High-current electron emission characteristics of cathodes based on diamond films

Using different gas source, four types of diamond thin films were prepared on silicon substrate by microwave plasma chemical vapor deposition (MPCVD) technology, and characterized in detail through scanning electron microscopy (SEM), Raman spectroscopy and Fourier transform infrared (FTIR) spectroscopy. High-current pulsed emission characteristics, tested with a 2 MeV line-inducing injector, showed that all of CVD diamond films had high emission current density (> 70 A/cm²) and [100] textured B-doped microcrystalline diamond film possessed the largest emission current density of 115.1 A/cm². No obvious bright light and luminescent zones from side view CCD images indicated a possible pure field-emission mechanism of these diamond cathodes. Simultaneously, large decrease in the electron emission capability, above 15%, could be observed after several pulsed measurements, but this decrease could be completely recovered through the treatment of surface re-hydrogenation for emitted diamond cathodes, suggesting that emission performance of CVD diamond cathodes was closely relevant to hydrogen coverage ratio. The present data indicated that as-deposited CVD diamond films could be a potential candidate as cold cathode for the application in high-current electron emission field.     

Thermionic electron emission from nitrogen-doped homoepitaxial diamond

Nitrogen-doped homoepitaxial diamond films were synthesized for application as low-temperature thermionic electron emitters. Thermionic electron emission measurements were conducted where the emission current was recorded as a function of emitter temperature. At a temperature < 600 °C an emission current was detected which increased with temperature, and the emission current density was about 1.2 mA/cm² at 740 °C. The electron emission was imaged with photoelectron emission microscopy (PEEM) and thermionic field-emission electron microscopy (T-FEEM). The image displayed uniform electron emission over the whole surface area. Thermionic emission and ultraviolet photoemission spectroscopy were employed to determine the temperature dependent electron emission energy distribution from the nitrogen-doped homoepitaxial diamond films. The photoemission spectra indicated an effective work function of 2.4 eV at 550 °C. These values indicate reduced band bending and establish the potential for efficient electron emission devices based on nitrogen-doped homoepitaxial diamond.     

Development of an evaluation system for electron emission characteristics and generation of X-rays using a needle type semiconductor diamond electron emitter

Emission currents and other characteristics of needle type diamond electron emitters were evaluated for application to diamond X-ray sources. The evaluation system consisted of a Pyrex glass vacuum chamber, a turbo molecular pump, and a − 50 kV high-voltage supplier. A needle type phosphorus-doped semiconductor diamond electron emitter was kept at 600 °C by ohmic heating in a vacuum environment; emission current of ca. 1.1 μA was observed with bias voltage of − 50 kV. In addition, the electron orbit and intensity were estimated using an electron optics and electron gun design program ‘EGUN’. Great differences were apparent between experimental and calculated results: 64 μA electron emission current. This result was probably the result of a change in the shape of the tip of the diamond electron emitter. X-rays were generated using electrons from the diamond electron emitter with a tungsten target; energy spectra of the generated X-rays were measured. Then fluoroscopy was carried out.     

Spatial correlation of photo-induced and thermionic electron emission from low work function diamond films

Hydrogen terminated, nitrogen doped diamond thin films have been the focus of recent research for application in thermionic energy conversion devices and possibly in solar cells. Nitrogen doped diamond films can attain negative electron affinity (NEA) through treatment with hydrogen plasma, which also produces a very low work function surface. Photoemission and thermionic emission spectroscopy measurements confirm a work function of approximately 2 eV for such films. The research presented here includes results from imaging these thin films with photo-electron emission microscopy (PEEM) and thermionic electron emission microscopy (ThEEM), in addition to spectroscopic studies using ultraviolet photoelectron spectroscopy (UPS). From the images it can be concluded that the photo- and thermionic emission are spatially uniform and do not originate from different isolated emission sites. This observation holds true up to the highest resolution and for all temperatures investigated (300–800 K). While relatively uniform, the emission is found to be influenced by the surface morphology and film microstructure. The spatial intensity distributions of the PEEM and ThEEM images are very similar, as reflected by the structure present in both of these images. This observation indicates that both emission processes are enabled by the low work function of the film.     

Nanodiamod lateral device field emission diode fabricated by electron beam lithography

Nitrogen incorporated nanodiamond film is known to aid in promoting enhanced electron emission via the induced graphitic behavior both in the bulk material and also the surface of the film. Since electron emission current is inversely proportional to the cathode to anode inter-electrode distance; it is necessary to implement electron beam lithography (EBL) to obtain a small emission gap. To achieve high resolution from EBL, a thinner nanodiamond film is required. In this work, we fabricated lateral field emitters on a 0.65 µm nanodiamond film. The nanodiamond film was deposited onto a silicon-on-insulator (SOI) substrate in CH₄/H₂/N₂ plasma ambient by microwave chemical vapor deposition. The SOI was prepared for diamond nucleation using mechanical abrasion and ultrasonication in nanodiamond powder. Electron beam lithography (EBL) was used to delineate a 10 emitter tipped diode with a 2 µm anode-to- anode emission gap.     

