YFeO3的电子结构和光学性质的第一性原理研究

稀土正铁氧体YFeO₃呈正交钙钛矿结构,其晶体和纳米晶材料在电极材料、 传感器和光催化领域具有重要的应用价值.用平面波赝势方法,采用广义梯度近似、改进的Perdew-Burke-Emzerhof交换-关联势、 实空间超软赝势计算方案,研究了YFeO₃晶体的几何结构、电子结构和光学性质. 计算得到的晶格参量与报道的实验结果一致.通过对能带结构、态密度、介电函数、吸收系数和光电导率的计算和分析, 确定YFeO₃是直接能隙半导体,能隙E_g约为2.22 eV,阐明了YFeO₃晶体和纳米晶具有较好的可见光催化性能.     

BaHf0.5Ti0.5O3电子结构与光学性质的第一性原理研究

基于密度泛函理论体系下的广义梯度近似（GGA）,利用第一性原理方法研究了BaHf_0.5Ti_0.5O₃的电子结构和光学性质.计算结果表明,BaHf_0.5Ti_0.5O₃是一种间接带隙半导体材料,其导带底主要由Ba、Hf和Ti的d态电子构成,价带顶则主要由O的p态、Hf和Ti的d态电子构成;理论计算的介电函数最高峰的峰位与实验结果吻合较好,相对误差小于4%;吸收系数最大峰值为2.43×10⁵cm^-1,且吸收主要集中在低能区,静态折射率为2.01,能量损失峰出现在13.24 eV处.研究结果为BaHf_0.5Ti_0.5O₃光电材料设计与应用提供了理论依据.     

BaHf0.5Ti0.5O3电子结构与光学性质的第一性原理研究

基于密度泛函理论体系下的广义梯度近似（GGA）,利用第一性原理方法研究了BaHf0.5Ti0.5O3的电子结构和光学性质．计算结果表明,BaHf0.5Ti0.5O3是一种间隙的半导体材料,其导带底主要由Ba、Hf和Ti的d态电子构成,价带顶则主要由O的p态、Hf 和Ti的d态电子构成;理论计算的介电函数最高峰的峰位与实验结果吻合较好,相对误差小于4%;吸收系数最大峰值为2.43×105cm-1,且吸收主要集中在低能区,静态折射率为2.01,能量损失峰出现在13.24eV处．研究结果为BaHf0.5Ti0.5O3光电材料设计与应用提供了理论依据．     

Ba0.5Ca0.5ZrO3电子结构和光学性质的第一性原理研究

从第一性原理出发,利用密度泛函理论体系下的广义梯度近似,研究了Ba0.5Ca0.5ZrO3的电子结构和光学性质.计算得到该晶体的晶格常数为4.1823 A,且此材料是一种间隙的半导体材料,价带和导带都来源于Ba原子、Ca原子、Zr原子的d态和O原子的p态电子间的杂化.吸收系数为105 cm-1量级,且吸收主要集中在低能区.静态折射率为1.79,能量损失峰出现在10.8 eV处.该研究结果为Ba0.5Ca0.5ZrO3光电材料的设计和应用提供了理论依据.     

BiTiO3电子结构及光学性质的第一性原理研究

采用基于第一性原理的赝势平面波方法, 对BiTiO₃的多种结构进行了计算. 计算结果表明, C1C1结构最为稳定, 对应晶格参数为a=b=5.606 Å, c=9.954 Å; α=β=105.1°, γ=61.2°. 进一步对C1C1结构的BiTiO₃的能带结构、电子性质和光学性质进行了研究, 发现BiTiO₃是间接带隙半导体, 其费米面附近的能带主要由Ti-3d和O-2p层的电子态构成. 通过介电函数、复折射率和反射率等的研究, 发现BiTiO₃的光学性质为近各向同性.     

UO2的电子结构及光学性质的第一性原理研究

采用局域自旋密度近似 (LSDA)和有效库仑相关能 (U) 方法研究了UO₂的晶格参数、能带结构和光学常数. 计算得到的UO₂晶体的晶格常数为5.40 ?,带隙宽度为1.82 eV,正确预测了UO₂的反铁磁性半导体基态性质. 能带结构和介电函数的分析结果表明,铀的6d电子在晶体场中发生劈裂形成两个能级,与实验结果较为符合.     

