荧光粉比例对白光LED特性的影响

用黄色和橙色硅酸盐荧光粉制备了白光LED,调整黄粉和橙粉的比例得到不同的色温.对样品进行光学测试,发现黄粉与橙粉的比例小于7时,黄光部分的峰值约590 nm,比例大于7时,黄光部分的峰值约570 nm;显色指数和流明效率都是随色温的增大先上升后下降,5521 K时达到最优值,这是由于低色温时,荧光粉的浓度大导致不能有效...     

涂敷红、绿荧光粉的白光LED显色性研究

通过蓝光发光二极管(LED)芯片激发红、绿两种荧光粉制作白光LED,首先保持两种荧光粉的配比不变,依次从2700～13000 K改变相关色温,发现在某一色温段时,显色指数达到最高.然后依次改变两种荧光粉的配比,重复试验,发现不同的荧光粉配比,达到最高显色指数所对应的色温段不同.试验结果表明,通过合理匹配红、绿荧光粉和硅胶三者之间的比例.可以实现在2700～13000 K之间的任一色温区,显色指数均能达到90以上,在4000 K以下的低色温区,显色指数可达到96.基于此.通过选择和匹配LED蓝光芯片、荧光粉的激发、发射波长,以及它们之间的比例关系,可以实现在任意色温段使显色指数最大化的白光LED光谱设计.     

基于偏最小二乘回归的荧光粉涂覆型白光LED的光谱预测研究

为了更便捷高效地对荧光粉涂覆型白光LED的发光光谱进行预测,利用GaN蓝光LED芯片与杭州萤鹤光电材料有限公司的YH-S525M绿色荧光粉和YH-C640E红色荧光粉进行实验样品的制备。分别测量其单色荧光光谱,测得蓝光芯片的发射峰波长为453 nm,选用的红色和绿色荧光粉的发射峰波长分别为631和526 nm。制备红色和绿色荧光粉通过AB胶混合并涂覆于蓝光芯片上的LED实验样品,红粉/绿粉质量比设置为1∶3,1.2∶3,1.4∶3,1.6∶3,1.8∶3,2∶3,红粉混胶后的浓度为7%,9%,11%,13%,15%,17%。每组质量比和混胶浓度条件下的样品制备3~5份,利用杭州远方色谱有限公司的HAAS-2000高精度快速光谱辐射计测试样品的发光光谱,并进行蓝峰归一化处理得到共36组光谱数据。将白光光谱视为蓝色,绿色和红色三种单色荧光光谱的线性叠加,蓝色和红色峰项直接选用对应的发射谱,而绿色峰项选用两个高斯线型方程拟合,系数均由强度决定。通过循环搜索算法,分别计算36组实验条件下的模型参数最优值,对拟合结果进行优度检验,R2的范围为99.33%~99.88%。然后运用偏最小二乘回归方法建立荧光粉质量比和浓度与模型参数间的回归方程,最终得到一种能够精确预测两种荧光粉混合涂覆的白光LED发光光谱的新方法。用一组新制备的样品测得的光谱功率分布进行预测效果检验,得到的预测光谱相对于实测光谱的拟合优度为99.62%,证明该方法的预测效果良好。该研究建立的预测模型从该类型的白光LED的发光机理出发,分析发光时两种荧光粉之间的相互作用,并引入绿色荧光谱线的展宽效应,更加简单有效地建立起两种荧光粉的质量比和混胶浓度与白光光谱间的数学关系。该方法具有更好的普适性,为荧光粉涂覆型LED的光源参数优化提供了一种新的思路。     

白光LED用碱土金属硅酸盐荧光粉的光谱性质

采用固相法合成了A:(SrBa)3SiO5:0.024Ce3 ,0.024Li ;B:Sr2.73M0.2SiO5:0.07Eu2 (M=Ba,Mg,Ca);C:(SrBa)3SiO5:xEu2 三个系列的硅酸盐荧光粉。测量了它们的激发光谱和发射光谱。Ce3 激活的硅酸盐荧光粉(A系列)有351,418nm两个激发峰,418nm这个峰较强。随着Ba离子含量的增加,发射光谱峰值波长出现了红移。因此,改变Ba离子的含量,可以改变荧光粉的发射峰值波长,进而调整白光LED的色坐标和显色指数等指标。Eu2 激活的硅酸盐荧光粉(B,C系列)激发光谱是从350～450nm的宽带激发。Ce3 激活的荧光粉发射峰波长要比Eu2 激活的短,在540～555nm左右,而Eu2 激活的发射峰波长在570～583nm范围。在Sr2.73M0.2SiO5:0.07Eu2 系列(B)中,M取Ba时效果较好。在(SrBa)3SiO5:xEu2 系列(C)中,x取不同值发射光谱的峰值波长和半峰全宽有所变化,但是变化的规律不是很明显。用这两种元素作为激活剂的硅酸盐荧光粉均比较适合用于近紫外、紫外和蓝光芯片封装白光LED。在Sr3SiO5:Ce3 ,Li 和Sr3SiO5:Eu2 中掺入Ba可以使发射峰红移。     

