基于柔性铰链结构的高灵敏度低频光纤光栅加速度传感器

设计了一种基于柔性铰链结构的光纤光栅加速度传感器,进行了结构理论分析,并构建有限元模型仿真分析了传感器的加速度传感特性。基于F-P滤波器构建了具有温度自补偿功能的光纤光栅加速度检测系统,并通过增加反馈控制电路,对F-P滤波器进行反馈控制,实现了系统的零点自温度补偿。对系统的特性进行了实验测试,结果表明:系统对加速度的连续激励信号和冲击激励信号均有良好的动态响应,系统的固有频率为380.0 Hz,动态响应范围可达65.6 dB,频率响应范围为10.0 ~240.0 Hz,灵敏度为236 pm/g,所设计的加速度传感器具有较强的横向抗扰能力,干扰方向灵敏度仅为工作方向灵敏度的3.5%。     

基于膜片与菱形结构的光纤布拉格光栅加速度传感器

提出了一种基于膜片与菱形结构的光纤布拉格光栅(FBG)加速度传感器,理论分析了传感器的加速度检波机理,推导了其灵敏度和谐振频率表达式。利用ANSYS和MATLAB软件对传感器的结构参数进行了优化设计,得到了尺寸更小但能满足实际应用需求的FBG加速度传感器,构建了有限元模型并仿真了传感系统的振动特性。制备了传感器实物并进行了动静态特性测试。结果表明:在20～90℃温度条件下,FBG传感器具有较好的温度自补偿效果,有效减小FBG中温度对加速度测量的影响;该传感器1阶固有频率约为681.4 Hz,在频率为0～500 Hz范围内,传感器灵敏度与振动信号频率呈良好的线性关系;膜片与菱形结构的组合应用增强了传感器横向抗干扰能力,并使得横向干扰度小于5%。     

一种基于分布式反馈激光器的FBG高速解调系统

采用分布式反馈(DFB)激光器,其电流驱动 信号为100kHz正弦波,同时配合 100kHz方波进行中断控制,在20～150mA驱动电流输出100kHz、1nm光谱范围 的波长扫描光。 激光器结合光环形器、光电管等光器件,配合信号采集与处理部分组成高速光纤布拉格光栅 (FBG)解调系统。实验 验证,本系统具有FBG波长信号静态、动态解调能力。在温度静态实验,解调系统 线性度为0.99921、 精度约为8pm。在2kHz、4kHz动态振动实验中,解调系统具有良好的响应度和精确度,并 可分析50kHz 以内的频谱信息。本文的FBG解调系统,结构简单,成本低,可用于FBG 100k Hz的高速解调,不受外界环境和光强扰动的干扰,稳定性高。     

基于CPM-FBG的单频窄线宽DFB光纤激光器

利用电弧放电对光纤Bragg光栅(FBG)折射率的调制作用,提出了基于折射率周期调制(CPM)FBG的单频窄线宽分布反馈(DFB)光纤激光器方案。建立了CPM-FBG的数学模型并进行了仿真,验证了CPM-FBG的相移光栅特性;在掺铒光纤(EDF)上制作出CPM-FBG,形成了DFB单频窄线宽光纤激光器,激光器阈值功率为25.4mW,3dB线宽为805Hz,边摸抑制比大于48.8dB。     

一种基于新型双轴圆弧铰链的二维FBG加速度传感器

为了实现大跨度桥梁中拉索构件的二维(two-dimensional, 2D)振动信号高精度测量,本文设计并研究了一种小型化的新型2D光纤布拉格光栅(fiber Bragg grating, FBG)加速度传感器,以解决现有FBG加速度传感器体积与质量较大的问题。所设计的FBG加速度传感器主要由含有质量块的双轴圆弧铰链、4个固定支架,以及刻有4段阵列FBG的光纤组成。通过建立FBG加速度传感器的动力学普遍方程,得到灵敏度与固有频率的理论数值,另外辅以Abaqus软件对其进行有限元仿真以验证理论推导的结果。实验测试数据表明,FBG加速度传感器的固有频率约为500 Hz,双FBG的布置使其灵敏度可以达到595.2 pm/g,此外对称推挽的圆弧铰链设计还具有优异的横向抗干扰和温度自补偿性能。最后以某中承式钢管混凝土拱桥为实际工程案例,使用所设计的2D FBG加速度传感器实现了吊索索力的有效测量。     

