蓝宝石衬底上GaN/AlxGa1-xN超晶格插入层对AlxGa1-xN外延薄膜应变及缺陷密度的影响

室温300K下,由于Al_xGa_1-xN的带隙宽度可以从GaN的3.42eV到AlN的6.2eV之间变化,所以Al_xGa_1-xN是紫外光探测器和深紫外LED所必需的外延材料.高质量高铝组分Al_xGa_1-xN材料生长的一大困难就是Al_xGa_1-xN与常用的蓝宝石衬底之间大的晶格失配和热失配.因而采用MOCVD在GaN/蓝宝石上生长的Al_xGa_1-xN薄膜由于受张应力作用非常容易发生龟裂.GaN/Al_xGa_1-xN超晶格插入层技术是释放应力和减少Al_xGa_1-xN薄膜中缺陷的有效方法.研究了GaN/Al_xGa_1-xN超晶格插入层对GaN/蓝宝石上Al_xGa_1-xN外延薄膜应变状态和缺陷密度的影响.通过拉曼散射探测声子频率从而得到材料中的残余应力是一种简便常用的方法,Al_xGa_1-xN外延薄膜的应变状态可通过拉曼光谱测量得到.Al_xGa_1-xN外延薄膜的缺陷密度通过测量X射线衍射得到.对于具有相同阱垒厚度的超晶格,例如4nm/4nm,5nm/5nm,8nm/8nm的GaN/Al_0.3Ga_0.7N超晶格,研究发现随着超晶格周期厚度的增加Al_xGa_1-xN外延薄膜缺陷密度降低,Al_xGa_1-xN外延薄膜处于张应变状态,且5nm/5nmGaN/Al_0.3Ga_0.7N超晶格插入层Al_xGa_1-xN外延薄膜的张应变最小.在保持5nm阱宽不变的情况下,将垒宽增大到8nm,即十个周期的5nm/8nmGaN/Al_0.3Ga_0.7N超晶格插入层使Al_xGa_1-xN外延层应变状态由张应变变为压应变.由X射线衍射结果计算了Al_xGa_1-xN外延薄膜的刃型位错和螺型位错密度,结果表明超晶格插入层对螺型位错和刃型位错都有一定的抑制效果.透射电镜图像表明超晶格插入层使位错发生合并、转向或是使位错终止,且5nm/8nmGaN/Al_0.3Ga_0.7N超晶格插入层导致Al_xGa_1-xN外延薄膜中的刃型位错倾斜30°左右,释放一部分压应变.     

纤锌矿GaN/AlxGa1-xN量子阱中极化子能量

采用LLP变分方法研究了纤锌矿GaN/Al_xGa_1-xN量子阱材料中极化子的能级,给出极化子基态能量、第一激发态能量和第一激发态到基态的跃迁能量与量子阱宽度和量子阱深度变化的函数关系。研究结果表明,极化子基态能量、第一激发态能量和跃迁能量随着阱宽L的增大而开始急剧减小,然后缓慢下降,最后接近于体材料GaN中的相应值。基态能量和第一激发态到基态的跃迁能量随着量子阱深度的增加而逐渐增加,窄阱时这一趋势更明显。纤锌矿氮化物量子阱中电子-声子相互作用对能量的贡献比较大,这一值(约40meV)远远大于闪锌矿(GaAs/Al_xGa_1-xAs)量子阱中相应的值(约3meV)。因此讨论GaN/Al_xGa_1-xN量子阱中电子态问题时应考虑电子-声子相互作用。     

AlGaN插入层对InAlN/AlGaN/GaN异质结散射机制的影响

InAlN/AlN/GaN异质结中,名义上的AlN插入层实为Ga含量很高的AlGaN层, Al, Ga摩尔百分比决定了电子波函数与隧穿几率,因此影响与InAlN/AlGaN势垒层有关的散射机制.本文通过求解薛定谔-泊松方程与输运方程,研究了AlGaN层Al摩尔百分含量对InAlN组分不均匀导致的子带能级波动散射、导带波动散射以及合金无序散射三种散射机制的影响.结果显示:当Al含量由0增大到1,子带能级波动散射强度与合金无序散射强度先增大后减小,导带波动散射强度单调减小;在Al含量为0.1附近的小组分范围内,合金无序散射是限制迁移率的主要散射机制,该组分范围之外,子带能级波动散射是限制迁移率的主要散射机制;当Al摩尔百分含量超过0.52,三种散射机制共同限制的迁移率超过无插入层结构的迁移率, AlGaN层显示出对迁移率的提升作用.     

