阴极缓冲层对于不同惰性气氛气压退火处理的 P3HT∶PCBM光伏性能的影响

制备了基于聚(3-己基噻吩)(P3HT)与可溶性富勒烯衍生物(PCBM)共混体系的太阳能电池。通过改变活性层退火处理时惰性气氛环境的压强,在一定程度上实现对共混物相分离以及聚合物结晶度的控制,研究了LiF作为阴极缓冲层对不同压强下退火处理的器件性能的影响。实验发现,LiF层的关键作用在于稳定开路电压以及提升短路电流,从而带动转化效率整体提升。结果表明,LiF层可以改善器件活性层与金属电极接触的界面形态,而器件的最终性能则由活性层的微观形貌与电极界面形态共同决定。     

使用不同阴极缓冲层提升性能的反型有机太阳能电池

使用含Al_q3、Bphen、BCP、HATNA和Cs₂CO₃作为阴极缓冲层,制备了基于SubPc和C₆₀的反型平面异质结有机太阳能电池. 比较了有机阴极缓冲层的最低未占有分子轨道和电子迁移率对有机太阳能电池性能的影响. 结果显示,Al_q3、Bphen和HATNA能够大幅度提升器件的性能. 使用退火过后的HATNA作为阴极缓冲层获得了最高的效率,比没有阴极缓冲层的器件提升了7倍. 另外,使用空间电荷限制电流理论进行仿真的结果表明,通过加入HATNA作阴极缓冲层,反型有机太阳能电池结构中处于有机/电极界面处的肖特基势垒降低了27%.     

磁场对P3HT:PCBM活性层的薄膜形貌及光电性能的影响

以P3HT(Poly(3-Hexylthiophene))为电子给体,PCBM([6,6]-Phenyl C61Butyric Acid Methyl Ester)为电子受体,在活性层P3HT:PCBM的退火过程中,利用磁场对活性层有机分子的排列取向作用,制备了有机体异质结太阳能电池。研究结果表明:当磁场强度为0.9MA/m时,器件的短路电流密度从7.414A/cm2提高到8.332A/cm2,填充因子也相应地增加,但开路电压却有所降低,最高的光电转换效率为2.562%。由光致发光光谱和原子力显微图像可知,磁场对活性层的结晶度、内部分子排列和表面形貌都有明显的影响。     

利用Ag_2O/PEDOT:PSS复合缓冲层提高P3HT:PCBM聚合物太阳能电池器件性能的研究

利用Ag2O/PEDOT:PSS(聚(3,4-乙撑二氧噻吩):聚苯乙烯磺酸盐)作为复合阳极缓冲层,制备了P3HT:PCBM(聚(3-已基噻吩):富勒烯衍生物)聚合物太阳能电池器件,并通过改变氧化银插入层的厚度来分析复合缓冲层对器件性能的影响.实验发现,具有阳极缓冲层修饰的器件在退火处理后,光伏性能得到了改善.相比于单一PEDOT:PSS缓冲层的器件,Ag2O/PEDOT:PSS复合缓冲层可以增大器件的短路电流密度和外量子效率,使器件效率得到提高.分析表明,退火处理可以有效改善活性层的薄膜形貌,增加光的吸收和激子的解离,而较薄氧化银的引入,可以有效降低阳极处空穴的输运势垒,提高器件空穴收集效率,并能充当化学间隔层,提高器件光伏性能和稳定性.     

磁场对P3HT:PCBM活性层的薄膜形貌及光电性能的影响北大核心CSCD

以P3HT(Poly(3-Hexylthiophene))为电子给体,PCBM([6,6]-Phenyl C61Butyric Acid Methyl Ester)为电子受体,在活性层P3HT:PCBM的退火过程中,利用磁场对活性层有机分子的排列取向作用,制备了有机体异质结太阳能电池。研究结果表明:当磁场强度为0.9MA/m时,器件的短路电流密度从7.414A/cm2提高到8.332A/cm2,填充因子也相应地增加,但开路电压却有所降低,最高的光电转换效率为2.562%。由光致发光光谱和原子力显微图像可知,磁场对活性层的结晶度、内部分子排列和表面形貌都有明显的影响。     

