正照射与背照射InGaAs探测器的性能对比研究

首先介绍了InGaAs台面探测器的研究进展，然后为了验证利用台面结制作背照射器件的可行性，利用分子束外延（MBE）方法生长的掺杂InGaAs吸收层PIN InP／InGaAs／InP双异质结外延材料，通过台面制作、钝化、电极生长、背面抛光等工艺，制备了8元台面InGaAs探测器，并测试了正照射和背照射时，器件的Ⅰ-Ⅴ、信号和响应光谱。测试结果表明，正照射和背照射情况下，器件的响应信号差别不大，正照射下器件的平均峰值探测率为4．1×10^11cm·Hz^1/2·W^-1，背照射下器件的平均峰值探测率为4．0×10^11cm·Hz^1/2·W^-1，但背照射情况下器件的响应光谱在短波方向有更好的截止。     

正照射与背照射InGaAs探测器的性能对比研究

首先介绍了InGaAs台面探测器的研究进展，然后为了验证利用台面结制作背照射器件的可行性，利用分子束外延(MBE)方法生长的掺杂InGaAs吸收层PIN InP／InGaAs／InP双异质结外延材料，通过台面制作、钝化、电极生长、背面抛光等工艺，制备了8元台面InGaAs探测器，并测试了正照射和背照射时，器件的I-V、信号和响应光谱。测试结果表明，正照射和背照射情况下，器件的响应信号差别不大，正照射下器件的平均峰值探测率为4．1×1011cm·Hz1/2·W-1，背照射下器件的平均峰值探测率为4．0×1011cm·Hz1/2·W-1，但背照射情况下器件的响应光谱在短波方向有更好的截止。     

正、背照InGaAs探测器的性能对比研究

为了验证利用台面结制作背照射器件的可行性,利用分子束外延(MBE)方法生长的掺杂InGaAs吸收层PIN InP/InGaAs/InP双异质结外延材料,通过台面制作、钝化、电极生长、背面抛光等工艺,制备了8元台面InGaAs探测器,并测试了正照射和背照射时,器件的I-V、信号和响应光谱.测试结果表明,正照射和背照射情况下,器件的响应信号差别不大,正照射下器件的平均峰值探测率为4.13×1011cmHz1/2W-1,背照射下器件的平均峰值探测率为4×1011cmHz1/2W-1,但背照射情况下器件的响应光谱在短波方向有更好的截止.     

俄歇复合对同质结InGaAs探测器探测率的影响

通过对InGaAs材料的俄歇(Auger)复合机制的理论分析,给出了少子寿命与材料组分、温度和载流子浓度的关系,从而得到材料参数等对InGaAs探测器的探测率影响的结果,优化材料参数和器件结构可抑制Auger复合机制,提高InGaAs探测器的探测率.     

AlGaN/GaN异质结紫外探测器

采用P-AlxGa1-xN/i-GaN/n-GaN异质结构成功制备了含铝组分分别为0.1和0.07的正照射可见盲紫外探测器,并分别测试了它们的伏安特性曲线和光电响应光谱.对于Al分为0.1的器件,在零偏压处出现了极低的暗电流密度,表明器件具有非常高的信噪比.高分辨率X射线衍射仪对材料的测试结果表明,高铝组分(0.1)窗口层薄膜材料的晶体质量较差,导致暗电流增大,而其窗口层的窗口选择作用则可以得到较高的响应率和较宽的响应波段.     

吸收层与倍增层分离的4H-SiC雪崩光电探测器

设计和制备了吸收层和倍增层分开的4H-SiC穿通型雪崩紫外光电探测器.设计器件的倍增层和吸收层厚度分别为0.25和1μm.采用multiple junction termination extension(MJTE)方法减少器件的电流集边效应和器件表面电场.对器件的暗电流、光电流和光谱响应进行了测量.器件在55V的低击穿电压下获得了一个高的增益(＞104);穿通前器件暗电流约为10pA数量级;0V偏压下器件光谱响应的紫外可见比大于103.光谱响应的峰值波长随反向偏压的增大而向短波方向移动,在击穿电压附近光谱响应的峰值波长移到210nm,此波长远远小于在0V时的响应峰值.结果显示器件在紫外光探测中具有优良的性能.     

