类金刚石薄膜的电子结构及光学性质

以直流磁控溅射制备了类金刚石薄膜,采用原子力显微镜(AFM)观察薄膜的表面形貌,采用俄歇电子能谱(AES)分析薄膜的化学键和电子结构。将参数D定义为俄歇电子能谱(AES)中最大正峰和最低负峰之间的距离,用俄歇电子能谱中的D值求得不同沉积气压条件下制备的薄膜的sp2键的百分含量和sp2键与sp3键比率。采用紫外可见光透射光谱(UV-Vis)分析了薄膜的光吸收特性和光学带隙。结果表明:沉积气压低于0.8 Pa时,sp2键的百分含量随沉积气压的增大而减小;薄膜的光学性质受光学带隙的直接影响。     

射频磁控溅射沉积氮化碳薄膜的结构和成键性质

利用反应性质频磁控溅射在Ｓｉ（１００）单晶衬底上沉积氮化碳薄膜,并系统地了薄膜的结构,成分及化学键等信息。Ｘ射线衍射分析表明,制备的氮化碳薄膜具有非晶结构。红外吸收谱说明薄膜中碳,氮原子结构成化学键,其中包括碳,氮单键。     

纳米金属颗粒分散氧化物Ag/NiO薄膜的制备与光吸收特性

利用溶胶-凝胶法制备了纳米金属颗粒分散氧化物Ag/NiO复合薄膜,用X射线荧光光谱、X射线衍射分析、透射电子显微镜、紫外可见分光光度计表征了薄膜的成分、相结构、微结构以及光吸收特性.X射线衍射分析结果表明存在NiO相和单质Ag相.光吸收谱研究表明,Ag/NiO薄膜在410 nm波长附近有明显的表面等离子共振吸收峰,随着Ag含量的增加,吸收峰变窄,蓝移,强度增加.当Ag含量接近41%(质量分数)时,Ag/NiO薄膜在414 nm波长附近表现的吸收峰呈现最大的吸收强度;当Ag分散颗粒的含量超过41%(质量分数)后,吸收峰的强度开始下降.随着保温时间的延长,薄膜的光学吸收峰的强度增强,并且吸收峰峰位向波长短的方向移动.     

磁控溅射沉积非晶碳膜微结构及电学性能

在单晶Si (100)基体上,采用闭合场非平衡磁控溅射方法沉积制备了导电非晶碳膜.X射线衍射(XRD)分析表明薄膜呈明显的非晶结构;用XPS分析了薄膜中的碳键结构,碳膜的C1s峰位于284～285 eV之间,Cls峰分峰拟舍得出sp2C的原子数分数为59％左右,碳键以sp2结构为主;四探针法测得薄膜的电阻率为1.32×...     

磁控反应溅射AIN薄膜光学性能研究

为了制备光学性能良好的AlN薄膜.采用磁控反应溅射法制备了氮化铝(AlN)薄膜,利用椭圆仪、分光光度计、傅立叶变换光谱仪对AlN薄膜进行了相关光学性能的分析.结果表明:在波长为400～1100nm时,AlN薄膜的折射率为2.0～2.4,透过率都在88%以上;在200～300nm远紫外光范围内,薄膜具有强烈的吸收;在红外吸收光谱中,677cm-1处存在1个强烈的吸收峰,说明薄膜中已经形成了AlN.     

MOCVD方法制备BeH2薄膜

采用二叔丁基铍(t-Bu2Be.Et2O)蒸气在加热的衬底上以热解的方式制备透明的BeH2薄膜。通过加热BeH2薄膜并借助氢气气相色谱仪探测到了薄膜释放的H2。X射线光电子能谱分析表明,薄膜表面层几乎完全被氧化成BeO。傅里叶变换红外光谱显示存在强烈的BeHBe键弯曲振动吸收峰。因此,二叔丁基铍在加热的基片上以分解的方式能够制备出BeH2薄膜。     

热处理对TiO_2溅射薄膜结构和光谱性能的影响

用直流反应磁控溅射法制备了TiO2薄膜,并对热处理前后试样的紫外可见光谱(UV-Visspectrum)和荧光发射光谱(PLSpectrunm)做了研究。发现热处理后试样的紫外可见光谱在496nm处出现了一个较为明显的吸收峰,荧光发射光谱496.5nm处出现一个荧光发射带肩。X射线光电子能谱(XPS)的分析结果表明,热处理可使薄膜中晶格氧扩散出去,生成Ti3+离子和氧空位。结合XPS的分析结果和理论计算,可推断热处理后出现的位于496nm处的吸收峰和496.5nm处的荧光带肩可被指认为薄膜中Ti3+离子的d电子跃迁产生。     