复合阴极缓冲层Alq_3∶CsF对CuPc/C_(60)电池性能的影响

通过Alq_3∶CsF复合阴极缓冲层来优化CuPc/C_(60)有机小分子太阳能电池的性能。当Alq_3∶CsF厚度为5nm,CsF的掺杂比例为4%时,加入复合阴极缓冲层器件较Alq_3阴极缓冲层器件的能量转化效率提高了49%,到达0.76%,并且在室温、大气的条件下,器件的稳定性也得到了保持,与未加阴极缓冲层的器件相比,半衰期提高了6倍,达到9.8h。通过紫外-可见吸收、外量子效率和单载流子传输器件等研究了器件效率改善的主要原因是掺入CsF后,调节界面能级,改善了Alq_3的电子传输特性,提高了器件的短路电流和填充因子。比较分析复合阴极缓冲层器件于空气中放置不同的时间的电流电压曲线,表明Alq_3∶CsF可以保持Alq_3的良好稳定性,可以很好地阻挡氧气与水分的扩散,提高器件的寿命。     

Cs_2CO_3共蒸阴极对有机电致发光器件性能的影响(英文)

研究了碳酸铯(Cs2CO3)掺杂8-羟基喹啉铝(Alq3)作为电子注入层对有机电致发光器件性能的影响。结果表明,与常用的Cs2CO3超薄层作电子注入层相比,Cs2CO3∶Alq3共蒸阴极对器件效率和亮度有很大提高,器件电流效率从3.1 cd/A(Cs2CO31 nm/Al)提高到6.5 cd/A(Cs2CO33%∶Alq3/Al)。器件性能的提高归因于Cs2CO3∶Alq3共蒸阴极比单层Cs2CO3阴极具有更好的电子注入能力和电子传输性能。薄膜形貌表明,共蒸阴极能有效降低Alq3表面粗糙度,有助于提高器件发光性能及寿命。     

TFTTP作为阴极缓冲层提高有机薄膜太阳能电池的内建电场和载流子收集效率

采用一种新型的电子传输材料TFTTP作为阴极缓冲层提高基于SubPc/C₆₀异质结的有机薄膜太阳能电池的性能. 通过在有机活性层和金属电极之间加入TFTTP界面层,器件的能量转换效率提高了约30%. 系统研究了器件的二极管特性、光电流特性以及内部的光场分布情况,结果表明,TFTTP阴极缓冲层的引入可以有效地提高器件的内建电场,进而增加电荷转移激子的分离效率. 通过使用TFTTP作为阴极缓冲层,在C₆₀/金属界面形成良好的欧姆接触,降低了界面接触电阻,有利于自由载流子的收集.     

缓冲夹层影响异质结有机光伏器件性能研究

制备了结构为CuPc/缓冲层/C60异质结的有机光伏器件,分别选用三氧化钼和红荧烯为缓冲层,研究了增加缓冲层对器件性能的影响.结果表明,增加三氧化钼和红荧烯缓冲层后器件的开路电压和光电转换效率都得到提高,器件的短路电流密度和填充因子都有所降低.开路电压从没有缓冲层时的0.39V分别提高到0.58V、0.55V,转换效率从0.36%提高到0.44%,短路电流从1.92mA/cm2分别降低到1.77mA/cm2、1.81mA/cm2,填充因子从0.48分别减少到0.43、0.44.进一步研究表明器件的短路电流密度受缓冲层厚度的影响很大,当缓冲层厚度很小时,器件短路电流密度还有所增加,但随着缓冲层厚度的增加,短路电流密度逐渐减小,当缓冲层厚度为10nm时,器件短路电流密度减少到0.35mA/cm2.开路电压随着厚度的增加逐渐增加,从1nm时的0.43V增加10nm时0.63V.根据整数电荷转移模型和界面能级理论解释有机光伏器件开路电压提高以及短路电流密度减少的原因,为有机太阳能电池性能的改善提供了研究方法.     