白光LED荧光粉层的光学设计及研究

荧光粉粒子浓度的优化设计是改善白光LED颜色品质和流明效率的重要手段。通过光学仿真方法可以分析荧光粉层不同粒子浓度对LED光强分布和色度均匀性的影响。仿真结果表明,随着荧光粉粒子浓度的增加,荧光粉层对蓝光的散射和吸收增强,LED的流明效率增大,光强分布逐渐变均匀,光斑的色度由蓝光逐渐向白光转变。当荧光粉的粒子浓度为105/mm3时,LED的光强分布最均匀,接近朗伯余弦分布。此时,LED光斑的色度坐标接近等能白光源,色度均匀性的空间分布较好。     

新一代白光LED照明用一种适于近紫外光激发的单一白光荧光粉

首次报道单一Sr2MgSiO5：Eu^2 材料的白光发射性质。发射光谱由两个谱带组成,分别位于470,570nm处,并具有不同的荧光寿命,归结为处于不同格位上的二价铕离子的发射,它们混合成白光。这两个发射带所对应的激发光谱均分布在250～450nm的紫外区,利用该荧光粉和具有400nm近紫外光发射的InGaN管芯制成了白光LED。正向驱动电流为20mA时,色温为5664K;发光色坐标为x=0．33,y=0．34;显色指数为85％;光强达8100cd／m^2。实验表明,器件的色坐标和显色指数等参数随正向驱动电流的变化起伏量小于5％,优于目前商用的蓝光管芯泵浦白光LED,报道的单一白光荧光粉在新一代白光LED照明领域具有广阔的应用前景。     

功率型白光LED光学特性退化分析

将GaN基蓝光芯片涂敷YAG荧光粉和透明硅胶制成额定功率为1 W的白光发光二极管(LED),对其施加900mA的电流应力,在老化过程中测量白光LED的主要光学参数,考察其光学特性的退化情况。经过4 200 h的老化,样品光通量退化为初始值的15%~18% 。样品的漏电流明显增大,表明芯片有源区缺陷密度提高,但光谱分布图中蓝光部分的辐射量未减少,仅观察到黄光部分辐射量的减少,推断出YAG荧光粉的转换效率降低。同时,从原理上分析了样品色温逐渐增大,显色指数基本不变的原因,对大功率白光LED在照明领域的应用有一定的借鉴意义。     

全光谱照明LED中的蓝绿色荧光粉研究

采用高温固相法合成了BaSi₂O₂N₂:Eu²⁺蓝绿色荧光粉,在440~460 nm蓝光激发下,该荧光粉发射峰值波长488 nm的蓝绿色光。通过共掺杂微量Mg²⁺和Ge⁴⁺离子,BaSi₂O₂N₂:Eu²⁺蓝绿色荧光粉的热猝灭性能显著提升。在蓝光芯片激发下,使用BaSi₂O₂N₂:Eu²⁺蓝绿色荧光粉搭配Y₃（Al,Ga）₅O₁₂:Ce³⁺黄绿色荧光粉以及CaAlSiN₃:Eu²⁺红色荧光粉,可以封装色温6 500 K、显色指数Ra达到96.5、所有特殊显色指数R1~R15都大于90的全光谱白光LED。通过封装老化测试,Mg²⁺和Ge⁴⁺离子掺杂的BaSi₂O₂N₂:Eu²⁺蓝绿色荧光粉较未掺杂的荧光粉老化性能提升近1倍。     

白光LED用YAG黄色荧光粉实用中发射光谱的测量方法

提出了一种YAG荧光粉在实用蓝光激发下发射光谱测量的新方法。通过采用高斯函数和费米函数拟合及模拟退火优化技术,得到了混合发光光谱的数学拟合函数,从而分离出荧光粉的发射光谱,进一步表征其发光性能。实验样品的测量结果表明,与简单的截切分离方法比较,具有不可忽略的光度量和色度量差异。量子效率、发光效率和能量效率等光度量的差异均高于1%,相关色温相差达几十K,色品坐标、主波长和色纯度等色品指标也产生差异,但半峰带宽变化不大,荧光发光的峰值波长则基本不受影响。实验结果表明,所建立方法能够提高实用条件下YAG黄色荧光粉发射光谱的测量准确性。     

