固体氩的晶格热导率的非简谐晶格动力学计算

用一种非简谐晶格动力学方法, 使用相互作用势作为惟一的输入参数, 准确地计算了固体氩的各个声子的频率和弛豫时间. 并将这些结果进一步和玻尔兹曼输运方程相结合, 预测了固体氩从10 K 到80 K 区间的热导率, 并得到了与实验值非常符合的结果. 分析了运用非简谐晶格动力学方法进行数值计算过程中的各个相关的计算参数, 包括布里渊区中倒格子矢量的选取, δ 函数的展宽的选择等对热导率和声子弛豫时间预测结果的影响. 通过对各个声子模式对热导率贡献的分析, 发现随着温度升高, 高频声子对于热导率的贡献率也逐渐变大, 结果和理论预测完全一致. 关键词： 热导率 固体氩 非简谐晶格动力学 声子     

Effect of phonon focussing on thermal conductivity of silicon

Thermal conductivity of a cubic crystal in the boundary scattering regime is calculated, taking into account the difference between the phonon phase and group velocities. Numerical estimates in the case of silicon indicate appreciable anisotropy in conductivity as a result of phonon focussing, its maximum value being about 90% larger than the minimum. The contributions of the individual polarization branches are found to be more strongly dependent on direction than the total conductivity. It is further observed that the angle between the phonon phase and group velocities can be sometimes as large as 10°, 24° and 18° in the case of the longitudinal and the two transverse acoustic branches, respectively.     

多约束纳米结构的声子热导率模型研究

纳米技术的快速发展使得对微纳尺度导热机理的深入研究变得至关重要. 理论和实验都表明, 在纳米尺度下声子热导率将表现出尺寸效应. 基于声子玻尔兹曼方程和修正声子平均自由程的方法得到了多约束纳米结构的声子热导率模型, 可以描述多个几何约束共同作用下热导率的尺寸效应. 不同几何约束对声子输运的限制作用可以分开计算, 总体影响则通过马西森定则进行耦合. 对于热流方向的约束, 采用扩散近似的方法求解声子玻尔兹曼方程; 对于侧面边界约束, 采用修正平均自由程的方法计算边界散射对热导率的影响. 得到的模型能够预测纳米薄膜(法向和面向)及有限长度方形纳米线的热导率随相应特征尺寸的变化. 与蒙特卡罗模拟及硅纳米结构热导率实验值的对比验证了模型的正确性.     

Decomposition model for phonon thermal conductivity of a monatomic lattice

An analytical treatment of decomposition of the phonon thermal conductivity of a crystal with a monatomic unit cell is developed on the basis of a two-stage decay of the heat current autocorrelation function observed in molecular dynamics simulations. It is demonstrated that the contributions from the acoustic short- and long-range phonon modes to the total phonon thermal conductivity can be presented in the form of simple kinetic formulas, consisting of products of the heat capacity and the average relaxation time of the considered phonon modes as well as the square of the average phonon velocity. On the basis of molecular dynamics calculations of the heat current autocorrelation function, this treatment allows for a self-consistent numerical evaluation of the aforementioned variables. In addition, the presented analysis allows, within the Debye approximation, for the identification of the temperature range where classical molecular dynamics simulations can be employed for the prediction of phonon thermal transport properties. As a case example, Cu is considered.     

Calculations of anharmonic phonon relaxation times

Anharmonic phonon relaxation times in Ge are calculated using (i) an isotropic continuum model, and (ii) a dispersive model. A complete spectrum of calculated results is presented. Frequency-averaged values for normal- and umklapp-three-phonon relaxation times are also calculated. A comparison is made between our findings and some earlier works, and disagreements are discussed. The results are applied in calculating some results in the theory of lattice thermal conductivity. From February 1976: Department of Theoretical Physics, The University, Newcastle-Upon-Tyne, NE1 7RU U.K.     

Tuning the thermal conductivity of strontium titanate through annealing treatments

Strontium titanate(SrTiO_3) is a promising n-type material for thermoelectric applications. However, its relatively high thermal conductivity limits its performance in efficiently converting heat into electrical power through thermoelectric effect.This work shows that the thermal conductivity of SrTiO_3 can be effectively reduced by annealing treatments, through an integrated study of laser flash measurement, scanning electron microscopy, Fourier transform infrared spectroscopy, x-ray absorption fine structure, and first-principles calculations. A phonon scattering model is proposed to explain the reduction of thermal conductivity after annealing. This work suggests a promising means to characterize and optimize the material for thermoelectric applications.     

表面低配位原子对声子的散射机制

由于纳米结构具有极高的表体比,声子-表面散射机制对声子的热输运性质起到关键作用.提出了表面低配位原子对声子的散射机制,并且结合量子微扰理论与键序理论推导出该机制的散射率.由于散射率正比于材料的表体比,这种散射机制对声子输运的重要性随着纳米结构尺寸的减小而增大.散射率正比于声子频率的4次方,所以这种散射机制对高频声子的作用远远强于对低频声子的作用.基于声子玻尔兹曼输运方程,计算了硅纳米薄膜和硅纳米线的热导率,发现本文模型比传统的声子-边界散射模型更接近实验值.此发现不仅有助于理解声子-表面散射的物理机制,也有助于应用声子表面工程调控纳米结构的热输运性质.     