A monolithic electron beam amplified carbon nanotube field emission cell

This article reports the fabrication and characterization of a CNT field emission cell with a built-in electron beam source for electron excited amplified field emission. A monolithic lateral field emission cell (FEC) with integrated metallic anode was fabricated. Then the field emission behaviors with and without activation of the built-in electron beam were characterized in diode configuration. A high voltage of 1.8 kV was applied to generate the bombarding electron beam on the FEC. The emission current of the FEC increases markedly with the activation of the electron beam source due to impact ionization and direct interaction with the FEC CNT cathode. The emission behaviors were confirmed by F–N plots. It was found that almost 10 times current amplification was achieved. These results demonstrate the feasibility of an electron beam amplified field emission using carbon nanotube emitters.     

Synthesis of diamond using ultra-nanocrystalline diamonds as seeding layer and their electron field emission properties

A modified nucleation and growth process was adopted so as to improve the electron field emission (EFE) properties of diamonds films. In this process, a thin layer of ultra-nanocrystalline diamonds (UNCD), instead of bias-enhanced-nuclei, were used as nucleation layer for growing diamond films in H₂-plasma. The morphology of the grains changes profoundly due to such a modified CVD process. The geometry of the grains transform from faceted to roundish and the surface of grains changes from clear to spotty. The Raman spectroscopies and SEM micrographs imply that such a modified diamond films consist of UNCD clusters (~ 10–20 nm in size) on top of sp³-bonded diamond grains (~ 100 nm in size). Increasing the total pressure in CVD chamber deteriorated the Raman structure and hence degraded the EFE properties of the films, whereas either increasing the methane content in the H₂-based plasma or prolonged the growth time improved markedly the Raman structure and thereafter enhanced the EFE properties of diamond films. The EFE properties for the modified diamond films can be turned on at E₀ = 11.1 V/μm, achieving EFE current density as large as (J_e) = 0.7 mA/cm² at 25 V/μm applied field.     

Microscopic study of field emission from diamond particles

The field emission properties and microscopic characteristics of diamond particles (DPs) are studied by scanning electron microscopy (SEM), secondary electron spectroscopy (SES), scanning tunneling microscopy/spectroscopy (STM/STS), scanning field emission microscopy (SFEM) and field emission electron microscopy (FEEM). DPs with an average size of 1 μm were spin-coated onto a tungsten substrate. After the spin-coat process, an undoped thin diamond layer was grown on the DP surfaces by the conventional microwave plasma-assisted CVD method. Consequently, the total emission current measured on the DP-seeded substrate (1×1 cm²) was approximately 1 mA under an electric field of 3.5 kV/mm. The DPs with the CVD diamond overcoat have facet edges of diamond, which are sometimes covered with small crystallites. The SES spectrum for these samples showed that the surface of DPs with a CVD diamond overcoat has essentially a NEA surface. The SFEM was able to image the distribution of field emission sites by scanning the STM tip with fixed tip height. The SFEM and FEEM images suggest that some particular DPs contribute to field emission and the emission occurs from the top site of the DP. The modification of surface property and electric field at the top site or edge of the DP affects the effective field emission.     

Interface and interlayer barrier effects on photo-induced electron emission from low work function diamond films

Nitrogen-doped diamond has been under investigation for its low effective work function, which is due to the negative electron affinity (NEA) produced after surface hydrogen termination. Diamond films grown by chemical vapor deposition (CVD) have been reported to exhibit visible light induced electron emission and low temperature thermionic emission. The physical mechanism and material-related properties that enable this combination of electron emission are the focus of this research. In this work the electron emission spectra of nitrogen-doped, hydrogen-terminated diamond films are measured, at elevated temperatures, with wavelength selected illumination from 340 nm to 450 nm. Through analysis of the spectroscopy results, we argue that for nitrogen-doped diamond films on metallic substrates, photo-induced electron generation at visible wavelengths involves both the ultra-nanocrystalline diamond and the interface between the diamond film and metal substrate. Moreover, the results suggest that the quality of the metal–diamond interface can substantially impact the threshold of the sub-bandgap photo-induced emission.     