金属环封装低频光纤布拉格光栅振动传感系统研制

研制了一种金属环封装的单柱体芯轴式光纤布拉格光栅(FBG)振动传感器,搭建了基于非平衡迈克耳逊干涉仪相位载波调制(PGC)解调技术的FBG振动传感器解调系统,实现了低频振动信号的高精度实时解调,并分析了各参数对传感器谐振频率和灵敏度等特性的影响。实验结果表明,研制的FBG振动传感器谐振频率为388Hz,在10～200Hz频率范围内,传感器的加速度灵敏度约为81pm/g,且加速度响应平坦,起伏小于1dB,与理论分析结果基本一致。研制的振动传感器可实现200Hz以下低频振动信号的实时检测,解调系统的波长检测精度为1.07×10-3 pm,最小可检测加速度为1.3×10-5 g。     

基于光纤Bragg光栅的地震检波器的理论与实验研究

提出了一种新型的基于光纤Bragg光栅(FBG)的地震检波器。FBG地震检波器传感头由平面弹簧片、质量块和FBG构成。给出了该检波器的力学模型,理论推导与分析了该检波器的幅频特性和加速度灵敏特性,并讨论了影响该检波器灵敏度的主要因素。实验结果表明,该检波器具有良好的线性度、稳定性和耐受性;检波器的频率响应范围为10～140 Hz,传感器灵敏度为25.9pm/g,共振频率为167 Hz,较符合理论值;最高可检测加速度值大于30g。     

基于光纤DFB激光器的高分辨折射率传感器

分析一种基于腐蚀相移DFB激光器的高分辨率折射率传感器。外界折射率通过改变腐蚀DFB激光器的相移影响激光器的输出特性。通过详细分析相移和增益对激光输出特性的影响,获得了相移激光输出波长的关系。根据激光器基模和高阶模波长差对温度的自补偿特性,设计了高分辨率的折射率传感器。理论上获得了该传感方案在激光线宽为100 kHz时,折射率传感分辨率高达10-7数量级。     

一体式光纤光栅三维加速度传感器

提出了一种基于光纤光栅(FBG)的一体式三维加速度传感器.该传感器以十字梁为弹性体,采用有限元分析方法研究了弹性体的应变分布特征,5个光纤光栅按照特定的规则被封装在梁的表面.通过将两两组合的光纤光栅波长漂移量的差值作为传感器不同振动方向的输出信号,实现三维加速度的低耦合测量及温度补偿.振动测试结果表明,该传感器在x、y和z方向的谐振频率分别为2000,1920,1160 Hz,工作频带分别为20～1400 Hz、20～1300 Hz和10～800 Hz,在x、y和z方向的灵敏度分别为1.36,1.70,1.31 pm/g.该传感器具有良好的线性度、弱耦合性和温度补偿能力.     

用于量子密钥分发的半导体激光器温控系统

由于量子密钥分发(quantum key distribution,QKD)系统对光源的稳定性要求极高,尤其是激光器发出光的波长和光强的稳定性,直接影响了系统的成码率。由此,针对分布反馈式(distributed feedback,DFB)激光器的温度特性,设计一种有效的温度控制系统。系统以 FPGA 为控制核心,采用增量式PID算法,对DFB激光器的工作温度进行实时监控。采用热电制冷控制芯片MAX8520作为半导体制冷器(thermoelectric cooler,TEC)的驱动芯片。利用集成于DFB激光器内部的负温度系数(negative temperature coefficient,NTC)热敏电阻构成温度采集模块,组成闭环负反馈结构。通过实验测试,温度控制精度可达±0.03 ℃,波长漂移可控制在0.01 nm以内。该温控系统具有电路体积小、效率高和可靠性高等特点,可为激光器提供稳定的温度控制,以保证QKD系统的光源波长的稳定性。     

Interfacial reaction and shear strength of SnAgCu-xNi/Ni solder joints during aging at 150 °C

The interfacial microstructure and shear strength of Sn3.8Ag0.7Cu-xNi (SAC-xNi, x = 0.5, 1, and 2) composite solders on Ni/Au finished Cu pads were investigated in detail after aging at 150 °C for up to 1000 h. The interfacial characteristics of composite solder joints were affected significantly by the weight percentages of added Ni micro-particles and aging time. After aging for 200 h, the solder joints of SAC, SAC-0.5Ni and -1Ni presented duplex intermetallic compound (IMC) layers regardless of the initial interfacial structure on as-reflowed joints, whose upper and lower IMC layers were comprised of (CuNi)₆Sn₅ and (NiCu)₃Sn₄, respectively. Only a single (NiCu)₃Sn₄ IMC layer was ever observed at the SAC-2Ni/Ni interface on whole aging process. Based on the compositional analysis, the amount of Ni within the IMC regions increased as the proportion of Ni addition increased. The IMC (NiCu)₃Sn₄ layer thickness on the interface of SAC and SAC-0.5Ni grew more slowly when compared to that of SAC-1Ni and -2Ni, while for the (CuNi)₆Sn₅ layer the reverse is true. Except the IMCs sizes are increased with increased aging time, the interfacial IMCs tended to transfer their morphologies to polyhedra. In all composite joints testing, the shear strengths were approximately equal to non-composite joints. The fracturing observed during shear testing of composite joints occurred in the bulk solder, indicating that the SAC-xNi/Ni solder joints had a desirable joint reliability.     

