Deep‐red photoluminescence and long persistent luminescence in double perovstkite‐type La2MgGeO6:Mn4+

A novel non‐rare‐earth doped phosphor La₂MgGeO₆:Mn⁴⁺ (LMG:Mn⁴⁺) with near‐infrared (NIR) long persistent luminescence (LPL) was successfully synthesized by solid‐state reaction. The phosphors can be effectively excited using ultraviolet light, followed by a sharp deep‐red emission peaking at 708 nm, which is originated from ²E_g → ⁴A_2g transition of Mn⁴⁺ ions. The luminescent performance was analyzed by photoluminescence (PL) and photoluminescence excitation (PLE) spectra. The crystal field parameters were calculated to describe the environment of Mn⁴⁺ in LMG host. The LPL behaviors as well as the mechanisms were systematically discussed. This study suggests that the phosphors will broaden new horizons in designing and fabricating novel NIR long phosphorescent materials.     

Near‐Infrared Broadband Photoluminescence of Bismuth‐Doped Zeolite‐Derived Silica Glass Prepared by SPS

Through the order–disorder transition process of zeolites, bismuth‐doped zeolite‐derived silica glasses with broadband near‐infrared (NIR) photoluminescence have been successfully prepared by spark plasma sintering (SPS). The samples were characterized by X‐ray diffraction, UV‐vis, photoluminescence, and fluorescence lifetime. The results showed that as‐prepared samples possessed favorable broadband NIR luminescence. The NIR emission (peaked at ~1140 nm) intensity decreased with increasing the bismuth doping concentration when excited by 500 and 700 nm. The tendency was different from the emissions (peaked at ~1240 nm) excited by 800 nm. In addition, the NIR fluorescence peaks of the fixed Bi concentration sample can be observed almost around 1140 or 1240 nm when excited by different wavelengths from 500 to 950 nm. These phenomena implied that the NIR emission peaked at different wavelengths may originate from different bismuth species. Three kinds of Bi active centers Bi⁺, Bi⁰, and (Bi₂)^2? were proposed to contribute to the NIR emission peaks at ~1140, 1240, and 1440 nm, respectively. Interestingly, a broadband NIR emission peaked at 1207 nm with a full‐width at half maximum of 273 nm was observed when excited by 600 nm, whose intensity was stronger than that excited by 800 nm. This property might be useful for broadband fiber amplifiers and tunable lasers.     

Single phase multi color emitting Ca2LuTaO6: Dy3+/Eu3+ double perovskite oxide phosphors

The trivalent rare-earth (RE³⁺) doped phosphors show tremendous achievement in narrow band multicolor line emission for various applications. However, the 4f–4f absorption transition of these ions is forbidden in UV and blue light excitation. Usually, a sensitizer having spin allowed transition was used as a co-dopant to excite these ions via the energy transfer phenomenon. Another approach promisingly using to excite these ions by efficient energy transfer from the intrinsic emission of the Ca₂LuTaO₆ double perovskite phosphors host lattice. Phosphors of Ca₂LuTaO₆ with double perovskite structure were synthesized by using a high-temperature solid-state reaction method. The produced Ca₂LuTaO₆ double perovskite phosphors show an intrinsic broad band emission centered at 424 nm under the excitation of 313 nm UV light. The origin of this broad band blue emission was deeply investigated by using computation and experimental approaches. The trivalent activator Dy³⁺ and Eu³⁺ were doped is a single and co-dopant in the produced Ca₂LuTaO₆ phosphors to check their excitation in UV and near-UV spectral region. X-ray diffraction and scanning electron microscopy were used to investigate the structure and phase analysis. Various characterizations such as photoluminescence excitation, emission, and CIE chromaticity coordinates were measured which illustrate the potential of Dy³⁺ and Eu³⁺ activated Ca₂LuTaO₆ double perovskite phosphors for narrow band multicolor line emission for various applications.     