Ba0.5Sr0.5TiO3电子结构和光学性质的第一性原理研究

利用第一性原理研究了Ba_0.5Sr_0.5TiO₃的能带结构和光学性质.结果表明,导带和价带都来源于钛原子3d轨道和氧原子2p轨道的杂化.导带主要由钛原子的3d轨道贡献,价带主要由氧原子的2p轨道贡献.吸收系数为10⁵ cm^-1量级,且吸收主要集中在低能区.折射率为n（0）=2.1,结果与实验符合. 关键词： 第一性原理 能带结构 光学性质     

氮铁共掺锐钛矿相TiO2电子结构和光学性质的第一性原理研究

本文采用基于密度泛函理论的平面波超软赝势方法研究了N,Fe共掺杂TiO₂的晶体结构、电子结构和光学性质.研究表明,N,Fe共掺杂TiO₂的晶格体积、原子间的键长及原子的电荷量发生变化,导致晶体中产生八面体偶极矩,并因此光生电子-空穴对有效分离,提高TiO₂的光催化活性;N,Fe共掺杂同时在导带底和价带顶形成了杂质能级,使TiO₂的禁带宽度变窄,光吸收带边红移到可见光区,这些杂质能级可以降低光生载流子的复合概率,提高Ti     

高压下BaHfO3电子结构与光学性质的第一性原理研究

从第一性原理出发,在局域密度近似下,采用基于密度泛函理论的平面波超软赝势计算方法系统地研究了高压对BaHfO₃电子结构与光学性质的影响.能带结构分析表明;无压强和施加正压强作用时,BaHfO₃为直接带隙绝缘体,而施加负压强时,BaHfO₃则转变为间接带隙半导体;BaHfO₃的带隙随压强增加而减小,且具有明显的非线性关系.对光学性质的分析发现:施加正压强后,光学吸收带边产生蓝移;负压强作用时介电函数虚部尖峰减少,光学吸收带边产生红移;施加压强后BaHfO₃的静态介电常数和静态折射率均增大.上述研究表明施加高压有效调制了BaHfO₃的电子结构和光学性质,计算结果为BaHfO₃光电材料的设计与应用提供了理论依据.     

Cu2Se电子结构和光学性质的第一性原理计算

采用基于密度泛函理论(DFT)的第一性原理的平面超赝势方法计算研究了Cu2Se的电子结构、态密度和光 学性质。能带结构分析表明Cu2Se为半金属、上价带主要由Se的4p电子构成下价带主要由Cu的3d电子构成静态介电常数为1.41折射率为7.74吸收系数在可见光范围内最小值为1×105cm−1且在高能区对光子的吸收减小为零其电子能量损失峰在26.84eV正好对应反射系数急剧下降的位置光电导率的波谷出现的能量范围与前面的吸收系数和消光系数的峰值和波谷出现的位置完全对应。     

Native defects and Pr impurities in orthorhombic CaTiO3 by first-principles calculations

Formation energies of native defects and Pr impurities in orthorhombic CaTiO₃ are explored using the first-principles calculations. The Ca vacancy (V_Ca), Ti vacancy (V_Ti) and Ca antisite (Ca_Ti) are found to be energetically preferable. The Ti antisite (Ti_Ca) and O vacancy (V_O) are not energetically favorable in the wide range of Fermi level. In Pr-doped CaTiO₃, Pr substituting for Ca (Pr_Ca) is likely to form under condition A in which CaTiO₃ is in equilibrium with CaO and O₂. Under condition B (TiO₂, CaTiO₃ and O₂ are in equilibrium), Pr_Ti defect is energetically preferable depending on the Fermi levels. Several native defects and the two sites of Pr impurities in CaTiO₃ are coincided with several different defects in Pr-doped CaTiO₃ reported in the literature. Based on the present calculations, we can elucidate that the Ca deficiency design of the traditional formula Ca_1−xV_Ca(x/2)Pr_xTiO₃ is not the best for efficient red photoluminescence, which is realized via the experimental measurements.     

