100G WDM/OTN技术及工程设计研究

本文结合通信业务未来对于传送网需求,分析了当前100G WDM/OTN技术主要包含有FEC技术、DSP技术与相干接收技术等技术,并在最后从对100G WDM/OTN输送系统能力的设计、100G网络保护与恢复设计两方面研究了对100G WDM/OTN的工程设计,希望可以为相关人员在未来更好利用此项技术,以及对相关工程进行设计时能够带来一些启发。     

100G WDM/OTN系统关键技术及部署策略探讨

针对未来通信业务对传送网的需求,介绍了100G WDM/OTN系统采用的PM-QPSK技术、相干接收技术、DSP技术、FEC技术等关键技术,分析了这技术对传输性能提升的作用,最后对100G WDM/OTN的部署策略进行了探讨。     

2012年中国联通长途传输网100G WDM系统实验网工程

据了解,2012年中国联通长途传输网100G WDM系统实验网工程主设备采购招标项目包括:100G WDM系统OTM终端复用设备、100G WDM系统ROADM设备、100G WDM系统OA设备。项目分为两包,其中:第一包为天津—济南—青岛,其中济南为ROADM局站。第二包为天津—济南—郑州,其中天津—济南采用OMSP保护技术;全程3波道。     

广西联通二级干线传输网建设40G WDM系统的探讨

通过对广西联通二级干线传输网WDM系统现状和问题进行分析,并结合业务发展需求,提出建设40G WDM系统的必要性。针对当前网络拓扑结构进行了组网探讨,分析了利用现网结构和资源组建40G WDM系统省级干线的可行性,最后提出40×40G WDM系统组网方案。     

高速光传输系统的发展与展望

介绍了当前高速传输系统的现状,详细描述了100G、40G WDM的应用现状和技术发展,针对目前40G WDM的应用情况以及100G WDM的发展方向进行了分析,最后对下一步光网络技术向超100G迈进的发展方向进行了展望     

国内首条100G WDM长途传输系统正式开通运行

由中讯邮电咨询设计有限公司（下称中讯院）承担设计的国内首条100G WDM长途传输系统--2012年中国联通长途传输网100G WDM系统实验网工程,于2013年7月31日正式开通运行,成为国内首个承载100 Gbit/s业务的长途传输WDM系统。     

100G传输系统中的关键技术及解决方案

在介绍100G WDM系统标准现状的基础上,从传输、调制、映射封装、接口等方面阐述了100G WDM系统的关键技术及解决方案,最后重点介绍了100G WDM系统的关键技术的解决方案。     

100G WDM/OTN系统设计中的光功率均衡技术

在研究100G WDM/OTN系统主要参数的基础上,分析了光功率均衡对系统性能的影响,并介绍了现网中光功率均衡的实现方式。     

40GWDM系统的色度色散补偿研究

目前国内外运营商已开始规模建设40G WDM系统,为实现40G WDM系统的超长距传输,应对40G WDM系统的色散补偿做到最优配置。本文在实验室测试数据的基础上,研究出各种色散补偿模块的补偿效果,最后提出40G WDM系统现网应用时色散补偿的一些建议     

100G WDM技术发展及应用策略研究

通过分析100G WDM技术的标准进展,在介绍100G WDM关键技术的基础上,重点研究了100G WDM技术的组网和应用策略,为运营商进行100G部署提供参考。     

Development of the readout system for waveguide multilayer optical card

Waveguide multilayer optical card （WMOC） is a novel storage device of three-dimensional optical information. An advanced readout system fitting for the WMOC is introduced in this paper. The hardware mainly consists of the light source for reading, WMOC, motorized stages addressing unit, microscope imaging unit, CCD detecting unit and PC controlling ＆ processing unit. The movement of the precision motorized stage is controlled by the computer through Visual Basic （VB） language in software. A control panel is also designed to get the layer address and the page address through which the position of the motorized stages can be changed. The WMOC readout system is easy to manage and the readout result is directly displayed on computer monitor.     

Nanoimprint Lithography -A Next Generation High Volume Lithography Technique

IntroductionNanoimprint Lithography is a well-acknowl-edged low cost, high resolution, large area pattern-ing process. It includes the most promising methods,high-pressure hot embossing lithography (HEL) [2],UV-cured imprinting (UV-NIL) [3] and micro contactprinting (m-CP, MCP) [4]. Curing of the imprintedstructures is either done by subsequent UV-lightexposure in the case of UV-NIL or by cooling downbelow the glass transition temperature of the ther-moplastic material in case of HEL…     

Collinear phase-matching study of terahertz-wave generation via difference frequency mixed in GaAs and Inp

The collinearly phase-matching condition of terahertz-wave generation via difference frequency mixed in GaAs and InP is theoretically studied. In collinear phase-matching, the optimum phase-matching wave hands of these two crystals are calculated. The optimum phase-matching wave bands in GaAs and lnP are 0.95-1.38μm and 0.7-0.96μm respectively. The influence of the wavelength choice of the pump wave on the coherent length in THz-wave tuning is also discussed. The influence of the temperature alteration on the phase-matching and the temperature tuning properties in GaAs crystal are calculated and analyzed. It can serve for the following experiments as a theoretical evidence and a reference as well.     