有机发光二极管中ADN掺杂ErQ的1.54μm电致发光

自行设计了基于8-羟基喹啉铒(ErQ)为发射层(EMLs)和二硝酰胺铵(ADN)为蓝光主体材料的近红外有机发光二级管.器件的基本结构为(p-Si/NPB/EML/Bphen/Bphen:Cs2CO3/Sm/Au),设计并比较了三套不同发射层结构(ErQ/ADN为双层结构器件,(ErQ/ADN)×3为多层结构器件,ErQ:ADN为掺杂结构器件)的器件.三组器件在一定的偏压下,均可发出1.54μm的光,对应三价铒离子4I13/2→4I15/2的跃迁.其中,ADN:ErQ(1∶1)掺杂结构的近红外电致发光强度是ADN/ErQ双层结构中的三倍.此外,不同掺杂浓度的ADN:ErQ复合膜做了以下表征:吸收谱、光致发光谱和荧光寿命谱.实验结果证实了在近红外电致发光过程中存在从ADN主体分子到ErQ发射分子的高效率的能量转移.     

BNBST无铅压电陶瓷的制备工艺研究

设计了（Bi0.55Na0.5）1-X（BaaSrb）xTiO3（BNBST[100x-100a／100b]）无铅压电陶瓷新体系。该体系压电陶瓷具有工艺特性及压电响应好，压电常数高的特点，且有实际应用前景的新型压电陶瓷材料体系。采用传统的陶瓷工艺制备了（Bi0.55Na0.5）1-X（BaaSrb）xTiO3无铅压电陶瓷，研究了制备工艺参数对其物化结构性能的影响。生料的热重-差热（TGA-DTA）分析表明，粉料合成过程中，先是SrTiO3、BaTiO3的形成，然后是（Bi0．5Na0．5）Tio，的形成，同时三者形成固溶体；密度测试表明，陶瓷的体积密度随烧结温度的升高而增大，可较易获得理论密度94％的陶瓷；X-射线能谱分析（EDAX）研究表明，陶瓷的Bi、Na的挥发随着烧结温度的升高而加剧。研究结果表明，要制备性能优良的无铅压电陶瓷，需要精确控制制备工艺。     

Emerging interconnects: a state-of-the-art review and emerging solutions

Aluminium was a primary material for interconnection in integrated circuits (ICs) since their inception. Later, copper was introduced as interconnect material which has better metallic conductivity and resistance to electromigration. As the aggressive technology scaling continues, the copper resistivity increased because of size effects, which causes increase in delay, power dissipation and electromigration. The need to reduce the resistor-capacitor??????? delay, dynamic power utilisation and the crosstalk commotion is as of now the fundamental main impetus behind the presentation of new materials. The purpose of this paper is to do a survey of interconnect material used in IC from introduction of ICs to till date. This paper studies and reviews new materials available for interconnect application which are optical interconnects, carbon nanotube (CNT), graphene nanoribbons (GNRs) and silicon nanowires which are alternatives to copper. While doing a survey of interconnect material, it is found that multiwalled CNTs, multilayer GNR and mixed CNT bundles are promising candidates and are ultimate choice that can strongly address the problems faced by copper but on integration basis copper would last for coming years.     

钠离子对poly(dT).poly(dA).poly(dT)三螺旋DNA分子呼吸模式的影响

利用分子结构的螺旋对称性,建立了一个包括钠离子的三链DNA分子poly(dT)*poly(dA)*poly(dT)的晶格动力学模型,计算了poly(dT)*poly(dA)*poly(dT)的氢键呼吸模式.结果发现钠离子的加入明显地淬灭了位于较低频率的几个最为强烈的Hoogensteen氢键呼吸模式,而对Watson-Crick氢键呼吸模式影响不明显,这说明钠离子能提高poly(dT)*poly(dA)*poly(dT)三螺旋结构的稳定性.该计算结果很好地解释了poly(dT)*poly(dA)*poly(dT)的热融化实验.     