Effects of Zn impurities on the electronic properties of Pr doped CaTiO3

Microcosmic investigations of weak red-emitting materials are crucial for their further development and application. In this work, we have focused on the band structures and electronic properties of Pr mono- and (Zn, Pr) co-doped CaTiO₃ using density functional theory. Zn substitution for Ca or Ti tends to form clusters energetically with Pr substituting for Ca in CaTiO₃. In Pr mono-doped CaTiO₃, the O_2p→Ti_3d transition in CaTiO₃ host corresponds to the centered 330 nm excitation spectra. The gap states above the valence band of ∼1.30 eV and ∼2.06 eV are hybridized by Pr_4f, O_2p and Ti_3d orbitals. They are mainly due to Pr_4f orbitals in CaTiO₃:Pr. The former gap level is related to red emission at 614 nm due to ¹D₂→³H₄ transition of Pr³⁺ activator. The latter is related to the excitation spectra centered at 380 nm due to the low-lying Pr-to-mental intervalence charge transfer transitions (Pr³⁺-O²⁻-Ti⁴⁺?Pr⁴⁺-O²⁻-Ti³⁺). The band structures of (Zn, Pr) co-doped CaTiO₃ keep the similar gap levels to those in Pr mono-doped CaTiO₃. The incorporation of Zn brings out the two stronger localized gap states, which are hybridized by Pr_4f, O_2p and Ti_3d orbitals, in comparison with those in Pr mono-doped CaTiO₃. Therefore, when Zn impurities are added into Pr doped CaTiO₃, the present calculations visualize the two enhanced levels and the distorted structures around Pr.     

Electronic structure and optical properties of rutile RuO2 from first principles

The systematic trends of electrionic structure and optical properties of rutile (P42 /mnm) RuO2 have been calculated by using the plane-wave norm-conserving pseudopotential density functional theory (DFT) method within the generalised gradient approximation (GGA) for the exchange-correlation potential.The obtained equilibrium structure parameters are in excellent agreement with the experimental data.The calculated bulk modulus and elastic constants are also in good agreement with the experimental data and available theoretical calculations.Analysis based on electronic structure and pseudogap reveals that the bonding nature in RuO2 is a combination of covalent,ionic and metallic bonds.Based on a Kramers-Kronig analysis of the reflectivity,we have obtained the spectral dependence of the real and imaginary parts of the complex dielectric constant (ε1 and ε2,respectively) and the refractive index (n);and comparisons have shown that the theoretical results agree well with the experimental data as well.Meanwhile,we have also calculated the absorption coefficient,reflectivity index,electron energy loss function of RuO2 for radiation up to 30 eV.As a result,the predicted reflectivity index is in good agreement with the experimental data at low energies.     

Ba(Mg1/3Nb2/3)O3电子结构第一性原理计算及光学性能研究

Ba(Mg_1/3Nb_2/3)O₃ (BMN)复合钙钛矿陶瓷具有高介电常数和高品质因子等介电性能, 预示了其在光学领域的应用前景. 本文采用第一性原理方法计算了BMN的电子结构, 对其本征光学性能进行分析和预测. 对固相合成六方相BMN的XRD 测试结果进行Rietveld精修(加权方差因子R_wp=6.73%, 方差因子R_p=5.05%), 在此基础上建立晶体结构模型并对其进行几何优化. 运用基于密度泛函理论(DFT)的平面波赝势方法, 对六方相BMN晶体模型的能带、态密度和光学性质进行理论计算. 结果表明BMN的能带结构为间接带隙, 禁带宽度E_g=2.728 eV. Mg-O和Ba-O以离子键结合为主, Nb-O以共价键结合为主, 费米面附近的能带主要由O-2p和Nb-4d 态电子占据, 形成了d-p轨道杂化. 修正带隙后, 计算了BMN沿[100]和[001]方向上的复介电函数、吸收系数和反射率等光学性质. 结果表明, BMN近乎光学各向同性, 在可见光区, 其本征透过率为77%< T <83%, 折射率为1.91< n <2.14, 并伴随一定的色散现象. 实验测试结果与理论计算结果相吻合.     