缓冲层提高有机聚合物光伏电池性能研究

在分析有机聚合物复合体光伏电池机理及等效电路模型基础上,研究了界面旋涂缓冲层对聚合物给体/受体复合体结构光伏器件性能的影响.制备了基于P3HT/PCBM的给体 受体复合体薄膜有机光伏电池,并分别在有机活性层和ITO基底之间以及有机活性层和电极之间插入TFB和F8BT缓冲层.实验证明：在ITO和活性层之间旋涂TFB作为阳极缓冲层,可增加有机聚合物光伏器件的短路电流,在活性层和电极之间插入F8BT作为阴极缓冲层,可增大光伏器件的开路电压,提高器件的转换效率.     

基于聚多巴胺/氧化锌复合阴极缓冲层的倒置聚合物太阳能电池的研究

利用多巴胺氧化自聚合形成聚多巴胺(PDA)与ZnO结合形成PDA/ZnO复合阴极缓冲层,制备了以P3HT:PC_(61)BM为活性层的倒置结构聚合物太阳能电池,通过改变PDA的自聚合时间来分析复合阴极缓冲层对器件性能的影响.实验发现,随着PDA的自聚合时间的增加,聚合物太阳能电池的光电转换效率先增大后减小,当自聚合时间为10 min时,相应器件光伏性能达到最优值,其开路电压V_(OC)为0.66 V,短路电流密度J_(SC)为9.70 mA/cm~2,填充因子FF为68.06%,光电转换效率PCE为4.35%.器件性能改善的原因是由于PDA/ZnO复合阴极缓冲层减小了ZnO与ITO之间的接触电阻,同时PDA中存在大量的氨基有利于倒置太阳能电池阴极对电子的收集.     

利用阴极修饰层提高有机光伏电池的性能及稳定性

分别制备了以苯甲酸锂、碳酸铯和聚氧化乙烯为阴极修饰层的基于P3HT∶PCBM体系的本体异质结有机光伏电池。比较了3种阴极修饰层对器件性能及稳定性的影响。结果表明:选择合适的阴极修饰层材料是提高光电转换效率、延长电池使用寿命的可行性途径之一。纯无机阴极修饰层不能有效地阻挡氧气和水进入活性层,对于减缓器件的性能衰退效果不如有机阴极修饰层材料。有机聚合物材料可以减小漏电流的产生,开路电压和填充因子都得到很大提高,有利于提高器件的性能及稳定性。合成可溶液加工的具有极性基团的共轭聚合物材料是未来阴极修饰层的发展方向。     

氯化铯甲醇溶液对有机聚合物太阳能电池的影响

研究了氯化铯的甲醇溶液作为阴极修饰层,来提高传统有机聚合物太阳能电池器件性能。通过电容-电压(C-V)测试分析了铝电极和PTB7/PC_(70)BM之间的界面电荷积累情况,同时测试了紫外光电子能谱(UPS),对铝的功函数改变作了研究。结果表明,采用氯化铯的甲醇溶液作阴极修饰层的器件,其短路电流(J_(sc))、开路电压(V_(oc))、填充因子(FF)都有所提高,光电转化效率达到6.36%,与仅用甲醇处理过的器件相比,光电转化效率提高了11%;与未经甲醇处理的器件相比,光电转化效率提高了42.6%。这种一步溶液处理法能够减少电荷积累,同时降低铝电极的功函数,利于电子收集,进而提高器件性能。     

Performance improvement of MEH-PPV:PCBM solar cells using bathocuproine and bathophenanthroline as the buffer layers

In this work, bathocuproine (BCP) and bathophenanthroline (Bphen), commonly used in small-molecule organic solar cells (OSCs), are adopted as the buffer layers to improve the performance of the polymer solar cells (PSCs) based on poly(2-methoxy-5-(2-ethylhexyloxy)-1,4-phenylenevinylene) (MEH-PPV): [6,6]-phenyl-C61-butyric acid methyl ester (PCBM) bulk heterojunction. By inserting BCP or Bphen between the active layer and the top cathode, all the performance parameters are dramatically improved. The power conversion efficiency is increased by about 70% and 120% with 5-nm BCP and 12-nm Bphen layers, respectively, when compared with that of the devices without any buffer layer. The performance enhancement is attributed to BCP or Bphen (i) increasing the optical field, and hence the absorption in the active layer, (ii) effectively blocking the excitons generated in MEH-PPV from quenching at organic/aluminum (Al) interface due to the large band-gap of BCP or Bphen, which results in a significant reduction in series resistance (Rs), and (iii) preventing damage to the active layer during the metal deposition. Compared with the traditional device using LiF as the buffer layer, the BCP-based devices show a comparable efficiency, while the Bphen-based devices show a much larger efficiency. This is due to the higher electron mobility in Bphen than that in BCP, which facilitates the electron transport and extraction through the buffer layer to the cathode.     

