9.1-W High-Efficient Continuous-Wave End-Pumped Vertical-External-Cavity Surface-Emitting Semiconductor Laser

We report the first demonstration of an end-pumped vertical-external-cavity surface-emitting semiconductor laser (VECSEL) with more than 9.1-W continuous-wave output power at a wavelength of 1079 nm. In order to enable the VECSEL to operate in an end-pumping scheme, a liquid capillary bonding method is used to bond the VECSEL chip to the surface of an optically transparent heat spreader. Moreover, a modified distributed Bragg reflector is applied to the VECSEL chip structure to maximize the pump efficiency. These will result in an end-pumped VECSEL that is characterized by high output power with good beam quality without additional antireflection coatings of the samples. In combination with an end-pumped scheme and desirable output beam, the end-pumped VECSEL will prove useful in a variety of applications requiring compact module and efficient source with high output power.     

双散热片结构光抽运垂直外腔面发射激光器的热特性分析

利用ANSYS有限元热分析软件对光抽运垂直外腔面发射激光器(OPS-VECSEL)内部的热场分布和热矢量分布进行了模拟,对比分析了两种散热结构的散热性能,讨论了抽运光斑的参量和金刚石散热片厚度对器件热特性的影响。模拟分析表明:在抽运功率密度较大时,与单面键合金刚石散热片结构相比,双金刚石散热片结构的OPS-VECSEL温升较低,引起的谐振波长差较小,热量向芯片上下两侧散失有利于器件的散热,并且随着抽运功率密度的增大,双散热片结构的散热优势就越明显;当上部金刚石散热片的厚度为500μm、下部金刚石散热片的厚度在300～500μm时可以实现很好的散热效果。     

半导体可饱和吸收镜锁模光抽运垂直外腔面发射半导体激光器

介绍了半导体可饱和吸收镜锁模光抽运垂直外腔面发射半导体激光器的原理、基本结构特点、应用及设计中的主要问题,对其研究进展及未来发展趋势作了分析和总结。     

Vertical-External-Cavity Surface-Emitting Laser With Monolithically Integrated Pump Lasers

The monolithic integration of pump lasers and optically pumped vertical-external-cavity surface-emitting lasers is demonstrated. An innovative contacting scheme for the pump lasers offers high design flexibility and scalability. First devices at 1000 nm generate output powers of 2.5 W in pulsed and 0.65 W in continuous-wave operation.     

Novel Gain Medium Design for Short-Wavelength Vertical-External-Cavity Surface-Emitting Laser

We report on a novel material developed as the gain medium for a vertical-external-cavity surface-emitting laser (VECSEL) operating around 850 nm. The new material departs from the conventional approach of using GaAs as the quantum-well (QW) material and expands the previously reported concept of using InAlGaAs QWs. The inclusion of indium pins dislocation propagation into the active region of the VECSEL. Crucial for the success of this design is also the development of indium and phosphorous containing quinternary strain-compensating layers. These surround the QWs and provide a more substantial resistance to defect propagation. Results are presented for stable high-power single spatial mode operation of a laser based on this material together with measurements of the unsaturated gain of the device and the characteristic temperature for the threshold power     

Enhancement of Pumping Efficiency in a Vertical-External-Cavity Surface-Emitting Laser

We report an improved optical pumping efficiency in a vertical-external-cavity surface-emitting laser (VECSEL) by employing the double-band mirror (DBM), which acts as a pump beam reflector as well as a cavity mirror. The optical pumping efficiency of a VECSEL with the DBM was increased by 23%, as compared to one with the conventional distributed Bragg reflector. It was found that the use of the DBM was more effective in the VECSEL with the shorter absorption layer thickness.     

半导体激光器反馈系统非线性仿真研究

针对光反馈半导体激光器接收系统微分方程组非线性的特点,根据龙格-库塔算法的思想和模型中的特点,提出了对当前迭代式中所需要的之前斜率值的估计算法,并对发射与接收信号进行了仿真,结果表明该算法可以使得接收端与发射端快速收敛一致,并能有效对该类系统进行仿真分析。     

5-W Yellow Laser by Intracavity Frequency Doubling of High-Power Vertical-External-Cavity Surface-Emitting Laser

We report on the development of a high-power tunable yellow–orange laser. It is based on intracavity frequency doubling of a widely tunable, highly strained InGaAs–GaAs vertical-external-cavity surface-emitting laser operating near 1175 nm. Over 5 W of continuous-wave output power is achieved and is tunable over a 15-nm band centered at 587 nm. This compact low-cost high-power yellow–orange laser provides an innovative alternative for sodium guidestar lasers, medical and communication applications.      

