Sintering behaviour and microwave dielectric properties of BaAl2−2x(ZnSi)xSi2O8 ceramics

BaAl_2?2x(ZnSi)_xSi₂O₈ (x = 0.2–1.0) ceramics were prepared using the conventional solid-state reaction method. The sintering behaviour, phase composition and microwave dielectric properties of the prepared compositions were then investigated. All compositions showed a single phase except for x = 0.8. By substituting (Zn_0.5Si_0.5)³⁺ for Al³⁺ ions, the optimal sintering temperatures of the compositions decreased from 1475 °C (x = 0) to 1000 °C (x = 0.8), which then slightly increased to 1100 °C (x = 1.0). Moreover, the phase stability of BaAl₂Si₂O₈ was improved. A novel BaZnSi₃O₈ microwave dielectric ceramic was obtained at the sintering temperature of 1100 °C. This ceramic possesses good microwave dielectric properties with ε_r = 6.60, Q × f = 52401 GHz (at 15.4 GHz) and τ_f = ?24.5 ppm/°C.     

Preparation and microwave dielectric properties of BaLi1+xF3+x (x = 0–0.01) ceramics

BaLi_1+xF_3+x (x = 0–0.01) were successfully mechanosynthesized by a simple ball-milling process. The effects of excessive LiF and sintering method and/or annealing atmosphere on its sintering behavior, microstructure, and microwave dielectric properties have been investigated in this paper. The mechanosynthesized powder can be densified with relative densities of ∼95 % after sintering at 750–800 °C/2 h in N₂. The obtained ceramics exhibit excellent optimized microwave dielectric properties with ε_r of ∼11.46 ± 0.06, Q×f values of 83175 ± 1839 GHz and τ_f of ∼ − 70 ± 3 ppm/°C at the x = 0.006 composition. Its Q×f value could be improved to 94603 ± 2037 GHz) by post-annealing in N₂ after post annealing at 700 °C/2 h. The Q×f value could be further improved to (120,098 ± 2344 GHz) by hot-pressed sintering (HPS). Sintering in the ambient atmosphere or O₂ leads to lower Q×f values than those of the counterparts sintered in N₂ due to the introduction of F-vacancies by oxidation_, while little variation in ε_r andτ_f.     

Microwave dielectric properties of YAG ceramics prepared by sintering pyrolysised nano-sized powders

YAG ceramics with good dielectric properties were prepared via a modified pyrolysis method, with yttrium nitrate as the yttrium source and combined aluminium sulphate and aluminium nitrate as aluminium sources, and subsequent sintering in a muffle furnace. The effects of the different aluminium sources on the powder characteristic and the impact of sintering temperature, sintering aids (TEOS) and additive (TiO₂) on the dielectric properties of the ceramics were studied. The results show that well-dispersed pure YAG nano-powders can be obtained after calcination at 1000 °C with an aluminium sulphate and aluminium nitrate molar ratio of 1.5:2. The relative density, permittivity (ε_r) and quality factor (Q×f) of the YAG ceramics increase with sintering temperature and TEOS addition. TiO₂ can greatly promote τ_f to near-zero but decreases Q×f. The relative density, ε_r, Q×f and τ_f of the YAG–1 wt% TEOS–1 wt% TiO₂ ceramic obtained at 1520 °C are 97.6%, 9.9, 71, 738 GHz and −30 ppm/°C, respectively.     

Effect of the B2O3 addition on the sintering behavior and microwave dielectric properties of Ba3(VO4)2–Zn1.87SiO3.87 composite ceramics

The effect of the B₂O₃ addition on the low-temperature sintering, microstructure and microwave dielectric properties of the Ba₃(VO₄)₂–Zn_1.87SiO_3.87 composite ceramics was investigated. The results indicate that the addition of B₂O₃ can effectively promote the densification and further improve the microwave dielectric properties of the composite. The low-temperature sintering mechanism was ascribed to the formation of the liquid phase owing to the reaction between the additive B₂O₃ and the residual SiO₂ in the composite. B₂O₃–SiO₂ liquid phases can not only lower the sintering temperature, but also speed up the grain growth of the composite ceramics. The rapid grain growth occurs as the B₂O₃ content is more than 6 wt%. The 3 wt% B₂O₃ doped 0.5Ba₃(VO₄)₂–0.5Zn_1.87SiO_3.87 ceramics can be well sintered at 925 °C and exhibit excellent microwave dielectric properties of Q×f∼40,800 GHz, ε_r∼10 and τ_f∼0.5 ppm/°C.     