高性能背照式GaN/AlGaN p-i-n紫外探测器的制备与性能

研究了GaN/AlGaN异质结背照式P-i-n结构可见盲紫外探测器的制备与性能.GaN/MGaN外延材料采用金属有机化学气相沉积(MOCVD)方法生长,衬底为双面抛光的蓝宝石,缓冲层为AiN,n型层采用厚度为0.8 μm的Si掺杂Al0.3Ga0.7形成窗口层,i型层为0.18 μm的非故意掺杂的GaN,P型层为0.15 μm的Mg掺杂GaN.采用C12、Ar和BCl3感应耦合等离子体刻蚀定义台面,光敏面面积为1.96×10-3cm2.可见盲紫外探测器展示了窄的紫外响应波段,响应区域为310-365 nm,在360 nm处响应率最大,为0.21 A/W,在考虑表面反射时,内量子效率达到82%;优质因子R0A为2.00×108 Ω·cm2,对应的探测率D*=2.31×1013·Hz1/2·W-1;且零偏压下的暗电流为5.20×10-13A.     

高性能InP/InGaAs宽光谱红外探测器

InP/In0.53Ga0.47As短波红外探测器是一种高性能的近室温工作器件,从200K到室温下都能获得较好的器件性能,从而大大降低了对制冷的要求.为了充分利用目标在可见光和短波波段的光谱信息,通过特殊的材料结构设计和器件背减工艺,成功实现了320×256InP/InGaAs宽光谱红外探测器,能够同时对可见光和短波红外响应,并从77 K到263 K工作温度下实现了对人脸、计算机及室外2.3 km处的景物成像.测试样管平均峰值探测率为2×1012 cmHz1/2/W,光谱响应为0.6～1.7 μm,光谱响应测试和成像结果同时验证了InP/InGaAs宽光谱探测器对可见光信号的探测.相比标准的InP/In0.53Ga0.47As短波探测器,InP/InGaAs宽光谱探测器显示了可见/短波双波段探测的效果,大大丰富了探测目标的信息量,可显著提升对目标的识别率.     

高性能短波红外 InGaAs 焦平面探测器研究进展

中科院上海技物所近十年来开展了高性能短波红外 InGaAs 焦平面探测器的研究。0.9～1.7?m近红外 InGaAs 焦平面探测器已实现了256×1、512×1、1024×1等多种线列规格,以及320×256、640×512、4000×128等面阵,室温暗电流密度＜5 nA/cm2,室温峰值探测率优于5×1012 cm?Hz1/2/W。同时,开展了向可见波段拓展的320×256焦平面探测器研究,光谱范围0.5～1.7?m,在0.8?m 的量子效率约20%,在1.0?m 的量子效率约45%。针对高光谱应用需求,上海技物所开展了1.0～2.5?m 短波红外 InGaAs 探测器研究,暗电流密度小于10 nA/cm2@200 K,形成了512×256、1024×128等多规格探测器,峰值量子效率高于75%,峰值探测率优于5×1011 cm?Hz1/2/W。     

InP/InGaAs探测器对伪装目标成像研究

高性能InP/InGaAs宽光谱探测器将前截止波长延伸到0.9μm之前,实现可见/短波双波段探测,大大丰富了探测目标的信息量,提高对目标的识别率.本文采用InP/InGaAs宽光谱探测器相机,通过设置一系列伪装实验,对比不同伪装目标的可见光波图像与短波红外图像的差异,重点探究短波红外对伪装目标的识别特性.通过实验结果发现:短波红外对一定厚度塑料、硅胶、皮肤具有穿透性;颜料、染料等同色不同材质的物体对短波红外具有选择性吸收,基于以上特性,短波红外体现了较好的伪装识别效果.在成像对比实验的基础上,进一步选择伪装效果对可见光和短波红外具有明显差异的实验样品,分别测量了它们对短波红外和可见光的反射率等参数,以深入地分析和理解短波红外识别伪装的机理.     