Broadband deep-red-to-near-infrared emission from Mn2+ in strong crystal-field of nitride MgAlSiN3

Broadband near-infrared (NIR) phosphors have received increasing attention for fabricating phosphor-converted light-emitting diodes (pc-LEDs) as NIR light source. Most of the reported broadband NIR phosphors originate from Cr³⁺ in weak crystal field environments. Herein, we report a luminescent material, MgAlSiN₃:Mn²⁺ with CaAlSiN₃-type structure, demonstrating that broadband deep-red-to-NIR emission can be achieved via doping Mn²⁺ into crystallographic sites with strong crystal field in inorganic solids. This phosphor is synthesized via easy-handle solid-state reaction, and the optimized sample, (Mg_0.93Mn_0.07) AlSiN₃ shows an emission band with peak at ~754 nm, FWHM of 150 nm, and internal quantum efficiency of 70.1%. The photoluminescence intensity can further be enhanced by co-doping Eu²⁺ as sensitizer. This work provides a new strategy for discovering new broadband NIR phosphors using Mn²⁺ in strong crystal field as luminescence center.     

Broadband near-infrared double-perovskite phosphor Sr2ScTaO6:Cr3+, Yb3+ for NIR pc-LED applications

The broadband near-infrared (NIR) phosphor converted light emitting diode (NIR pc-LED) has garnered unprecedented attention due to its crucial role in NIR applications. However, there remains a scarcity of efficient broadband NIR luminescence materials capable of emitting NIR light with wavelengths greater than 800 nm. This study reports the synthesis, crystal structure and photoluminescence (PL) properties for double perovskite Sr₂ScTaO₆:Cr³⁺ phosphors which exhibit a broadband NIR emission in the 650–1250 nm range, peaking at∼815 nm with the full width at half maximum (FWHM) of 161 nm. The observed broadband emission arises from two distinct Cr³⁺ centers, namely Sc³⁺ and Ta⁵⁺ octahedral sites within the Sr₂ScTaO₆ structure, as demonstrated by luminescence and decay kinetic analysis. A significant enhancement of the thermal stability and a remarkable broadening of the FWHM (from 161 to 275 nm) are achieved by employing Yb³⁺ co-doping strategy. The efficient energy transfer from Cr³⁺ to Yb³⁺ was confirmed through emission and excitation spectra, as well as luminescence decay measurements. Finally, Sr₂ScTaO₆:Cr³⁺-Yb³⁺ phosphor was integrated with a 470 nm blue LED chip to fabricate a NIR pc-LED device, and its potential application in night vision was evaluated.     

Preparation and luminescent modulation of KGaSiO4:Eu3+ phosphors using for multiple anti-counterfeiting

Anti-counterfeiting technology is of great significance to information security. To obtain high-quality anti-counterfeiting materials, the developments of inorganic materials are crucial. In this paper, a series KGaSiO₄:xEu³⁺ phosphors with persistent luminescence, photoluminescence, and thermochromic have been successfully prepared and the application of quadruple anti-counterfeiting is realized. The X-ray diffraction and Rietveld refinement indicate that the phosphors are pure phase. With Eu³⁺ ions doping, the structure change, site occupancies, and color-tunable phenomenon are carefully investigated. Different from another Eu³⁺ doping phosphor, the emission of KGaSiO₄:0.2% Eu³⁺ phosphor changes with the excitation light in the region of 240 nm–306 nm. The emission color can be modulated with the surrounding temperature. Surprisingly, this phosphor can emit green afterglow light, which is attributed to the different luminescent properties of the matrix and doping of Eu³⁺ ions. The series of phosphors exhibit abundant luminescent properties. Based on their wavelength dependence, concentration quenching, long afterglow, and thermochromic properties, the KGaSiO₄:xEu³⁺ phosphors can be effective materials for quadruple-modal anti-counterfeiting devices.     

