Metal clad Pb1-xSnx Se/Pb1-x-yEuy SnxSe distributed feedback lasers

Distributed-feedback Pb_1-xSn_xSe double heterostructure stripe geometry diode lasers fabricated using molecular-beam epitaxy are discussed. These lasers operate in the CW mode up to 90 K and in the pulse mode up to 100 K. They are unique in their low tuning rate with injection current 4 cm^-1/A, and in that they withstand high CW injection currents without damage. These features are probably the result of the metal cladding layer located on top of the gratings     

Analysis of surface-emitting λ/4-shifted DFB lasers with adistributed Bragg reflector

Threshold current density and differential quantum efficiency are analyzed for a surface emitting (SE) λ/4-shifted distributed feedback (DFB) laser consisting of alternating active and passive layers with a distributed Bragg reflector (DBR). It is shown that the threshold current density can be reduced by using the DFB action induced by alternating active and passive layers in the active region of the SE DFB laser structure, as compared to SE DBR lasers with a homogeneous active region. It is also shown that the differential quantum efficiency of the DFB laser with a DBR can be higher than that of conventional DBR lasers without increasing the threshold current density     

Pb_(1-x)Sn_xTe和Pb_(1-y)Sn_ySe激光晶体

本文报道了具有合适的载流子浓度,低位错密度和适当p-n结深度的Pb_(1_x)Sn_xTe 和Pb_(1_υ)Sn_υSe激光晶体。这种晶体是用水平无籽晶气相生长技术和适当控制生长条件直接得到的,用这两种晶体已经制成OW运转的可调谐二极管激光器。     

Analysis of below-threshold spectrum and linewidth of surface-emitting lambda /4-shifted DFB lasers with DBR mirror

The frequency distribution of spontaneous emission noise below lasing threshold and the spectral linewidth in lasing operation are analysed for surface-emitting lambda /4-shifted distributed feedback (DFB) lasers consisting of alternating active and passive layers with a distributed Bragg reflector (DBR) mirror.<>     

Analysis of Hg1-xCdxSe alloys inelectroreflectance

An electrolyte electroreflectance study on Hg_1-xCd_xSe alloy films is first reported. The critical point energies E₀ and E₁ are obtained for different CdSe composition samples and material homogeneities are also discussed     

Design for high-power single-mode operation from 2-D surface-emitting ROW-DFB lasers

Stable single-mode single-lobe operation to high powers is predicted for two-dimensional surface-emitting lasers, if second-order distributed feedback/distributed Bragg reflector (DFB/DBR) gratings are preferentially placed in the elements of a resonant-optical-waveguide array. Beside their usual functions (i.e., feedback and outcoupling), the gratings act as an effective array-mode selector due to different interaction with the gratings of different array modes. The in-phase array mode is strongly favored to lase around its (lateral) resonance due to better field overlap with DFB region and lower interelement absorption loss than for nonresonant array modes. For 20-element arrays with 700/600 /spl mu/m DFB/DBR gratings, emitting at /spl lambda/=0.98 /spl mu/m, high (/spl sim/100 A/cm/sup 2/) intermodal discrimination /spl Delta/J/sub th/ is obtained. /spl Delta/J/sub th/ is enhanced to /spl sim/225 A/cm/sup 2/ by introducing free-carrier absorption in the array-interelement regions.     

DBR module with 20-mW constant coupled output power, over 16 nm(40×50-GHz spaced channels)

To replace DFB lasers in wavelength-division-multiplexing (WDM) systems, tunable lasers should provide the same output power (20 mW) and remain simple devices. We propose a two-section DBR laser with optimized design. The required settings to reach all the achievable ITU wavelengths with constant output power are simply derived from very few initial characterizations. We obtain a record 20-mW coupled output power, constant over 16 nm (=40 channels 50-GHz spaced). For the first time, power performances comparable with DFB lasers are obtained; DBR lasers are now competitive candidates for an integration in WDM systems     

4-Gb/s heterodyne transmission experiments using ASK, FSK and DPSKmodulation

An experimental heterodyne lightwave transmission system operating at 4 Gb/s is described. The optical sources were 1.5-μm-wavelength DFB (distributed feedback) and DBR (distributed Bragg reflector) semiconductor lasers. ASK, FSK, and DPSK modulation formats were investigated; baseline receiver sensitivities of 175, 191, and 209 photons/bit, respectively, were achieved. Transmission experiments through up to 160 km of conventional single-mode fiber and up to 175 km of dispersion-shifted fiber are also reported     

GaAs-AlxGa1-xAs integrated twin-guide lasers with distributed Bragg reflectors

A GaAs-AlxGa1-xAs integrated twin-guide (ITG) laser with distributed Bragg reflectors (DBR) was fabricated. The DBR was in the form of a third-order grating which was chemically etched on the surface of the output waveguide. The ITG lasers with distributed Bragg reflectors (DBR-ITG lasers) operating at room temperature showed single mode oscillation up to 1.5 times the threshold current and the half-side external quantum efficiency was 1 ∼ 2 percent.     