Effect of normal processes on thermal conductivity of germanium,silicon and diamond

The effect of normal scattering processes is considered to redistribute the phonon momentum in (a) the same phonon branch — KK-S model and (b) between different phonon branches — KK-H model. Simplified thermal conductivity relations are used to estimate the thermal conductivity of germanium, silicon and diamond with natural isotopes and highly enriched isotopes. It is observed that the consideration of the normal scattering processes involving different phonon branches gives better results for the temperature dependence of the thermal conductivity of germanium, silicon and diamond with natural and highly enriched isotopes. Also, the estimation of the lattice thermal conductivity of germanium and silicon for these models with the consideration of quadratic form of frequency dependences of phonon wave vector leads to the conclusion that the splitting of longitudinal and transverse phonon modes, as suggested by Holland, is not an essential requirement to explain the entire temperature dependence of lattice thermal conductivity whereas KK-H model gives a better estimation of the thermal conductivity without the splitting of the acoustic phonon modes due to the dispersive nature of the phonon dispersion curves.      

声子频率对同位素掺杂硅声子散射的影响

点缺陷对声子的散射是影响电绝缘体热导率的重要机制之一,其中声子频率是影响声子散射的重要因素．本文主要研究声子频率对同位素掺杂硅声子散射的影响。首先产生一个窄频率范围的声子波包,然后使用分子动力学(MD)模拟声子在同位素掺杂硅中的散射过程,在原子尺度下清晰展示了声子对同位素掺杂的散射过程,并对能量的透射率和反射率进行分析。将模拟结果和已发表的理论结果相比较,在单个同位素掺杂缺陷下,在临近共振频率区域内用改进的R.O.Pohl公式成功的拟合了MD结果,这一结果会对在较宽频率包括非色散和色散声子范围内构造声子热传导公式有帮助.对于在较高的掺杂浓度下,声子频率对声子散射特性的影响还需要更进一步的研究。     

Study of lattice thermal conductivity of alpha-zirconium by molecular dynamics simulation

The non-equilibrium molecular dynamics method is adapted to calculate the phonon thermal conductivity of alphazirconium. By exchanging velocities of atoms in different regions, the stable heat flux and the temperature gradient are established to calculate the thermal conductivity. The phonon thermal conductivities under different conditions, such as different heat exchange frequencies, different temperatures, different crystallographic orientations, and crossing grain boundary (GB), are studied in detail with considering the finite size effect. It turns out that the phonon thermal conductivity decreases with the increase of temperature, and displays anisotropies along different crystallographic orientations. The phonon thermal conductivity in [0001] direction (close-packed plane) is largest, while the values in other two directions of [2īī0] and [01ī0] are relatively close. In the region near GB, there is a sharp temperature drop, and the phonon thermal conductivity is about one-tenth of that of the single crystal at 550 K, suggesting that the GB may act as a thermal barrier in the crystal.     

First-principles investigations on elastic,thermodynamic and lattice thermal conductivity of topological insulator LaAs

Topological insulators are always a hot topic owing to their various peculiar physical effects, which are useful in spintronics and quantum information processing. Herein, we systematically investigate the elastic, thermodynamic and lattice thermal conductivity of a new typical topological insulator LaAs by combining the first-principles approach and an iterative solution of the Boltzmann transport equation. The obtained elastic constants and other lattice structural parameters of LaAs are well consistent with the experimental and other theoretical results. For the first time, the lattice thermal conductivity (5.46 W/(m?K)) and mean free path (14.4 nm) of LaAs are obtained,which manifests that the LaAs is more likely to be a desirable thermoelectric material. It is noted that the obtained mode-averaged Grüneisen parameters by different ab initio simulation packages are very similar, suggesting that our results are rather responsible. From the phonon scattering rates of LaAs, we speculate that the reduction of acoustic-optical gap and the larger phonon scattering may jointly result in reduction of thermal conductivity for LaAs. Meanwhile, the temperature dependence curves of the lattice thermal conductivity, heat capacity and phonon mean free path are also presented. We expect our work can provide more information for further experimental studies.     

带孔硅纳米薄膜热整流及声子散射特性研究

本文基于非平衡的分子动力学模拟方法计算了带有三角形孔的硅纳米薄膜的界面热阻特性,结果表明300-1100 K范围内随着热流方向的改变,在含有三角形孔的硅纳米薄膜中存在热整流效应,热整流系数达28％.同时借助于声子波包动力学模拟方法,获得了不同频率下的纵波声子在三角形孔处的散射特性,结果表明纵波声子在散射过程中产生了横波声子,并且从三角形底部向顶部入射的声子能量透射系数比反向时平均低22％.不对称结构引起的声子透射率的差异是引起热整流效应的主要因素.     