纳米薄膜X射线吸收光谱的鉴定

采用X射线吸收光谱研究了热丝化学气相沉积(CVD)合成的纳米金刚石薄膜和脉冲激光沉积的纳米SiC薄膜.结果表明:纳米金刚石薄膜的碳K边X射线吸收精细结构光谱显示的激发峰相当于微米金刚石薄膜的蓝移,是量子效应的显著特征,证明制备的是纳米金刚石薄膜,与高分辨透射电镜的结果完全吻合;纳米SiC薄膜的硅K边X射线吸收精细结构光谱和扩展X射线吸收精细结构光谱也显示了纳米薄膜短程有序的结构特征,表明获得的是纳米SiC薄膜.     

纳米金属颗粒分散氧化物Ag／NiO薄膜的制备与光吸收特性

利用溶胶．凝胶法制备了纳米金属颗粒分散氧化物Ag／NiO复合薄膜，用X射线荧光光谱、X射线衍射分析、透射电子显微镜、紫外可见分光光度计表征了薄膜的成分、相结构、微结构以及光吸收特性。X射线衍射分析结果表明存在NiO相和单质Ag相。光吸收谱研究表明，Ag／NiO薄膜在410nm波长附近有明显的表面等离子共振吸收峰，随着Ag含量的增加，吸收峰变窄，蓝移，强度增加。当Ag含量接近41％（质量分数）时，Ag／NiO薄膜在414nm波长附近表现的吸收峰呈现最大的吸收强度；当Ag分散颗粒的含量超过41％（质量分数）后，吸收峰的强度开始下降。随着保温时间的延长，薄膜的光学吸收峰的强度增强，并且吸收峰峰位向波长短的方向移动。     

金银复合纳米微粒的光学吸收特性

以NaHB4做还原剂,利用一步共还原氯金酸(HAuCl4)和硝酸银(AgNO3)制备了金银复合结构的纳米颗粒。用透射电子显微镜对所制备的金银复合纳米微粒的形貌和尺寸进行了表征。紫外可见光学吸收光谱的研究表明:通过一步共还原法所制备的金银复合纳米微粒的光学吸收谱具有单峰的等离子体吸收特征,其吸收峰介于纯金和纯银纳米颗粒特征吸收峰之间,且随着反应液中金离子和银离子的摩尔比的增加而向长波方向移动。Mie散射理论的定量计算结果同样说明了实验所观察到的金银复合纳米微粒的光学吸收的组分可剪裁性。     

High temperature dependence of the cubic phase content and optical properties of BN thin films

The temperature dependence of the cubic phase content and optical properties of Boron nitrogen (BN) thin films was studied in this paper. The BN thin films were deposited on fused silica and Si substrates by radio frequency bias magnetron sputtering. The BN film properties before and after annealing were characterized by Fourier transform infrared spectroscopy, X-ray photoelectron spectroscopy and UV-visible transmittance and reflection spectra. The results indicate that annealing temperature has a significant effect on the optical absorption edge, optical absorption coefficient α, refractive index n, and optical conductivity σ of BN films. The optical absorption edge shift to the high energy with annealing temperature increase indicates that the film optical band gap E_g becomes large. The change in the optical absorption properties results from the stress relaxation and phase transformation owing to the high temperature annealings. The dependence of α on the photon energy is fitted by the Urbach tail model in order to determine the Urbach energy E₀. In addition, it is found that refractive index n exists clearly different dependences on temperature in visible and ultraviolet regions, and the optical conductivity σ threshold moves to high energy with increasing annealing temperatures in the threshold region.     