聚对苯撑苯并双(口恶)唑发光及其器件制备

采用光谱技术,研究了聚对苯撑苯并双(口恶)唑(PBO)溶液的光敏发光特性,并用相对法估算出溶液发光效率在50%范围.结合光谱技术、半导体电学和电化学等研究手段,具体研究了以PBO为发光层的单层电致发光器件,研究结果显示,电致发光与薄膜的光致发光有具有相同的发光中心,峰值位于510 nm左右.同时发现,由于存制备过程中不同处理条件使得不同厚度薄膜残留的掺杂物质浓度不同,从而引起薄膜的导电性的不同.使得器件的阈值场强随PBO厚度的减小而逐渐增加.     

人小肠粘膜免疫酶的定位研究—光镜和电镜免疫组织化学染色法

本文对免疫酶组织化学的样品制备程序和染色方法做了详细的阐述。用直接法、间接法和ABC法,对人小肠免疫酶的定位,进行了光镜和电镜的观察,染色阳性反应显著,获得了满意的效果。并对染色技巧做了分析和探讨。     

Arsenic deposition as a precursor layer on silicon (211) and (311) surfaces

We investigate the properties of arsenic (As) covered Si(211) and Si(311) surfaces by analyzing data from x-ray photoelectron spectroscopy (XPS) and low-energy electron diffraction (LEED) images. We then create a model using total surface energy calculations. It was found that both Si(211) and Si(311) had 0.68±0.08 surface As coverage. Si(211) had 0.28±0.04 Te coverage and Si(311) had 0.24±0.04 Te coverage. The Si(211) surface replaces the terrace and trench Si atoms with As for a lower surface energy, while the Si edge atoms form dimers. The Si(311) surface replaces all terrace atoms and adsorbs an As dimer every other edge site. These configurations imply an improvement in the mean migration path from the bare silicon surface by allowing the impinging atoms for the next epitaxial layer, tellurium (Te), to bind at every other pair of edge atoms, and not the step terrace sites. This would ensure a nonpolar, B-face growth.     

Joint estimation of TOA and DOA in IR-UWB system using a successive propagator method

Impulse radio ultra-wideband (IR-UWB) ranging and positioning require accurate estimation of time-of-arrival (TOA) and direction-of-arrival (DOA). With receiver of two antennas, both of the TOA and DOA parameters can be estimated via two-dimensional (2D) propagator method (PM), in which the 2D spectral peak searching, however, renders much higher computational complexity. This paper proposes a successive PM algorithm for joint TOA and DOA estimation in IR-UWB system to avoid 2D spectral peak searching. The proposed algorithm firstly gets the initial TOA estimates in the two antennas from the propagation matrix, then utilises successively one-dimensional (1D) local searches to achieve the estimation of TOAs in the two antennas, and finally obtains the DOA estimates via the difference in the TOAs between the two antennas. The proposed algorithm, which only requires 1D local searches, can avoid the high computational cost in 2D-PM algorithm. Furthermore, the proposed algorithm can obtain automatically paired parameters and has better joint TOA and DOA estimation performance than conventional PM algorithm, estimation of signal parameters via rotational invariance techniques algorithm and matrix pencil algorithm. Meanwhile, it has very close parameter estimation to that of 2D-PM algorithm. We have also derived the mean square error of TOA and DOA estimation of the proposed algorithm and the Cramer-Rao bound of TOA and DOA estimation in this paper. The simulation results verify the usefulness of the proposed algorithm.     

系统级封装新型埋入式电源滤波结构的研究

在高密度小尺寸的系统级封装(SiP)中,对供电系统的完整性要求越来越高,多芯片共用一个电源网路所产生的电压抖动除了会影响到芯片的正常工作,还会通过供电网路干扰到临近电路和其他敏感电路,导致芯片误动作,以及信号完整性和其他电磁干扰问题.这种电压抖动所占频带相当宽,几百MHz到几个GHz的中频电源噪声普通方法很难去除.结合埋入式电容和电源分割方法的特点,提出一种新型高性能埋入式电源低通滤波结构直接替代电源/地平面.研究表明,在0.65～4GHz的频带内隔离深度可达-40～75 dB,电源阻抗均在0.25ohm以下,实现了宽频高隔离度的高性能滤波作用.分别用电磁场和广义传输线两种仿真器模拟,高频等效电路模型分析这种低通滤波器的工作原理以及结构对隔离性能的影响,并进行了实验验证.