具有本征低晶格热导率的硫化银快离子导体的热电性能

硫化银(Ag_2S)是一种典型的快离子导体材料,前期关于Ag_2S的研究主要集中在光电和生物等领域.最近的研究表明, a-Ag_2S具有和金属一样的良好延展性和变形能力.但是, Ag_2S的热电性能尚无公开报道.本工作合成了单相Ag_2S化合物,系统研究了其在300—600 K范围的物相变化、离子迁移特性和电热输运性质.研究发现, Ag_2S在300—600 K温度区间表现出半导体的电输运性质.由于单斜-体心立方相晶体结构转变, Ag_2S的离子电导率、载流子浓度、迁移率、电导率、泽贝克系数等性质在455 K前后出现急剧变化.在550 K, Ag_2S的功率因子最高可达5μW·cm~(–1)·K~(–2). Ag_2S在300—600 K温度区间均表现出本征的低晶格热导率(低于0.6 W·m~(–1)·K~(–1)). S亚晶格中随机分布的类液态Ag离子是导致b-Ag_2S体心立方相具有低晶格热导率的主要原因.在573 K, Ag_2S的热电优值可达0.55,与Ag_2Se, Ag_2Te, CuAgSe等已报道的Ag基快离子导体热电材料的性能相当.     

Localized self-trapping in two-dimensional molecular lattice with interaction between Wannier-Mott excitons and phonon lattice

We investigate the interactions of lattice phonons with Wannier-Mott exciton, the exciton that has a large radius in two-dimensional molecular lattice, by the method of continuum limit approximation, and obtain that the self-trapping can also appear in two-dimensional molecular lattice with a harmonic and nonlinear potential. The exciton effect on molecular lattice does not distort the molecular lattice but only makes it localized and the localization can also react, again through phonon coupling, to trap the energy and prevents its dispersion.     

Two-dimensional square-Au_2S monolayer: A promising thermoelectric material with ultralow lattice thermal conductivity and high power factor

The search for new two-dimensional(2 D) harvesting materials that directly convert(waste) heat into electricity has received increasing attention. In this work, thermoelectric(TE) properties of monolayer square-Au_2S are accurately predicted using a parameter-free ab initio Boltzmann transport formalism with fully considering the spin–orbit coupling(SOC),electron–phonon interactions(EPIs), and phonon–phonon scattering. It is found that the square-Au_2S monolayer is a promising room-temperature TE material with an n-type(p-type) figure of merit ZT = 2.2(1.5) and an unexpected high n-type ZT = 3.8 can be obtained at 600 K. The excellent TE performance of monolayer square-Au_2S can be attributed to the ultralow lattice thermal conductivity originating from the strong anharmonic phonon scattering and high power factor due to the highly dispersive band edges around the Fermi level. Additionally, our analyses demonstrate that the explicit treatments of EPIs and SOC are highly important in predicting the TE properties of monolayer square-Au_2S. The present findings will stimulate further the experimental fabrication of monolayer square-Au_2S-based TE materials and offer an in-depth insight into the effect of SOC and EPIs on TE transport properties.     

Dispersive effects and correction term in two-mode phonon conduction model for Ge

A complete analysis of the phonon conductivity κ, still lacking in the literature, is presented in the two-mode conduction model for Germanium. First a method is derived from which the correction term κ_c of the Callaway model is separated into its longitudinal and transverse parts and then the effects of strong phonon dispersion and the role of longitudinal and transverse phonons on κ_c are studied. For this purpose we have also proposed some new empirical expressions for the three phonon relaxation rates τ_3ph⁻¹'s which are valid in the entire temperature range. This improvised model, when applied simultaneously to the phonon conductivity data of both normal and enriched Ge, yields some new results. These are (i) κ_c neglected by the earlier workers in the two-mode phonon conduction model, gives a substantial contribution beyond the conductivity maximum and (ii) the longitudinal phonons are the major carriers of heat at high temperature.     

Effect of multipolar interaction on the effective thermal conductivity of nanofluids

Nanofluids or liquids with suspended nanoparticles are likely to be the future heat transfer media, as they exhibit higher thermal conductivity than those of liquids. It has been proposed that nanoparticles are apt to congregate and form clusters, and hence the interaction between nanoparticles becomes important. In this paper, by taking into account the interaction between nearest-neighbour inclusions, we adopt the multiple image method to investigate the effective thermal conductivity of nanofluids. Numerical results show that then the thermal conductivity ratio between the nanoparticles and fluids is large, and the two nanoparticles are close up and even touch, and the point-dipole theory such as Maxwell--Garnett theory becomes rough as many-body interactions are neglected. Our theoretical results on the effective thermal conductivity of CuO/water and Al$_{2}$O$_{3}$/water nanofluids are in good agreement with experimental data.     

One phonon resonant Raman scattering in a quantized spherical film

We have presented a theoretical calculation of the differential cross section (DCS) for the electron Raman scattering (ERS) process associated with surface optical (SO) phonon modes in a semiconductor quantized spherical film. We consider the Fröhlich electron–phonon interaction in the framework of the dielectric continuum approach. We study the selection rules for the processes. Singularities are found to be size-dependent and by varying the size of the QDs, it is possible to control the frequency shift in the Raman spectrum. A discussion of the phonon behavior for the films with large and small size is presented. The numerical results are also compared with that of experiments.