基于Python的半导体激光二极管仿真技术研究

基于Python语言,编写具有UI界面的半导体激光二极管(LD)仿真EDA程序,该程序可以设置LD芯片有源区的材料组分,分析材料参数并计算波导折射率,绘制折射率分布曲线和光强分布曲线,计算芯片的有源区的能带结构及增益特性并绘制在不同载流子浓度下的光增益谱曲线。通过该EDA程序,对791 nm波长的半导体激光二极管芯片进行了仿真,参考仿真结果制作了发光区条宽为190μm,腔长为4 mm的芯片,15 A电流下其峰值功率达16.25 W。     

Finite-Element Time-Domain Simulation of Electric Discharges

A formulation to deal with materials having dispersive and nonlinear characteristics in the finite-element time-domain method is proposed. The approach is illustrated by an electric discharge simulation in a spark gap switch based on the collision plasma vector differential equation with a polarization current dependent resistivity. The simulated voltage response across the spark gap switch matches the waveform of the measured curve and allows the extraction of the unknown plasma frequency for the electric discharge in air.     

Semiconductor Device Simulation

Two of the numerical methods most widely used in solving the set of partial differential transport equations for holes, electrons, and electric field in semiconductor devices and the various numerical instability phenomena which can be encountered are described in detail. Also presented are approaches, using these methods, to calculate dc static solutions and small-signal solutions, and to simulate devices in voltage-driven, current-driven, and circuit-loaded operation. Sample results are given for each mode of operation for the case of Si avalanche-diode oscillators. The numerical methods and approaches are those developed at our laboratory and sufficient detail is presented to permit the development of similar Fortran codes by others.     

半导体激光器的新进展——第十二届国际半导体激光器会议评述

<正> 第十二届国际半导体激光器会议于1990年9月9日至13日在瑞士达沃斯举行。到会代表326人,宣读论文119篇,包括3篇特邀报告和31篇书面发言。许多知名专家学者也参加了本届会议,如日本东工大的末松先生、伊贺先生,美国贝尔研究中心的李天培先生等。     

半导体激光器模组的设计

设计了一种半导体激光器模组以满足实际应用的需要.在半导体激光器模组设计中,激光器选择、光学系统设计、激光器电路设计与"邦定"技术是模组设计的关键部分.论述了半导体激光器原理,介绍了半导体激光器模组光学系统与电路设计,阐述了模组设计中"邦定"技术的工艺流程与关键技术.模组中半导体激光器的波长为635nm,驱动电源在3V～ 5V之间,激光功率在2mW左右,光学系统由一个双胶合透镜和一个正透镜组合而成,设计研制的半导体激光器模组满足设计要求.     

前景美好的半导体激光器

半导体激光器已成为当今光电子技术领域中最活跃和应用最广泛的器件。本文评论了它的发展概况并对应用情况作了分析。指出LD将对其它一些激光器件进行全面挑战。     

半导体激光器的SPICE模型

本文利用通用电路分析软件SPICE中的受控元件和器件模型建立了一个新的半导体激光器电路模型。这个模型,可以用来模拟激光器的非线性、瞬态响应、小信号频率响应、阻抗特性以及发射光功率与注入电流的关系等,它使得激光器和它的相关电子电路能够统一地用SPICE分析。计算机的模拟结果与已报道的理论和实验值相一致。     

半导体激光器的瞬时光谱

本文叙述半导体激光器瞬时光谱研究的理论和测试系统。     

大功率蓝紫色GaN基半导体激光器的现状

自1996年日本的中村和赤崎等人开发成功蓝紫色激光器以来，很多企业和大学开始对蓝紫色GaN基半导体激光器的研发展开了激烈竞争。1999年，日亚化学工业公司率先使这种激光器实现了商品化；索尼株式会社和松下电器株式会社分别于2003年3月和2004年7月开始销售蓝光光盘记录仪，从而高密度光盘用光源大量涌入市场。     

半导体激光抽运探针源

从理论上和系统实验上阐述了一种新型全固化半导体激光抽运探针源。此抽运探针源利用激光增益开关控制的原理 ,通过控制直流偏置电流和射频驱动电流可产生两列重复频率在 1GHz左右 ,脉宽约为 50 ps的激光脉冲序列 ,并且两脉冲序列间的时间延迟在 2 0 0 ps范围可调。     

Proposal for Q-Modulated Semiconductor Laser

A novel structure and mechanism for high-speed modulation of semiconductor lasers are proposed and analyzed. The modulator consists of an antiresonant cavity acting as a rear reflector of the laser. The change of the absorption coefficient in the modulator results in a change in the reflectivity of the rear reflector, and consequently the Q-factor, the lasing threshold, and the output power. An implementation structure and numerical results for a Q-modulated distributed feedback laser are presented. The monolithically integrated Q-modulated laser has potential advantages of high speed, low wavelength chirp, high extinction ratio, and high power efficiency