High intensity, pulsed electron beam emission from carbon nanotube cathodes

High intensity electron emission cathodes based on carbon nanotube films have been successfully fabricated by use of a screen printing method. The emission properties of the cathode were investigated in single-pulse and double-pulse modes. The high intensity emission from the cathode is obtained and the highest emission current density reaches 267 A/cm² at an electric field of 15.4 V/μm in double-pulse mode. Emission images of the cathode surface prove that the plasma layer forms on the cathode surface, and the production mechanism of the high-current electron beams is explosive electron emission. This carbon nanotube cathode appears to be suitable for high-power microwave device applications.     

Diamond growth by hollow cathode arc chemical vapor deposition at low pressure range of 0.02–2 mbar

An attempt was made to synthesize diamond films on (001) silicon substrates by means of a graphite or tungsten hollow cathode arc chemical vapor deposition at a lower pressure range of 0.02–2 mbar. The hollow cathode arc provides the advantage of the generation of a large area, high-flux electron beam, a very high-density plasma, and the high kinetic reaction species due to relatively low pressure operation. Diamond films have been characterized by scanning electron microscopy and Raman spectroscopy. The quality of diamond films deposited using the graphite hollow cathode was better than that using the tungsten hollow cathode at 2 mbar pressure. With further decreasing the deposition pressure, the evaporation and sputtering of the graphite hollow cathode are increased and the film quality was deteriorated. The growth rate of diamond films decreased and the nucleation density increased with decreasing deposition pressure.     

Local field electron emission from grain boundaries of CVD diamond film

In this article, we have investigated local field electron emission from grain boundaries of diamond films with (100) preferential orientation by double-probe scanning electron microscopy (SEM). Compared with the field emission from the plane area of diamond film, local field emission from grain boundary area is greatly enhanced at the same applied field, and further increased with the increasing of grain boundary number density. This result provides a direct evidence that grain boundary plays an important role in field emission from diamond film because a great deal of sp² graphitic carbon phases exists in grain boundary areas as electron transport channels for the surface field emission process.     

Observation of electron field emission patterns from B-doped diamond films

To develop electron beam sources of carbon materials, field emission patterns were observed in three different setups. The first was a diode-type, in which a carbon specimen was facing to a positively biased fluorescence plate. The second was a triode-type, in which a positively biased grid was placed between them. In the third setup, a commercial electron gun was modified so that it could accommodate a carbon specimen and a grid. A fluorescence plate was placed in a vacuum chamber outside the gun. As the carbon specimen for electron emission source, B-doped diamond films, a single crystal diamond with a B-doped layer, an undoped diamond film and a glass-like carbon both with a fibrous structure at the surface, and a sponge carbon were used. It was found that electron emission from edges was dominant for 1×1 cm diamond films and carbon specimens in the diode-type setup. In the triode-type setup, the edges of the specimens were masked with a Kapton® tape. The electron emission occurred only from some spots on the specimen. In the electron gun setup, it was confirmed that an electron beam was generated, and a fairly uniform circle was seen on the fluorescence plate under defocused situation, while the circle became smaller by adjusting the current of the focusing lens. Although more uniform emission from the electron source materials seemed to be necessary for practical applications, it was demonstrated that an electron beam could be generated even in such a simple setup.     

Field penetration and its contribution to field enhanced thermionic electron emission from nanocrystalline diamond films

Field emission from sulfur doped nanocrystalline diamond films is characterized by intense emission sites with nm scale diameters. Field emission measurements were obtained at room temperature and analyzed in terms of the Fowler–Nordheim expression where electron emission is due to tunneling through a diminished barrier. The electron emission versus temperature was also recorded at a series of applied fields from 0.5 to 0.8 V/μm. These results were analyzed in terms of a modified Richardson–Dushman relation which describes field dependent thermionic emission. It was found that both sets of data could be fit with a work function of 2.0 eV and a field enhancement factor of  1750. The large field enhancement could not be correlated with specific structures on the relatively flat surfaces. The field and thermionic-field emission from the sulfur doped nanocrystalline diamond films is evaluated by a model which includes barrier lowering as a result of field penetration effects.     

In vivo preliminary evaluation of bone-microcrystalline and bone-nanocrystalline diamond interfaces

Chemical vapor deposited diamond is a new potential biomedical material which has the advantage of chemical inertness, extreme hardness and low coefficient of friction, among others. In orthopedics and maxillofacial surgery, these properties could improve implant performance, reducing metallic corrosion, particle wear, inflammatory reactions and bone loss. In the present study, two types of chemical vapor deposition (CVD) diamonds have been analyzed: microcrystalline diamonds (MD) and nanocrystalline diamonds (ND), both produced by hot-filament chemical vapor deposition. The diamond tubes were previously characterized by scanning electron microscopy (SEM), atomic force microscopy (AFM) and Raman scattering spectroscopy (RSS). The aim of this study was to verify the interface between bone and MD and ND, surgically implanted in the femoral diaphysis of Wistar rats, after 4 and 8 weeks. The outcome was evaluated by scanning electron and optical microscopy using a semi quantitative method. The results suggest that nanocrystalline diamonds (ND) elicits a richer biological response than microcrystalline diamonds (MD) when in interaction with bone.     