Electronic and magnetic properties of polypyrrole films depending on their one-dimensional and two-dimensional microstructures

We report on the electronic and magnetic properties of polypyrrole films with a one-dimensional and two-dimensional microstructure. Polypyrrole films as well defined and stable polymers are studied. The aim of this work is an explanation of the macroscopic conductivity based on microscopic and electronic structure. In particular we attribute the high d.c. conductivity, the frequency-independent a.c. conductivity and the weak temperature dependence of the conductivity to the existence of two-dimensional crosslinked areas. We characterize the polypyrrole films by photoelectron spectroscopies (X-ray photoelectron spectroscopy (XPS), ultraviolet photoelectron spectroscopy (UPS)), by electron paramagnetic resonance (EPR) spectroscopy, and by the frequency- and temperature-dependent conductivity measurements. We compare the results to the corresponding properties of one-dimensional polypyrrole films. The two-dimensional films consist of a graphitic electronic structure in which pyrrole monomers either contribute to the two-dimensional π-system or maintain their monomeric character, as characterized by photoelectron spectroscopies. The EPR data reveal magnetic centers that show a Curie-like susceptibility and a weak Pauli contribution, and the latter does not contribute to the conductivity mechanism. The EPR linewidth is extraordinarily sharp and reversibly reflects the dynamics of the interaction to oxygen.     

Rutile-type titanium oxide films synthesized by filtered arc deposition

A filtered arc-deposition system was used to synthesize titanium oxide films by evaporating titanium ions in an oxygen environment. Fourier transform infrared spectroscopy and X-ray diffraction analysis show that the films exhibit the rutile-type structure. X-ray photoelectron spectroscopy reveals that a small amount of Ti²⁺ and Ti³⁺ still exists although Ti⁴⁺ is the main component in the films. The preferred orientation of the films is dependent on the substrate bias and oxygen pressure. Titanium oxide films with (101) and (002) preferred orientation were prepared by changing substrate bias and oxygen pressure. Ultraviolet–visible absorption spectroscopy was used to determine the optical band gap of the prepared films. The results show that the band gap of the films prepared under zero substrate bias is 2.39 eV. When the substrate bias is larger than −100 V, the optical band gap of the films is about 3.33 eV.     

THE BAND STRUCTURE AND WORK FUNCTION OF TRANSPARENT CONDUCTING ALUMINUM AND MANGANESE CO-DOPED ZINC OXIDE FILMS

Al and Mn co-doped-ZnO films have been prepared at room temperature by DC reactive magnetron sputtering technique. The optical absorption coefficient, apparent and fundamental band gap, and work function of the films have been investigated using optical spectroscopy, band structure analyses and ultraviolet photoelectron spectroscopy (UPS). ZnO films have direct allowed transition band structure, which has been confirmed by the character of the optical absorption coefficient. The apparent band gap has been found directly proportional to N^2/3, showing that the effect of Burstein-Moss shift on the band gap variations dominates over the many-body effect. With only standard cleaning protocols, the work function of ZnO: (Al, Mn) and ZnO: Al films have been measured to be 4.26 and 4.21eV, respectively. The incorporation of Mn element into the matrix of ZnO, as a relatively deepd onor, can remove some electrons from the conduction band and deplete the density of occupied states at the Fermi energy, which causes a loss in measured photoemission intensity and an increase in the su,rface work function. Based on the band gap and work function results, the energy band diagram of the ZnO: (Al, Mn) film near its surface is also given.     

Studies of nanostructured copper/hydrogenated amorphous carbon multilayer films

Nanostructured copper/hydrogenated amorphous carbon (a-C:H) multilayer grown in a low base vacuum (1 × 10⁻³ Torr) system combining plasma-enhanced chemical vapor deposition and sputtering techniques. These nanostructured multilayer were found to exhibit improved electrical, optical, surface and structural properties, compared to that of monolayer a-C:H films. The residual stresses of such multilayer structure were found well below 1 GPa. Scanning electron microscopy and atomic force microscopy results revealed a nanostructured surface morphology and low surface roughnesses values. X-ray photoelectron spectroscopy, secondary ion mass spectroscopy and energy dispersive X-ray analysis confirmed a very small amount of copper in these films. These structures exhibited very high optical transparency in the near infrared region (∼90%) and the optical band gap varied from 1.35 to 1.7 eV. It was noticed that the temperature dependent conductivity improved due to the presence of both copper and the nano-structured morphology.     

Sb2O3/CeO2共掺杂ZnO薄膜的研究

采用射频磁控溅射技术制备Sb2O3/CeO2共掺杂ZnO薄膜,研究了薄膜的结构及紫外光吸收性能.结果表明:Sb2O3和CeO2共同掺入ZnO薄膜后,ZnO(002)晶面的XRD衍射峰强度明显下降,ZnO薄膜呈混晶方式生长;共掺杂ZnO薄膜的紫外吸收性能明显优于纯ZnO薄膜,Sb对掺杂ZnO薄膜的结构和紫外吸收性能的影响...     