Improved performance of polymer solar cells by using inorganic,organic, and doped cathode buffer layers

The interface between the active layer and the electrode is one of the most critical factors that could affect the device performance of polymer solar cells. In this work, based on the typical poly(3-hexylthiophene):[6,6]-phenyl C61-butyric acid methyl ester(P3HT:PCBM) polymer solar cell, we studied the effect of the cathode buffer layer(CBL) between the top metal electrode and the active layer on the device performance. Several inorganic and organic materials commonly used as the electron injection layer in an organic light-emitting diode(OLED) were employed as the CBL in the P3HT:PCBM polymer solar cells. Our results demonstrate that the inorganic and organic materials like Cs_2CO_3, bathophenanthroline(Bphen), and 8-hydroxyquinolatolithium(Liq) can be used as CBL to efficiently improve the device performance of the P3HT:PCBM polymer solar cells. The P3HT:PCBM devices employed various CBLs possess power conversion efficiencies(PCEs) of 3.0%–3.3%, which are ca. 50% improved compared to that of the device without CBL. Furthermore, by using the doped organic materials Bphen:Cs_2CO_3 and Bphen:Liq as the CBL, the PCE of the P3HT:PCBM device will be further improved to 3.5%, which is ca. 70% higher than that of the device without a CBL and ca. 10% increased compared with that of the devices with a neat inorganic or organic CBL.     

An improved design approach for thin film solar cells

In this paper an improved design for thin film solar cells is proposed to enhance conversion efficiency. This proposed structure includes two pairs of additional contact to the reversed bias of absorber and buffer layers, directly. The purpose of additional electrodes is to control the carrier distribution in the active region of device. This idea has been implemented on the fabricated Copper indium gallium selenide solar cell with the record efficiency of 22%. The simulations show an improvement of 2% in the conversion efficiency is obtained by direct application of reverse biasing on the absorber and buffer layer. The increase of short circuit current more than 3 mA/cm² is responsible for the improved performance. The open circuit voltage and fill factor of cell can also be increased by the controlling reverse bias.     

PTCDI-C8作为阴极修饰层提高钙钛矿太阳能电池的性能

采用N,N'-二正辛烷基-3,4,9,10-苝四甲酰二亚胺（PTCDI-C₈）对钙钛矿电池电子传输层（PCBM）进行界面修饰以减少PCBM与Al电极之间的漏电流,提高阴极的电子收集效率。通过调节PTCDI-C₈薄膜的厚度优化界面接触和电子传输性能。实验结果表明：当PTCDI-C₈薄膜的厚度为20 nm时得到的器件性能最优。光电转换效率（PCE）由5.26%提高到了8.65%,开路电压（V_oc）为0.92 V,短路电流（J_sc）为15.68 mA/cm²,填充因子（FF）为60%。PTCDI-C₈能够有效阻挡空穴向阴极传输,同时PTCDI-C₈具有较高的电子迁移率以及较高的稳定性,在增加电子传输的同时,可减少环境对PCBM的侵蚀,提高了器件的稳定性。     

Enhanced performance of the OLED with plasma treated ITO and plasma polymerized thiophene buffer layer

In this work, indium-tin-oxide (ITO) electrode in organic light emitting device (OLED) was modified by using an O₂ plasma treatment and plasma polymerized thiophene buffer layers were inserted between ITO (anode) and organic layer in order to improve the hole injection efficiency. Furthermore, electron injection to cathode (Al) in the test OLED seemed to be improved due to introduction of quantum well in the cathode. The plasma-polymerized thiophene buffer layer on the O₂ plasma-treated transparent ITO electrode seemed to result in formation of a stable interface and consequently, reduction the hole mobility, which in turn caused enhanced recombination of hole and electron in the emitting layer. Compared with the test device without buffer layer, the turn-on voltage of the test device with the buffer layer was lowered by 1.0 V.