Microcharacterization of CVD diamond films by scanning electron microscopy: morphology, structure and microdefects

This paper contains a survey of recent papers on the scanning electron microscopy (SEM) of CVD diamond films. Two analytical possibilities of the SEM instrument are discussed: the morphological investigations (secondary electron emission mode) and the recognition of impurities and defects (cathodoluminescence mode). Examination of the diamond films by SEM demonstrates that the morphologies of these films are affected by synthesis conditions, especially the substrate temperature, the methane concentration and the total pressure in the reactor. Cathodoluminescence spectra and images are a useful tool for clarifying the relationship between emission centres and different types of defects generated during the process of growing diamond crystals. The aim of this paper is to show that investigations of the morphology, crystallinity and local cathodoluminescence emission of CVD diamond films by SEM led to correlative information about the quality of these films in comparison with natural diamond.     

High-current electron emission of thin diamond films deposited on molybdenum cathodes

The results of investigation of emission characteristics of cold cathodes employing diamond and related films are presented. The films were deposited in a new millimeter wave plasma-assisted CVD reactor using Ar–H₂–CH₄ and Ar–H₂–CH₄–N₂ gas mixtures. To study the emission properties of the high-current cathodes they were subjected to ~ 50 ns high-voltage pulses with amplitudes up to 100 kV. Experiments show that the emission properties strongly depend on methane and nitrogen concentration in gas mixture. The homogeneous emission with current density of 220 A/cm² has been obtained. The prepared cathodes were successfully tested in high-power rf pulse compressor employing electron beam triggering.     

Behavior of CVD diamond-based TL dosimeters in radiotherapy environments using photon and electron beams from treatment accelerators

Chemical Vapor Deposited (CVD) diamond has great advantages for use as thermoluminescent dosimeters in radiotherapy environment because of the reproducible high quality and controlled doping. This study compares CVD diamond Thermally Stimulated Luminescence response to that of a classical ionization chamber. Clinically-relevant features like the depth-dose distributions as well as the absorbed dose profile are investigated for a 6 MV photon beam and a 6 MeV electron beam. Moreover electron beam cartography has been controlled by means of CVD diamonds. Reproducibility and repeatability of TL measurements are satisfying and a good TL sensitivity to both electron and photon beams is clearly shown. Comparing the TL responses presented here to the ionization chamber underline the very promising behavior of CVD diamonds, particularly in high dose gradient areas.     

Mechanism of diamond nucleation enhancement by electron emission via hot filament chemical vapor deposition

The mechanism of diamond nucleation enhancement by electron emission in the hot filament chemical vapor deposition process has been investigated by scanning electron microscopy, Raman spectroscopy and infrared (IR) absorption spectroscopy. The maximum value of the nucleation density was found to be 10¹¹ cm⁻² with a −300 V and 250 mA bias. The electron emission from the diamond coating on the electrode excites a plasma, and greatly increases the chemical species, as we have seen by in situ IR absorption. The experimental studies showed that the diamond and chemical species were transported and scattered from the diamond coating on the electrode and through the plasma towards the substrate surface, where they caused enhanced nucleation.     

Enhanced electron emission from functionalized carbon nanotubes with a barium strontium oxide coating produced by magnetron sputtering

Carbon nanotubes (CNTs) were functionalized with a surface coating using magnetron sputter deposition. The CNT samples used were prepared by plasma enhanced chemical vapor deposition and were vertically aligned to the surface of the tungsten substrate. A thin layer of barium strontium oxide approximately 100 nm in thickness was deposited on their surface using magnetron sputtering. The oxide coating was uniform, covering the whole surface of the CNTs and significantly lowered the work function while preserving the geometry. The resulting oxide coated CNTs had a work function of 1.9 eV and a field enhancement factor of 467, which led to a significant improvement in both field and thermionic emission. Compared to uncoated CNTs, the field emission was increased by a factor of two, while the thermionic emission increased by more than four orders of magnitude. At 4.4 V/μm, a field emission current of 23.6 μA was obtained from an emitting surface of 0.012 cm². Similarly, at 1.1 V/μm and 1221 K, a thermionic emission current of 14.6 mA was obtained.