压力及屏蔽对无限深量子阱中施主结合能的影响

对GaAs/Al_xGa_1-xAs和GaN/Al_xGa_1-xN无限深量子阱系统,考虑压力及屏蔽效应,利用变分方法数值计算这两种系统中的杂质态结合能。给出了结合能随阱宽和压力的变化关系,同时讨论了有无屏蔽时的区别。结果表明,结合能随压力增大而增大,随阱宽增大而减小;屏蔽效应随着压力的增加而增加,并且显著降低了杂质态的结合能。     

The low-temperature mobility of two-dimensional electron gas in AlGaN/GaN heterostructures

To reveal the internal physics of the low-temperature mobility of two-dimensional electron gas （2DEG） in Al- GaN/GaN heterostructures, we present a theoretical study of the strong dependence of 2DEG mobility on Al content and thickness of AlGaN barrier layer. The theoretical results are compared with one of the highest measured of 2DEG mobility reported for AlGaN/GaN heterostructures. The 2DEG mobility is modelled as a combined effect of the scat- tering mechanisms including acoustic deformation-potential, piezoelectric, ionized background donor, surface donor, dislocation, alloy disorder and interface roughness scattering. The analyses of the individual scattering processes show that the dominant scattering mechanisms are the alloy disorder scattering and the interface roughness scattering at low temperatures. The variation of 2DEG mobility with the barrier layer parameters results mainly from the change of 2DEG density and distribution. It is suggested that in AlGaN/GaN samples with a high Al content or a thick AlGaN layer, the interface roughness scattering may restrict the 2DEG mobility significantly, for the AlGaN/GaN interface roughness increases due to the stress accumulation in AlGaN layer.     

AlGaN/GaN异质结构中极化与势垒层掺杂对二维电子气的影响

从Ⅲ族氮化物中压电极化对应变弛豫度的依赖关系出发，通过自洽求解薛定谔方程和泊松方程,分别研究了自发极化、压电极化和AlGaN势垒层掺杂对AlxGa1-xN/GaN异质结构二维电子气的浓度、分布、面密度以及子带分布等性质的影响.结果表明：二维电子气性质强烈依赖于极化效应,不考虑AlGaN势垒层掺杂，当Al组分为0.3时，由极化导致的二维电子气浓度达1.6×10--13cm-2,其中压电极化对二维电子气贡献为0.7×10-13cm-2，略小于自发极化的贡献(0.9×10-13cm-2)，但为同一数量级，因而通过控制AlGaN层应变而改变极化对于提高二维电子气浓度至关重要. AlGaN势垒层掺杂对二维电子气的影响较弱, 当掺杂浓度从1×10-17增加到1×10-18cm-3时，二维电子气面密度增加0.2×10-13cm-2. 关键词： AlxGa1-xN/GaN 异质结构 二维电子气 自发极化 压电极化     

梯度铝镓氮缓冲层对氮化镓外延层性质的影响

采用金属有机物化学气相沉积系统在硅面碳化硅衬底的(0001)面上生长氮化铝缓冲层,并通过改变3层梯度铝镓氮(Al_xGa_(1-x)N:x=0.8,0.5,0.2)缓冲层的生长温度和氨气流量,制备出了高质量的氮化镓外延层。分别采用X射线衍射、原子力显微镜、光致发光谱和拉曼光谱对氮化镓外延层进行表征。实验结果表明,随着氮化镓外延层中张应力的降低,样品的晶体质量、表面形貌和光学质量都有显著提高。在最优的梯度铝镓氮缓冲层的生长条件下,氮化镓外延层中的应力值最小,氮化镓(0002)和(1012)面的摇摆曲线半峰宽分别为191 arcsec和243 arcsec,薄膜螺位错密度和刃位错密度分别为7×10~7cm~(-2)和3.1×108cm~(-2),样品表面粗糙度为0.381 nm。这说明梯度铝镓氮缓冲层可以改变氮化镓外延层的应力状态,显著提高氮化镓外延层的晶体质量。     

Experimental and theoretical investigations of optical properties of GaN/AlGaN MQW nanostructures. Impact of built-in polarization fields

We report the results from detailed optical spectroscopy from MOCVD grown GaN/AlGaN multiple quantum wells (MQWs), as opposed to most previous studies where MBE was employed by means of photoluminescence (PL) technique. In this paper we will present theoretical and experimental results demonstrating how polarization induced electric fields and bound interface charges in GaN/AlGaN MQWs affect the emission peak energy, PL line shape, as well as the emission line width. Theoretically estimated fields in this work are consistent with experimental data. Transition energy of the heavy hole and electron ground state Ee-hh in GaN/AlGaN MQWs were calculated and it is found that it stays in good agreement with the experimental data.     