Defect cluster engineering in ZnGa2−x(Mg/Ge)xO4:Cr3+ nanoparticles for remarkably improved NIR persistent luminescence

Recently, study on Cr³⁺-doped zinc gallate and zinc gallogermanate persistent phosphors has become a hot topic in persistent luminescence and bio imaging areas, because of their near infrared (NIR) emission and long afterglow. However, regulation of efficient traps and improvement of persistent luminescence through bottom-up design are the key challenge. Here, we recommend a new paradigm of chemical unit co-substitution with [Mg²⁺-Ge⁴⁺] substituting for [Ga³⁺-Ga³⁺] in ZnGa₂O₄, which contributes to the opposite charged and distorted octahedral defects of Mg_Ga′ and Ge_Ga ^· in pair around the Cr_N2 ions. The formed defect clusters of Mg_Ga′-Cr_N2-Ge_Ga ^· , which are closely related to the trap depth, can be accurately regulated through varying the doping content of Mg²⁺/Ge⁴⁺ in the resulting spinel solid solutions of ZnGa_2−x(Mg/Ge)_xO₄:Cr³⁺ (x = 0–1.25). Moreover, the defect clusters cannot only store and recharge visible and UV radiations that contributes to the long lasting NIR persistent luminescence but also can enhance the NIR emission intensity at ~695 nm. The persistent luminescence induced by UV light excitation exhibits an improvement at a deeper trap depth, but it follows an opposite law through visible light excitation. The prepared nanoparticles have the advantages of intense NIR emission, long lasting afterglow, and excellent rechargeability for visible/UV radiations, so they are the potential nanoprobes for long-term bio imaging in living animals.     

Ultrawide near-infrared SrHfO3:Cr3+ phosphor with dual emission bands

Near-infrared phosphor-converted light-emitting diodes (NIR-pc-LEDs) are superior to traditional NIR-LEDs in spectral modulation, volume, and cost, and their optoelectronic properties are dominantly controlled by the NIR phosphors, which thus boosts the search for high efficiency and broadband NIR phosphors. In this work, we attempt to realize ultra-broadband NIR phosphors by doping Cr³⁺ in self-emitting SrHfO₃ with a weak crystal field. Dual emission bands centered at 770 (host) and 1000 nm (Cr³⁺) are observed, leading to a wide spectral range of 700–1400 nm. The Cr³⁺ ions enter the HfO₆ octahedron and thus produce an NIR emission with a full width at half maximum of 190 nm and an internal quantum efficiency of 24% under 460 nm excitation. A prototype NIR-pc-LED surface light is demonstrated for machine vision by using NIR-pc-LEDs that combine the blue LED with SrHfO₃:Cr. The work paves an avenue for designing super-broadband NIR phosphors by doping Cr³⁺ or other ions into hosts with self-trapped exciton emission (e.g., halide perovskites).     

Preparation and photoluminescence properties with the site‐selected excitations of Bi3+‐activated Ba3Sc4O9 phosphors

A series of novel Bi³⁺‐doped Ba₃Sc₄O₉ phosphors were synthesized through the solid‐state reaction. Their photoluminescence, decay curves, and thermal quenching properties were investigated in detail. The Ba₃Sc₄O₉:Bi³⁺ phosphors could be efficiently excited in the ultraviolet and near‐ultraviolet region (300‐400 nm), and the photoluminescence properties possess an obvious site‐selected excitations phenomenon. When excited at the ultraviolet light (320‐360 nm), the phosphors present a green or a bluish green emission, and when excited at the near‐ultraviolet light (370‐390 nm), the phosphors always show a yellow emission. The emission spectra excited at the different wavelength can be decomposed into four components, which accord with the four cationic sites in the structure of Ba₃Sc₄O₉. The influence of the Bi³⁺ concentration on the photoluminescence properties is also investigated. Upon excitation at 330 and 377 nm, the Ba₃Sc₄O₉:Bi³⁺ both have good thermal quenching properties; their emission intensity of the peak at 150°C both exceed 60% of the initial value. The above results indicate that the Ba₃Sc₄O₉:Bi³⁺ phosphor is a promising candidate to provide green or yellow components for UV or near‐UV LEDs.     