Phase Detectors/Phase Frequency Detectors for High Performance PLLs

Phase Frequency Detectors (PFDs) for use in clock distribution PLLs and Phase Detectors (PDs) for clock recovery PLLs that we have proposed recently to achieve high performance are reviewed and discussed. For the PFD, operating speed limitation and phase detecting characteristics are improved with two kinds of approaches, i.e., gate/logic design and configuration design. For the PD, a simple compensation technique to prevent the deterioration of the phase detecting characteristics by D-F/F and a new PD with delay cell of VCO replica are proposed to reduce the jitter caused by PD. By SPICE simulations and experiments, it is confirmed that the maximum operating speed of PFD is improved to more than twice of conventional one and the jitter caused by PD is reduced to a minimum level.     

两种钝化结构InGaAs红外探测器低频噪声的研究

低频噪声的测量和分析已成为红外探测器性能和可靠性评估的一种重要手段.制备了聚酰亚胺单层钝化和硫化后ZnS/聚酰亚胺双层钝化两种结构InGaAs探测器,测试了不同偏压或不同温度下器件的低频噪声谱,讨论了偏压和温度对InGaAs探测器低频噪声的影响.随着偏压的增加,噪声增大,拐点向低频方向移动,并且低频噪声随温度降低而减小.认为硫化后ZnS/聚酰亚胺双层钝化器件相对聚酰亚胺单层钝化器件相同偏压或温度下噪声较小,拐点低.因为硫化处理和ZnS层增强了钝化效果,器件的表面漏电流明显减小,因而大大降低了器件的低频噪声.     

Performance optimization of InGaAs power LDMOSFET

In this paper, a power laterally diffused metal-oxide-semiconductor field-effect transistor (LDMOSFET) on InGaAs is proposed to achieve substantial improvement in breakdown voltage, on-resistance and Baliga׳s figure-of-merit with reduced cell pitch. The proposed LDMOSFET contains two vertical gates which are placed in two separate trenches built in the drift region. The source and drain contacts are taken from the top. The modified device has a planer structure implemented on InGaAs which is suitable for medium voltage power integrated circuits. The performance of proposed device is evaluated using two-dimensional numerical simulations and results are compared with that of the conventional LDMOSFET. The proposed structure considerably reduces the electric field inside the drift region due to reduced-surface field (RESURF) effect even at increased doping concentration leading to improved design trade-off. The proposed device provides 144% higher breakdown voltage, 25% lower specific on-resistance, 8 times improvement in figure-of-merit, and 25% reduction in cell pitch as compared to the conventional device.     

Performance of Three-Millimeter Harmonic Generators and Crystal Detectors

Because of growing applications of millimeter wave measurements, a fairly thorough investigation of what could be expected from sources and detectors in the 3 mm region was made. The sources consisted of fourth-harmonic generators from a 1.25 cm fundamental. A type of crystal holder for both harmonic generators and detectors in which a small crystal wafer is positioned in the broad wall of the millimeter waveguide, being contacted by a whisker passing across the waveguide (the open-guide type) was found to be superior in general to units using crystal cartridges or modifications thereof. Factors affecting the performance of these units have been investigated statistically. It was found that the short-circuit current sensitivity in microamperes per microwatt of a good crystal detector of the type described above is not greatly less than the value for crystals at lower microwave frequencies, so that the minimum detectable signal is about the same. As an additional result, evidence for art important effect in which the harmonic generation process degrades the signal-to-noise ratio of the source is presented and discussed.     

背照式电荷耦合器件的研制

简要介绍了背照电荷耦合器件的工作原理、潜在优势和应用领域.设计了对常规电荷耦合器件芯片进行衬底减薄进而实现背照电荷耦合器件的技术方案.给出了相关的设计方法和工艺流程并对关键工艺技术进行了探讨.对所制成的背照电荷耦合器件组件的性能进行了分析和讨论.结果表明所提出并采用的技术方案是可行的.