ZnO和Na2O对CaO-B2O3-SiO2介电陶瓷结构与性能的影响

研究了烧结助剂ZnO和Na2 O对CaO -B2 O3 -SiO2 (CBS)系微波介质陶瓷介电性能、相组成及结构特性的影响。烧结助剂ZnO在烧结过程中与B2 O3 及SiO2 生成低熔点玻璃相 ,有效地降低了材料的致密化温度 ,烧结机理为液相烧结。碱金属氧化物Na2 O虽然能够有效降低材料的烧结温度 ,但会破坏硅灰石晶体结构 ,引起材料微波性能显著降低。通过实验 ,制备出了具有优良微波介电性能的陶瓷材料 ,适用于LTCC基板及滤波器等高频微波器件的生产     

Low temperature sintering and microwave dielectric properties of 0.5LaAlO3–0.5SrTiO3 ceramics using copper oxide additions

The microwave dielectric properties and the microstructures of 0.5LaAlO₃–0.5SrTiO₃ ceramics with CuO addition prepared with conventional solid-state route have been investigated. Doping with CuO (up to 1 wt.%) can effectively promote the densification and remain comparable dielectric properties of 0.5LaAlO₃–0.5SrTiO₃ ceramics. It is found that 0.5LaAlO₃–0.5SrTiO₃ ceramics can be sintered at 1400 °C due to the sintering aid effect resulted from CuO as addition observed by scanning electron microscopy. The dielectric constant as well as the Q×f value decreases with increasing CuO content. At 1460 °C, 0.5LaAlO₃–0.5SrTiO₃ ceramics with 0.25 wt.% CuO addition possess a dielectric constant (_r) of 35.2, a Q×f value of 24 000 (at 8 GHz) and a temperature coefficient of resonant frequency (τ_f) of −13.5 ppm/°C.     

Sintering behavior,phase evolution and microwave dielectric properties of thermally stable Li2O-3MgO-mTiO2 ceramics (1≤m≤6)

Li₂O-3MgO-mTiO₂ (1≤m≤6) ceramics were prepared by the solid state reaction method. X-ray diffraction, energy dispersive spectrometer and scanning electron microscopy techniques were used to investigate the phase composition and crystal structure. With increasing m values, the phase structures of ceramics changed as: (Li₂Mg₃TiO₆, m=1)→(Li₂Mg₃Ti₄O₁₂ and Mg₂TiO₄, m=2,3)→(Li₂Mg₃Ti₄O₁₂, m=4)→(Li₂Mg₃Ti₄O₁₂, MgTiO₃ and Li₂MgTi₃O₈, m=5)→(Li₂Mg₃Ti₄O₁₂, MgTiO₃, Li₂MgTi₃O₈ and MgTi₂O₅, m=6). The optimized sintering temperature was lowered from 1275 °C to 1050 °C. When m=5, Li₂O-3MgO-5TiO₂ ceramics showed good microwave dielectric properties at a wide sintering temperature range of 1000–1200 °C, and the best microwave dielectric properties of Q×f=71,726 GHz, ε_r=21.9 and τ_f=−20.9 ppm/°C were obtained at a relatively low sintering temperature of 1050 °C.     

BaMnV2O7：A novel microwave dielectric ceramic for LTCC applications

A novel low-temperature fired BaMnV₂O₇ ceramic was fabricated with solid-state reaction. Rietveld refinements based on X-ray diffraction data and TEM analysis indicated that BaMnV₂O₇ exhibited a monoclinic structure with a P21/n space group. The dense microstructure of the BaMnV₂O₇ ceramic obtained at 850 °C was examined by scanning electron microscopy. The increasing content of V⁴⁺ affected the quality factor, which was confirmed by X-ray photoelectron spectroscopy. The intrinsic dielectric properties were obtained from far infrared reflectivity spectra. Additionally, the BaMnV₂O₇ ceramic showed good chemical stability with a Ag electrode and desirable microwave dielectric performance at 850 °C: ϵ_r = 11.7, Q × f =20040 GHz and τ_f = −48.2 ppm/°C, which can potentially be applied in LTCC technology.     

Sintering behavior and dielectric properties of SiO2–BPO4 glass-fluxed ceramics

(1–x)SiO₂–xBPO₄ (x?=?23–70?wt%) glass-fluxed ceramics have been prepared by a traditional ceramic process. The phase assemblage, sintering, crystallization behavior, microwave dielectric properties and chemical compatibility with Ag/Cu have been studied. The SiO₂-rich compositions (x?=?23–50?wt%) could be well densified at ～975?°C/2?h, while the BPO₄-rich compositions demonstrated poor sinterability and porous microstructure. The SiO₂-rich compositions sintered at 975?°C/2?h contained BPO₄, low temperature cristobalite and glassy phases. Crystallization of BPO₄ occurred at lower temperature than that of SiO₂. Good combined microwave dielectric properties with ?_r?=?～5, Q?×?f?=?25,000?GHz and τ_f value of –7.3?ppm/°C could be obtained when 10?wt% TiO₂ was added after sintering at 975?°C/2?h. The x?=?23?wt% composition chemically reacted with Ag, but exhibited good chemical compatibility with Cu after sintering at 975?°C/2?h.