Eu2+ activated NaBa3Si2O7F: A new efficient blue-emitting luminescent material for solid-state lighting and display

Exploring novel efficient phosphors for lighting and display has always been an important and meaningful work for researchers. Herein, a novel efficient blue-emitting phosphor, Eu²⁺ doped barium-containing silicate fluoride NaBa₃Si₂O₇F, was prepared by solid-state method. The phosphor can produce bright blue light peaked at 452 nm with full-width at half-maximum about 57 nm under near-UV light excitation, and it exhibits a high internal quantum yield about 76.23%. The temperature-dependent photoluminescence spectra show that this phosphor owns good thermal stability, and the emission intensity at 425 K is 67% of that at room temperature. The outstanding data of fabricated device demonstrate that the blue phosphor has large possibility of practical application for white light-emitting diode. Furthermore, the phosphor also possesses good cathodoluminescence properties under various accelerating voltage with different probe currents, indicating its potential application in field emission displays.     

Red-shift and improved afterglow of Sr3Al2-xBxO5Cl2:Eu2+, Dy3+ phosphors via a cation substitution strategy

Sr₃Al_2-xB_xO₅Cl₂:Eu²⁺, Dy³⁺ (x = 0, 0.2, 0.4) long persistent phosphors were prepared via solid-state process. The pristine Sr₃Al₂O₅Cl₂:Eu²⁺, Dy³⁺ phosphor exhibits orange/red broad band emission around 609 nm, which can be attributed to the electric radiation transitions 4f⁶5 d¹→4f⁷ of Eu²⁺. Upon the same excitation, the B³⁺-doped Sr₃Al_2-xB_xO₅Cl₂:Eu²⁺, Dy³⁺ phosphors display red-shift from 609 nm to 625 nm with increasing B³⁺ concentrations. The XRD patterns show that Al³⁺ can be replaced by B³⁺ in the host lattice at the tetrahedral site, which causes lattice contraction and crystal field enhancement, and thereafter achieves the red-shift on the emission spectrum. The XPS investigation provides direct evidence of the dominant 2-valent europium in the phosphor, which can be ascribed for the broad band emission of the prepared phosphors. The afterglow of all phosphors show standard double exponential decay behavior, and the afterglow of Sr₃Al₂O₅Cl₂:Eu²⁺, Dy³⁺is rather weak, while the sample co-doped with B³⁺shows longer and stronger afterglow, as confirmed after the curve simulation. The analysis of thermally stimulated luminescence showed that, when B³⁺ is introduced, a much deeper trap is created, and the density of the electron trap is also significantly increased. As a result, B³⁺ ions caused redshift and enhanced afterglow for the Sr₃Al_2-xB_xO₅Cl₂:Eu²⁺, Dy³⁺ phosphor.     

Synthesis,structural characterization,and photoluminescence properties of Eu3+‐doped Mg3‐xEux(BO3)2 phosphor

Eu³⁺‐doped Mg_3‐xEu_x(BO₃)₂ (x = 0.000, 0.005, 0.010, 0.020, 0.050, and 0.100) phosphors were synthesized for the first time by solution combustion synthesis method, which is a fast synthesis method for obtaining nano‐sized borate powders. The optimization of the synthesis conditions of phosphor materials was performed by TG/DTA method. These phosphors were characterized by XRD, FTIR, SEM‐EDX, and photoluminescence, PL analysis. The XRD analysis exhibited that all of the prepared ceramic compounds have been crystallized in orthorhombic structure with space group Pnnm. Also, the influence of europium dopant ions on unit cell parameters of host material was analyzed using Jana2006 program and the crystalline size was determined by Debye‐Scherrer's formula. The luminescence properties of all Eu³⁺‐doped samples were investigated by excitation and emission spectra. The excitation spectra of Mg_3‐xEu_x(BO₃)₂ phosphors show characteristic peak at 420 nm in addition to other characteristic peaks of Eu³⁺ under emission at 613 nm. The emission spectra of Eu³⁺‐doped samples indicated most intensive red emission band dominated at 630 nm belonging to ⁵D₀→⁷F₂ magnetic dipole transition. Furthermore, the optimum or quenching concentration of Eu³⁺ ion has been determined as x = 0.010 showed the maximum emission intensity when it was excited at 394 nm.     