Spontaneous emission model of surface-emitting DFB semiconductorlasers

A general spontaneous emission model is developed for surface-emitting (SE) distributed feedback (DFB) semiconductor lasers. The frequency distribution of spontaneous emission noise below lasing threshold and the spontaneous emission rate in lasing operation are formulated by using a transfer matrix method combined with the Green's function method. The effective linewidth enhancement factor is obtained from this model in terms of the elements of the transfer matrix. By way of example, the author applies the formulation to a standard SE DFB laser, and a SE λ/4-shifted DFB laser with a distributed Bragg reflector (DBR) mirror. In particular, the author analyzes the below-threshold spectrum, the threshold current density, the differential quantum efficiency, and the spectral linewidth of these lasers     

Infrared sensor arrays with 3-12 μm cutoff wavelengths inheteroepitaxial narrow-gap semiconductors on silicon substrates

The authors describe heteroepitaxy of IV-VI lead chalcogenide narrow-gap semiconductor (NGS) as well as II-VI materials (CdTe) on Si substrates. Epitaxy is achieved by using stacked intermediate CaF₂ -BaF₂ bilayers to overcome the large lattice and thermal expansion mismatch. The authors use lead chalcogenides (PbS, PbTe, Pb_1-xEu_xSe, and Pb_1-xSn_x Se) rather than Hg_1-xCd_xTe (MCT) as IR-sensitive NGS material because growth and fabrication techniques are much easier and compositional homogeneity much less critical with lead salts, while maximum sensitivities are comparable to those of MCT. The high permittivity of lead salts yields much more fault-tolerant devices due to the effective shielding of charges resulting from defects. The authors have fabricated linear sensor arrays on Si substrates with cutoff wavelengths ranging from 3 to above 12 μm. The sensitivities of the best PbTe on Si sensors (cutoff 5.5 μm) are already comparable to those of MCT with the same cutoff wavelengths, while those of the first Pb_1-xSn_xSe devices are a factor of 2-5 below. Although many fabrication steps are rather crude and far from being optimized, this considerable improvement is easily possible     

Analysis and design of combined distributed-feedback/Fabry-Perotstructures for surface-emitting semiconductor lasers

We propose combined distributed-feedback/Fabry-Perot (DFB/FP) structures for surface-emitting semiconductor lasers. The analysis is based on coupled-wave equations modified for surface-emitting lasers. The proposed structures, which exhibit enhanced resonance due to a matching between the gain and field distributions resulting in a reduced threshold compared with simple FP structures, are formed by placing the DFB structure between two DBR mirrors of an FP resonant cavity and introducing phase layers between the DFB region and the mirrors. It was found that the periodic-gain structures are a special case of the combined DFB/FP structures in which the index coupling effect is assumed to be negligible due to a small fill factor or a small refractive-index difference. The effect of complex (gain and index) coupling on the design and the threshold characteristics of the structures is clearly illustrated. Some important design considerations that were neglected in the previous papers are addressed     

Distributed Bragg-reflector Pb1-xSnxTe/PbSeyTe1-ydiode lasers

Distributed Bragg-reflector (DBR) diode lasers were designed and fabricated from lattice-matched Pb1-xSnxTe/PbSeyTe1-ysingle heterostructures grown by liquid-phase epitaxy. These DBR lasers operated in a single longitudinal mode within a limited range of heat-sink temperatures, 8.5-38 K, with a threshold current density of ∼3 kA/cm²at 20 K. Single longitudinal mode operation was maintained up to more than three times the threshold current. Continuous tuning of the laser output frequency over a range of ∼6 cm^-1, near 775 cm^-1(12.9 μm), was acheived by varying the heat-sink temperature. The average tuning rate was 0.21 cm^-1/K, and it was much smaller than the rate for corresponding Fabry-Perot lasers, which was 2.3 cm^-1/K. The measured effective mode index of the DBR lasers agrees well with the calculated one.     

