none of any metal ions were studied and are compared. It was found that the Ca-containing Eu-activated silicon (oxy)nitride sample prepared with the atomic ratios of Eu/Si and Ca/Si being 0.06 and 0.12, respectively, was composed mainly of single crystallized particles in the β-Si₃N₄-like phase with Eu^2+/3+ and Ca²⁺ ions locating at interstices of the β-Si₃N₄-like lattices. This sample demonstrated a substantial increment in the intensity of its broad and spike-less emission spectrum excited at 468 nm as compared to that for the Ca-free sample with its major emission peak being at 570 nm, and recorded a CIE coordinate (0.3386, 0.3474) near the equal energy white point with a Ra value of 71.4 when employed as the phosphor for a white light emitting diode device with blue chip of 460 nm. The emission mechanisms of Eu-activated for the Ca-free sample and the Ca-containing sample, the later res-shifted the major excitation band from the near-ultraviolet to blue, are discussed based on the experimental data.