Synthesis and photoluminescence properties of the high-brightness Eu3+-doped Sr3Y(PO4)3 red phosphors

A series of red-emitting phosphors Eu³⁺-doped Sr₃Y(PO₄)₃ have been successfully synthesized by conventional solid-state reaction, and its photoluminescence properties have been investigated. The excitation spectra reveal strong excitation bands at 392 nm, which match well with the popular emissions from near-UV light-emitting diode chips. The emission spectra of Sr₃Y(PO₄)₃:Eu³⁺ phosphors exhibit peaks associated with the ⁵D₀ → ⁷F_J (J = 0, 1, 2, 3, 4) transitions of Eu³⁺ and have dominating emission peak at 612 nm under 392 nm excitation. The integral intensity of the emission spectra of Sr₃Y_0.94(PO₄)₃:0.06Eu³⁺ phosphors excited at 392 nm is about 3.4 times higher than that of Y₂O₃:Eu³⁺ commercial red phosphor. The Commission Internationale de l’Eclairage chromaticity coordinates, the quantum efficiencies and decay times of the phosphors excited under 392 nm are also investigated. The experimental results indicate that the Eu³⁺-doped Sr₃Y(PO₄)₃ phosphors are promising red-emitting phosphors pumped by near-UV light.     

Local charge regulation by doping Li+ in BaGa2O4:Bi3+ to generate multimode luminescence for advanced optical Morse code

In the field of advanced anti-counterfeiting research, it is a hot issue to develop a multimodal anti-counterfeiting material with adjustable luminescence characteristics. Here, persistent luminescent materials of BaGa₂O₄:xBi³⁺ (x = 0-0.02) and BaGa₂O₄:0.005Bi³⁺,yLi⁺ (y = 0.001–0.02) were synthesized by a solid state reaction at high temperature. BaGa₂O₄: Bi³⁺ exhibited a broad blue emission at ～470 nm (transition from [GaO₄]) and a sharp NIR emission at ～710 nm (³P₁→¹S₀ transition of Bi³⁺), upon UV excitation at 250 nm. Incorporation of Li⁺ in BGO: 0.005Bi³⁺ induced the emission color shifting from blue to green. After stoppage of UV excitation, the BGO:0.005Bi³⁺ exhibited white afterglow with emission peaks at the range of 500–700 nm. However, incorporation of Li⁺ leaded to a stronger green afterglow and a weaker NIR afterglow. When the afterglow disappeared, the sample outputted afterglow again after heating processing. The prepared samples exhibited time- and temperature-dependent multimode luminescence, so they were used as components, combined with Morse code to realize multi-modal dynamic anti-counterfeiting. The outcomes in this work indicate that the prepared luminescent materials have broad prospects in advanced anti-counterfeit applications.     

A building-block strategy for dynamic anti-counterfeiting by using (Ba,Sr)Ga2O4:Sm3+ new red persistent luminescent phosphor as an important component

Long persistent luminescence materials developed to commercial standards are primarily concentrated in the blue and green regions, with only a few in the red region. Red, as one of the three basic colors, can be mixed in various proportions with blue and green to yield various colors. The development of red persistent phosphors has a broader application potential but remains a challenge. A solid-state reaction method was used to synthesize new red persistent luminescent materials of Ba_1-xSr_xGa₂O₄:Sm³⁺ (x = 0–0.09). In BaGa₂O₄, both Sr²⁺ and Sm³⁺ preferentially occupy the Ba²⁺ site rather than the Ga³⁺ site. When exposed to UV light at 254 nm, the phosphors emit the characteristic red emission of Sm³⁺ at wavelengths ranging from 500 nm to 750 nm. After removing the UV light source, an intense red afterglow that lasted more than 1400 s was observed. The red afterglow signal reappears after a heating process. Doping Sr²⁺ reduces the trap depth and improves the red persistent luminescence significantly. Because the escaped electrons from traps compensate for the emission loss of Sm³⁺ during the heating process, the red phosphors have unimaginably luminescent thermal stability. Thus, the emission intensity at 200 ^°C is 1.6 times that at room temperature. The prepared red persistent phosphors show multimode luminescence, with the output signal being time and temperature sensitive, indicating that they are potential luminescent materials for anti-counterfeiting applications. Finally, a building-block strategy for advanced anti-counterfeiting applications of dynamic display information is proposed, with red persistent phosphors serving as an important component combined with upconversion phosphors of NaYF₄:Yb³⁺, Tm³⁺, and green persistent phosphors of SrAl₂O₄:Eu²⁺, Dy³⁺.     