Ce3+掺杂SiO2材料低温处理条件下两光致发光带的比较

采用溶胶-凝胶技术通过添加Ce（NO3）3制备了掺杂Ce3＋离子的纳米SiO2材料,利用红外光谱、紫外-可见吸收光谱以及电子能谱等研究样品成分,并对不同热处理条件下样品的光致发光性能进行研究.结果表明,低温处理条件下样品中存在一定量的OH羟基,并且样品中的Ce离子主要以Ce^3＋的形式存在.在100-500℃较低温度下热处理的样品中存在两个峰值相近的光致发光带,最大值为344nm和357nm,其对应的最大激发峰分别为226nm和252nm.其中,344nm光致发光带起源于基体SiO2的缺陷中心,而357nm光致发光带起源于Ce^3＋的一种类液发光.     

STUDY OF RAY IRRADIATION ON DIAMOND-LIKE CARBON FILMS

Diamond-like carbon (DLC) films have been deposited on glass substrates using radio-frequency (rf) plasma deposition method, γ-ray, ultraviolet (UV) ray were used to irradiate the DLC films. Raman spectroscopy and infrared (IR) spectroscopy were used to characterize the changing characteristics of SP3 C-H bond and hydrogen content in the films due to the irradiations. The results show that, the damage degrees induced by the UV ray on the SP3 C-H bonds are much stronger than that by the r-ray. When the irradiation dose of γ-ray reaches 10×104Gy, the SP3 C-H bond reduces about 50% in number. The square electrical resistance of the films is reduced due to the irradiation of UV ray and this is caused by severe oxidation of the films. By using the results on optical gap of the films and the fully constrained network theory, the hydrogen content in the as-deposited films is estimated to be 10-25at.%.     

通过氢还原热处理提升TiO2薄膜的抗菌性能

提升在可见光区间的抗菌效率一直是二氧化钛(TiO₂)抗菌性能研究的重要方向。采用脉冲激光沉积(PLD)制备TiO₂薄膜,并通过氢还原热处理的方法提升TiO₂表面的氧空位浓度从而增强其抗菌性能。结果发现,在以单晶氧化钇稳定的氧化锆(YSZ)为衬底时,生长的TiO₂薄膜为高度择优取向的锐钛矿相。生长温度越高,锐钛矿相的XRD衍射峰越强,薄膜越致密。将在600℃下生长的350 nm厚的TiO₂薄膜进行抗菌性能测试,发现其抗菌率约为86%。对样品进一步在4%H2氛围下进行还原处理,发现其抗菌率提升到约为97%。通过XPS、UV-Visible和PL测试,发现TiO₂经过还原热处理后在其表面形成更多的氧空位,在TiO₂带隙中形成氧空位缺陷能级,导致在可见光区域吸光性能增强,使其具有更高的抗菌性能。通过氢还原过程调控材料的缺陷组成,并研究TiO₂薄膜的光催化抗菌性能及抗菌机理。这种简易的调控TiO₂光吸...     

Influence of oxygen partial pressure on properties of N-doped ZnO films deposited by magnetron sputtering

N-doped ZnO films were radio frequency(RF)sputtered on glass substrates and studied as a function of oxygen partial pressure(OPP)ranging from 3.0×10-4 to 9.5×10-3 Pa.X-ray diffraction patters confirmed the polycrystalline nature of the deposited films.The crystalline structure is influenced by the variation of OPP.Atomic force microscopy analysis confirmed the agglomeration of the neighboring spherical grains with a sharp increase of root mean square(RMS)roughness when the OPP is increased above 1.4×10-3 Pa.X-ray photoelectron spectroscopy analysis revealed that the incorporation of N content into the film is decreased with the increase of OPP,noticeably N 1s XPS peaks are hardly identified at 9.5×10-3 Pa.The average visible transmittance(380-700 nm) is increased with the increase of OPP(from～17%to 70%),and the optical absorption edge shifts towards the shorter wavelength.The films deposited with low OPP(≤3.0×10-4 Pa)show n-type conductivity and those deposited with high OPP(≥9.0×10-4 Pa)are highly resistive(105Ω·cm)