传统白光LED与远程荧光粉白光LED的发光性能比较

研究了传统白光LED与蓝光激发的球冠形远程荧光粉白光LED在不同电流、不同热沉温度下的发光性能,并对其机理差异展开了探讨。实验结果表明：随热沉温度和驱动电流的上升,传统白光LED的量子效率和电光转换效率急剧下降,并导致其Y/B比（Yellow/Blue Ratio）下降,相关色温上升。而在远程荧光粉白光LED中,其量子效率、光转换效率和相关色温在相同实验条件下变化幅度都较小。由光强空间分布和Y/B比空间分布可知,远程荧光粉白光LED的光强分布呈类似蝠翼分布,且Y/B比空间均匀性远大于传统白光LED。     

Phosphor-converted light-emitting diode based on ZnO-based heterojunction

A phosphor-converted light-emitting diode (LED) was realized by coating BaMg₂Al₁₆O₂₇:Eu²⁺·Mn²⁺ and (SrCaPO₄)·B₂O₃:Eu²⁺·Na⁺ phosphors onto an n-ZnO/i-MgO/p-GaN heterojunction diode. Two emission bands at around 450 and 520 nm were observed in the phosphor-converted LED under the injection of continuous current. By analyzing the optical properties of the heterojunction diode and phosphors, it is concluded that the emission at 450 nm comes from (SrCaPO₄)·B₂O₃:Eu²⁺·Na⁺ phosphor, while the one at 520 nm comes from BaMg₂Al₁₆O₂₇:Eu²⁺·Mn²⁺ phosphor under the excitation of the light emitted from the n-ZnO/i-MgO/p-GaN heterojunction diode. The results reported in this paper may provide a route to ZnO-based phosphor-converted LEDs for future lighting or displaying purpose.     

Spectral Characteristics of White Organic Light-emitting Diodes Based on Novel Phosphorescent Sensitizer

采用新型贵金属铱的配合物bis(1,2-dipheny1-1H-benzoimida-zole)iridium (acetylacetonate)作为磷光敏化剂,与荧光染料4-(dicyanomethylene)-2-t-butyl-6-(1,1,7,7-tetramethyljulolidyl-9-en-yl)-4H-pyran共同掺杂到聚合物主体材料poly(N-vinylcarbazole)中,以N,N'-diphenyl-N,N'-bis(1-naphthyl) (1,1'-biphenyl)-4,4'-diami-ne作为蓝光发光层,制备了白色有机电致发光器件. 通过对掺杂体系的紫外-可见吸收光谱、光致发光光谱以及电致发光光谱的表征,分析了该磷光敏化体系的能量转移机制. 结果表明,在该聚合物磷光荧光双掺杂体系中,由于磷光与荧光材料之间的不完全的F?rster能量传递过程,导致电致发光光谱中同时存在磷光材料三线态到基态与荧光材料单线态到基态的辐射衰减发光. 该掺杂体系成功实现了白光发射,随着偏置电压的升高,器件的CIE色坐标有微小的红移,但都非常接近等能白光点,器件表现出了很好的色纯度.     

Electroluminescence of the p-ZnO:As/n-ZnO LEDs grown on ITO glass coated with GaAs interlayer

In this paper, we proposed a new p-type ZnO doping method with metal organic chemical vapor deposition (MOCVD) technology by inserting a GaAs interlayer between substrate and ZnO epitaxial layer. The doping concentration of p-type ZnO film is able to be controlled by adjusting the thickness of the GaAs interlayer. With this method, we fabricated n-ZnO/p-ZnO:As homojunction light-emitting diode (LED) on ITO-glass substrate pre-coated with 20 nm GaAs interlayer. The device exhibits a typical rectifying behavior by current-voltage (I-V) measurement. When the device is forward biased, UV-vis electroluminescence (EL) emissions can be observed clearly.     

Spectral characteristics of cascade master/slave/slave injection-locking of laser diodes

We have developed the master/slave/slave laser spectrometer in the blue-wavelength region. It comprises a master/slave laser combination coupled with a second-harmonic generation (SHG) enhancement cavity and a SHG-injected blue diode laser. The total power of 30 mW was obtained and the spectral characteristics and power were measured. Excluding the power of the satellite longitudinal mode of a slave/slave laser, the total power of 422.791 nm light which can be used for the magnetooptic trap for Ca was 25.5 mW.     