Triple NIR light excited up-conversion luminescence in lanthanide-doped BaTiO3 phosphors for anti-counterfeiting

Up-conversion luminescent (UCL) materials are excellent candidate for optical anti-counterfeiting and the exploitation of multi-wavelength NIR light triggered UC phosphors with tunable color emission is essential for reliable anti-counterfeiting technology. Herein, a series of lanthanide ions (Er³⁺, Er³⁺–Ho³⁺, and Yb³⁺–Tm³⁺) doped BaTiO₃ submicrometer particles are synthesized through a modified hydrothermal procedure. XRD and SEM measurements were carried out to identify the structure and morphology of the samples and their UCL properties under 808, 980, and 1550 nm NIR excitation are investigated. Er³⁺ singly doped sample exhibits Er³⁺ concentration-dependent and excitation wavelength-dependent emission color from green to yellow and orange. The corresponding UC mechanisms under three NIR light excitation are clarified. Pure red emission under 1550-nm excitation was obtained by introducing small amount of Ho³⁺ and the fluorescent lifetime test was used to confirm the energy transfer from Er³⁺ to Ho³⁺. In addition, Yb³⁺–Tm³⁺ co-doped sample shows intense blue emission from ¹G₄ → ³H₆ transition of Tm³⁺ under 980-nm excitation. As a proof of concept, the designed pattern using phosphors with red, green, and blue three primary color emissions under 1550, 808, and 980 nm NIR excitation was displayed to demonstrate their anti-counterfeiting application.     

Dopant and compositional modulation triggered long-wavelength ultra-broadband and tunable NIR emission in MgO: Cr3+ phosphor for NIR spectroscopy applications

Efficient ultra-broadband near-infrared (NIR) phosphors with long-wavelength (λ_max > 850 nm) and wide full width at half-maximum (FWHM, >200 nm) have sparked tremendous interest, demonstrating their immense potential in NIR spectroscopy technology. Nevertheless, the development of NIR spectroscopy technology suffers from the restricted capability to efficiently emit the ultra-broadband NIR light. Herein, the synergetic enhancement strategy of heterogeneous substitution and compositional modulation was applied to create a novel Cr³⁺ doped long-wavelength ultra-broadband MgO: Cr³⁺, Ga³⁺ phosphor, which exhibited a long-wavelength ultra-broadband NIR emission (λ_max = 850 nm) covering the range of 650–1300 nm on the electromagnetic spectrum with the FWHM of more than 200 nm under the excitation of 468 nm light. Furthermore, the tunable NIR emission from 818 nm to 862 nm with an optimized quantum efficiency of 30% was accomplished by the Ga³⁺ ions substitution and Cr³⁺ ions modulation. The phosphor exhibited remarkable thermal stability up to 100 °C, remaining 83% of the integrated emission intensity at room temperature. A prototype of the NIR phosphor-converted LED (pc-LED) demonstrated that the novel MgO: Cr³⁺, Ga³⁺ phosphor possessed a relatively strong NIR output power (15.05 mW at 100 mA driven current) with a photoelectric conversion efficiency of 5.53%, which is impressive compared with other Cr³⁺-doped long-wavelength ultra-broadband phosphors. This work not only proposes a novel long-wavelength ultra-broadband NIR phosphors with industrialization and great application prospect in night vision but highlights a synergetic enhancement strategy to effectively boost the performance of long-wavelength ultra-broadband NIR pc-LED light sources.     