Effects of the alloy compositions on the phonon-polaritons in ternary mixed crystals

Composition dependence of bulk and surface phonon-polaritons in ternary mixed crystals are studied in the framework of the modified random-element-isodisplacement model and the Bom-Huang approximation. The numerical results for Several Ⅱ - Ⅵ and Ⅲ- Ⅴ compound systems are performed, and the polariton frequencies as functions of the compositions for ternary mixed crystals AlxGa1-xAs, GaPxAS1-x, ZnSxSe1-x, GaAsxSb1-x, GaxIn1-xP, and ZnxCd1-xS as examples are given and discussed. The results show that the dependence of the energies of two branches of bulk phonon-polaritons which have phonon-like characteristics, and surface phonon-polaritons on the compositions of ternary mixed crystals are nonlinear and different from those of the corresponding binary systems.     

Influence of PVK ： NPB hole transporting layer on the characteristics of organic light-emitting devices

A doping system consisting of NPB and PVK is employed as a composite hole transporting layer （CHTL）. By adjusting the component ratio of the doping system, a series of devices with different concentration proportion of PVK ： NPB are constracted. The result shows that doping concentration of NPB enhances the competence of hole transporting ability, and modifies the recombination region of charge as well as affects the surface morphology of doped film. Optimum device with a maximum brightness of 7852 cd/m^2 and a power efficiency of 1.75 lm/W has been obtained by choosing a concentration proportion of PVK ： NPB at 1：3.     

New insert layer structure OLEDs

An insert layer structure organic electroluminescent device（OLED） based on a new luminescent material （Zn（salen）） is fabricated. The configuration of the device is ITO/CuPc/NPD/Zn（salen）/Liq/LiF/A1/CuPc/NPD/Zn（salen）/Liq/LiF/A1. Effective insert electrode layers comprising LiF（1nm）/Al（5 nm） are used as a single semitransparent mirror, and bilayer cathode LiF（1 nm）/A1（100 nm） is used as a reflecting mirror. The two mirrors form a Fabry-Perot microcavity and two emissive units. The maximum brightness and luminous efficiency reach 674 cd/m^2 and 2.652 cd/A, respectively, which are 2.1 and 3.7 times higher than the conventional device, respectively. The superior brightness and luminous efficiency over conventional single-unit devices are attributed to microcavity effect.     

Analysis of error performance on Turbo coded FDPIM

Due to variable symbol length of digital pulse interval modulation（DPIM）, it is difficult to analyze the error performances of Turbo coded DPIM. To solve this problem, a fixed-length digital pulse interval modulation（FDPIM） method is provided. The FDPIM modulation structure is introduced. The packet error rates of uncoded FDPIM are analyzed and compared with that of DPIM. Bit error rates of Turbo coded FDPIM are simulated based on three kinds of analytical models under weak turbulence channel. The results show that packet error rate of uncoded FDPIM is inferior to that of uncoded DPIM. However, FDPIM is easy to be implemented and easy to be combined, with Turbo code for soft-decision because of its fixed length. Besides, the introduction of Turbo code in this modulation can decrease the average power about 10 dBm, which means that it can improve the error performance of the system effectively.     

A method for calculating the center position of collimated light

It is a key problem to accurately calculate beam spots＇ center of measuring the warp by using a collimated laser. A new method, named double geometrical center method （DGCM）, is put forward for the first time. In this method, a plane wave perpendicularly irradiates an aperture stop, and a charge couple device （CCD） is employed to receive the diffraction-beam spots, then the geometrical centers of the fast and the second diffraction-beam spots are calculated respectively, and their mean value is regarded as the center of datum beam. In face of such adverse instances as laser intension distributing defectively, part of the image being saturated, this method can still work well. What＇s more, this method can detect whether an unacceptable error exits in the courses of image receiving, processing and calculating. The experimental results indicate the precision of this method is high.     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Preparation and Characterization of TaN ALD Precursors

High purity organic-tantalum precursors for thin film ALD TaN were synthesized and characterized.Vapor pressure and thermal stability of these precursors were studied.From the vapor pressure analysis,it was found that TBTEMT has a higher vapor pressure than any other published liquid TaN precursor,including TBTDET,TAITMATA,and IPTDET.Thermal stability of the alkyl groups on the precursors was investigated using a 1H NMR technique.The results indicated that the tertbutylimino group is the most stable group on TBTDET and TBTEMT as compared to the dialkylamido groups.Thermal stability of TaN precursors decreased in the following order:TBTDET ＞ PDMAT ＞ TBTEMT.In conclusion,precursor vapor pressure and thermal stability were tuned by making slight variations in the ligand sphere around the metal center.