Glassy-ferromagnetic behavior in Eu0.5Sr0.5CoO3

Polycrystalline perovskite cobalt oxide Eu_0.5Sr_0.5CoO₃ was prepared by the conventional solid-state reaction method. X-ray powder patterns indicated the prepared samples are pure, cubic perovskite structure (Pm3?m), and with no evidence of any secondary phases. The dc magnetization and ac susceptibility measurements were carried out to investigate the magnetic properties of the sample, and which indicated that cluster-glasses properties are suppressed with the increasing of the coercive field. We denied the possibility of spin-glasses and the existence of the Hopkinson effect in Eu_0.5Sr_0.5CoO₃ through the temperature-dependent ac susceptibility measurements, and explained the magnetic behavior of Eu_0.5Sr_0.5CoO₃ with the competition between magnetic anisotropy and the external magnetic field.     

Effect of different annealing methods on ferroelectric properties of 0.95Pb(Sc0.5Ta0.5)O3-0.05PbTiO3 thin films

0.95Pb(Sc_0.5Ta_0.5)O₃-0.05PbTiO₃ thin films were prepared on LaNiO₃/SiO₂/Si substrate by radio frequency magnetron sputtering, and the films were annealed subsequently with repeated many times by two approaches: normal one-step rapid thermal annealing and innovative two-steps rapid thermal annealing. X-ray diffraction demonstrates that all the films were preferred (1 0 0) oriented and an appropriate repeat of annealing process can enhance perovskite phase of the films. Scanning electron microscopy suggests that the films treated by two-steps rapid thermal annealing show crack-free, uniform size grains and dense microstructure. Measurement of remnant polarization and leakage current dependence of electric field confirms that the films treated by two-steps rapid thermal annealing exhibit better ferroelectric properties than the films treated by one-steps rapid thermal annealing. The results reveal that microstructure plays an important role in enhanced ferroelectric properties of the 0.95Pb(Sc_0.5Ta_0.5)O₃-0.05PbTiO₃ thin films.     

Effects of A-site non-stoichiometry on the structural and electrical properties of 0.96K0.5Na0.5NbO3- 0.04LiSbO3 lead-free piezoelectric ceramics

Effects of A-site non-stoichiometry on the structural and electrical properties of 0.96K0.5+xNa0.5+xNbO3- 0.04LiSbO3 lead-free piezoelectric ceramics were examined for 0 ≤ x ≤ 0.02. The piezoelectric coefficients exhibited a maximum, d33 = 187 pC/N at x = 0.0075, coinciding with the maximum of the grain size and the apparent density at x = 0.0075. The apparent density and the piezoelectric coefficients decreased with increasing x at higher x which was likely due to the crystal geometrical distortion of 0.96K0.5+xNa0.5+xNbO3-0.04LiSbO3. In addition, super-large grains were found and this may be due to liquid phase sintering. Excess (K++Na+) attracted a sum of space charges to keep the charge neutral, resulting in charge leakage during the course of ceramic polarization, influencing the piezoelectric and ferroelectric properties. These findings are of importance for guiding the design of K0.5Na0.5NbO3-based lead-free ceramics with enhanced electrical properties.     

γ-Si3N4在高压下的电子结构和物理性质研究

采用基于密度泛函平面波赝势方法(PWP)和广义梯度近似(GGA-PW91)，计算了不同压强下γ-Si₃N₄的电子结构、光学性质和力学性质.基于计算结果，分析讨论了γ-Si₃N₄各物理参数随外压力的变化规律.计算表明，γ-Si₃N₄是一种适合于在高压条件下工作的材料.     

Improved photoluminescence and afterglow in CaTiO3:Pr with addition of nanosized SiO2

Enhancement of the ¹D₂-³H₄ red emission in CaTiO₃:Pr³⁺ with addition of nanosized SiO₂ fabricated by a solid state reaction method is reported. The dynamical processes for the improvement of red emission were systematically investigated using photoluminescence (PL) and PL excitation spectra, and diffused reflectance spectra as well as time decay patterns of PL and persistent afterglow. Higher efficiency of energy transfer from CaTiO₃ host to the activator Pr³⁺ due to the improvement of crystallinity by SiO₂ addition was discussed in comparison with that of the SiO₂ free sample. The enhancement of persistent afterglow after the cessation of excitation in SiO₂ added CaTiO₃:Pr³⁺ was also analyzed by theoretically fitted results.