Energy transfer and color-tunable emission in Ba2Y2Si4O13:Bi3+,Eu3+ phosphors

Single-composition Ba₂Y₂Si₄O₁₃:Bi³⁺,Eu³⁺ (BYSO:Bi³⁺,Eu³⁺) phosphors with color-tunable and white emission were prepared by conventional high temperature solid-state reaction method. The structural and luminescent properties of these phosphors were thoroughly investigated through X-ray diffraction, photoluminescence, and decay curves. BYSO:Bi³⁺ phosphors show two excitation peaks at 342 and 373 nm, and give two emission peaks at 414 and 503 nm, respectively, indicating that there are two sites of Bi³⁺ in BYSO. The energy transfer from Bi³⁺ to Eu³⁺ was investigated in detail. Varied hues from blue (chromaticity coordinate [0.219, 0.350]) to white (0.288, 0.350) and orange-red light (0.644, 0.341) can be generated by adjusting the content of Eu³⁺. Pure white light emission (0.311, 0.338) can be obtained under the excitation of 355 nm in BYSO:3%Bi³⁺,20%Eu³⁺ phosphor. Besides, BYSO:Bi³⁺,Eu³⁺ phosphors exhibit distinct thermal quenching properties, whose emission intensity at 473 K is 82.6% of that at 298 K. Our results indicate that BYSO:Bi³⁺,Eu³⁺ may be applied as conversion phosphors for n-UV-based W-LEDs.     

Orange-red persistent luminescence in Mn2+-Doped Sr3Y2Ge3O12 films for dynamic anti-counterfeiting

The research focus in the field of anti-counterfeiting has shifted toward the secure luminescent label technology, which has gained prominence. The exceptional luminescence properties of persistent luminescence materials are important in the achievement of effective anti-counterfeiting measures. It is in this context that Sr₃Y₂Ge₃O₁₂ can serve as an excellent matrix material. In this study, it is found that Sr₃Y₂Ge₃O₁₂: 4.00% Mn²⁺ exhibits a luminescence intensity, persistence time, and stability that meet the practical requirements for applications. It is shown that the fabricated persistent luminescence film can be used in anti-counterfeiting applications, thereby, demonstrating the possibility to broaden the application scope of persistent luminescence materials. An emission band centered at 634 nm and a high-energy inflection point at 578 nm are observed in the samples excited at 260 nm. Fluorescence emission at 634 nm is also achieved through X-ray excitation. Through thermoluminescence, photoluminescence, and phosphorescence spectroscopy, a comprehensive investigation of the trap characteristics and inherent mechanisms of the long persistent phosphorescence has been conducted. The novel orange-red Sr₃Y₂Ge₃O₁₂: Mn²⁺ phosphor is extensively examined.     

Improved thermal stability of the near-infrared Al-modulated Zn3Ga2GeO8: Cr3+ phosphors for plant growth applications

The exploration of the high thermal stability near-infrared (NIR) phosphors is significantly crucial for the development of plant lighting. However, NIR phosphors suffer from the poor chemical and thermal stability, which severely limits their long-term operation. Here, the successful improvement of luminous intensity (149.5%) and thermal stability at 423 K of Zn₃Ga₂GeO₈ (ZGGO): Cr³⁺ phosphors is achieved for the introduction of Al³⁺ ions into the host. The release of carriers in deep traps inhibits the emission loss for the thermal disturbance. Furthermore, an NIR light emitting diodes (LEDs) lamp is explored by combining the optimized Zn₃Ga_1.1675Al_0.8GeO₈: 0.0325Cr³⁺ phosphors with a commercial 460 nm blue chip, and the emission band can match well with the absorption bands of photosynthetic pigments and the phytochrome (P_R and P_FR) of plants. The explored LEDs lamp further determines the growth and the pheromone content of the involved plants for the participation of the NIR emission originated from Cr³⁺ ions. Our work provides a promising NIR lamp as plant light with improved thermal stability for long-term operation.