Theoretical study of indirect excitons’ lifetime in coupled AlGaN/GaN quantum wells in the presence of an electrostatic trap

The lifetime of electrostatically trapped indirect excitons in a field-effect structure based on coupled AlGaN/GaN quantum wells has been theoretically studied. Within the plane of a double quantum well, indirect excitons are trapped between the surfaces of the AlGaN/GaN heterostructures and a semitransparent metallic top gate. The trapping mechanism has been assumed to be a combination of the quantum confined Stark effect and local field enhancement. In order to study the trapped exciton lifetime, the binding energy of indirect excitons in coupled quantum wells is calculated by finite difference method in the presence of an electric field. Thus, the lifetime of trapped excitons is computed as a function of well width, AlGaN barrier width, the position of double quantum well in the device and applied voltage.     

Ultrafast all optical modulation based on intersubband transition in semiconductor quantum wells

Ultrafast modulation of interband-resonant light by intersubband-resonant light in n-doped GaAs/AlGaAs and GaN/AlGaN quantum wells was investigated by femtosecond pump-probe technique. A planar-type AlGaAs/GaAs modulation device shows a modulation speed of ～1 ps at room temperature. The observed modulation efficiency indicates that 99% modulation can be achieved with a control pulse energy of ～1 pJ when a waveguide-type device structure is utilized. The feasibility of the all-optical modulation in GaN/AlGaN quantum wells is also investigated. The intersubband carrier relaxation time, which mainly determines the modulation speed, is measured and is found to be extremely fast (130–170 fs). The results indicate that the optical modulation at a bit rate of over 1 Tb/s will be possible by utilizing the intersubband transition in GaN/AlGaN quantum wells. The modulation efficiency in GaN/AlGaN quantum wells is also discussed in comparison with that in GaAs/AlGaAs quantum wells.     

Effect of interface roughness on the density of states of finite barrier height quantum wells

We calculate the density of states of a 2D electron gas in finite barrier height quantum wells with the explicit inclusion of the interface roughness effect. By using Feynman path-integral method, the analytic expression is derived. The results show that the 2D density of states is dependent on the RMS of the fluctuation potential. The interface roughness causes localized states below the subband edge. We also apply the theory to model the finite barrier height quantum wells in Al_xGa_1?xAs/GaAs.     

Performance Improvement of GaN-Based Violet Laser Diodes

The influences of InGaN/GaN multiple quantum wells(MQWs) and AlGaN electron-blocking layers(EBL) on the performance of GaN-based violet laser diodes are investigated. Compared with the InGaN/GaN MQWs grown at two different temperatures, the same-temperature growth of InGaN well and GaN barrier layers has a positive effect on the threshold current and slope efficiency of laser diodes, indicating that the quality of MQWs is improved. In addition, the performance of GaN laser diodes could be further improved by increasing Al content in the AlGaN EBL due to the fact that the electron leakage current could be reduced by properly increasing the barrier height of AlGaN EBL. The violet laser diode with a peak output power of 20 W is obtained.     

InGaN量子阱的微观特性

采用VASP程序包模拟计算InGaN量子阱的能带,精细展示了量子阱实空间能带结构。计算结果表明,In原子所在区域出现局域束缚态,导带底与价带顶的简并能级发生分裂,同时量子阱沿垂直结面方向存在分立的能级。此外,针对影响能带的In组分波动、能带弯曲等问题进行探讨,以准确描述其电子行为,从而深入系统地了解InGaN/GaN量子阱的电学光学等特性。     

Electron mobility in a modulation doped AlGaN/GaN quantum well

We consider a two dimensional electron gas confined to a modulation doped AlGaN/GaN quantum well and study the dependence of low field mobility on various parameters such as composition, well width, remote impurity and interface roughness as a function of temperature. GaN is assumed to be in the zincblende structure. Acoustic and optical phonon, ionized remote impurity and interface roughness scatterings are taken into account in mobility calculations. The scattering rates are calculated using the self-consistently calculated wave functions obtained from the numerical solution of Poisson and Schr?dinger equations. Also found from the self-consistent solutions are the potential profile at the junction, the energy levels in the well and electron concentrations in each level. Ensemble Monte Carlo method is used to find the drift velocities of the two dimensional electrons along the interface under an applied field. The mobility of two dimensional electrons is obtained from the drift velocity of electrons. It is found that while remote impurity scattering is very effective for small values of spacer layer and doping concentrations, increasing Al concentration reduces the mobility of electrons. The effect of surface roughness, on the other hand, on mobility is almost independent of well width. The results of our simulations are compatible with the existing experimental data.     