Studies in crystal structure and luminescence properties of Eu-doped metal tungstate phosphors for white LEDs

The correlation between the crystal structure and luminescent properties of Eu³⁺-doped metal tungstate phosphors for white LEDs was investigated. Red-emitting A_4−3x(WO₄)₂:Eu_x³⁺ (A=Li, Na, K) and B_(4−3x)/2(WO₄)₂:Eu_x³⁺ (B=Mg, Ca, Sr) phosphors were synthesized by solid-state reactions. The findings confirmed that these phosphors exhibited a strong absorption in the near UV to green range, due to the intra-configurational 4f-4f electron transition of Eu³⁺ ions. The high doping concentration of Eu³⁺ enhanced the absorption of near UV light and red emission without any detectable concentration quenching. Based on the results of a Rietveld refinement, it was attributed to the unique crystal structure. In the crystal structure of the Eu³⁺-doped metal tungstate phosphor, the critical energy transfer distance is larger than 5 Å so that exchange interactions between Eu³⁺ ions would occur with difficulty, even at a high doping concentration. The energy transfer between Eu³⁺ ions, which causes a decrease in red emission with increasing concentration of Eu³⁺, appears to be due to electric multi-polar interactions. In addition, the Eu-O distance in the host lattice affected the shape of emission spectrum by splitting of emission peak at the ⁵D₀→⁷F₂ transition of Eu³⁺.     

White light-emitting Mg0.1Sr1.9SiO4:Eu phosphors

Divalent europium-activated strontium orthosilicate Sr₂SiO₄:Eu²⁺ and Mg_0.1Sr_1.9SiO₄:Eu²⁺ phosphors were synthesized through the solid-state reaction technique. Their luminescent properties under ultraviolet excitation were investigated. The X-ray diffraction (XRD) results show that these phosphors are of α′-Sr₂SiO₄ phase with a trace of β-Sr₂SiO₄. Doping of Eu²⁺ ion into the crystal lattice results in the lattice constant being expended, while Mg²⁺ makes the lattice constant shrinking. A solid solution with the same crystal structure is formed when Eu²⁺ or Mg²⁺ substitutes part of Sr²⁺ ions and occupies the same lattice sites. The Sr₂SiO₄:Eu²⁺ phosphors show two emission spectra peaked at 535 and 473 nm originated from the 5d-4f transition of Eu²⁺ ion doped in two different Sr²⁺ sites in the host lattice. By substitution of 0.1 mol of Sr²⁺ with Mg²⁺, these two emission bands are tuned to be in the blue and yellow region (459 and 564 nm for Mg_0.1Sr_1.88SiO₄:Eu_0.02), respectively. The tuning effect is discussed. With a combination of the blue and yellow emission bands the phosphors show white color, indicating that these phosphors may become promising phosphor candidates for white light-emitting diodes (LEDs).     

基于冷暖白光LED的可调色温可调光照明光源

可调色温可调光光源是实现智能照明的基础。充分利用发光二极管(LED)光源的可控性,采用冷暖白光LED和两通道脉冲宽度调制(PWM)法,设计研制成功了可调色温可调光动态照明光源。从人们关心的照明光源参数出发,依据选用冷白LED光源和暖白LED光源光度色度参数,建立了给定光度量输出时冷白LED光源控制占空比计算的模型,探讨了基于色温目标控制参数占空比的约束条件。实验表明,混色光源调节色温时光通量的起伏小于2.5%,相关色温偏差在10K以内,调光时色温基本不变,设计结果良好;同时,在分析过程中实际设计混色光源参数和选择光源的性能指标参数一致,表明这种方法既直观又具有很好的实用性。     

LED用荧光粉Sr(S_(1-x)Se_x)∶Eu~(2 )的合成和光谱性质研究

采用高温固相法合成了Sr(S1-xSex)系列硫属化合物掺Eu2 荧光粉。XRD表明荧光粉的组成为单相,而且体系Sr(S1-xSex)∶0.005Eu2 中晶胞参数随着组成的变化呈现良好的线性关系,遵守韦加定律。漫反射光谱与激发光谱吻合,说明荧光粉吸收的能量能够有效地激发发光中心而发光,激发光谱中较低能量区域覆盖了400~500nm的光谱范围,与蓝光LED芯片的发射光匹配。发射光谱呈现的是Eu2 离子的5d→4f特征跃迁发射带,当x由0增加到1.0的过程中,发射峰值波长由617nm逐渐蓝移到571nm。不同基质中掺杂的Eu2 离子的荧光寿命均为微秒数量级,与Eu2 离子的4f65d1→4f7跃迁相符合。将荧光粉封装在发蓝色光(λ=460nm)的GaN芯片上制作了LED器件,测量了器件的发光强度、色纯度和色坐标等参数。Sr(S1-xSex)∶Eu2 系列硫属化合物掺铕荧光粉能够有效地被GaN芯片发出的蓝色光激发,发出从橙色到红色的可见光,是一类较好的LED用荧光粉。