Improved coupled mode analysis of corrugated waveguides and lasers--II: TM mode

In the previous paper [1] we proposed an accurate formalism for analyzing corrugated waveguide devices. This formalism, developed for the TE modes, is extended here to TM modes. Characteristics of TM modes in distributed feedback (DFB) lasers, DBR reflectors, and grating beam couplers are investigated with emphasis on the effect of the radiation loss and they are compared with the TE case.     

Measurement of spectral linewidth of AlGaAs/GaAs distributed feedback lasers

The spectral linewidth of AlGaAs/GaAs distributed feedback (DFB) lasers was measured for the first time. The linewidth-power product decreased with temperature, which indicates that the relative position of the oscillation wavelength and the gain peak strongly affects the linewidth of DFB lasers.     

窄线宽半导体激光器件

分布反馈半导体激光器的线宽一般较大，难以满足光纤传感等领域的要求。根据C.H. Henry于1982年提出的半导体激光器的线宽理论，通过适当设计DFB半导体激光器的腔长、耦合系数、微分增益、光限制因子，能有效地减小激光器的线宽。同时，空间烧孔现象也可限制DFB半导体激光器的线宽，为此需要合理设计光栅结构。在此基础上，DFB激光器的线宽能达到几十千赫兹的量级。此外，采用DBR结构或者外腔结构，也可以获得相当窄的线宽。     

A Michelson interferometer with balanced detection for thecharacterization of modulation and noise properties of semiconductorlasers

A Michelson interferometer with balanced detection, built to study semiconductor lasers, is analyzed. The quantum noise due to vacuum fluctuations, coupling losses, detector quantum efficiency, and spatial mode mismatches are included in the analysis. The limits for frequency noise detection and the sensitivity of the interferometer are examined. It is observed that under ordinary measurement conditions the frequency noise can only be measured up to slightly above the cavity bandwidth of the laser. Comprehensive measurement procedures are proposed, and experimental results showing the frequency modulation response, measured from 10 kHz to 8 GHz, of a three-section distributed feedback (DFB) laser and the frequency noise spectra, measured from 30 MHz to 8 GHz, of a two-section distributed Bragg reflector (DBR) laser are presented. These results reveal new cavity detuning effects in the noise characteristics of tunable DBR lasers     

中红外可调谐量子级联激光器研究进展

量子级联激光器(QCL)是中红外波段重要的激光光源,其中,可调谐中红外量子级联激光器具有单纵模、频率可调谐的优点,成为目前研究的热点。可调谐中红外量子级联激光器主要通过分布反馈(DFB)光栅、分布布拉格反射(DBR)光栅、外腔衍射光栅等方法实现。本文介绍了中红外量子级联激光器的基本原理,分别归纳、总结了近年来DFB、DBR可调谐量子级联激光器以及外腔可调谐量子级联激光器的研究进展,讨论了各种可调谐方法的优缺点。最后,对可调谐量子级联激光器的发展趋势进行了展望。     

FSK heterodyne transmission experiments at 560 Mbit/s and 1 Gbit/s

Optical frequency-shift-keying (FSK) signals are obtained from directly modulated distributed feedback (DFB) semiconductor lasers. Experimental studies of the direct frequency modulation (FM) characteristics of the DFB lasers show a nonuniform FM response due to the competing effects of thermal modulation of the laser active region and carrier density modulation. Equalization of the signal current to the laser is employed to produce a flat FM response from 30 kHz to 1 GHz. Optical FSK transmission and heterodyne detection experiments at 560-Mbit/s and 1-Gbit/s are conducted at a wavelength of 1497 nm. Receiver sensitivities of -39 dBm at 560 Mbit/s and -37 dBm at 1 Gbit/s are obtained. Transmission through 100 km of single-mode fiber at 1 Gbit/s is achieved with no degradation in receiver sensitivity.     

10Gbit/s高T0无制冷分布反馈激光器

与折射率耦合分布的分布反馈（DFB）激光器相比,不管界面反射率是多少,增益耦合DFB激光器都能稳定地单纵模工作,而且具有高速、低啁啾的特性．本课题组用AlGaInAs/InP材料,采用增益耦合DFB结构,进行了单纵模激光器研发,并对器件特性进行了测试分析．