AlGaN/GaN高电子迁移率晶体管肖特基高温退火机理研究

在不同应力条件下,研究了AlGaN/GaN高电子迁移率晶体管高温退火前后的电流崩塌、栅泄漏电流以及击穿电压的变化.结果表明,AlGaN/GaN高电子迁移率晶体管通过肖特基高温退火以后,器件的特性得到很大的改善.利用电镜扫描(SEM)和X射线光电子能谱(XPS)对高温退火前、后的肖特基接触界面进行深入分析,发现器件经过高温退火后,Ni和AlGaN层之间介质的去除,并且AlGaN材料表面附近的陷阱减少,使得肖特基有效势垒提高,从而提高器件的电学特性. 关键词： AlGaN/GaN高电子迁移率晶体管 肖特基接触 界面陷阱     

Improved carrier injection and confinement in InGaN light-emitting diodes containing GaN/AlGaN/GaN triangular barriers

In this study, an InGaN lighting-emitting diode(LED) containing GaN/AlGaN/GaN triangular barriers is proposed and investigated numerically. The simulation results of output performance, carrier concentration, and radiative recombination rate indicate that the proposed LED has a higher output power and an internal quantum efficiency, and a lower efficiency droop than the LED containing conventional GaN or AlGaN barriers. These improvements mainly arise from the modified energy bands, which is evidenced by analyzing the LED energy band diagram and electrostatic field near the active region.The modified energy bands effectively improve carrier injection and confinement, which significantly reduces electron leakage and increases the rate of radiative recombination in the quantum wells.     

Influence of delta doping on intersubband transition and absorption in AlGaN/GaN step quantum wells for terahertz applications

Effects of delta doping location and density on intersubband transitions in AlGaN/GaN step quantum wells for terahertz (THz) applications have been investigated by solving Schrödinger and Poisson equations self-consistently. It shows that delta doping near the GaN well/AlGaN step well interface causes a blue-shift, while delta doping in the barrier or near barrier/GaN well and barrier/step well interfaces cause a red-shift first and then a blue-shift with increasing doping density. The shifts are attributed to the combination of many body effect and internal field modulation effect, and can be more than 200% or 70% of the e₁–e₂ transition energy, as for blue-shift or red-shift, respectively. In addition, the influences of delta-doping location and density on the absorption coefficient are also investigated in detail. Delta doping at the middle of a layer is found much more desirable over uniform-doping in order to improve the absorption coefficient, especially in the step well.     

Electric-field-induced impact ionization of excitons in GaN and GaN/AlGaN quantum wells

Impact ionization of exciton states in epitaxial GaN films and GaN/AlGaN quantum-well structures was studied. The study was done using an optical method based on the observation of exciton photoluminescence quenching under application of an electric field. It was established that electron scattering on impurities dominates over that from acoustic phonons in electron relaxation in energy and momentum. The mean free path of the hot electrons was estimated. The hot-electron mean free path in GaN/AlGaN quantum wells was found to be an order of magnitude larger than that in epitaxial GaN films, which is due to the electron scattering probability being lower in the two-dimensional case.     

铝镓氮薄膜双光子吸收效应

基于飞秒激发Z扫描实验技术,研究了氮化镓薄膜和不同铝掺杂含量的掺铝氮化镓(以下简称铝镓氮)薄膜的超快非线性光学响应特性。在开孔Z-scan测试中,纯Ga N晶体薄膜表现出典型的双光子吸收特性,双光子吸收系数为3.5 cm/GW,且随着激发光强的增大而逐渐减小。随后测试了不同铝掺杂含量的Al_xGa_(1-x)N薄膜的非线性吸收系数。结果表明,随着铝掺杂摩尔分数的提高(0,19%,32%,42%),非线性吸收系数逐渐减小(18,10,6,5.6 cm/GW)。结合半导体非线性吸收理论分析,Al_xGa_(1-x)N薄膜材料的非线性过程主要是双光子吸收主导非线性响应物理过程。实验结果与半导体双光子吸收过程Sheik-Bahae理论符合得很好。     

Effects of the strain relaxation of an AlGaN barrier layer induced by various cap layers on the transport properties in AlGaN/GaN heterostructures

The strain relaxation of an AlGaN barrier layer may be influenced by a thin cap layer above, and affects the transport properties of AlGaN/GaN heterostructures. Compared with the slight strain relaxation found in AlGaN barrier layer without cap layer, it is found that a thin cap layer can induce considerable changes of strain state in the AlGaN barrier layer. The degree of relaxation of the AlGaN layer significantly influences the transport properties of the two-dimensional electron gas (2DEG) in AlGaN/GaN heterostructures. It is observed that electron mobility decreases with the increasing degree of relaxation of the AlGaN barrier, which is believed to be the main cause of the deterioration of crystalline quality and morphology on the AlGaN/GaN interface. On the other hand, both GaN and AlN cap layers lead to a decrease in 2DEG density. The reduction of 2DEG caused by the GaN cap layer may be attributed to the additional negative polarization charges formed at the interface between GaN and AlGaN, while the reduction of the piezoelectric effect in the AlGaN layer results in the decrease of 2DEG density in the case of AlN cap layer.